Delta-sigma A/D converter
    1.
    发明授权
    Delta-sigma A/D converter 失效
    Delta-sigma A / D转换器

    公开(公告)号:US08223050B2

    公开(公告)日:2012-07-17

    申请号:US12911345

    申请日:2010-10-25

    IPC分类号: H03M1/20

    摘要: In a delta-sigma A/D converter provided with plural channels for converting an analog input signal into a digital signal, an adverse influence of an idle tone is reduced in each channel. The delta-sigma A/D converter comprises: a first quantizer which quantizes and outputs a received signal; a first D/A converter which converts an output signal of the first quantizer into an analog signal, and outputs the converted analog signal; a first operation unit which outputs a signal indicative of a difference of the first analog input signal and an output signal of the first D/A converter; a first integrator which integrates an output signal of the first operation unit and outputs the integrated signal; a first dither circuit which generates a first dither signal; and a second operation unit which adds the first dither signal to the output signal of the first integrator and outputs the added signal to the first quantizer.

    摘要翻译: 在具有用于将模拟输入信号转换为数字信号的多个通道的Δ-ΣA / D转换器中,在每个通道中降低了空闲音调的不利影响。 Δ-ΣA / D转换器包括:量化并输出接收信号的第一量化器; 第一D / A转换器,其将第一量化器的输出信号转换为模拟信号,并输出转换的模拟信号; 第一操作单元,其输出表示第一模拟输入信号和第一D / A转换器的输出信号的差的信号; 第一积分器,其对第一运算单元的输出信号进行积分并输出积分信号; 产生第一抖动信号的第一抖动电路; 以及第二操作单元,其将第一抖动信号添加到第一积分器的输出信号,并将相加的信号输出到第一量化器。

    Delta-sigma A/D converter
    2.
    发明授权
    Delta-sigma A/D converter 有权
    Delta-sigma A / D转换器

    公开(公告)号:US09118341B2

    公开(公告)日:2015-08-25

    申请号:US13523592

    申请日:2012-06-14

    摘要: A delta-sigma A/D converter having plural input channels comprises a first quantizer which quantizes and outputs a received signal; a first D/A converter which converts an output signal of the first quantizer into an analog signal, and outputs the converted analog signal; a first operation unit which outputs a signal indicative of a difference of the first analog input signal and an output signal of the first D/A converter; a first integrator which integrates an output signal of the first operation unit and outputs the integrated signal; a first dither circuit which generates a first dither signal; and a second operation unit which adds the first dither signal to the output signal of the first integrator and outputs the added signal to the first quantizer.

    摘要翻译: 具有多个输入通道的Δ-ΣA / D转换器包括量化并输出接收信号的第一量化器; 第一D / A转换器,其将第一量化器的输出信号转换为模拟信号,并输出转换的模拟信号; 第一操作单元,其输出表示第一模拟输入信号和第一D / A转换器的输出信号的差的信号; 第一积分器,其对第一操作单元的输出信号进行积分并输出积分信号; 产生第一抖动信号的第一抖动电路; 以及第二操作单元,其将第一抖动信号添加到第一积分器的输出信号,并将相加的信号输出到第一量化器。

    DELTA-SIGMA A/D CONVERTER
    3.
    发明申请
    DELTA-SIGMA A/D CONVERTER 失效
    DELTA-SIGMA A / D转换器

    公开(公告)号:US20110095925A1

    公开(公告)日:2011-04-28

    申请号:US12911345

    申请日:2010-10-25

    IPC分类号: H03M3/00

    摘要: In a delta-sigma A/D converter provided with plural channels for converting an analog input signal into a digital signal, an adverse influence of an idle tone is reduced in each channel. The delta-sigma A/D converter comprises: a first quantizer which quantizes and outputs a received signal; a first D/A converter which converts an output signal of the first quantizer into an analog signal, and outputs the converted analog signal; a first operation unit which outputs a signal indicative of a difference of the first analog input signal and an output signal of the first D/A converter; a first integrator which integrates an output signal of the first operation unit and outputs the integrated signal; a first dither circuit which generates a first dither signal; and a second operation unit which adds the first dither signal to the output signal of the first integrator and outputs the added signal to the first quantizer.

