公开(公告)号：US07981807B2

公开(公告)日：2011-07-19

申请号：US12051502

申请日：2008-03-19

申请人： Akira Suzuki ,  Takashi Noma ,  Hiroyuki Shinogi ,  Yukihiro Takao ,  Shinzo Ishibe ,  Shigeki Otsuka ,  Keiichi Yamaguchi

发明人： Akira Suzuki ,  Takashi Noma ,  Hiroyuki Shinogi ,  Yukihiro Takao ,  Shinzo Ishibe ,  Shigeki Otsuka ,  Keiichi Yamaguchi

IPC分类号： H01L21/302

CPC分类号： H01L21/78 ,  H01L23/3114 ,  H01L23/482 ,  H01L23/49827 ,  H01L2224/05001 ,  H01L2224/05023 ,  H01L2224/05568 ,  H01L2224/16 ,  H01L2224/274 ,  H01L2924/00014 ,  H01L2924/01057 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2224/05599 ,  H01L2224/05099

摘要： Cost is reduced and reliability is improved with a CSP type semiconductor device. A glass substrate which works as a supporting plate is bonded through an adhesive to a first surface of a semiconductor wafer on which first wirings are formed. Thickness of the semiconductor wafer is reduced by back-grinding the semiconductor wafer on a second surface of the semiconductor wafer which is opposite to the first surface of the semiconductor wafer. The semiconductor wafer is wet-etched to remove bumps and dips on the second surface of the semiconductor wafer caused during the back-grinding. Then the second surface of the semiconductor wafer is etched to form a tapered groove. The semiconductor wafer is wet-etched to reduce bumps and dips caused by the etching and round a corner of the groove. The wet-etching improves coverage of insulation film, wiring and protection film and enhances yield and reliability of the semiconductor device.

摘要翻译： CSP型半导体器件降低成本并提高可靠性。 作为支撑板的玻璃基板通过粘合剂粘合到其上形成有第一布线的半导体晶片的第一表面。 半导体晶片的厚度通过在与半导体晶片的第一表面相对的半导体晶片的第二表面上的背面研磨半导体晶片来减少。 湿式蚀刻半导体晶片以去除在后研磨期间引起的半导体晶片的第二表面上的凸起和凹陷。 然后蚀刻半导体晶片的第二表面以形成锥形槽。 湿式蚀刻半导体晶片以减少由蚀刻引起的凸起和凹陷，并且绕着凹槽的一角。 湿蚀刻提高了绝缘膜，布线和保护膜的覆盖率，并提高了半导体器件的产量和可靠性。

公开(公告)号：US07101735B2

公开(公告)日：2006-09-05

申请号：US10696581

申请日：2003-10-30

申请人： Takashi Noma ,  Hiroyuki Shinogi ,  Akira Suzuki ,  Yoshinori Seki ,  Koichi Kuhara ,  Yukihiro Takao ,  Hiroshi Yamada

发明人： Takashi Noma ,  Hiroyuki Shinogi ,  Akira Suzuki ,  Yoshinori Seki ,  Koichi Kuhara ,  Yukihiro Takao ,  Hiroshi Yamada

IPC分类号： H01L21/44

CPC分类号： H01L21/6835 ,  H01L21/76898 ,  H01L23/3114 ,  H01L23/3185 ,  H01L23/481 ,  H01L24/10 ,  H01L2221/6834 ,  H01L2221/68377 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05548 ,  H01L2224/05569 ,  H01L2224/16 ,  H01L2924/01019 ,  H01L2924/01057 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/1305 ,  H01L2924/00 ,  H01L2224/05644 ,  H01L2924/00014 ,  H01L2224/05655 ,  H01L2224/05124 ,  H01L2224/05147

摘要： A first glass substrate is bonded through a resin to a top surface of a semiconductor wafer on which a first wiring is formed. A second glass substrate is bonded to a back surface of the semiconductor wafer through a resin. A V-shaped groove is formed by notching from a surface of the second glass substrate through a part of the first glass substrate. A second wiring connected with the first wiring and extending to the surface of the second glass substrate is formed. A protection film composed of an organic resin and a photoresist layer to provide the protection film with an opening are formed on the second wiring by spray coating. A conductive terminal is formed by screen printing using the protection film as a solder mask. A cushioning material may be formed on the second glass substrate by spray coating.

