公开(公告)号：US5934421A

公开(公告)日：1999-08-10

申请号：US763954

申请日：1996-12-11

申请人： Takao Nakadate ,  Akira Kashiwagi ,  Takashi Nezu ,  Naoki Makita

发明人： Takao Nakadate ,  Akira Kashiwagi ,  Takashi Nezu ,  Naoki Makita

IPC分类号： F16F9/32 ,  F16F9/348 ,  F16F9/46

CPC分类号： F16F9/325 ,  F16F9/348 ,  F16F9/46

摘要： In a damping force control type hydraulic shock absorber, the flow path area of a port is changed by moving a spool according to an electric current supplied to an actuator, and thus the flow path area of a passage between cylinder upper and lower chambers is directly changed, thereby controlling orifice characteristics. Moreover, the pressure in a pilot chamber is changed according to the resulting pressure loss so as to change the valve opening pressure of a disk valve, thereby controlling valve characteristics. This enables the damping force characteristic control range to be widened. The pilot chamber is formed by the side wall of a valve member, the disk valve, a seal disk, and a seal member, also, the seal member has no sliding portion. It is therefore possible to minimize the leakage of hydraulic fluid and to obtain stable damping force characteristics. It is also possible to minimize variations in damping force with temperature changes.

摘要翻译： 在阻尼力控制型液压减震器中，通过根据供给到致动器的电流移动阀芯来改变端口的流路面积，因此气缸上下室之间的通道的流路面积直接 改变，从而控制孔特性。 此外，先导室中的压力根据所产生的压力损失而改变，从而改变盘阀的开阀压力，从而控制阀特性。 这使阻尼力特性控制范围变宽。 引导室由阀构件的侧壁，盘阀，密封盘和密封构件形成，密封构件也没有滑动部。 因此，可以使液压流体的泄漏最小化并获得稳定的阻尼力特性。 也可以通过温度变化来最小化阻尼力的变化。

公开(公告)号：US5975258A

公开(公告)日：1999-11-02

申请号：US966418

申请日：1997-11-07

申请人： Takashi Nezu ,  Naoki Makita

发明人： Takashi Nezu ,  Naoki Makita

IPC分类号： F16F9/46 ,  F16F9/348 ,  F16F9/512 ,  F16F9/34

CPC分类号： F16F9/5126 ,  F16F9/348 ,  F16F9/3482

摘要： A damping force control type hydraulic shock absorber of the present invention includes a cylindrical valve member. One end of the cylinder valve member is closed. Also, the shock absorber includes annular inner and outer seal portions, and a valve seat provided there-between, all of which project from an inner wall of a bottom portion of the valve member and are concentric with one another. A disk valve is secured at an inner peripheral portion thereof to the inner seal portion and abuts at an outer peripheral portion thereof on the valve seat. A retainer disk stacks on the disk valve. An annular seal ring abuts at an inner peripheral portion thereof of an outer peripheral edge portion of the retainer disk, and is secured at an outer peripheral portion thereof to the outer seal portion. A blocking member is connected to an open end of the valve member so that a pilot chamber is formed by the retainer disk, the seal ring and the blocking member.

摘要翻译： 本发明的阻尼力控制型液压减震器包括圆柱形阀构件。 气缸阀构件的一端关闭。 此外，减震器还包括环形内密封部分和外部密封部分，以及设置在其间的阀座，所有阀座都从阀构件的底部的内壁突出并且彼此同心。 盘阀在其内周部固定在内密封部上，并与阀座的外周部抵接。 保持盘堆叠在盘阀上。 环形密封环与保持盘的外周缘部的内周部抵接，并且在其外周部固定于外密封部。 阻挡构件连接到阀构件的开口端，使得先导室由保持盘，密封环和阻挡构件形成。