    摘要翻译: 在具有用于将模拟输入信号转换为数字信号的多个通道的Δ-ΣA / D转换器中,在每个通道中降低了空闲音调的不利影响。 Δ-ΣA / D转换器包括:量化并输出接收信号的第一量化器; 第一D / A转换器,其将第一量化器的输出信号转换为模拟信号,并输出转换的模拟信号; 第一操作单元,其输出表示第一模拟输入信号和第一D / A转换器的输出信号的差的信号; 第一积分器,其对第一运算单元的输出信号进行积分并输出积分信号; 产生第一抖动信号的第一抖动电路; 以及第二操作单元,其将第一抖动信号添加到第一积分器的输出信号,并将相加的信号输出到第一量化器。

    Semiconductor device
    4.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号:US08188526B2

    公开(公告)日:2012-05-29

    申请号:US12958923

    申请日:2010-12-02

    IPC分类号: H01L27/08 H01L29/94

    摘要: It is an object of the present invention to surely protect a predetermined semiconductor element or a predetermined semiconductor element group in an analog block from a noise generated from a digital block. A semiconductor device according to the present invention includes a semiconductor substrate, a digital block to be a region in which a digital circuit is formed and an analog block to be a region in which an analog circuit is formed, arranged by separating an upper surface of the semiconductor substrate and a substrate potential fixing region provided on the semiconductor substrate so as to surround in a planar view the predetermined semiconductor element group in the analog block, and a pad connected to the substrate potential fixing region and receiving a predetermined potential from an external part.

    摘要翻译: 本发明的目的是确保将模拟块中的预定半导体元件或预定半导体元件组与数字块产生的噪声保护起来。 根据本发明的半导体器件包括半导体衬底,作为形成数字电路的区域的数字块和形成模拟电路的区域的模拟块,通过将模拟电路的上表面 半导体基板和设置在半导体基板上的基板电位固定区域,以在平面图中包围模拟块中的预定半导体元件组,以及连接到基板电位固定区域并从外部接收预定电位的焊盘 部分。

    Semiconductor device
    5.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号:US07915708B2

    公开(公告)日:2011-03-29

    申请号:US12485528

    申请日:2009-06-16

    IPC分类号: H01L29/00

    摘要: A semiconductor device includes a semiconductor substrate including a main surface; a plurality of first interconnections formed in a capacitance forming region defined on the main surface and extending in a predetermined direction; a plurality of second interconnections each adjacent to the first interconnection located at an edge of the capacitance forming region, extending in the predetermined direction, and having a fixed potential; and an insulating layer formed on the main surface and filling in between each of the first interconnections and between the first interconnection and the second interconnection adjacent to each other. The first interconnections and the second interconnections are located at substantially equal intervals in a plane parallel to the main surface, and located to align in a direction substantially perpendicular to the predetermined direction.

    摘要翻译: 半导体器件包括:包括主表面的半导体衬底; 多个第一互连形成在形成在主表面上并沿预定方向延伸的电容形成区域中; 多个第二互连,每个相邻于位于电容形成区域的边缘处的第一互连,沿预定方向延伸并具有固定电位; 以及绝缘层,形成在主表面上,并且填充在每个第一互连之间以及第一互连和第二互连之间相邻。 第一互连和第二互连在平行于主表面的平面中以基本相等的间隔定位,并且被定位成在基本上垂直于预定方向的方向上对齐。

    Semiconductor device
    6.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号:US07868413B2

    公开(公告)日:2011-01-11

    申请号:US12267166

    申请日:2008-11-07

    IPC分类号: H01L21/762

    摘要: It is an object of the present invention to surely protect a predetermined semiconductor element or a predetermined semiconductor element group in an analog block from a noise generated from a digital block. A semiconductor device according to the present invention includes a semiconductor substrate, a digital block to be a region in which a digital circuit is formed and an analog block to be a region in which an analog circuit is formed, arranged by separating an upper surface of the semiconductor substrate and a substrate potential fixing region provided on the semiconductor substrate so as to surround in a planar view the predetermined semiconductor element group in the analog block, and a pad connected to the substrate potential fixing region and receiving a predetermined potential from an external part.

    摘要翻译: 本发明的目的是确保将模拟块中的预定半导体元件或预定半导体元件组与数字块产生的噪声保护起来。 根据本发明的半导体器件包括半导体衬底,作为形成数字电路的区域的数字块和形成模拟电路的区域的模拟块,通过将模拟电路的上表面 半导体基板和设置在半导体基板上的基板电位固定区域,以在平面图中包围模拟块中的预定半导体元件组,以及连接到基板电位固定区域并从外部接收预定电位的焊盘 部分。

    Digital-to-analog converter
    7.
    发明授权
    Digital-to-analog converter 失效
    数模转换器

    公开(公告)号:US06703957B2

    公开(公告)日:2004-03-09

    申请号:US10143878

    申请日:2002-05-14

    IPC分类号: H03M166

    摘要: When forming PDM pulses by a D/A converter in accordance with digital signals, the D/A converter causes at least one of the rising stage and the falling stage of each of the PDM pulses to change stepwise. In addition, when forming PWM pulses by another D/A converter, the D/A converter causes at least one of the rising stage and the falling stage of each of the PWM pulses to change stepwise.

