公开(公告)号：US5580420A

公开(公告)日：1996-12-03

申请号：US307272

申请日：1994-09-16

申请人： Katsuya Watanabe ,  Tetsunori Kaji ,  Naoyuki Tamura ,  Kenji Nakata ,  Hiroyuki Shichida ,  Seiichi Watanabe ,  Sadayuki Okudaira ,  Keizo Suzuki

发明人： Katsuya Watanabe ,  Tetsunori Kaji ,  Naoyuki Tamura ,  Kenji Nakata ,  Hiroyuki Shichida ,  Seiichi Watanabe ,  Sadayuki Okudaira ,  Keizo Suzuki

IPC分类号： H01J37/32 ,  H01L21/00

CPC分类号： H01J37/32238 ,  H01J37/32192 ,  H01J37/32247 ,  H01J37/32275 ,  H01J37/32678

摘要： A microwave penetrating window and a cavity which are substantially equal in diameter to a plasma generating chamber are successively connected to the plasma generating chamber and microwaves are introduced via the cavity into the plasma generating chamber. A processing gas in the plasma generating chamber is converted into a plasma by means of the microwaves introduced into the plasma generating chamber and the microwaves in specific modes are resonated in between a microwave reflective interface with the plasma generated in the plasma generating chamber and the reflective edge face of the cavity. The microwaves in the specific modes are thus formed in the cavity and the energy of the microwaves in the specific modes is increased by resonance. The boosted energy is added to the plasma and the plasma is densified accordingly. Moreover, a plasma excellent in uniformity and stability can be generated by resonating the microwaves in the specific modes in the presence of a uniform electromagnetic field.

摘要翻译： 与等离子体发生室直径基本相等的微波穿透窗和空腔连续地连接到等离子体发生室，并且微波经由腔引入等离子体发生室。 等离子体发生室中的处理气体通过引入到等离子体发生室中的微波转换为等离子体，并且特定模式中的微波共振在与等离子体发生室中产生的等离子体的微波反射界面和反射 空腔的边缘面。 因此，特定模式中的微波形成在空腔中，并且特定模式中的微波的能量通过共振增加。 将升高的能量加入到等离子体中，并且等离子体相应地致密化。 此外，通过在存在均匀电磁场的情况下在特定模式中谐振微波，可以产生均匀性和稳定性优异的等离子体。

公开(公告)号：US5433789A

公开(公告)日：1995-07-18

申请号：US010051

申请日：1993-01-28

申请人： Yutaka Kakehi ,  Yoshinao Kawasaki ,  Keizo Suzuki ,  Kazuo Nojiri ,  Hiromichi Enami ,  Tetsunori Kaji ,  Seiichi Watanabe ,  Yoshifumi Ogawa

发明人： Yutaka Kakehi ,  Yoshinao Kawasaki ,  Keizo Suzuki ,  Kazuo Nojiri ,  Hiromichi Enami ,  Tetsunori Kaji ,  Seiichi Watanabe ,  Yoshifumi Ogawa

IPC分类号： C23C16/511 ,  H01J37/32 ,  C23C16/30 ,  H05H1/46

CPC分类号： H01J37/32229 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/32266 ,  H01J37/32284

摘要： A plasma processing apparatus has a waveguide along which microwaves are propagated from a microwave generator to a plasma-forming region in a low-pressure processing chamber. The waveguide has a large cross-sectional area, to enable a large region of plasma to be achieved. Uniformity and stability of the plasma are improved by a mode restrictor which inhibits mixing of propagation modes which is otherwise liable to occur in a wide waveguide. The mode restrictor consists of electrically-conductive dividers which divide the waveguide cross-section into an array of sub-guides before the plasma-forming region.