公开(公告)号：US08999823B2

公开(公告)日：2015-04-07

申请号：US13125865

申请日：2009-10-20

申请人： Naoki Makita ,  Hiroshi Nakatsuji

发明人： Naoki Makita ,  Hiroshi Nakatsuji

IPC分类号： H01L27/12 ,  H01L27/146 ,  G09G5/10 ,  G06F3/042 ,  H01L29/786

CPC分类号： H01L27/14665 ,  G06F3/042 ,  G09G5/10 ,  H01L27/12 ,  H01L27/1229 ,  H01L29/78633

摘要： A semiconductor device according to the present invention includes a thin-film transistor and a thin-film diode. The respective semiconductor layers and of the thin-film transistor and the thin-film diode are crystalline semiconductor layers that have been formed by crystallizing the same crystalline semiconductor film. Ridges have been formed on the surface of the semiconductor layer of the thin-film diode. And the semiconductor layer of the thin-film diode has a greater surface roughness than the semiconductor layer of the thin-film transistor.

摘要翻译： 根据本发明的半导体器件包括薄膜晶体管和薄膜二极管。 各半导体层以及薄膜晶体管和薄膜二极管是通过使相同的结晶半导体膜结晶而形成的结晶半导体层。 已经在薄膜二极管的半导体层的表面上形成了脊。 并且薄膜二极管的半导体层具有比薄膜晶体管的半导体层更大的表面粗糙度。

公开(公告)号：US08460954B2

公开(公告)日：2013-06-11

申请号：US13125776

申请日：2009-10-22

申请人： Masaki Yamanaka ,  Hiroshi Nakatsuji ,  Naoki Makita

发明人： Masaki Yamanaka ,  Hiroshi Nakatsuji ,  Naoki Makita

IPC分类号： H01L21/00 ,  H01L21/20 ,  H01L21/36 ,  H01L27/14 ,  H01L29/04 ,  H01L29/15 ,  H01L31/036

CPC分类号： H01L29/66757 ,  G02F1/1368 ,  G02F2001/13312 ,  H01L27/0629 ,  H01L27/12 ,  H01L27/1229 ,  H01L27/1233 ,  H01L27/14612 ,  H01L29/78633 ,  H01L29/861

摘要： A semiconductor device includes a thin film transistor and a thin film diode on a same substrate. A semiconductor layer (109) of the thin film transistor and a semiconductor layer (110) of the thin film diode are crystalline semiconductor layers formed by crystallizing the same non-crystalline semiconductor film. The thickness of the semiconductor layer (110) of the thin film diode is greater than the thickness of the semiconductor layer (109) of the thin film transistor, and the surface of the semiconductor layer (110) of the thin film diode is rougher than the surface of the semiconductor layer (109) of the thin film transistor.

摘要翻译： 半导体器件在同一衬底上包括薄膜晶体管和薄膜二极管。 薄膜晶体管的半导体层（109）和薄膜二极管的半导体层（110）是通过使相同的非晶半导体膜结晶而形成的结晶半导体层。 薄膜二极管的半导体层（110）的厚度大于薄膜晶体管的半导体层（109）的厚度，并且薄膜二极管的半导体层（110）的表面比 薄膜晶体管的半导体层（109）的表面。

公开(公告)号：US20110198608A1

公开(公告)日：2011-08-18

申请号：US13125776

申请日：2009-10-22

申请人： Masaki Yamanaka ,  Hiroshi Nakatsuji ,  Naoki Makita

发明人： Masaki Yamanaka ,  Hiroshi Nakatsuji ,  Naoki Makita

IPC分类号： H01L31/0368 ,  H01L29/786 ,  H01L21/20 ,  H01L29/04 ,  H01L31/14 ,  B82Y99/00

CPC分类号： H01L29/66757 ,  G02F1/1368 ,  G02F2001/13312 ,  H01L27/0629 ,  H01L27/12 ,  H01L27/1229 ,  H01L27/1233 ,  H01L27/14612 ,  H01L29/78633 ,  H01L29/861

摘要： A semiconductor device includes a thin film transistor and a thin film diode on a same substrate. A semiconductor layer (109) of the thin film transistor and a semiconductor layer (110) of the thin film diode are crystalline semiconductor layers formed by crystallizing the same non-crystalline semiconductor film. The thickness of the semiconductor layer (110) of the thin film diode is greater than the thickness of the semiconductor layer (109) of the thin film transistor, and the surface of the semiconductor layer (110) of the thin film diode is rougher than the surface of the semiconductor layer (109) of the thin film transistor.

