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公开(公告)号：US06214748B1
公开(公告)日：2001-04-10
申请号：US09086031
申请日：1998-05-28
IPC分类号： H01L2131
CPC分类号： H01L21/02134 , H01L21/0212 , H01L21/02126 , H01L21/02203 , H01L21/02282 , H01L21/02337 , H01L21/02351 , H01L21/312 , H01L21/31695 , H01L21/76801 , H01L21/76825 , H01L21/76828 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： This invention pertains to a method for forming thin films on substrates wherein the films are produced by applying a solution of an electrically insulating, heat-curing resin onto the substrate, evaporating the solvent and exposing the resin to high energy radiation to cure the resin. The resin solution contains a substance selected from solvents and gas generating additives that causes the dedensification of the film during the cure of the resin. This results in a film having a dielectric constant of below 2.7. This invention also pertains to a semiconductor device having an interconnect structure comprising at least one electrically conductive layer with an interposed insulating layer having a dielectric constant of less than 2.7 wherein the insulating layer is produced by the method of this invention.
摘要翻译： 本发明涉及在基板上形成薄膜的方法，其中通过将电绝缘的热固化树脂的溶液施加到基底上，蒸发溶剂并使树脂暴露于高能量辐射以固化树脂来制备薄膜。 树脂溶液含有选自溶剂和气体发生添加剂的物质，其在树脂固化期间引起薄膜的强化。 这导致介电常数低于2.7的膜。 本发明还涉及具有互连结构的半导体器件，该互连结构包括至少一个具有介电常数小于2.7的中间绝缘层的导电层，其中通过本发明的方法制造绝缘层。
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2.发明授权公开(公告)号：US06451381B2
公开(公告)日：2002-09-17
申请号：US09765196
申请日：2001-01-18
IPC分类号： C08G77455
CPC分类号： H01L21/02126 , G03F7/0757 , G03F7/0758 , H01L21/02216 , H01L21/02282 , H01L21/02351 , H01L21/3121 , H01L21/3122
摘要： An electrically insulating crosslinked thin-film-forming organic resin composition comprising (A) an electrically insulating organic resin having silicon atom-bonded hydrogen atoms or silicon atom-bonded alkenyl groups and (B) a solvent, and a method for forming a crosslinked thin film therefrom.
摘要翻译： 一种电绝缘交联薄膜形成有机树脂组合物，其包含（A）具有硅原子键合氢原子或硅原子键合的烯基的电绝缘有机树脂和（B）溶剂，以及形成交联薄膜 电影。
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公开(公告)号：US06191183B1
公开(公告)日：2001-02-20
申请号：US09412219
申请日：1999-10-05
IPC分类号： C08J328
CPC分类号： C09D183/04 , C08G77/12 , H01L21/316 , Y10T428/31663
摘要： The instant invention pertains to a composition that can form silica thin films, wherein said composition performs well as a substrate planarizing coating when applied to a substrate and can be converted by exposure to high-energy radiation into silica thin film with an excellent electrical insulating performance. The composition for the formation of silica thin films comprises (A) a hydrogen silsesquioxane resin that contains at least 45 weight % hydrogen silsesquioxane resin with a molecular weight no greater than 1,500; and (B) solvent. A silica thin film is produced by evaporating the solvent (B), and then converting at least a portion of the hydrogen silsesquioxane resin (A) to silica by exposing the surface of the said substrate to high-energy radiation. The preferred substrate is a semiconductor substrate having at least one electrically conductive layer.
摘要翻译： 本发明涉及可以形成二氧化硅薄膜的组合物，其中所述组合物在施加到基底上时作为基底平面化涂层表现良好，并且可以通过暴露于高能辐射而转化成具有优异电绝缘性能的二氧化硅薄膜 。 用于形成二氧化硅薄膜的组合物包括（A）含有至少45重量％的分子量不超过1500的氢倍半硅氧烷树脂的氢倍半硅氧烷树脂; 和（B）溶剂。 通过蒸发溶剂（B）制备二氧化硅薄膜，然后通过将所述基材的表面暴露于高能辐射而将至少一部分氢倍半硅氧烷树脂（A）转化为二氧化硅。 优选的衬底是具有至少一个导电层的半导体衬底。
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公开(公告)号：US6149966A
公开(公告)日：2000-11-21
申请号：US120384
申请日：1998-03-31
IPC分类号： C09D5/25 , C09D7/12 , C09D125/02 , C09D127/12 , C09D129/10 , C09D179/08 , C09D183/04 , C09D183/05 , C09D201/00 , H01B3/30 , H01B3/42 , H01B3/46 , H01L21/312 , H01L21/316 , B05D3/02 , B05D5/12
CPC分类号： H01L21/312 , C09D183/04 , H01B3/46
摘要： To provide a composition and process for forming insulating films that can produce insulating films having low dielectric constants. The composition comprises (A) an electrically insulating curable inorganic or organic resin, (B) a solvent, and (C) at least one solvent-soluble substance (excluding the solvent used for component (B)) that upon heating or by interaction with the resin (A) can generate gas or undergo volatilization in the temperature range from 0.degree. C. to 800.degree. C. The insulating films are prepared by coating the surface of a substrate the composition; evaporating the solvent; and subsequently heating the substrate in order to generate gas from component (C) during the course of or after the cure of the said resin (A).
