METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE
    2.
    发明申请
    METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE 有权
    制造半导体器件的方法和半导体器件

    公开(公告)号:US20120319274A1

    公开(公告)日:2012-12-20

    申请号:US13526821

    申请日:2012-06-19

    IPC分类号: H01L23/498 H01L21/56

    摘要: A circuit substrate having a mounting surface on which a semiconductor chip is mounted and at least one connection pad formed on the mounting surface is connected to a support plate having at least one mounting portion with a diameter larger than a diameter of the connection pad, through a truncated-cone-shaped solder layer which is formed from at least one solder ball on the basis of a difference between the diameter of the mounting portion and the diameter of the connection pad. The resin layer is formed between the mounting surface of the circuit substrate and the support plate and the support plate is subsequently removed, whereby a truncated-cone-shaped via is formed in the resin layer along the truncated-cone-shaped solder layer. A reflow process is thereafter performed, whereby the truncated-cone-shaped solder layer is formed into a spherical solder layer within the truncated-cone-shaped via.

    摘要翻译: 具有安装有半导体芯片的安装面的电路基板和形成在安装面上的至少一个连接焊盘连接到具有至少一个直径大于连接焊盘直径的安装部分的支撑板上,通过 基于安装部分的直径和连接焊盘的直径之间的差异,由至少一个焊球形成的截锥形焊料层。 树脂层形成在电路基板的安装面和支撑板之间,随后移除支撑板,从而沿着截锥形焊料层在树脂层中形成截锥形的通孔。 此后进行回流工艺,由此截锥锥形焊料层在截锥形通孔内形成球形焊料层。