公开(公告)号：US08272256B2

公开(公告)日：2012-09-25

申请号：US12569939

申请日：2009-09-30

申请人： Takashi Mori ,  Takuya Mizuno ,  Toshiyuki Matsuoka ,  Yoshinori Tsujimura ,  Takio Kojima ,  Yuzo Higuchi

发明人： Takashi Mori ,  Takuya Mizuno ,  Toshiyuki Matsuoka ,  Yoshinori Tsujimura ,  Takio Kojima ,  Yuzo Higuchi

IPC分类号： G01M15/08

CPC分类号： G01L23/22 ,  G01L19/143 ,  G01L23/18

摘要： A pressure sensor has a Si device having a first main surface that has a bonded area, a second main surface parallel to the first main surface, a pressure-sensitive resistor formed on the first main surface, and a joining assist pattern formed on the first main surface, and a pressing member bonded to the bonded area on the first main surface and compressing the Si device in a thickness direction. The pressure-sensitive resistor has a first bonded section which is placed within the bonded area of the first main surface and is bonded to the pressing member. The joining assist pattern has a second bonded section which is made of the same material as the first bonded section of the pressure-sensitive resistor and is placed within the bonded area of the first main surface and is bonded to the pressing member.

摘要翻译： 压力传感器具有Si器件，其具有第一主表面，具有接合区域，平行于第一主表面的第二主表面，形成在第一主表面上的压敏电阻器，以及形成在第一主表面上的接合辅助图案 主表面和与第一主表面上的接合区域接合并且沿厚度方向压缩Si器件的按压部件。 压敏电阻器具有第一接合部，该第一接合部位于第一主面的接合区域内并且接合到按压部件。 接合辅助图案具有第二接合部，该第二接合部由与压敏电阻器的第一接合部相同的材料制成，并且被放置在第一主表面的接合区域内并且接合到按压部件。

公开(公告)号：US08410801B2

公开(公告)日：2013-04-02

申请号：US12569976

申请日：2009-09-30

申请人： Toshiyuki Matsuoka ,  Yuzo Higuchi ,  Yoshinori Tsujimura ,  Takio Kojima

发明人： Toshiyuki Matsuoka ,  Yuzo Higuchi ,  Yoshinori Tsujimura ,  Takio Kojima

IPC分类号： G01R27/08

CPC分类号： G01L23/18 ,  G01L9/065 ,  G01L23/22

摘要： A pressure detection apparatus has a pressure-sensitive resistor whose first resistance varies according to pressure and a change of its own temperature, a temperature-sensitive resistor which has a same resistance-temperature coefficient as the pressure-sensitive resistor and whose second resistance varies according to the change of the temperature, a current source supplying first and second constant-currents to the pressure-sensitive and temperature-sensitive resistors respectively, and a pressure signal generation output section. The current source adjusts the first and second constant-currents so that when the pressure is an initial pressure, a reference first voltage appearing across the pressure-sensitive resistor and a reference second voltage appearing across the temperature-sensitive resistor become equal to each other. The pressure signal generation output section outputs a first voltage signal corresponding to the pressure on the basis of a difference voltage between a first voltage of the pressure-sensitive resistor and a second voltage of the temperature-sensitive resistor.

摘要翻译： 压力检测装置具有压敏电阻器，其第一电阻根据压力和其自身温度的变化而变化，温度敏感电阻器具有与压敏电阻器相同的电阻温度系数，并且其第二电阻根据 对于温度的变化，分别向压敏电阻器和温度敏感电阻器提供第一和第二恒定电流的电流源以及压力信号产生输出部分。 电流源调节第一和第二恒定电流，使得当压力为初始压力时，跨压敏电阻器出现的参考第一电压和跨过温度敏感电阻器出现的基准第二电压变得彼此相等。 压力信号生成输出部根据压敏电阻的第一电压与感温电阻的第二电压之间的差分电压，输出与压力对应的第一电压信号。

公开(公告)号：US06805003B2

公开(公告)日：2004-10-19

申请号：US09962346

申请日：2001-09-26

申请人： Masatoshi Ueki ,  Takio Kojima ,  Yoshinori Tsujimura ,  Kouichi Ikawa ,  Yoshihiko Kohmura ,  Takafumi Oshima

