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    Semiconductor device and method of fabricating the same
    3.
    发明授权
    Semiconductor device and method of fabricating the same 有权
    半导体装置及其制造方法

    公开(公告)号：US08354715B2

    公开(公告)日：2013-01-15

    申请号：US12873749

    申请日：2010-09-01

    申请人： Hiroshi Kono ,  Takashi Shinohe

    发明人： Hiroshi Kono ,  Takashi Shinohe

    IPC分类号： H01L29/76 ,  H01L29/94

    CPC分类号： H01L21/04 ,  H01L29/0619 ,  H01L29/0834 ,  H01L29/0839 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/7395 ,  H01L29/7802

    摘要： According to the embodiments, a semiconductor device using SiC and having a high breakdown voltage, a low on-resistance, and excellent reliability is provided. The semiconductor device includes a silicon carbide substrate having first and second main surfaces; a first silicon carbide layer of a first conductive type provided on the first main surface of the silicon carbide substrate; first silicon carbide regions of a second conductive type formed on a surface of the first silicon carbide layer; second silicon carbide regions of the first conductive type formed on respective surfaces of the first silicon carbide regions; third silicon carbide regions of the second conductive type formed on the respective surfaces of the first silicon carbide regions; a fourth silicon carbide region of the second conductive type formed between the facing first silicon carbide regions with the first silicon carbide layer therebetween; a gate insulating film formed continuously on surfaces of the first silicon carbide regions, the first silicon carbide layer, and the fourth silicon carbide region; a gate electrode formed on the gate insulating film; an interlayer insulating film which covers the gate electrode; a first electrode which is electrically connected to the second silicon carbide regions and the third silicon carbide regions; and a second electrode formed on the second main surface of the silicon carbide substrate.

    摘要翻译： 根据实施例，提供了使用SiC并具有高击穿电压，低导通电阻和优异的可靠性的半导体器件。 半导体器件包括具有第一和第二主表面的碳化硅衬底; 设置在所述碳化硅衬底的所述第一主表面上的第一导电类型的第一碳化硅层; 形成在第一碳化硅层的表面上的第二导电类型的第一碳化硅区域; 形成在第一碳化硅区域的各个表面上的第一导电类型的第二碳化硅区域; 形成在第一碳化硅区域的各个表面上的第二导电类型的第三碳化硅区域; 形成在面对的第一碳化硅区域之间的第二导电类型的第四碳化硅区域，其间具有第一碳化硅层; 在第一碳化硅区域，第一碳化硅层和第四碳化硅区域的表面上连续形成的栅极绝缘膜; 形成在栅极绝缘膜上的栅电极; 覆盖栅电极的层间绝缘膜; 电连接到第二碳化硅区域和第三碳化硅区域的第一电极; 以及形成在碳化硅衬底的第二主表面上的第二电极。

    SEMICONDUCTOR DEVICE
    4.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20120056195A1

    公开(公告)日：2012-03-08

    申请号：US13034264

    申请日：2011-02-24

    申请人： Hiroshi Kono ,  Takashi Shinohe ,  Chiharu Ota ,  Makoto Mizukami ,  Takuma Suzuki ,  Johji Nishio

    发明人： Hiroshi Kono ,  Takashi Shinohe ,  Chiharu Ota ,  Makoto Mizukami ,  Takuma Suzuki ,  Johji Nishio

    IPC分类号： H01L29/161

    CPC分类号： H01L29/7395 ,  H01L29/1033 ,  H01L29/66333

    摘要： One embodiment of a semiconductor device includes: a silicon carbide substrate including first and second principal surfaces; a first-conductive-type silicon carbide layer on the first principal surface; a second-conductive-type first silicon carbide region at a surface of the first silicon carbide layer; a first-conductive-type second silicon carbide region at the surface of the first silicon carbide region; a second-conductive-type third silicon carbide region at the surface of the first silicon carbide region; a second-conductive-type fourth silicon carbide region formed between the first silicon carbide region and the second silicon carbide region, and having an impurity concentration higher than that of the first silicon carbide region; a gate insulator; a gate electrode formed on the gate insulator; an inter-layer insulator; a first electrode connected to the second silicon carbide region and the third silicon carbide region; and a second electrode on the second principal surface.