摘要翻译： 等离子体处理装置具有微波从微波发生器传播到低压处理室中的等离子体形成区域的波导。 波导具有大的横截面面积，以实现等离子体的大区域。 等离子体的均匀性和稳定性通过抑制混合传播模式的模式限制器来改善，否则传播模式容易发生在宽波导中。 模式限制器由导电分配器组成，其在等离子体形成区域之前将波导横截面分成子导轨阵列。

公开(公告)号：US5646489A

公开(公告)日：1997-07-08

申请号：US432861

申请日：1995-05-02

申请人： Yutaka Kakehi ,  Yoshinao Kawasaki ,  Keizo Suzuki ,  Kazuo Nojiri ,  Hiromichi Enami ,  Tetsunori Kaji ,  Seiichi Watanabe ,  Yoshifumi Ogawa

发明人： Yutaka Kakehi ,  Yoshinao Kawasaki ,  Keizo Suzuki ,  Kazuo Nojiri ,  Hiromichi Enami ,  Tetsunori Kaji ,  Seiichi Watanabe ,  Yoshifumi Ogawa

IPC分类号： C23C16/511 ,  H01J37/32 ,  H05H1/46

CPC分类号： H01J37/32229 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/32266 ,  H01J37/32284

摘要： A plasma processing apparatus has a waveguide along which microwaves are propagated from a microwave generator to a plasma-forming region in a low-pressure processing chamber. The waveguide has a large cross-sectional area, to enable a large region of plasma to be achieved. Uniformity and stability of the plasma are improved by a mode restrictor which inhibits mixing of propagation modes which is otherwise liable to occur in a wide waveguide. The mode restrictor consists of electrically conductive dividers which divide the waveguide cross-section into an array of sub-guides before the plasma-forming region.

摘要翻译： 等离子体处理装置具有微波从微波发生器传播到低压处理室中的等离子体形成区域的波导。 波导具有大的横截面面积，以实现等离子体的大区域。 等离子体的均匀性和稳定性通过抑制混合传播模式的模式限制器来改善，否则传播模式容易发生在宽波导中。 模式限制器由导电分配器组成，其在等离子体形成区域之前将波导横截面分成子导子阵列。

公开(公告)号：US4433228A

公开(公告)日：1984-02-21

申请号：US319987

申请日：1981-11-10

申请人： Shigeru Nishimatsu ,  Keizo Suzuki ,  Noriyuki Sakudo ,  Ken Ninomiya ,  Hidemi Koike ,  Osami Okada ,  Shinjiro Katagiri ,  Sadayuki Okudaira

发明人： Shigeru Nishimatsu ,  Keizo Suzuki ,  Noriyuki Sakudo ,  Ken Ninomiya ,  Hidemi Koike ,  Osami Okada ,  Shinjiro Katagiri ,  Sadayuki Okudaira

IPC分类号： H01J25/50 ,  H01J27/16 ,  H01J37/08 ,  H01J37/317 ,  H01J37/32 ,  H01L21/265 ,  H01L21/302 ,  H01L21/3065 ,  H05H1/46

CPC分类号： H01J37/32211 ,  H01J37/32192 ,  H01J37/32293

摘要： The microwave plasma source of this invention comprises a vacuum room which forms a discharging space with discharge gas introduced therein, a means for conducting the microwave to the discharging space so that the microwave electric field is provided in the discharging space, and a means for providing the magnetic field in the discharging space located on the microwave propagating path and made up of a permanent magnet which virtually propagates the microwave.

摘要翻译： 本发明的微波等离子体源包括形成放电空间的真空室，其中引入有放电气体，用于将微波传导到放电空间的装置，使得微波电场设置在放电空间中，以及用于提供 位于微波传播路径上的放电空间中的磁场，并由实际上传播微波的永磁体组成。

公开(公告)号：US4101411A

公开(公告)日：1978-07-18

申请号：US787878

申请日：1977-04-15

申请人： Keizo Suzuki ,  Sadayuki Okudaira ,  Ichiro Kanomata ,  Noriyuki Sakudo

发明人： Keizo Suzuki ,  Sadayuki Okudaira ,  Ichiro Kanomata ,  Noriyuki Sakudo

IPC分类号： H01J37/32 ,  C23C15/00 ,  B01K1/00

CPC分类号： H01J37/32229 ,  H01J37/32192 ,  H01J37/32238

摘要： In an apparatus wherein a microwave discharge is caused by introducing a discharge gas into a discharge area to which a microwave electric field is supplied by a microwave coupler and to which an external magnetic field is supplied by a magnetic field generator, whereby the surface of a substrate is etched by using ions in a generated plasma, a plasma etching apparatus is characterized by employing a round waveguide as the microwave coupler, the discharge area being formed within the round waveguide.

