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    Semiconductor test structures
    2.
    发明授权
    Semiconductor test structures 有权
    半导体测试结构

    公开(公告)号：US09250286B2

    公开(公告)日：2016-02-02

    申请号：US14246529

    申请日：2014-04-07

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

    Inventor： An-Chun Tu ,  Chen-Ming Huang ,  Chih-Jen Wu ,  Chin-Hsiang Lin

    IPC: H01L31/00 ,  G01R31/26 ,  H01L21/66 ,  G01R31/28

    CPC classification number: G01R31/2644 ,  G01R31/2884 ,  H01L22/14 ,  H01L22/32 ,  H01L22/34 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A method performed using a resistive device, where the resistive device includes a substrate with an active region separated from a gate electrode by a dielectric and electrical contacts along a longest dimension of the gate electrode, the method comprising, performing one or more processes to form the resistive device, measuring a resistance between the electrical contacts, and correlating the measured resistance with a variation in one or more of the processes.

    Abstract translation: 一种使用电阻器件执行的方法，其中所述电阻器件包括具有通过栅电极的最长尺寸的电介质和电触点与栅电极分离的有源区的衬底，所述方法包括执行一个或多个工艺以形成 电阻器件，测量电触点之间的电阻，并将所测量的电阻与一个或多个过程中的变化相关联。

    NITROGEN-CONTAINING OXIDE FILM AND METHOD OF FORMING THE SAME
    3.
    发明申请
    NITROGEN-CONTAINING OXIDE FILM AND METHOD OF FORMING THE SAME 有权
    含氮氧化物膜及其形成方法

    公开(公告)号：US20140246758A1

    公开(公告)日：2014-09-04

    申请号：US13782382

    申请日：2013-03-01

    Applicant: Taiwan Semiconductor Manufacturing Company Ltd.

    Inventor： An-Chun Tu ,  Chih-Hong Hwang ,  Yi Hsien Lu ,  Chun-Heng Chen ,  Chen-Chien Li ,  Chih-Jen Wu ,  Kuei-Shu Chang-Liao ,  Chen-Ming Huang

    IPC: H01L21/02

    CPC classification number: H01L21/02178 ,  H01L21/02181 ,  H01L21/02247 ,  H01L21/02249 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/28202 ,  H01L29/518

    Abstract: A method of forming a nitrogen-containing oxide film is disclosed. The method comprises (a) exposing a substrate to a first gas pulse having one of an oxygen-containing gas and a metal-containing gas; (b) exposing the substrate to a second gas pulse having the other of the oxygen-containing gas and the metal-containing gas to form an oxide film over the substrate; and (c) exposing the oxide film to a third gas pulse having a nitrogen-containing plasma to form a nitrogen-containing oxide film, wherein the nitrogen-containing oxide film has a nitrogen concentration between about 0.1 and about 3 atomic percent (at %).

    Abstract translation: 公开了一种形成含氮氧化物膜的方法。 该方法包括（a）将衬底暴露于具有含氧气体和含金属气体中的一种的第一气体脉冲; （b）将衬底暴露于具有另一个含氧气体和含金属气体的第二气体脉冲，以在衬底上形成氧化膜; 和（c）将氧化膜暴露于具有含氮等离子体的第三气体脉冲以形成含氮氧化物膜，其中所述含氮氧化物膜的氮浓度为约0.1至约3原子百分比（原子％ ）。

    Backside illuminated image sensors and method of making the same
    5.
    发明授权
    Backside illuminated image sensors and method of making the same 有权
    背面照明图像传感器及其制作方法

    公开(公告)号：US08946847B2

    公开(公告)日：2015-02-03

    申请号：US14172053

    申请日：2014-02-04

    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

    Inventor： Kuan-Chieh Huang ,  Chih-Jen Wu ,  Chen-Ming Huang ,  Dun-Nian Yaung ,  An-Chun Tu

    IPC: H01L27/146

    CPC classification number: H01L21/76237 ,  H01L21/76224 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14689 ,  H01L31/18

    Abstract: A backside illuminated image sensor includes a substrate with a substrate depth, where the substrate includes a pixel region and a peripheral region. The substrate further includes a front surface and a back surface. The backside illuminated image sensor includes a first isolation structure formed in the pixel region of the substrate, where a bottom of the first isolation structure is exposed at the back surface of the substrate. The backside illuminated image sensor includes a second isolation structure formed in the peripheral region of the substrate, where the second isolation structure has a depth less than a depth of the first isolation structure. The backside illuminated image sensor includes an implant region adjacent to at least a portion of sidewalls of each isolation structure in the pixel region.

    Abstract translation: 背面照明图像传感器包括具有衬底深度的衬底，其中衬底包括像素区域和外围区域。 基板还包括前表面和后表面。 背面照明图像传感器包括形成在基板的像素区域中的第一隔离结构，其中第一隔离结构的底部在基板的背面露出。 背面照明图像传感器包括形成在基板的周边区域中的第二隔离结构，其中第二隔离结构的深度小于第一隔离结构的深度。 背面照明图像传感器包括与像素区域中的每个隔离结构的侧壁的至少一部分相邻的注入区域。

    Method of making backside illuminated image sensors
    8.
    发明授权
    Method of making backside illuminated image sensors 有权
    制造背面照明图像传感器的方法

    公开(公告)号：US09257326B2

    公开(公告)日：2016-02-09

    申请号：US14587687

    申请日：2014-12-31

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

    Inventor： Kuan-Chieh Huang ,  Chih-Jen Wu ,  Chen-Ming Huang ,  Dun-Nian Yaung ,  An-Chun Tu

    IPC: H01L21/762 ,  H01L27/146 ,  H01L31/18

    CPC classification number: H01L21/76237 ,  H01L21/76224 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14689 ,  H01L31/18

    Abstract: A method of making a backside illuminated image sensor includes forming a first isolation structure in a pixel region of a substrate, where a bottom of the first isolation structure is exposed at a back surface of the substrate. The method further includes forming a second isolation structure in a peripheral region of the substrate, where the second isolation structure has a depth less than a depth of the first isolation structure. Additionally, the method includes forming an implant region adjacent to at least a portion of sidewalls of the first isolation structure, where the portion of the sidewalls is located closer to the back surface than a front surface of the substrate, and where the second isolation structure is free of the implant region.

    Abstract translation: 制造背面照明图像传感器的方法包括在基板的像素区域中形成第一隔离结构，其中第一隔离结构的底部在基板的背面露出。 该方法还包括在衬底的周边区域中形成第二隔离结构，其中第二隔离结构的深度小于第一隔离结构的深度。 此外，该方法包括形成与第一隔离结构的侧壁的至少一部分相邻的注入区域，其中侧壁的该部分位于比衬底的前表面更靠近后表面的位置，并且其中第二隔离结构 没有植入区域。

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