摘要翻译： 提供一种用于形成可制造具有低介电常数的绝缘膜的绝缘膜的组合物和工艺。 组合物包含（A）电绝缘的可固化无机或有机树脂，（B）溶剂和（C）至少一种溶剂可溶物质（不包括用于组分（B）的溶剂）），其在加热时或通过与 树脂（A）可以在0℃至800℃的温度范围内产生气体或挥发。绝缘膜通过将基材的表面涂布在该组合物上而制备; 蒸发溶剂; 然后在所述树脂（A）的固化过程中或之后加热所述基材以便从组分（C）产生气体。
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公开(公告)号：US6074695A
公开(公告)日：2000-06-13
申请号：US52379
申请日：1998-03-31
IPC分类号： C09D5/25 , C09D7/12 , C09D125/02 , C09D127/12 , C09D129/10 , C09D179/08 , C09D183/04 , C09D183/05 , C09D201/00 , H01B3/30 , H01B3/42 , H01B3/46 , H01L21/312 , H01L21/316 , B05D5/00
CPC分类号： H01L21/312 , C09D183/04 , H01B3/46
摘要： To provide a composition for the formation of insulating films that can form an insulating film having a low dielectric constant. The composition comprises (A) an electrically insulating curable resin selected from the group consisting of electrically insulating curable organic resins and electrically insulating curable inorganic resins; and (B) at least two solvents: (B)(i) a solvent capable of dissolving resin (A) and (B)(ii) a solvent whose boiling point or vapor pressure curve differs from that of solvent (B)(i) or whose affinity for resin (A) differs from that of solvent (B)(i). Also claimed is a method for forming a insulating films that have a dielectric constant of less than 2.7.
摘要翻译： 提供用于形成可以形成具有低介电常数的绝缘膜的绝缘膜的组合物。 该组合物包含（A）选自电绝缘性可固化有机树脂和电绝缘可固化无机树脂的电绝缘可固化树脂; 和（B）至少两种溶剂：（B）（i）能够溶解树脂（A）和（B）的溶剂（ii）沸点或蒸气压曲线不同于溶剂（B）（i ）或其对树脂（A）的亲和力与溶剂（B）（i）的亲和性不同。 还要求保护的是形成介电常数小于2.7的绝缘膜的方法。
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公开(公告)号：US06448175B1
公开(公告)日：2002-09-10
申请号：US09656728
申请日：2000-09-07
IPC分类号： H01L214763
CPC分类号： H01L21/316
摘要： To provide a method for forming insulating thin films that can induce condensation of silanol and dehydration to a high degree at or near ambient pressure. An interlevel dielectric layer is formed on a semiconductor substrate by coating hydrogen silsesquioxane resin onto the substrate and curing the hydrogen silsesquioxane resin to produce an interlevel dielectric layer. This interlevel dielectric layer is then heated at a pressure from 1 to 1,000 torr at a temperature from 150 to 550° C.
摘要翻译： 提供一种形成绝缘薄膜的方法，该方法可以在环境压力或接近环境压力的情况下高度地引起硅烷醇的冷凝和脱水。通过将氢倍半硅氧烷树脂涂覆到基底上并固化氢倍半硅氧烷，形成在半导体衬底上的层间电介质层 树脂以产生层间介电层。 然后在150至550℃的温度下，将该层间电介质层在1至1000托的压力下加热。
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公开(公告)号：US06358804B2
公开(公告)日：2002-03-19
申请号：US09739610
申请日：2000-12-19
IPC分类号： H01L21336
CPC分类号： H01L21/02134 , H01L21/0212 , H01L21/02126 , H01L21/02203 , H01L21/02282 , H01L21/02337 , H01L21/02351 , H01L21/312 , H01L21/31695 , H01L21/76801 , H01L21/76825 , H01L21/76828 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： A method for forming thin films on substrates wherein the films are produced by applying a solution of an electrically insulating, heat-curing resin onto the substrate, evaporating the solvent and exposing the resin to high energy radiation to cure the resin. The resin solution contains a substance selected from solvents and gas generating additives that causes the dedensification of the film during the cure of the resin. This results in a film having a dielectric constant of below 2.7. A semiconductor device is also disclosed as having an interconnect structure including at least one electrically conductive layer with an interposed insulating layer having a dielectric constant of less than 2.7 wherein the insulating layer is produced by the method described above.