摘要翻译： 在微波放电是通过将放电气体引入到由微波耦合器供给微波电场的放电区域中并且由磁场发生器供应外部磁场的情况下引起的微波放电的装置，由此， 通过在产生的等离子体中使用离子蚀刻衬底，等离子体蚀刻装置的特征在于采用圆形波导作为微波耦合器，放电区域形成在圆形波导内。

公开(公告)号：US4436581A

公开(公告)日：1984-03-13

申请号：US370147

申请日：1982-04-20

申请人： Sadayuki Okudaira ,  Hiroji Saida ,  Yoshio Sakai ,  Shigeru Nishimatsu ,  Keizo Suzuki

发明人： Sadayuki Okudaira ,  Hiroji Saida ,  Yoshio Sakai ,  Shigeru Nishimatsu ,  Keizo Suzuki

IPC分类号： C23F4/00 ,  H01L21/3065 ,  H01L21/3213 ,  H01L21/308

CPC分类号： H01L21/32137 ,  H01L21/3065

摘要： A plurality of silicon regions different in impurity concentration from each other are simultaneously subjected to dry etching in such a manner that neutral particles in a plasma do not substantially participate in etching and therefore etching is performed substantially by ions. Thus, the silicon regions different in impurity concentration from each other can be etched at substantially the same etching rate, independently of impurity concentration.

摘要翻译： 将杂质浓度彼此不同的多个硅区域同时进行干蚀刻，使得等离子体中的中性粒子基本上不参与蚀刻，因此蚀刻基本上由离子进行。 因此，杂质浓度彼此不同的硅区域可以以与杂质浓度无关的蚀刻速率基本相同。

公开(公告)号：US4844767A

公开(公告)日：1989-07-04

申请号：US158126

申请日：1988-02-16

申请人： Sadayuki Okudaira ,  Shigeru Nishimatsi ,  Keizo Suzuki ,  Ken Ninomiya

发明人： Sadayuki Okudaira ,  Shigeru Nishimatsi ,  Keizo Suzuki ,  Ken Ninomiya

IPC分类号： H01L21/302 ,  C23F4/00 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/3213

CPC分类号： H01J37/32192 ,  H01J37/32706 ,  H01L21/32136 ,  H01J2237/3346

摘要： A plasma which is formed by the contact between a microwave and a reaction gas is brought into contact with an article to be etched which is AC-biased, thereby effecting etching of an exposed region of the article. The etching is carried out in a state wherein the self-bias formed between the plasma and the article is minimized, whereby it is possible to effect etching which provides high selectivity and which enables a substantially vertical side wall to be formed.

摘要翻译： 通过微波和反应气体之间的接触而形成的等离子体与被AC偏压的被蚀刻物接触，从而进行对物品的暴露区域的蚀刻。 在等离子体和制品之间形成的自偏压最小化的状态下进行蚀刻，从而可以实现提供高选择性的蚀刻，并且能够形成基本垂直的侧壁。

公开(公告)号：US4579623A

公开(公告)日：1986-04-01

申请号：US642801

申请日：1984-08-21

申请人： Keizo Suzuki ,  Ken Ninomiya ,  Shigeru Nishimatsu ,  Sadayuki Okudaira ,  Osami Okada

发明人： Keizo Suzuki ,  Ken Ninomiya ,  Shigeru Nishimatsu ,  Sadayuki Okudaira ,  Osami Okada

IPC分类号： H01L21/205 ,  C23C16/511 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/318 ,  H01L21/3213 ,  H01L21/306 ,  B05B5/02 ,  B05D3/06 ,  B44C1/22

