摘要:
In a delta-sigma A/D converter provided with plural channels for converting an analog input signal into a digital signal, an adverse influence of an idle tone is reduced in each channel. The delta-sigma A/D converter comprises: a first quantizer which quantizes and outputs a received signal; a first D/A converter which converts an output signal of the first quantizer into an analog signal, and outputs the converted analog signal; a first operation unit which outputs a signal indicative of a difference of the first analog input signal and an output signal of the first D/A converter; a first integrator which integrates an output signal of the first operation unit and outputs the integrated signal; a first dither circuit which generates a first dither signal; and a second operation unit which adds the first dither signal to the output signal of the first integrator and outputs the added signal to the first quantizer.
摘要:
A delta-sigma A/D converter having plural input channels comprises a first quantizer which quantizes and outputs a received signal; a first D/A converter which converts an output signal of the first quantizer into an analog signal, and outputs the converted analog signal; a first operation unit which outputs a signal indicative of a difference of the first analog input signal and an output signal of the first D/A converter; a first integrator which integrates an output signal of the first operation unit and outputs the integrated signal; a first dither circuit which generates a first dither signal; and a second operation unit which adds the first dither signal to the output signal of the first integrator and outputs the added signal to the first quantizer.
摘要:
In a delta-sigma A/D converter provided with plural channels for converting an analog input signal into a digital signal, an adverse influence of an idle tone is reduced in each channel. The delta-sigma A/D converter comprises: a first quantizer which quantizes and outputs a received signal; a first D/A converter which converts an output signal of the first quantizer into an analog signal, and outputs the converted analog signal; a first operation unit which outputs a signal indicative of a difference of the first analog input signal and an output signal of the first D/A converter; a first integrator which integrates an output signal of the first operation unit and outputs the integrated signal; a first dither circuit which generates a first dither signal; and a second operation unit which adds the first dither signal to the output signal of the first integrator and outputs the added signal to the first quantizer.
摘要:
It is an object of the present invention to surely protect a predetermined semiconductor element or a predetermined semiconductor element group in an analog block from a noise generated from a digital block. A semiconductor device according to the present invention includes a semiconductor substrate, a digital block to be a region in which a digital circuit is formed and an analog block to be a region in which an analog circuit is formed, arranged by separating an upper surface of the semiconductor substrate and a substrate potential fixing region provided on the semiconductor substrate so as to surround in a planar view the predetermined semiconductor element group in the analog block, and a pad connected to the substrate potential fixing region and receiving a predetermined potential from an external part.
摘要:
A semiconductor device includes a semiconductor substrate including a main surface; a plurality of first interconnections formed in a capacitance forming region defined on the main surface and extending in a predetermined direction; a plurality of second interconnections each adjacent to the first interconnection located at an edge of the capacitance forming region, extending in the predetermined direction, and having a fixed potential; and an insulating layer formed on the main surface and filling in between each of the first interconnections and between the first interconnection and the second interconnection adjacent to each other. The first interconnections and the second interconnections are located at substantially equal intervals in a plane parallel to the main surface, and located to align in a direction substantially perpendicular to the predetermined direction.
摘要:
It is an object of the present invention to surely protect a predetermined semiconductor element or a predetermined semiconductor element group in an analog block from a noise generated from a digital block. A semiconductor device according to the present invention includes a semiconductor substrate, a digital block to be a region in which a digital circuit is formed and an analog block to be a region in which an analog circuit is formed, arranged by separating an upper surface of the semiconductor substrate and a substrate potential fixing region provided on the semiconductor substrate so as to surround in a planar view the predetermined semiconductor element group in the analog block, and a pad connected to the substrate potential fixing region and receiving a predetermined potential from an external part.
摘要:
When forming PDM pulses by a D/A converter in accordance with digital signals, the D/A converter causes at least one of the rising stage and the falling stage of each of the PDM pulses to change stepwise. In addition, when forming PWM pulses by another D/A converter, the D/A converter causes at least one of the rising stage and the falling stage of each of the PWM pulses to change stepwise.
摘要:
A digital &Dgr;&Sgr; modulator comprises a first-stage 1-bit &Dgr;&Sgr; modulator provided with an 1-bit (1 is an arbitrary natural number) quantizer, for modulating digital data, a correction logic for multiplying a quantization error caused in the 1-bit quantizer by a correction so that the quantization error caused in the 1-bit quantizer is eliminated at an output of the first-stage 1-bit &Dgr;&Sgr; modulator, and a next-stage m-bit &Dgr;&Sgr; modulator provided with an m-bit (m is an arbitrary natural number larger than 1) quantizer, for modulating and feeding the quantization error which is multiplied by the correction by the correction logic back to the first-stage 1-bit &Dgr;&Sgr; modulator.
摘要:
A semiconductor device includes a semiconductor substrate including a main surface; a plurality of first interconnections formed in a capacitance forming region defined on the main surface and extending in a predetermined direction; a plurality of second interconnections each adjacent to the first interconnection located at an edge of the capacitance forming region, extending in the predetermined direction, and having a fixed potential; and an insulating layer formed on the main surface and filling in between each of the first interconnections and between the first interconnection and the second interconnection adjacent to each other. The first interconnections and the second interconnections are located at substantially equal intervals in a plane parallel to the main surface, and located to align in a direction substantially perpendicular to the predetermined direction.
摘要:
A semiconductor device includes a semiconductor substrate including a main surface; a plurality of first interconnections formed in a capacitance forming region defined on the main surface and extending in a predetermined direction; a plurality of second interconnections each adjacent to the first interconnection located at an edge of the capacitance forming region, extending in the predetermined direction, and having a fixed potential; and an insulating layer formed on the main surface and filling in between each of the first interconnections and between the first interconnection and the second interconnection adjacent to each other. The first interconnections and the second interconnections are located at substantially equal intervals in a plane parallel to the main surface, and located to align in a direction substantially perpendicular to the predetermined direction.