摘要翻译： 将第一玻璃基板通过树脂粘合到其上形成有第一布线的半导体晶片的顶表面。 通过树脂将第二玻璃基板结合到半导体晶片的背面。 通过第一玻璃基板的一部分从第二玻璃基板的表面开槽而形成V形槽。 形成与第一布线连接并延伸到第二玻璃基板的表面的第二布线。 通过喷涂在第二布线上形成由有机树脂和光致抗蚀剂层组成的保护膜以提供具有开口的保护膜。 通过使用保护膜作为焊接掩模的丝网印刷形成导电端子。 可以通过喷涂在第二玻璃基板上形成缓冲材料。

公开(公告)号：US20050176235A1

公开(公告)日：2005-08-11

申请号：US11035399

申请日：2005-01-14

申请人： Takashi Noma ,  Hiroyuki Shinogi ,  Yukihiro Takao

发明人： Takashi Noma ,  Hiroyuki Shinogi ,  Yukihiro Takao

IPC分类号： H01L21/60 ,  H01L21/68 ,  H01L21/768 ,  H01L23/31 ,  H01L23/48 ,  H01L23/485 ,  H01L25/065 ,  H01L21/44

CPC分类号： H01L24/12 ,  H01L21/6836 ,  H01L21/76898 ,  H01L23/3114 ,  H01L23/481 ,  H01L24/02 ,  H01L24/11 ,  H01L24/16 ,  H01L25/0657 ,  H01L25/50 ,  H01L2221/68327 ,  H01L2224/0231 ,  H01L2224/0401 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/09701 ,  H01L2924/12044

摘要： A manufacturing method of a semiconductor device of this invention includes forming metal pads on a Si substrate through a first oxide film, bonding the Si substrate and a holding substrate which bolsters the Si substrate through a bonding film, forming an opening by etching the Si substrate followed by forming a second oxide film on a back surface of the Si substrate and in the opening, forming a wiring connected to the metal pads after etching the second oxide film, forming a conductive terminal on the wiring, dicing from the back surface of the Si substrate to the bonding film and separating the Si substrate and the holding substrate.

公开(公告)号：US20080171421A1

公开(公告)日：2008-07-17

申请号：US12051502

申请日：2008-03-19

申请人： Akira SUZUKI ,  Takashi Noma ,  Hiroyuki Shinogi ,  Yukihiro Takao ,  Shinzo Ishibe ,  Shigeki Otsuka ,  Keiichi Yamaguchi

发明人： Akira SUZUKI ,  Takashi Noma ,  Hiroyuki Shinogi ,  Yukihiro Takao ,  Shinzo Ishibe ,  Shigeki Otsuka ,  Keiichi Yamaguchi

IPC分类号： H01L21/304

CPC分类号： H01L21/78 ,  H01L23/3114 ,  H01L23/482 ,  H01L23/49827 ,  H01L2224/05001 ,  H01L2224/05023 ,  H01L2224/05568 ,  H01L2224/16 ,  H01L2224/274 ,  H01L2924/00014 ,  H01L2924/01057 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2224/05599 ,  H01L2224/05099

摘要： Cost is reduced and reliability is improved with a CSP type semiconductor device. A glass substrate which works as a supporting plate is bonded through an adhesive to a first surface of a semiconductor wafer on which first wirings are formed. Thickness of the semiconductor wafer is reduced by back-grinding the semiconductor wafer on a second surface of the semiconductor wafer which is opposite to the first surface of the semiconductor wafer. The semiconductor wafer is wet-etched to remove bumps and dips on the second surface of the semiconductor wafer caused during the back-grinding. Then the second surface of the semiconductor wafer is etched to form a tapered groove. The semiconductor wafer is wet-etched to reduce bumps and dips caused by the etching and round a corner of the groove. The wet-etching improves coverage of insulation film, wiring and protection film and enhances yield and reliability of the semiconductor device.