摘要翻译： 半导体器件在同一衬底上包括薄膜晶体管和薄膜二极管。 薄膜晶体管的半导体层（109）和薄膜二极管的半导体层（110）是通过使相同的非晶半导体膜结晶而形成的结晶半导体层。 薄膜二极管的半导体层（110）的厚度大于薄膜晶体管的半导体层（109）的厚度，并且薄膜二极管的半导体层（110）的表面比 薄膜晶体管的半导体层（109）的表面。

公开(公告)号：US20100181575A1

公开(公告)日：2010-07-22

申请号：US12667465

申请日：2008-06-05

申请人： Naoki Makita ,  Masato Hashimoto

发明人： Naoki Makita ,  Masato Hashimoto

IPC分类号： H01L33/00 ,  H01L29/786 ,  H01L21/336

CPC分类号： H01L27/127 ,  H01L27/1214 ,  H01L27/1274 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78618

摘要： A semiconductor device includes at least one thin-film transistor 116, which includes: a crystalline semiconductor layer 120 including a region 110 to be a channel region and source and drain regions 113; a gate electrode 107 for controlling the conductivity of the region 110 to be a channel region; a gate insulating film 106 arranged between the semiconductor layer 120 and the gate electrode 107; and source and drain electrodes 115 connected to the source and drain regions 113, respectively. At least one of the source and drain regions 113 contains an element to be a donor or an acceptor and a rare-gas element, but the region 110 to be a channel region does not contain the rare-gas element. The atomic weight of the rare-gas element is greater than that of the element to be a donor or an acceptor. The concentration of the rare-gas element in the at least one region as measured in the thickness direction thereof decreases continuously from the upper surface of the at least one region toward its lower surface.

摘要翻译： 半导体器件包括至少一个薄膜晶体管116，其包括：晶体半导体层120，其包括作为沟道区的区域110以及源极和漏极区113; 用于将区域110的导电性控制为沟道区的栅电极107; 布置在半导体层120和栅电极107之间的栅极绝缘膜106; 以及分别连接到源区113和漏区113的源电极115和漏电极115。 源极区域113和漏极区域113中的至少一个包含作为供体或受体的元素和稀有气体元素，但是作为沟道区域的区域110不含有稀有气体元素。 稀有气体元素的原子量大于作为供体或受体的元素的原子量。 在其厚度方向上测量的至少一个区域中的稀有气体元素的浓度从至少一个区域的上表面向其下表面连续地减小。

公开(公告)号：US07612375B2

公开(公告)日：2009-11-03

申请号：US10421841

申请日：2003-04-24

申请人： Naoki Makita

发明人： Naoki Makita

IPC分类号： H01L29/04 ,  H01L29/76

CPC分类号： H01L27/1229 ,  H01L27/1214 ,  H01L27/127 ,  H01L27/1277 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66757

摘要： A semiconductor device includes at least one thin-film transistor, which includes a semiconductor layer, a gate electrode and a gate insulating film. In the semiconductor layer, a crystalline region, including a channel forming region, a source region and a drain region, is defined. The gate electrode is provided to control the conductivity of the channel forming region. The gate insulating film is provided between the gate electrode and the semiconductor layer. The semiconductor layer includes a gettering region outside of the crystalline region thereof.

摘要翻译： 半导体器件包括至少一个薄膜晶体管，其包括半导体层，栅极电极和栅极绝缘膜。 在半导体层中，限定了包括沟道形成区域，源极区域和漏极区域的结晶区域。 提供栅电极以控制沟道形成区的导电性。 栅极绝缘膜设置在栅电极和半导体层之间。 半导体层包括其结晶区域外的吸杂区域。

公开(公告)号：US07396709B2

公开(公告)日：2008-07-08

申请号：US11780573

申请日：2007-07-20

申请人： Naoki Makita

发明人： Naoki Makita

IPC分类号： H01L21/00

CPC分类号： H01L27/12 ,  H01L27/1285 ,  H01L29/06 ,  H01L29/42384

摘要： A semiconductor device includes a thin film transistor including a semiconductor layer that includes a channel region, a source region and a drain region, a gate insulating film provided on the semiconductor layer, and a gate electrode for controlling the conductivity of the channel region, wherein the surface of the semiconductor layer includes a minute protruding portion, and the side surface inclination angle of the gate electrode is larger than the inclination angle of the protruding portion of the semiconductor layer.