发明人： Masatoshi Ueki ,  Takio Kojima ,  Yoshinori Tsujimura ,  Kouichi Ikawa ,  Yoshihiko Kohmura ,  Takafumi Oshima

IPC分类号： G01F168

CPC分类号： G01F1/6845

摘要： A mass flow sensor includes a semiconductor substrate 1, an insulating thin film 2, heaters 311 and 312, temperature measurement resistors 321 and 322, and a protective layer 4. The heaters 311 and 312 are formed on the surface of the insulating thin film 2, and are provided adjacently such that the heater 311 is provided upstream the heater 312 and the heater 312 is provided downstream the heater 311. A cavity 5 is formed below the heaters 311 and 312, and the heaters are thermally insulated from the remaining portion of the semiconductor substrate. The temperature measurement resistors 321 and 322 are formed on the top surface of the insulating thin film 2, and are provided at opposite sides of the heaters 311 and 312, such that the resistors are aligned with respect to the flow passage of a fluid. In the mass flow sensor and the mass flowmeter including the sensor, the flow rate and flow direction of a fluid can be detected by means of merely the heaters 311 and 312, which are active elements. Therefore, the sensor and the flowmeter exhibits high-speed response with respect to change in the flow rate of the fluid.

摘要翻译： 质量流量传感器包括半导体衬底1，绝缘薄膜2，加热器311和312，温度测量电阻321和322以及保护层4.加热器311和312形成在绝缘薄膜2的表面上 并且相邻地设置，使得加热器311设置在加热器312的上游，并且加热器312设置在加热器311的下游。空腔5形成在加热器311和312的下方，并且加热器与剩余部分 半导体衬底。 温度测量电阻器321和322形成在绝缘薄膜2的顶表面上，并且设置在加热器311和312的相对侧，使得电阻器相对于流体的流动通道对准。 在包括传感器的质量流量传感器和质量流量计中，流体的流速和流动方向可以仅通过作为有源元件的加热器311和312来检测。 因此，传感器和流量计相对于流体的流量变化表现出高速响应。

公开(公告)号：US20100147685A1

公开(公告)日：2010-06-17

申请号：US12527824

申请日：2008-12-12

申请人： Koichi Ikawa ,  Masahito Kida ,  Shinichiro Kito ,  Yoshinori Tsujimura ,  Takio Kojima

发明人： Koichi Ikawa ,  Masahito Kida ,  Shinichiro Kito ,  Yoshinori Tsujimura ,  Takio Kojima

IPC分类号： G01N27/26

CPC分类号： G01N27/128

摘要： Between a gas sensing layer (4) and a base member (15) composed of a silicon substrate (2) and an insulating coat layer (3), there is formed an adhesion layer 7, to improve the adhesion therebetween, and to prevent separation. The gas sensing layer (4) and sensing electrodes (6) are electrically connected by abutment of a confronting surface (61) of sensing electrodes (6) confronting the gas sensing layer (4) and sides surfaces of the sensing electrodes on both sides, on the gas sensing layer (4), and accordingly the gas sensor properly senses an electric characteristic of the gas sensing layer (4) varied in accordance with a concentration variation of a specified gas. Furthermore, the sensing electrodes (6) are in contact with the gas sensing layer (4), but the sensing electrodes are not in contact with the adhesion layer (7). Therefore, the adhesion layer (7) need not be a complete insulating layer, and it is possible to use, as the adhesion layer, an incomplete insulating film or a conductive film, so that options of the adhesion layer (7) are increased.

摘要翻译： 在气体感测层（4）和由硅衬底（2）和绝缘涂层（3）组成的基底构件（15）之间形成粘合层7，以改善它们之间的粘附性并防止分离 。 气体感测层（4）和感测电极（6）通过面对气体感测层（4）的感测电极（6）的相对表面（61）和两侧的感测电极的侧表面的邻接电连接， 在气体感测层（4）上，因此气体传感器适当地感测根据特定气体的浓度变化而变化的气体感测层（4）的电特性。 此外，感测电极（6）与气体感测层（4）接触，但感测电极不与粘附层（7）接触。 因此，粘合层（7）不需要是完整的绝缘层，并且可以使用不完全绝缘膜或导电膜作为粘合层，使得粘附层（7）的选项增加。