摘要翻译： CSP型半导体器件降低成本并提高可靠性。 作为支撑板的玻璃基板通过粘合剂粘合到其上形成有第一布线的半导体晶片的第一表面。 半导体晶片的厚度通过在与半导体晶片的第一表面相对的半导体晶片的第二表面上的背面研磨半导体晶片来减少。 湿式蚀刻半导体晶片以去除在后研磨期间引起的半导体晶片的第二表面上的凸起和凹陷。 然后蚀刻半导体晶片的第二表面以形成锥形槽。 湿式蚀刻半导体晶片以减少由蚀刻引起的凸起和凹陷，并且绕着凹槽的一角。 湿蚀刻提高了绝缘膜，布线和保护膜的覆盖率，并提高了半导体器件的产量和可靠性。

公开(公告)号：US07399683B2

公开(公告)日：2008-07-15

申请号：US11035399

申请日：2005-01-14

申请人： Takashi Noma ,  Hiroyuki Shinogi ,  Yukihiro Takao

发明人： Takashi Noma ,  Hiroyuki Shinogi ,  Yukihiro Takao

IPC分类号： H01L21/00

CPC分类号： H01L24/12 ,  H01L21/6836 ,  H01L21/76898 ,  H01L23/3114 ,  H01L23/481 ,  H01L24/02 ,  H01L24/11 ,  H01L24/16 ,  H01L25/0657 ,  H01L25/50 ,  H01L2221/68327 ,  H01L2224/0231 ,  H01L2224/0401 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/09701 ,  H01L2924/12044

摘要： A manufacturing method of a semiconductor device of this invention includes forming metal pads on a Si substrate through a first oxide film, bonding the Si substrate and a holding substrate which bolsters the Si substrate through a bonding film, forming an opening by etching the Si substrate followed by forming a second oxide film on a back surface of the Si substrate and in the opening, forming a wiring connected to the metal pads after etching the second oxide film, forming a conductive terminal on the wiring, dicing from the back surface of the Si substrate to the bonding film and separating the Si substrate and the holding substrate.

摘要翻译： 本发明的半导体器件的制造方法包括通过第一氧化膜在Si衬底上形成金属焊盘，将Si衬底和支撑衬底接合，通过接合膜固定Si衬底，通过蚀刻Si衬底形成开口 然后在Si衬底的后表面和开口中形成第二氧化物膜，在蚀刻第二氧化膜之后形成连接到金属焊盘的布线，在布线上形成导电端子，从导电端子的背面切割 Si衬底到所述接合膜并分离所述Si衬底和所述保持衬底。

公开(公告)号：US07371693B2

公开(公告)日：2008-05-13

申请号：US10784888

申请日：2004-02-24

申请人： Akira Suzuki ,  Takashi Noma ,  Hiroyuki Shinogi ,  Yukihiro Takao ,  Shinzo Ishibe ,  Shigeki Otsuka ,  Keiichi Yamaguchi

发明人： Akira Suzuki ,  Takashi Noma ,  Hiroyuki Shinogi ,  Yukihiro Takao ,  Shinzo Ishibe ,  Shigeki Otsuka ,  Keiichi Yamaguchi

IPC分类号： H01L21/461

CPC分类号： H01L21/78 ,  H01L23/3114 ,  H01L23/482 ,  H01L23/49827 ,  H01L2224/05001 ,  H01L2224/05023 ,  H01L2224/05568 ,  H01L2224/16 ,  H01L2224/274 ,  H01L2924/00014 ,  H01L2924/01057 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2224/05599 ,  H01L2224/05099

摘要： Cost is reduced and reliability is improved with a CSP type semiconductor device. A glass substrate which works as a supporting plate is bonded through an adhesive to a first surface of a semiconductor wafer on which first wirings are formed. Thickness of the semiconductor wafer is reduced by back-grinding the semiconductor wafer on a second surface of the semiconductor wafer which is opposite to the first surface of the semiconductor wafer. The semiconductor wafer is wet-etched to remove bumps and dips on the second surface of the semiconductor wafer caused during the back-grinding. Then the second surface of the semiconductor wafer is etched to form a tapered groove. The semiconductor wafer is wet-etched to reduce bumps and dips caused by the etching and round a corner of the groove. The wet-etching improves coverage of insulation film, wiring and protection film and enhances yield and reliability of the semiconductor device.