摘要翻译： 半导体器件包括薄膜晶体管，其包括包括沟道区，源极区和漏极区的半导体层，设置在半导体层上的栅极绝缘膜，以及用于控制沟道区的导电性的栅电极，其中 半导体层的表面包括微小突出部分，并且栅电极的侧表面倾斜角度大于半导体层的突出部分的倾斜角度。

公开(公告)号：US07049183B2

公开(公告)日：2006-05-23

申请号：US10699460

申请日：2003-11-03

申请人： Naoki Makita ,  Michinori Iwai ,  Shinya Morino ,  Takayuki Tsutsumi

发明人： Naoki Makita ,  Michinori Iwai ,  Shinya Morino ,  Takayuki Tsutsumi

IPC分类号： H01L21/84 ,  H01L21/00

CPC分类号： H01L21/02672 ,  H01L21/02675 ,  H01L21/2022 ,  H01L27/12 ,  H01L27/1277 ,  H01L29/41733 ,  H01L29/66757 ,  H01L29/78675

摘要： A method of the present invention includes the steps of forming an amorphous semiconductor layer on an insulative surface, adding a catalyst element capable of promoting crystallization to the amorphous semiconductor layer and then performing a first heat treatment so as to crystallize the amorphous semiconductor layer, thereby obtaining a crystalline semiconductor layer, performing a first gettering process to remove the catalyst element from the semiconductor layer, and performing a second gettering process that is different from the first gettering process to remove the catalyst element from the semiconductor layer. The first gettering process includes removing at least large masses of a semiconductor compound of the catalyst element present in the crystalline semiconductor layer. The second gettering process includes moving at least a portion of the catalyst element remaining in the crystalline semiconductor layer so as to form a low-catalyst-concentration region in the crystalline semiconductor layer, the low-catalyst-concentration region having a lower catalyst element concentration than in other regions.

摘要翻译： 本发明的方法包括以下步骤：在绝缘表面上形成非晶半导体层，向非晶半导体层添加能够促进结晶的催化剂元件，然后进行第一热处理以使非晶半导体层结晶，由此 获得晶体半导体层，执行第一吸气工艺以从半导体层去除催化剂元件，以及执行与第一吸气过程不同的第二吸气过程以从半导体层去除催化剂元件。 第一吸气方法包括除去至少大质量的结晶半导体层中存在的催化剂元素的半导体化合物。 第二吸气过程包括将至少一部分留在结晶半导体层中的催化剂元素移动以在结晶半导体层中形成低催化剂浓度区域，低催化剂浓度区域具有较低的催化剂元素浓度 比其他地区。

公开(公告)号：US5936291A

公开(公告)日：1999-08-10

申请号：US16337

申请日：1998-01-30

申请人： Naoki Makita ,  Muneyuki Motohashi ,  Hidehiko Yamashita ,  Hideo Izawa

发明人： Naoki Makita ,  Muneyuki Motohashi ,  Hidehiko Yamashita ,  Hideo Izawa

IPC分类号： H01L21/316 ,  H01L21/28 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/51 ,  H01L29/786 ,  H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113

CPC分类号： H01L21/28185 ,  H01L21/28158 ,  H01L21/28194 ,  H01L27/1214 ,  H01L29/51 ,  H01L29/513 ,  H01L29/66757 ,  H01L29/78603

摘要： The thin film transistor of this invention is formed on a substrate and includes an active layer and a first insulating film and a second insulating film sandwiching the active layer, wherein the overall polarity of fixed charges contained in the first insulating film is the reverse of the overall polarity of fixed charges contained in the second insulating film.

摘要翻译： 本发明的薄膜晶体管形成在基板上，包括有源层和第一绝缘膜以及夹持有源层的第二绝缘膜，其中包含在第一绝缘膜中的固定电荷的总极性与 包含在第二绝缘膜中的固定电荷的总极性。