公开(公告)号：US4630091A

公开(公告)日：1986-12-16

申请号：US601928

申请日：1984-04-19

申请人： Takao Kuroda ,  Shigenori Matsumoto ,  Kenju Horii ,  Takahiro Yamada

发明人： Takao Kuroda ,  Shigenori Matsumoto ,  Kenju Horii ,  Takahiro Yamada

IPC分类号： H01L27/146 ,  H04N5/335 ,  H04N5/341 ,  H04N5/359 ,  H04N5/365 ,  H04N5/369 ,  H04N5/374 ,  H01L27/14 ,  H01L31/00

CPC分类号： H01L27/14643 ,  H01L27/14609

摘要： Photoelectric transducing elements are formed in a first impurity-doped region (14), and signal charge reading-out circuits (2, 3) are formed in a second impurity-doped region which is deeper than the first impurity-doped region, so that fixed pattern noise is drastically reduced, improving picture quality.

摘要翻译： 光电转换元件形成在第一杂质掺杂区域（14）中，并且信号电荷读出电路（2,3）形成在比第一杂质掺杂区域更深的第二杂质掺杂区域中，使得 固定图案噪声大大降低，提高图像质量。

公开(公告)号：US4498013A

公开(公告)日：1985-02-05

申请号：US363518

申请日：1982-03-30

申请人： Takao Kuroda ,  Kenju Horii ,  Shigenori Matsumoto

发明人： Takao Kuroda ,  Kenju Horii ,  Shigenori Matsumoto

IPC分类号： H01L27/148 ,  H04N5/335 ,  H04N5/359 ,  H04N5/369 ,  H04N5/3728 ,  H04N5/374 ,  H01L27/14

CPC分类号： H01L27/14887

摘要： The invention provides a solid state image pickup device having a plurality of photoelectric transducers and a vertical transfer CCD (charge coupled device) unit. A concentration of an impurity of a semiconductor substrate region surrounding each of the vertical transfer CCD in the vicinity of each of the photoelectric transducers is higher than that below each of the photoelectric transducers.

摘要翻译： 本发明提供一种具有多个光电换能器和垂直转移CCD（电荷耦合器件）单元的固态图像拾取器件。 每个光电换能器附近的每个垂直转移CCD周围的半导体衬底区域的杂质浓度高于每个光电换能器的浓度。

公开(公告)号：US4564766A

公开(公告)日：1986-01-14

申请号：US701648

申请日：1985-02-14

申请人： Takao Kuroda ,  Kenju Horii

发明人： Takao Kuroda ,  Kenju Horii

IPC分类号： H01L27/148 ,  H04N5/341 ,  H01L27/14

CPC分类号： H04N3/1537 ,  H01L27/14831

摘要： A method for driving a solid state image pickup device is provided in which charges stored in a group of photoelectric conversion elements of odd rows are first discharged or read out, and then charges stored in a group of photoelectric conversion elements of even rows are read out or discharged, thereafter, the charges stored in the group of photoelectric conversion elements of even rows are first discharged or read out and then charges stored in the group of photoelectric conversion elements of odd rows and read out or discharged.

摘要翻译： 提供一种用于驱动固态图像拾取装置的方法，其中首先将存储在奇数行的一组光电转换元件中的电荷放电或读出，然后读出存储在偶数行的一组光电转换元件中的电荷 或放电，此后首先对存储在偶数行的光电转换元件组中的电荷进行放电或读出，然后存储在奇数行的光电转换元件组中的电荷被读出或放电。

公开(公告)号：US4947224A

公开(公告)日：1990-08-07

申请号：US251026

申请日：1988-09-26

申请人： Takao Kuroda ,  Toshihiro Kuriyama ,  Kenju Horii ,  Hiroyuki Mizuno

发明人： Takao Kuroda ,  Toshihiro Kuriyama ,  Kenju Horii ,  Hiroyuki Mizuno

IPC分类号： H01L27/148

CPC分类号： H01L27/14887 ,  H01L27/14831

摘要： In a solid state image sensing device of P-conductivity type well, photo-electro converting region (1) are configured to have a larger area as the depth increases, so that excessive electric charges generated in the p-conductivity type well are easily transferred from expanded peripheral parts (7) at the bottom (1b) to channel (3), without being undesirably transferred downward through thin p-conductivity type region 6 to substrate (4), and smear electric charges which has been generated in a thin p-conductivity type well under the photo-electro converting region in the conventional device is suppressed, to effectively decrease the smear phenomenon.