摘要翻译： CSP型半导体器件降低成本并提高可靠性。 作为支撑板的玻璃基板通过粘合剂粘合到其上形成有第一布线的半导体晶片的第一表面。 半导体晶片的厚度通过在与半导体晶片的第一表面相对的半导体晶片的第二表面上的背面研磨半导体晶片来减少。 湿式蚀刻半导体晶片以去除在后研磨期间引起的半导体晶片的第二表面上的凸起和凹陷。 然后蚀刻半导体晶片的第二表面以形成锥形槽。 湿式蚀刻半导体晶片以减少由蚀刻引起的凸起和凹陷，并且绕着凹槽的一角。 湿蚀刻提高了绝缘膜，布线和保护膜的覆盖率，并提高了半导体器件的产量和可靠性。

公开(公告)号：US20080265424A1

公开(公告)日：2008-10-30

申请号：US12133171

申请日：2008-06-04

申请人： Takashi NOMA ,  Hiroyuki Shinogi ,  Yukihiro Takao

发明人： Takashi NOMA ,  Hiroyuki Shinogi ,  Yukihiro Takao

IPC分类号： H01L23/488

CPC分类号： H01L21/6836 ,  H01L21/76898 ,  H01L23/3114 ,  H01L23/481 ,  H01L24/02 ,  H01L24/11 ,  H01L24/12 ,  H01L25/0657 ,  H01L25/50 ,  H01L2221/68327 ,  H01L2224/0231 ,  H01L2224/02371 ,  H01L2224/0401 ,  H01L2224/05548 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/13025 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/09701 ,  H01L2924/15788 ,  H01L2924/00

摘要： A manufacturing method of a semiconductor device of this invention includes forming metal pads on a Si substrate through a first oxide film, bonding the Si substrate and a holding substrate which bolsters the Si substrate through a bonding film, forming an opening by etching the Si substrate followed by forming a second oxide film on a back surface of the Si substrate and in the opening, forming a wiring connected to the metal pads after etching the second oxide film, forming a conductive terminal on the wiring, dicing from the back surface of the Si substrate to the bonding film and separating the Si substrate and the holding substrate.

摘要翻译： 本发明的半导体器件的制造方法包括通过第一氧化膜在Si衬底上形成金属焊盘，将Si衬底和支撑衬底接合，通过接合膜固定Si衬底，通过蚀刻Si衬底形成开口 然后在Si衬底的后表面和开口中形成第二氧化物膜，在蚀刻第二氧化膜之后形成连接到金属焊盘的布线，在布线上形成导电端子，从导电端子的背面切割 Si衬底到所述接合膜并分离所述Si衬底和所述保持衬底。

公开(公告)号：US20070026639A1

公开(公告)日：2007-02-01

申请号：US11488890

申请日：2006-07-19

申请人： Takashi Noma ,  Hiroyuki Shinogi ,  Akira Suzuki ,  Yoshinori Seki ,  Koichi Kuhara ,  Yukihiro Takao ,  Hiroshi Yamada

发明人： Takashi Noma ,  Hiroyuki Shinogi ,  Akira Suzuki ,  Yoshinori Seki ,  Koichi Kuhara ,  Yukihiro Takao ,  Hiroshi Yamada

IPC分类号： H01L21/44

CPC分类号： H01L21/6835 ,  H01L21/76898 ,  H01L23/3114 ,  H01L23/3185 ,  H01L23/481 ,  H01L24/10 ,  H01L2221/6834 ,  H01L2221/68377 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05548 ,  H01L2224/05569 ,  H01L2224/16 ,  H01L2924/01019 ,  H01L2924/01057 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/1305 ,  H01L2924/00 ,  H01L2224/05644 ,  H01L2924/00014 ,  H01L2224/05655 ,  H01L2224/05124 ,  H01L2224/05147

摘要： A glass substrate is bonded through a resin to the top surface of a semiconductor wafer on which a first wiring is formed. A V-shaped groove is formed by notching from the back surface of the wafer. A second wiring connected with the first wiring and extending over the back surface of the wafer is formed. A protection film composed of an organic resin or a photoresist layer to provide protection with an opening is formed on the second wiring by spray coating. A conductive terminal is formed by screen printing using the protection film as a solder mask. A cushioning material may be formed on the back surface of the wafer by spray coating.