    摘要翻译： 半导体器件的一个实施例包括：包含第一和第二主表面的碳化硅衬底; 第一主表面上的第一导电型碳化硅层; 在所述第一碳化硅层的表面处的第二导电型第一碳化硅区域; 在第一碳化硅区域的表面处的第一导电型第二碳化硅区域; 在第一碳化硅区域的表面处的第二导电型第三碳化硅区域; 在第一碳化硅区域和第二碳化硅区域之间形成的杂质浓度高于第一碳化硅区域的第二导电型第四碳化硅区域; 栅极绝缘体; 形成在栅绝缘体上的栅电极; 层间绝缘体; 连接到所述第二碳化硅区域和所述第三碳化硅区域的第一电极; 和在第二主表面上的第二电极。

    METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
    5.
    发明申请
    METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
    制造半导体器件的方法

    公开(公告)号：US20110059597A1

    公开(公告)日：2011-03-10

    申请号：US12716403

    申请日：2010-03-03

    申请人： Johji Nishio ,  Chiharu Ota ,  Takuma Suzuki ,  Hiroshi Kono ,  Makoto Mizukami ,  Takashi Shinohe

    发明人： Johji Nishio ,  Chiharu Ota ,  Takuma Suzuki ,  Hiroshi Kono ,  Makoto Mizukami ,  Takashi Shinohe

    IPC分类号： H01L21/20

    CPC分类号： H01L29/7802 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/02658 ,  H01L21/0495 ,  H01L21/30604 ,  H01L29/0878 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/66143 ,  H01L29/872 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method of manufacturing a semiconductor device capable of realizing a high yield of a large-scale semiconductor device even when a silicon carbide semiconductor including a defect is used is provided. The method of manufacturing a semiconductor device includes: a step of epitaxially growing a silicon carbide semiconductor layer on a silicon carbide semiconductor substrate; a step of polishing a surface of the silicon carbide semiconductor layer; a step of ion-implanting impurities into the silicon carbide semiconductor layer after the step of polishing; a step of performing heat treatment to activate the impurities; a step of forming a first thermal oxide film on the surface of the silicon carbide semiconductor layer after the step of performing heat treatment; a step of chemically removing the first thermal oxide film; and a step of forming an electrode layer on the silicon carbide semiconductor film.

    摘要翻译： 提供了即使当使用包括缺陷的碳化硅半导体时也能够实现大规模半导体器件的高产率的半导体器件的制造方法。 制造半导体器件的方法包括：在碳化硅半导体衬底上外延生长碳化硅半导体层的步骤; 抛光所述碳化硅半导体层的表面的步骤; 在抛光步骤之后将杂质离子注入到碳化硅半导体层中的步骤; 进行热处理以活化杂质的步骤; 在进行热处理的步骤之后，在碳化硅半导体层的表面上形成第一热氧化膜的工序; 化学去除第一热氧化膜的步骤; 以及在所述碳化硅半导体膜上形成电极层的步骤。

    Silicon carbide semiconductor device
    7.
    发明授权
    Silicon carbide semiconductor device 有权
    碳化硅半导体器件

    公开(公告)号：US08686436B2

    公开(公告)日：2014-04-01

    申请号：US13600532

    申请日：2012-08-31

    申请人： Hiroshi Kono ,  Takashi Shinohe ,  Takuma Suzuki ,  Johji Nishio

    发明人： Hiroshi Kono ,  Takashi Shinohe ,  Takuma Suzuki ,  Johji Nishio

    IPC分类号： H01L29/16

    CPC分类号： H01L29/1608 ,  H01L29/0696 ,  H01L29/086 ,  H01L29/1045 ,  H01L29/1095 ,  H01L29/7395 ,  H01L29/7802

    摘要： According to one embodiment, a semiconductor device includes a first semiconductor region, a second semiconductor region, a third semiconductor region, a fourth semiconductor region, an insulating film, a control electrode, a first electrode, and a second electrode. The first semiconductor region includes silicon carbide, and has a first portion. The second semiconductor region is provided on the first semiconductor region, and includes silicon carbide. The third semiconductor region and the fourth semiconductor region are provided on the second semiconductor region, and includes silicon carbide. The electrode is provided on the film. The second semiconductor region has a first region and a second region. The first region contacts with the third semiconductor region and the fourth semiconductor region. The second region contacts with the first portion. The impurity concentration of the first region is higher than an impurity concentration of the second region.