CPC分类号： H01J37/32935 ,  C23C16/511 ,  H01L21/30655 ,  H01L21/3185 ,  H01L21/32135 ,  H01L21/32136 ,  H01L21/32137

摘要： A gas is introduced into a vacuum chamber after the vacuum chamber is evacuated, and a plasma is generated within at least part of the vacuum chamber. The specimen surface is exposed to the plasma so that the surface is treated. A plurality of different gases, such as SF.sub.6, N.sub.2, and the like, are used as the gas being introduced. The quantity of the gas is changed during the surface treatment. A controller is used as a mechanism for changing the quantity of gas introduced. The controller is operated in accordance with a predetermined program, or by signals obtained by detecting the surface conditions of the specimen during the surface treatment.

摘要翻译： 在真空室抽真空之后，将气体引入真空室中，并且在真空室的至少一部分内产生等离子体。 将样品表面暴露于等离子体，使得表面被处理。 使用多种不同的气体，例如SF 6，N 2等，作为被引入的气体。 在表面处理期间，气体的量变化。 控制器用作改变引入气体量的机构。 控制器根据预定的程序或通过在表面处理期间检测样品的表面状态而获得的信号进行操作。

公开(公告)号：US4330384A

公开(公告)日：1982-05-18

申请号：US89093

申请日：1979-10-29

申请人： Sadayuki Okudaira ,  Keizo Suzuki ,  Shigeru Nishimatsu ,  Ichiro Kanomata

发明人： Sadayuki Okudaira ,  Keizo Suzuki ,  Shigeru Nishimatsu ,  Ichiro Kanomata

IPC分类号： H01L21/3065 ,  H01L21/3213 ,  C23F1/02 ,  H05H1/24

CPC分类号： H01L21/32135 ,  H01L21/3065 ,  H01L21/32137

摘要： Micro-wave plasma etching is carried out with a gas containing at least SF.sub.6 as an etching gas at a high etching rate of silicon, and a high selectivity, with an easy monitoring and a low temperature dependency.

摘要翻译： 微波等离子体蚀刻通过在硅的高蚀刻速率下以至少含有SF 6的气体作为蚀刻气体进行，并且具有高选择性，易于监测和低温度依赖性。

公开(公告)号：US4462863A

公开(公告)日：1984-07-31

申请号：US459240

申请日：1983-01-19

申请人： Shigeru Nishimatsu ,  Keizo Suzuki ,  Ken Ninomiya ,  Ichiro Kanomata ,  Sadayuki Okudaira ,  Hiroji Saida

发明人： Shigeru Nishimatsu ,  Keizo Suzuki ,  Ken Ninomiya ,  Ichiro Kanomata ,  Sadayuki Okudaira ,  Hiroji Saida

IPC分类号： C23F4/00 ,  H01J37/32 ,  H01L21/302 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213 ,  B44C1/22 ,  C03C15/00 ,  C03C25/06

CPC分类号： H01L21/30604 ,  H01J37/32192 ,  H01J37/3266 ,  H01J2237/3343 ,  H01L21/31116 ,  H01L21/32136 ,  H01L21/32137

摘要： A microwave plasma etching system is disclosed which comprises a vacuum chamber for providing a discharge space and provided with an inlet for introducing a discharge gas containing a fluorine-containing gas, hydrogen and oxygen, magnetic field forming means for forming a magnetic field in the discharge space, microwave electric field forming means for forming a microwave electric field in the discharge space, and substrates holding means for holding substrates to be processed in the vacuum chamber. In the microwave plasma etching, the discharge gas containing fluorine, hydrogen with or without oxygen provides excellent etching almost free from side etching.

摘要翻译： 公开了一种微波等离子体蚀刻系统，其包括用于提供放电空间的真空室，并且设有用于引入含有含氟气体，氢气和氧气的放电气体的入口，用于在放电中形成磁场的磁场形成装置 用于在放电空间中形成微波电场的空间微波电场形成装置和用于保持在真空室中待处理的基板的基板保持装置。 在微波等离子体蚀刻中，含有氟的放电气体，具有或不具有氧气的氢提供几乎不受侧面蚀刻的优良蚀刻。