    摘要翻译: 当通过D / A转换器根据数字信号形成PDM脉冲时,D / A转换器使得每个PDM脉冲的上升沿和下降沿中的至少一个逐步改变。 此外,当由另一个D / A转换器形成PWM脉冲时,D / A转换器使每个PWM脉冲的上升沿和下降沿中的至少一个逐步改变。

    Digital &Dgr;&Sgr; modulator and D/A converter using the modulator
    8.
    发明授权
    Digital &Dgr;&Sgr; modulator and D/A converter using the modulator 失效
    数字DELTASIGMA调制器和使用调制器的D / A转换器

    公开(公告)号:US06538589B2

    公开(公告)日:2003-03-25

    申请号:US10136416

    申请日:2002-05-02

    IPC分类号: H03M300

    CPC分类号: H03M7/3006 H03M7/302

    摘要: A digital &Dgr;&Sgr; modulator comprises a first-stage 1-bit &Dgr;&Sgr; modulator provided with an 1-bit (1 is an arbitrary natural number) quantizer, for modulating digital data, a correction logic for multiplying a quantization error caused in the 1-bit quantizer by a correction so that the quantization error caused in the 1-bit quantizer is eliminated at an output of the first-stage 1-bit &Dgr;&Sgr; modulator, and a next-stage m-bit &Dgr;&Sgr; modulator provided with an m-bit (m is an arbitrary natural number larger than 1) quantizer, for modulating and feeding the quantization error which is multiplied by the correction by the correction logic back to the first-stage 1-bit &Dgr;&Sgr; modulator.

    摘要翻译: 一个数字DELTASIGMA调制器包括一个第一级1位DELTASIGMA调制器,它配备1位(1为任意自然数)量化器,用于调制数字数据;一个校正逻辑,用于将1位量化器中引起的量化误差相乘 通过校正,使得在第一级1位DELTASIGMA调制器的输出处消除在1位量化器中引起的量化误差,并且提供具有m位的下一级m位DELTASIGMA调制器(m是 大于1)量化器的任意自然数,用于将与校正逻辑的校正相乘的量化误差调制和馈送回到第一级1位DELTASIGMA调制器。

    Semiconductor device
    9.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号:US07557427B2

    公开(公告)日:2009-07-07

    申请号:US11845339

    申请日:2007-08-27

    IPC分类号: H01L51/05

    摘要: A semiconductor device includes a semiconductor substrate including a main surface; a plurality of first interconnections formed in a capacitance forming region defined on the main surface and extending in a predetermined direction; a plurality of second interconnections each adjacent to the first interconnection located at an edge of the capacitance forming region, extending in the predetermined direction, and having a fixed potential; and an insulating layer formed on the main surface and filling in between each of the first interconnections and between the first interconnection and the second interconnection adjacent to each other. The first interconnections and the second interconnections are located at substantially equal intervals in a plane parallel to the main surface, and located to align in a direction substantially perpendicular to the predetermined direction.

    摘要翻译: 半导体器件包括:包括主表面的半导体衬底; 多个第一互连形成在形成在主表面上并沿预定方向延伸的电容形成区域中; 多个第二互连,每个相邻于位于电容形成区域的边缘处的第一互连,沿预定方向延伸并具有固定电位; 以及绝缘层,形成在主表面上,并且填充在每个第一互连之间以及第一互连和第二互连之间相邻。 第一互连和第二互连在平行于主表面的平面中以基本相等的间隔定位,并且被定位成在基本上垂直于预定方向的方向上对齐。

    SEMICONDUCTOR DEVICE
    10.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号:US20070296059A1

    公开(公告)日:2007-12-27

    申请号:US11845339

    申请日:2007-08-27

    IPC分类号: H01L29/00

    摘要: A semiconductor device includes a semiconductor substrate including a main surface; a plurality of first interconnections formed in a capacitance forming region defined on the main surface and extending in a predetermined direction; a plurality of second interconnections each adjacent to the first interconnection located at an edge of the capacitance forming region, extending in the predetermined direction, and having a fixed potential; and an insulating layer formed on the main surface and filling in between each of the first interconnections and between the first interconnection and the second interconnection adjacent to each other. The first interconnections and the second interconnections are located at substantially equal intervals in a plane parallel to the main surface, and located to align in a direction substantially perpendicular to the predetermined direction.

    摘要翻译: 半导体器件包括:包括主表面的半导体衬底; 多个第一互连形成在形成在主表面上并沿预定方向延伸的电容形成区域中; 多个第二互连,每个相邻于位于电容形成区域的边缘处的第一互连,沿预定方向延伸并具有固定电位; 以及绝缘层,形成在主表面上,并且填充在每个第一互连之间以及第一互连和第二互连之间相邻。 第一互连和第二互连在平行于主表面的平面中以基本相等的间隔定位,并且被定位成在基本上垂直于预定方向的方向上对齐。