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公开(公告)号:US11442365B1
公开(公告)日:2022-09-13
申请号:US17459836
申请日:2021-08-27
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Yu-Kuang Sun , Ming-Hsun Tsai , Yu-Huan Chen , Wei-Shin Cheng , Cheng-Hao Lai , Hsin-Feng Chen , Chiao-Hua Cheng , Cheng-Hsuan Wu , Yu-Fa Lo , Shang-Chieh Chien , Li-Jui Chen , Heng-Hsin Liu
Abstract: A photolithography system utilizes tin droplets to generate extreme ultraviolet radiation for photolithography. The photolithography system irradiates the droplets with a laser. The droplets become energized and emit extreme ultraviolet radiation. A collector reflects the extreme ultraviolet radiation toward a photolithography target. The photolithography system isolates a source of droplets from oxidants to prevent the oxidation of the nozzle or the formation of metal oxides on the nozzle, both of which can adversely affect an ability of the nozzle to generate a sufficient amount of droplets and/or direct the droplets in a desired direction.
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公开(公告)号:US11275317B1
公开(公告)日:2022-03-15
申请号:US17187272
申请日:2021-02-26
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor: Yu-Huan Chen , Cheng-Hsuan Wu , Ming-Hsun Tsai , Shang-Chieh Chien , Li-Jui Chen
Abstract: A photolithographic apparatus includes a droplet generator, a droplet generator maintenance system, and a controller communicating with the droplet generator maintenance system. The droplet generator maintenance system operatively communicates with the droplet generator, a coolant distribution unit, a gas supply unit, and a supporting member. The gas supply unit includes a heat exchange assembly and an air heating assembly. The coolant distribution unit is configured to control the temperature of the droplet generator within the acceptable droplet generator range.
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公开(公告)号:US09748156B1
公开(公告)日:2017-08-29
申请号:US15180264
申请日:2016-06-13
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor: Shu-Shen Yeh , Cheng-Lin Huang , Chin-Hua Wang , Kuang-Chun Lee , Wen-Yi Lin , Ming-Chih Yew , Yu-Huan Chen , Po-Yao Lin , Shyue-Ter Leu , Shin-Puu Jeng
CPC classification number: H01L23/18 , H01L23/16 , H01L23/3128 , H01L25/105 , H01L25/50 , H01L2224/16225 , H01L2224/48091 , H01L2225/1058 , H01L2225/1076 , H01L2924/00014
Abstract: A semiconductor package includes a cover, a substrate, at least one semiconductor device and at least one corner stiffener. The cover has at least one corner portion. The substrate is in force communication with the cover. The substrate has at least one corner portion. The semiconductor device is present between the cover and the substrate. The corner stiffener is present on at least one of the corner portion of the cover and the corner portion of the substrate.
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公开(公告)号:US12167526B2
公开(公告)日:2024-12-10
申请号:US18064858
申请日:2022-12-12
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Yu-Kuang Sun , Cheng-Hao Lai , Yu-Huan Chen , Wei-Shin Cheng , Ming-Hsun Tsai , Hsin-Feng Chen , Chiao-Hua Cheng , Cheng-Hsuan Wu , Yu-Fa Lo , Shang-Chieh Chien , Li-Jui Chen , Heng-Hsin Liu
Abstract: An extreme ultraviolet (EUV) photolithography system generates EUV light by irradiating droplets with a laser. The system includes a droplet generator with a nozzle and a piezoelectric structure coupled to the nozzle. The generator outputs groups of droplets. A control system applies a voltage waveform to the piezoelectric structure while the nozzle outputs the group of droplets. The waveform causes the droplets of the group to have a spread of velocities that results in the droplets coalescing into a single droplet prior to being irradiated by the laser.
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公开(公告)号:US20250079327A1
公开(公告)日:2025-03-06
申请号:US18240065
申请日:2023-08-30
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Yu-Huan Chen , Kai-Yi Tang , Kuo-Ching Hsu
IPC: H01L23/538 , H01L21/56 , H01L25/065
Abstract: Semiconductor package and method of manufacturing are presented herein. In an embodiment, a device is provided that includes a first semiconductor component embedded in a first core substrate, a first redistribution layer on a first side of the first core substrate, a second redistribution layer on a second side of the first core substrate opposite the first side, a first resin film over the second redistribution layer, a second semiconductor component embedded in a second core substrate, a third redistribution layer on a third side of the second core substrate, wherein the third redistribution layer is bonded to the second redistribution layer by the first resin film, a fourth redistribution layer on a fourth side of the second core substrate opposite the third side, and a through hole via extending through the first redistribution layer, the first core substrate, the second redistribution layer, the third redistribution layer, the second core substrate, and the fourth redistribution layer.
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公开(公告)号:US11528797B2
公开(公告)日:2022-12-13
申请号:US17233220
申请日:2021-04-16
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Yu-Kuang Sun , Cheng-Hao Lai , Yu-Huan Chen , Wei-Shin Cheng , Ming-Hsun Tsai , Hsin-Feng Chen , Chiao-Hua Cheng , Cheng-Hsuan Wu , Yu-Fa Lo , Shang-Chieh Chien , Li-Jui Chen , Heng-Hsin Liu
Abstract: An extreme ultraviolet (EUV) photolithography system generates EUV light by irradiating droplets with a laser. The system includes a droplet generator with a nozzle and a piezoelectric structure coupled to the nozzle. The generator outputs groups of droplets. A control system applies a voltage waveform to the piezoelectric structure while the nozzle outputs the group of droplets. The waveform causes the droplets of the group to have a spread of velocities that results in the droplets coalescing into a single droplet prior to being irradiated by the laser.
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公开(公告)号:US11335634B2
公开(公告)日:2022-05-17
申请号:US16893467
申请日:2020-06-05
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Yu-Huan Chen , Kuo-Ching Hsu , Chen-Shien Chen
IPC: H01L23/48 , H01L23/498 , H01L23/00 , H01L21/48
Abstract: A method for forming a chip package structure is provided. The method includes providing a wiring substrate. The method includes sequentially forming a nickel-containing layer and a gold-containing layer over the first pad. The method includes forming a conductive protection layer covering the gold-containing layer over the nickel-containing layer. The method includes bonding a chip to the wiring substrate through a conductive bump and a flux layer surrounding the conductive bump. The conductive bump is between the second pad and the chip. The method includes removing the flux layer while the conductive protection layer covers the nickel-containing layer.
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公开(公告)号:US11302537B2
公开(公告)日:2022-04-12
申请号:US16837381
申请日:2020-04-01
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Kuo-Ching Hsu , Yu-Huan Chen , Chen-Shien Chen
Abstract: A method for forming a chip package structure is provided. The method includes providing a wiring substrate including a substrate, a pad, and a polymer layer. The polymer layer is over the substrate and the pad, and the polymer layer has a first opening exposing the pad. The method includes forming a conductive adhesive layer over the polymer layer and the pad. The conductive adhesive layer is in direct contact with and conformally covers the polymer layer and the pad. The method includes forming a nickel layer over the conductive adhesive layer. The nickel layer is thicker than the conductive adhesive layer, and the nickel layer and the conductive adhesive layer are made of different materials. The method includes bonding a chip to the wiring substrate through a conductive bump. The conductive bump is between the nickel layer and the chip.
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