摘要翻译： 在P导电型阱的固体摄像装置中，光电转换区域（1）被配置为随着深度增加而具有较大面积，使得在p导电型阱中产生的过多电荷容易转移 从底部（1b）的扩大的周边部分（7）到通道（3），而不会不期望地通过薄的p导电类型区域6向下传递到基板（4），并且将在薄p中产生的电荷 在传统器件的光电转换区域下良好的导电型被抑制，有效地减少了涂抹现象。

公开(公告)号：US4435897A

公开(公告)日：1984-03-13

申请号：US320845

申请日：1981-11-12

申请人： Takao Kuroda ,  Kenju Horii

发明人： Takao Kuroda ,  Kenju Horii

IPC分类号： H01L27/148 ,  H01L31/113 ,  H01L31/18 ,  H04N5/335 ,  H04N5/359 ,  H04N5/369 ,  H04N5/3728 ,  H04N5/374 ,  H01L31/10

CPC分类号： H01L31/1804 ,  H01L27/14887 ,  H01L31/1133 ,  Y02E10/547 ,  Y02P70/521

摘要： In the fabrication of a solid-state image sensor of the type having a plurality of photoelectric transducer means on a semiconductor substrate of one conductivity, excessive charge drain regions each provided with a plurality of first electrodes and second electrodes which function as a gate for controlling the drain of excessive charge, impurities or dopants of the other conductivity are introduced immediately below each of the regions at which the first electrodes are to be formed; thereafter, the first and second electrodes are formed; and impurities or dopants which are same as the above-described impurities or dopants are introduced while using the first and second electrodes as a masking pattern, whereby the photoelectric transducer means and drain regions are formed.

摘要翻译： 在具有一个导电性的半导体衬底上具有多个光电传感器装置的类型的固态图像传感器的制造中，每个设置有多个第一电极和第二电极的过多的电荷漏极区域用作控制栅极 过量电荷的漏极，另一种导电性的杂质或掺杂剂被立即引入要形成第一电极的每个区域的下方; 此后，形成第一和第二电极; 并且在使用第一和第二电极作为掩模图案的同时引入与上述杂质或掺杂剂相同的杂质或掺杂剂，由此形成光电传感器装置和漏极区域。

公开(公告)号：US5041392A

公开(公告)日：1991-08-20

申请号：US544620

申请日：1990-06-27

申请人： Takao Kuroda ,  Toshihiro Kuriyama ,  Kenju Horii ,  Hiroyuki Mizuno

发明人： Takao Kuroda ,  Toshihiro Kuriyama ,  Kenju Horii ,  Hiroyuki Mizuno

IPC分类号： H01L27/148

CPC分类号： H01L27/14887 ,  H01L27/14831

摘要： In a solid state image sensing device of p-conductivity type well, photo-electro converting region (1) are configurated to have larger area as depth increases, so that excessive electric charges generated in the p-conductivity type well are easily transferred from expanded peripheral parts (7) at the bottom (1b) to channel (3), without being undesirably transferred downward through thin p-conductivity type region 6 to substrate (4), and smear electric charges which has been generated in a thin p-conductivity type well under the photo-electro converting region in the conventional device is suppressed, to effectively decrease the smear phenomenon.

公开(公告)号：US06248133B1

公开(公告)日：2001-06-19

申请号：US08631834

申请日：1996-04-10

申请人： Hiroyoshi Komobuchi ,  Akira Fukumoto ,  Takahiro Yamada ,  Takao Kuroda ,  Yuji Matsuda

发明人： Hiroyoshi Komobuchi ,  Akira Fukumoto ,  Takahiro Yamada ,  Takao Kuroda ,  Yuji Matsuda

IPC分类号： H04M5335

CPC分类号： H01L27/14806

摘要： A solid state imaging device has: a first polysilicon layer 901; a second polysilicon layer 902; a photoelectric converting portion or PD 903; a read gate 904; a read channel 905 (in this case, an N-layer) which is formed in a semiconductor below the read gate; a P-layer 906 which prevents a signal charge from erroneously entering a VCCD of a unit pixel adjacent in a horizontal direction; a P-layer 907 which defines the transfer channel region of a VCCD; and a VCCD 908 which transfers a signal charge in the direction of the arrows. A unit pixel 900 is indicated by a one-dot chain line. The two-dimensionally arrayed solid state imaging device is driven by driving pulses of eight phases in total, namely, a driving pulse &phgr;V1 911, a driving pulse &phgr;V2 912, a driving pulse &phgr;V3 913, a driving pulse &phgr;V4 914, a driving pulse &phgr;V5 915, a driving pulse &phgr;V6 916, a driving pulse &phgr;V7 917, and a driving pulse &phgr;V8 918.

摘要翻译： 固态成像装置具有：第一多晶硅层901; 第二多晶硅层902; 光电转换部分或PD 903; 读门904; 在读取栅极下方形成半导体的读通道905（在这种情况下为N层）; P层906，其防止信号电荷错误地进入水平方向相邻的单位像素的VCCD; 限定VCCD的传输通道区域的P层907; 以及VCCD 908，其沿箭头方向传送信号电荷。 单位像素900由单点划线表示。 二维排列的固态成像装置由驱动脉冲phiV1 911，驱动脉冲phiV2 912，驱动脉冲phiV3 913，驱动脉冲phiV4 914，驱动脉冲phiV5 驱动脉冲phiV6 916，驱动脉冲phiV7 917，驱动脉冲phiV8 918。