公开(公告)号：US08393196B2

公开(公告)日：2013-03-12

申请号：US12527824

申请日：2008-12-12

申请人： Koichi Ikawa ,  Masahito Kida ,  Shinichiro Kito ,  Yoshinori Tsujimura ,  Takio Kojima

发明人： Koichi Ikawa ,  Masahito Kida ,  Shinichiro Kito ,  Yoshinori Tsujimura ,  Takio Kojima

IPC分类号： G01N7/00

CPC分类号： G01N27/128

摘要： Between a gas sensing layer (4) and a base member (15) composed of a silicon substrate (2) and an insulating coat layer (3), there is formed an adhesion layer 7, to improve the adhesion therebetween, and to prevent separation. The gas sensing layer (4) and sensing electrodes (6) are electrically connected by abutment of a confronting surface (61) of sensing electrodes (6) confronting the gas sensing layer (4) and sides surfaces of the sensing electrodes on both sides, on the gas sensing layer (4), and accordingly the gas sensor properly senses an electric characteristic of the gas sensing layer (4) varied in accordance with a concentration variation of a specified gas. Furthermore, the sensing electrodes (6) are in contact with the gas sensing layer (4), but the sensing electrodes are not in contact with the adhesion layer (7). Therefore, the adhesion layer (7) need not be a complete insulating layer, and it is possible to use, as the adhesion layer, an incomplete insulating film or a conductive film, so that options of the adhesion layer (7) are increased.

摘要翻译： 在气体感测层（4）和由硅衬底（2）和绝缘涂层（3）组成的基底构件（15）之间形成粘合层7，以改善它们之间的粘附性并防止分离 。 气体感测层（4）和感测电极（6）通过面对气体感测层（4）的感测电极（6）的相对表面（61）和两侧的感测电极的侧表面的邻接电连接， 在气体感测层（4）上，因此气体传感器适当地感测根据特定气体的浓度变化而变化的气体感测层（4）的电特性。 此外，感测电极（6）与气体感测层（4）接触，但感测电极不与粘附层（7）接触。 因此，粘合层（7）不需要是完整的绝缘层，并且可以使用不完全绝缘膜或导电膜作为粘合层，使得粘附层（7）的选项增加。

公开(公告)号：US07487675B2

公开(公告)日：2009-02-10

申请号：US11347306

申请日：2006-02-06

申请人： Koichi Ikawa ,  Yoshinori Tsujimura ,  Takio Kojima

发明人： Koichi Ikawa ,  Yoshinori Tsujimura ,  Takio Kojima

IPC分类号： G01F1/692

CPC分类号： G01F1/6845 ,  H05B3/12 ,  H05B3/28 ,  H05B2203/013 ,  H05B2203/017

摘要： A micro-heater including a semiconductor substrate having a cavity; an insulating layer provided on an upper side of the semiconductor substrate and closing the cavity; and a heater element embedded in a portion of the insulating layer above the cavity and including a metallic material. The insulating layer includes: a compressive stress film made of silicon oxide; and a tensile stress film made of silicon nitride. The tensile stress film has a thickness not less than that of the compressive stress film.

摘要翻译： 一种微加热器，包括具有空腔的半导体衬底; 绝缘层，设置在所述半导体衬底的上侧并闭合所述腔; 以及加热器元件，其嵌入在所述空腔上方的绝缘层的一部分中并且包括金属材料。 绝缘层包括：由氧化硅制成的压应力膜; 和由氮化硅制成的拉伸应力膜。 拉伸应力膜的厚度不小于压缩应力膜的厚度。

公开(公告)号：US08413495B2

公开(公告)日：2013-04-09

申请号：US12734659

申请日：2008-07-29

申请人： Yuzo Higuchi ,  Yoshinori Tsujimura

发明人： Yuzo Higuchi ,  Yoshinori Tsujimura

IPC分类号： G01M15/04

CPC分类号： F02D35/023 ,  F02D41/107 ,  F02D41/2474 ,  F02D2041/281 ,  F02D2250/14 ,  F02P19/028 ,  G01L19/0092 ,  G01L23/18 ,  G01L23/225