摘要翻译： 玻璃基板通过树脂粘合到其上形成有第一布线的半导体晶片的顶表面。 通过从晶片的背面开槽而形成V形槽。 形成与第一布线连接并在晶片的背面延伸的第二布线。 通过喷涂在第二布线上形成由有机树脂或光致抗蚀剂层组成的保护膜以提供开口的保护。 通过使用保护膜作为焊接掩模的丝网印刷形成导电端子。 可以通过喷涂在晶片的背面上形成缓冲材料。

公开(公告)号：US06864172B2

公开(公告)日：2005-03-08

申请号：US10462829

申请日：2003-06-17

申请人： Takashi Noma ,  Hiroyuki Shinogi ,  Yukihiro Takao

发明人： Takashi Noma ,  Hiroyuki Shinogi ,  Yukihiro Takao

IPC分类号： H01L23/12 ,  H01L21/60 ,  H01L21/68 ,  H01L21/768 ,  H01L23/31 ,  H01L23/48 ,  H01L23/485 ,  H01L25/065 ,  H01L21/44 ,  H01L21/8238

CPC分类号： H01L21/6836 ,  H01L21/76898 ,  H01L23/3114 ,  H01L23/481 ,  H01L24/02 ,  H01L24/11 ,  H01L24/12 ,  H01L25/0657 ,  H01L25/50 ,  H01L2221/68327 ,  H01L2224/0231 ,  H01L2224/02371 ,  H01L2224/0401 ,  H01L2224/05548 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/13025 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/09701 ,  H01L2924/15788 ,  H01L2924/00

摘要： A manufacturing method of a semiconductor device of this invention includes forming metal pads on a Si substrate through a first oxide film, bonding the Si substrate and a holding substrate which bolsters the Si substrate through a bonding film, forming an opening by etching the Si substrate followed by forming a second oxide film on a back surface of the Si substrate and in the opening, forming a wiring connected to the metal pads after etching the second oxide film, forming a conductive terminal on the wiring, dicing from the back surface of the Si substrate to the bonding film and separating the Si substrate and the holding substrate.

摘要翻译： 本发明的半导体器件的制造方法包括通过第一氧化膜在Si衬底上形成金属焊盘，将Si衬底和支撑衬底接合，通过接合膜固定Si衬底，通过蚀刻Si衬底形成开口 然后在Si衬底的后表面和开口中形成第二氧化物膜，在蚀刻第二氧化膜之后形成连接到金属焊盘的布线，在布线上形成导电端子，从导电端子的背面切割 Si衬底到所述接合膜并分离所述Si衬底和所述保持衬底。

公开(公告)号：US07719102B2

公开(公告)日：2010-05-18

申请号：US12133171

申请日：2008-06-04

申请人： Takashi Noma ,  Hiroyuki Shinogi ,  Yukihiro Takao

发明人： Takashi Noma ,  Hiroyuki Shinogi ,  Yukihiro Takao

IPC分类号： H01L23/40

CPC分类号： H01L21/6836 ,  H01L21/76898 ,  H01L23/3114 ,  H01L23/481 ,  H01L24/02 ,  H01L24/11 ,  H01L24/12 ,  H01L25/0657 ,  H01L25/50 ,  H01L2221/68327 ,  H01L2224/0231 ,  H01L2224/02371 ,  H01L2224/0401 ,  H01L2224/05548 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/13025 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/09701 ,  H01L2924/15788 ,  H01L2924/00

摘要： A manufacturing method of a semiconductor device of this invention includes forming metal pads on a Si substrate through a first oxide film, bonding the Si substrate and a holding substrate which bolsters the Si substrate through a bonding film, forming an opening by etching the Si substrate followed by forming a second oxide film on a back surface of the Si substrate and in the opening, forming a wiring connected to the metal pads after etching the second oxide film, forming a conductive terminal on the wiring, dicing from the back surface of the Si substrate to the bonding film and separating the Si substrate and the holding substrate.

摘要翻译： 本发明的半导体器件的制造方法包括通过第一氧化膜在Si衬底上形成金属焊盘，将Si衬底和支撑衬底接合，通过接合膜固定Si衬底，通过蚀刻Si衬底形成开口 然后在Si衬底的后表面和开口中形成第二氧化物膜，在蚀刻第二氧化膜之后形成连接到金属焊盘的布线，在布线上形成导电端子，从导电端子的背面切割 Si衬底到所述接合膜并分离所述Si衬底和所述保持衬底。