公开(公告)号：US20080012048A1

公开(公告)日：2008-01-17

申请号：US11570658

申请日：2005-12-14

申请人： Takao Kuroda

发明人： Takao Kuroda

IPC分类号： H01L27/148 ,  H01L21/339 ,  H01L29/76

CPC分类号： H01L27/14689 ,  H01L27/14806 ,  H01L29/76833

摘要： In a semiconductor device 10 including a structure where transfer electrodes 2a to 2c are disposed on a semiconductor substrate 1 via an insulation layer 3, a first semiconductor region 4 of a first conductivity type, a second semiconductor region 5 of a conductivity type opposite to the first conductivity type, and a third semiconductor region 6 of the first conductivity type in a position that overlaps a region of the semiconductor substrate 1 directly underneath the transfer electrodes 2a to 2c. The second semiconductor region 5 is formed on the first semiconductor region 4. The third semiconductor region 6 is formed on the second semiconductor region 5 so that a position of a maximal point 8 of electric potential of the second semiconductor region 5 when being depleted is deeper than a position of the maximal point 8 in a case where the third semiconductor region 6 does not exist.

摘要翻译： 在包括通过绝缘层3设置在半导体衬底1上的转移电极2a至2c的结构的半导体器件10中，具有第一导电类型的第一半导体区域4，导电类型的第二半导体区域5 第一导电类型的第三半导体区域6以及直接位于转移电极2a至2c下方的与半导体衬底1的区域重叠的位置。 第二半导体区域5形成在第一半导体区域4上。 第三半导体区域6形成在第二半导体区域5上，使得当第三半导体区域6被耗尽时第二半导体区域5的电位的最大点8的位置比第三半导体区域5的第三半导体区域5的最大点8的位置更深 半导体区域6不存在。

公开(公告)号：US20060119725A1

公开(公告)日：2006-06-08

申请号：US11332885

申请日：2006-01-17

申请人： Takao Kuroda ,  Sei Suzuki ,  Kidera Akito

发明人： Takao Kuroda ,  Sei Suzuki ,  Kidera Akito

IPC分类号： H04N5/335

CPC分类号： H04N5/3728 ,  H04N5/357 ,  H04N5/3597

摘要： In making solid state imaging devices smaller and increasing their number of pixels, it is desirable to increase the charge amount that can be handled per unit area of the transfer portions. It is possible to achieve this by making the insulating film thinner, but this leads to electric fields in the semiconductor substrate that are too strong, and causes problems such as the generation of noise and the deterioration of the transfer efficiency. This invention relaxes potential steps in the transfer region by applying, when a signal charge 1 is being read out (t=t2), a high voltage to the electrode 43 for reading out the signal charge, a low voltage to at least one of the electrodes 41, 45-47 for preventing unnecessary mixing of signal charges, and an intermediate voltage between the high voltage and the low voltage to the electrodes 42 and 44, which are adjacent to the electrode 43 to which the high voltage is applied.

摘要翻译： 在使固态成像装置更小并且其像素数量增加的情况下，期望增加可以在转印部分的每单位面积处理的电荷量。 可以通过使绝缘膜更薄而实现这一点，但是这导致半导体衬底中的电场太强，并且引起噪声的产生和传输效率的劣化等问题。 本发明通过在读出信号电荷1（t = t 2 2）时施加向读出信号电荷的电极43施加的高电压，放松了转印区域中的潜在步骤， 低电压至至少一个电极41,45-47，用于防止信号电荷的不必要的混合，以及与电极43相邻的电极42和44的高电压和低电压之间的中间电压， 施加高电压。

公开(公告)号：US5837565A

公开(公告)日：1998-11-17

申请号：US450621

申请日：1995-05-25

申请人： Takao Kuroda ,  Yasuhiro Shiraki

发明人： Takao Kuroda ,  Yasuhiro Shiraki

IPC分类号： H01L29/812 ,  H01L21/20 ,  H01L21/338 ,  H01L29/201 ,  H01L29/205 ,  H01L29/778 ,  H01L29/80

CPC分类号： H01L29/205 ,  H01L29/7783 ,  Y10S438/938

摘要： Disclosed is a semiconductor device comprising an undoped GaAs layer, an intermediate undoped layer and an undoped Ga.sub.1-x Al.sub.x As layer which are successively provided on a substrate made of a semiinsulating GaAs crystal; the intermediate undoped layer being an undoped In.sub.y Ga.sub.1-y As layer, an undoped GaAs.sub.1-z Sb.sub.z layer, a superlattice layer which includes an undoped In.sub.y Ga.sub.1-y As layer and an undoped GaAs.sub.1-z Sb.sub.z layer, a superlattice layer which includes an undoped In.sub.y Ga.sub.1-y As layer and an undoped GaAs layer, or a superlattice layer which includes an undoped GaAs.sub.1-z Sb layer and an undoped GaAs layer. When applied to a high electron mobility transistor, this semiconductor device affords a high current and a high speed and has the merit of a small dispersion in the threshold voltage thereof.