摘要： An output correction apparatus that corrects offset drift of a cylinder internal pressure sensor, and a cylinder internal pressure detection apparatus that accurately detects cylinder internal pressure of an internal combustion engine through use of the output correction apparatus. The cylinder internal pressure detection apparatus includes a detection circuit section which detects a change in the resistance of a piezoresistor element as an electrical signal; an amplification circuit section which amplifies and outputs the electrical signal (output value); and a correction circuit section which corrects the output value. The correction circuit section includes a reset control section which resets the output value of the amplification circuit section to a reference value, and a reset timing detection section which determines a timing of the resetting.

摘要翻译： 一种用于校正气缸内部压力传感器的偏移漂移的输出校正装置和通过使用输出校正装置来精确地检测内燃机的气缸内部压力的气缸内部压力检测装置。 气缸内部压力检测装置包括：检测电阻部件，其检测作为电信号的压电电阻元件的电阻的变化; 放大并输出电信号（输出值）的放大电路部分; 以及校正电路部分，其校正输出值。 校正电路部分包括将放大电路部分的输出值复位为基准值的复位控制部分和确定复位定时的复位定时检测部分。

公开(公告)号：US20100229624A1

公开(公告)日：2010-09-16

申请号：US12734659

申请日：2008-07-29

申请人： Yuzo Higuchi ,  Yoshinori Tsujimura

发明人： Yuzo Higuchi ,  Yoshinori Tsujimura

IPC分类号： G01L27/00 ,  G01M15/08

CPC分类号： F02D35/023 ,  F02D41/107 ,  F02D41/2474 ,  F02D2041/281 ,  F02D2250/14 ,  F02P19/028 ,  G01L19/0092 ,  G01L23/18 ,  G01L23/225

摘要： An output correction apparatus that corrects offset drift of a cylinder internal pressure sensor, and a cylinder internal pressure detection apparatus that accurately detects cylinder internal pressure of an internal combustion engine through use of the output correction apparatus. The cylinder internal pressure detection apparatus includes a detection circuit section which detects a change in the resistance of a piezoresistor element as an electrical signal; an amplification circuit section which amplifies and outputs the electrical signal (output value); and a correction circuit section which corrects the output value. The correction circuit section includes a reset control section which resets the output value of the amplification circuit section to a reference value, and a reset timing detection section which determines a timing of the resetting.

摘要翻译： 一种用于校正气缸内部压力传感器的偏移漂移的输出校正装置和通过使用输出校正装置来精确地检测内燃机的气缸内部压力的气缸内部压力检测装置。 气缸内部压力检测装置包括：检测电阻部件，其检测作为电信号的压电电阻元件的电阻的变化; 放大并输出电信号（输出值）的放大电路部分; 以及校正电路部分，其校正输出值。 校正电路部分包括将放大电路部分的输出值复位为基准值的复位控制部分和确定复位定时的复位定时检测部分。

公开(公告)号：US5173876A

公开(公告)日：1992-12-22

申请号：US584673

申请日：1990-09-19

申请人： Hiromi Kawashima ,  Yoshinori Tsujimura

发明人： Hiromi Kawashima ,  Yoshinori Tsujimura

IPC分类号： G11C17/00 ,  G06F12/14 ,  G06F21/00 ,  G06F21/24 ,  G11C7/20 ,  G11C16/02 ,  G11C16/10 ,  G11C16/22 ,  G11C16/32

CPC分类号： G06F21/79 ,  G06F12/1433 ,  G11C16/10 ,  G11C16/22 ,  G11C16/32 ,  G11C16/3495 ,  G11C7/20

摘要： Where an electrically erasable and programmable non-volatile semiconductor memory element (EEPROM cell) for storing a setting and releasing of the software data protection has already been set in the logic state designating the software data protection setting state, and operation of setting the logical state designating the software data protection setting is not applied to the EEPROM cell even if the address and data for setting the software data protection is input. Further, where the logic state designating the releasing of the software data protection has been set in the electrically erasable and programmable non-volatile semiconductor memory element, the operation of setting the logical state designating the release of the software data protection is not set to the EEPROM cell, even if the address and the data for releasing the software data protection is input.