摘要翻译： 在基板上形成薄膜的方法，其中通过将电绝缘的热固化树脂的溶液施加到基板上，蒸发溶剂并将树脂暴露于高能辐射以固化树脂来制造薄膜。 树脂溶液含有选自溶剂和气体发生添加剂的物质，其在树脂固化期间引起薄膜的强化。 这导致介电常数低于2.7的膜。 半导体器件还被公开为具有互连结构，该互连结构包括具有介电常数小于2.7的中间绝缘层的至少一个导电层，其中绝缘层通过上述方法制造。
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8.发明授权公开(公告)号：US06764718B2
公开(公告)日：2004-07-20
申请号：US10315337
申请日：2002-12-09
IPC分类号： B05D302
CPC分类号： H01L21/02134 , H01B3/46 , H01L21/02282 , H01L21/3121 , H01L21/3122 , H01L21/3124 , Y10T428/31663
摘要： A method for forming an electrically insulating thin film coating the surface of an electronic device with an electrically insulating thin-film-forming resin composition and crosslinking the composition by a method selected from the group consisting of heating and irradiation with high-energy rays.
摘要翻译： 一种用电绝缘薄膜形成树脂组合物涂覆电子器件表面的电绝缘薄膜的方法，并通过选自加热和高能射线照射的方法交联该组合物。
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9.发明授权Electrically insulating thin-film-forming resin composition and method for forming thin film therefrom 失效电绝缘性薄膜形成用树脂组合物及其薄膜形成方法公开(公告)号：US06447846B2
公开(公告)日：2002-09-10
申请号：US09765204
申请日：2001-01-18
IPC分类号： B05D302
CPC分类号： H01L21/3124 , C09D183/04 , H01L21/02134 , H01L21/02282 , H01L21/02351 , Y10T428/31663 , Y10T428/31855 , C08L83/00 , C08L2666/04 , C08L2666/14
摘要： An electrically insulating thin-film-forming resin composition comprising (A) a hydrogen silsesquioxane resin, (B) a solvent-soluble polymer, and (C) a solvent; and a method for forming an electrically insulating thin film therefrom.
摘要翻译： 一种电绝缘薄膜形成树脂组合物，其包含（A）氢倍半硅氧烷树脂，（B）溶剂可溶性聚合物和（C）溶剂; 以及从其形成电绝缘薄膜的方法。
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公开(公告)号：US5372842A
公开(公告)日：1994-12-13
申请号：US146358
申请日：1993-10-29
IPC分类号： H01L21/316 , C03C17/27 , C04B41/50 , C04B41/87 , C09D183/05 , C23C18/12 , H01L21/312 , B05D5/12
CPC分类号： C04B41/87 , C03C17/27 , C04B41/009 , C04B41/5035 , C23C18/1204 , C23C18/1212 , C23C18/122 , C23C18/1275 , C23C18/1279 , C03C2217/213 , C03C2218/322 , C04B2111/00844
摘要： Disclosed is a method for the formation of a thick silicon oxide film which is insoluble in organic solvents and free of cracks and pinholes on the surface of a substrate. The method comprises forming a hydrogen silsesquioxane resin film on the surface of a substrate, converting the hydrogen silsesquioxane resin into preceramic silicon oxide by heating in an inert gas atmosphere, and converting the preceramic silicon oxide into silicon oxide ceramic by heating in an atmosphere selected from the group consisting of oxygen and oxygen mixed with an inert gas.
摘要翻译： 公开了一种形成厚的氧化硅膜的方法，其不溶于有机溶剂，并且在基板的表面上没有裂纹和针孔。 该方法包括在基板的表面上形成氢倍半硅氧烷树脂膜，在惰性气体气氛中加热，将氢倍半硅氧烷树脂转化为陶瓷氧化硅，并将该陶瓷氧化硅转化为氧化硅陶瓷， 由氧和氧组成的组与惰性气体混合。
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