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    Method of manufacturing transistor, method of manufacturing electro-optical device, and method of manufacturing electronic device
    2.
    发明授权
    Method of manufacturing transistor, method of manufacturing electro-optical device, and method of manufacturing electronic device 失效
    晶体管的制造方法，电光装置的制造方法以及电子装置的制造方法

    公开(公告)号：US07521299B2

    公开(公告)日：2009-04-21

    申请号：US11140748

    申请日：2005-06-01

    申请人： Hideki Tanaka ,  Takashi Masuda ,  Ichio Yudasaka ,  Takashi Aoki

    发明人： Hideki Tanaka ,  Takashi Masuda ,  Ichio Yudasaka ,  Takashi Aoki

    IPC分类号： H01L21/84

    CPC分类号： B82Y10/00 ,  B82Y30/00 ,  H01L27/1292 ,  H01L27/283 ,  H01L29/66757 ,  H01L51/0005 ,  H01L51/0022 ,  H01L51/0541

    摘要： A method of manufacturing a transistor includes disposing a droplet containing a bank material as a solute or a dispersoid on a substrate, drying the droplet to form a bank, ejecting a conductive material on a part of the bank to form a first conductive region and a second conductive region with the part of the bank interposed therebetween, removing the bank to form a groove between the first and second conductive regions, supplying a semiconductor material into the groove to form a semiconductor film, forming a gate insulating film on the semiconductor film, and forming a gate electrode at a position on the gate insulating film facing the semiconductor film.

    摘要翻译： 一种晶体管的制造方法，其特征在于，在基板上设置含有作为溶质或分散质的堤料的液滴，干燥所述液滴以形成堤，在所述堤的一部分上排出导电性物质，形成第一导电性区域和 第二导电区域，其中一部分插入其间，去除堤以在第一和第二导电区域之间形成沟槽，将半导体材料供应到沟槽中以形成半导体膜，在半导体膜上形成栅极绝缘膜， 以及在面对半导体膜的栅极绝缘膜上的位置处形成栅电极。

    METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
    7.
    发明申请
    METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE 有权
    制造碳化硅半导体器件的方法

    公开(公告)号：US20110256699A1

    公开(公告)日：2011-10-20

    申请号：US13142147

    申请日：2009-10-26

    申请人： Takashi Masuda

    发明人： Takashi Masuda

    IPC分类号： H01L21/283

    CPC分类号： H01L29/872 ,  H01L21/0485 ,  H01L21/0495 ,  H01L29/0619 ,  H01L29/1608 ,  H01L29/47 ,  H01L29/6606

    摘要： Provided is a method for manufacturing a silicon carbide semiconductor device which is capable of obtaining the silicon carbide semiconductor device having a high forward current and a low reverse leakage current by a simple method. The method for manufacturing a silicon carbide semiconductor device includes the steps of: forming a film made of a first electrode material on one surface of a silicon carbide substrate, and forming an ohmic electrode by performing heat treatment at a temperature range of 930 to 950° C.; and forming a film made of a second electrode material on the other surface of the silicon carbide substrate, and forming a Schottky electrode by performing heat treatment.

    摘要翻译： 提供一种能够通过简单的方法获得具有高正向电流和低反向泄漏电流的碳化硅半导体器件的制造碳化硅半导体器件的方法。 制造碳化硅半导体器件的方法包括以下步骤：在碳化硅衬底的一个表面上形成由第一电极材料制成的膜，并通过在930至950℃的温度范围内进行热处理形成欧姆电极 C。; 以及在所述碳化硅衬底的另一表面上形成由第二电极材料制成的膜，并通过进行热处理形成肖特基电极。

    IMAGE DISPLAY APPARATUS
    8.
    发明申请
    IMAGE DISPLAY APPARATUS 有权
    图像显示设备

    公开(公告)号：US20110144498A1

    公开(公告)日：2011-06-16

    申请号：US12958806

    申请日：2010-12-02

    申请人： Kouji Ando ,  Shouichi Nakauchi ,  Takeshi Sugio ,  Takashi Masuda

    发明人： Kouji Ando ,  Shouichi Nakauchi ,  Takeshi Sugio ,  Takashi Masuda

    IPC分类号： A61B8/14 ,  G09G5/00

    CPC分类号： A61B8/466 ,  A61B8/463 ,  A61B8/469 ,  A61B8/483 ,  G06T19/003 ,  G06T2210/41 ,  G06T2219/004 ,  G06T2219/028

    摘要： According to one embodiment, a medical image display apparatus includes a storage unit storing data of a three-dimensional image, a slice image generating unit generating three slice images associated with three slices from the three-dimensional image, a display unit displaying the three slice images respectively in three display areas, an ROI marker generating unit generating three ROI markers to be respectively superimposed on the displayed three slice images, the three ROI markers corresponding to a single ROI, an operation unit performing operation of changing relative positions between the three slice images and the three ROI markers, and a display control unit controlling move the three slice images in the three display areas in accordance with the operation of changing the relative positions and fix the three ROI markers at center positions of the three display areas.

    摘要翻译： 根据一个实施例，医疗图像显示装置包括存储三维图像数据的存储单元，从三维图像生成与三个切片相关联的三个切片图像的切片图像生成单元，显示三个切片 分别在三个显示区域中的ROI标记生成单元，生成分别叠加在显示的三个图像上的三个ROI标记，与单个ROI对应的三个ROI标记，操作单元，执行改变三个切片之间的相对位置的操作 图像和三个ROI标记，以及显示控制单元，根据改变相对位置的操作，将三个ROI标记固定在三个显示区域的中心位置，控制三个显示区域中的三个切片图像。

    Process for Producing Alpha-Fluoro-Beta-Amino Acids
    9.
    发明申请
    Process for Producing Alpha-Fluoro-Beta-Amino Acids 有权
    生产α-氟-β-氨基酸的方法

    公开(公告)号：US20110015428A1

    公开(公告)日：2011-01-20

    申请号：US12919108

    申请日：2009-04-21

    申请人： Akihiro Ishii ,  Takako Yamazaki ,  Manabu Yasumoto ,  Takashi Masuda ,  Hideyuki Tsuruta

    发明人： Akihiro Ishii ,  Takako Yamazaki ,  Manabu Yasumoto ,  Takashi Masuda ,  Hideyuki Tsuruta

    IPC分类号： C07C227/16

    CPC分类号： C07C227/16 ,  C07B55/00 ,  C07C227/32 ,  C07C229/20

    摘要： By reacting a β-hydroxy-α-amino acid with sulfuryl fluoride (SO2F2) in the presence of an organic base, it is possible to produce an α-fluoro-β-amino acid of the formula [2]. By using a C8-12 tertiary amine having two or more alkyl groups of C3 or higher, and especially diisopropylethylamine, as the organic base, by-production of quantery ammonium salts is effectively suppressed. By applying the production process of the present invention, it is possible to very easily produce (2R)-3-(dibenzylamino)-2-fluoropropionic acid methyl ester, which is extremely important as a pharmaceutical intermediate, with high positional selectivity even on an industrial scale.

    摘要翻译： 通过在有机碱的存在下使β-羟基-α-氨基酸与硫酰氟（SO2F2）反应，可以制备式[2]的α-氟 - 二 - 氨基酸。 通过使用具有两个以上具有3个以上的烷基的C8-12叔胺，特别是二异丙基乙胺作为有机碱，有效地抑制了副铵盐的副产物。 通过应用本发明的制备方法，可以非常容易地制备作为药物中间体极其重要的（2R）-3-（二苄基氨基）-2-氟丙酸甲酯，即使在 工业规模。