    摘要翻译： 根据一个实施例，半导体器件包括第一半导体区域，第二半导体区域，第三半导体区域，第四半导体区域，绝缘膜，控制电极，第一电极和第二电极。 第一半导体区域包括碳化硅，并且具有第一部分。 第二半导体区域设置在第一半导体区域上，并且包括碳化硅。 第三半导体区域和第四半导体区域设置在第二半导体区域上，并且包括碳化硅。 电极设在膜上。 第二半导体区域具有第一区域和第二区域。 第一区域与第三半导体区域和第四半导体区域接触。 第二区域与第一部分接触。 第一区域的杂质浓度高于第二区域的杂质浓度。

    Vehicle control device
    9.
    发明授权
    Vehicle control device 有权
    车辆控制装置

    公开(公告)号：US08155852B2

    公开(公告)日：2012-04-10

    申请号：US12095406

    申请日：2006-12-21

    申请人： Toru Takenaka ,  Takayuki Toyoshima ,  Hiroyuki Urabe ,  Hiroshi Kono

    发明人： Toru Takenaka ,  Takayuki Toyoshima ,  Hiroyuki Urabe ,  Hiroshi Kono

    IPC分类号： G06F19/00 ,  G06F7/70 ,  B60T8/24 ,  B60T8/1761 ,  B60T8/1764

    CPC分类号： B60T8/17552 ,  B60T2230/02 ,  B60W10/04 ,  B60W10/10 ,  B60W10/184 ,  B60W10/20 ,  B60W50/06 ,  B60W2050/0012 ,  B60W2050/0028 ,  B60W2050/0033 ,  B60W2050/0034 ,  B60Y2200/12

    摘要： A driving/braking force manipulation control input of a k-th wheel, which denotes one or more specific wheels among a plurality of wheels of a vehicle, is determined such that a required condition concerning a relationship among a road surface reaction force that may act from a road surface on the k-th wheel on the basis of the detected values or estimated values of a side slip angle and a friction characteristic of the k-th wheel, a feedback control input related to the driving/braking force of the k-th wheel for bringing a difference between a state amount of the vehicle and a reference state amount close to zero, a driving/braking force feedforward control input based on a drive manipulated variable supplied by a driver of the vehicle, and a k-th wheel driving/braking force manipulation control input is satisfied. This arrangement makes it possible to properly control a motion of an actual vehicle to a desired motion while properly considering the characteristics of a road surface reaction force acting from a road surface on a wheel.

    摘要翻译： 确定表示车辆的多个车轮中的一个以上的特定车轮的第k个车轮的驾驶/制动力操纵控制输入，使得能够起作用的路面反作用力之间的关系的要求条件 基于第k轮的侧滑角和摩擦特性的检测值或估计值从第k轮的路面，与k的驱动/制动力相关的反馈控制输入 用于使车辆的状态量与接近零的基准状态量之间的差异，基于由车辆的驾驶员提供的驱动操作量的驱动/制动力前馈控制输入和第k 轮驱动/制动力操纵控制输入被满足。 这种布置使得可以适当地考虑从车轮上的路面起作用的路面反作用力的特性来适当地控制实际车辆的运动到期望的运动。

    Vehicle control device
    10.
    发明授权
    Vehicle control device 有权
    车辆控制装置

    公开(公告)号：US08024091B2

    公开(公告)日：2011-09-20

    申请号：US12095397

    申请日：2006-12-21

    申请人： Toru Takenaka ,  Takayuki Toyoshima ,  Hiroyuki Urabe ,  Hiroshi Kono

    发明人： Toru Takenaka ,  Takayuki Toyoshima ,  Hiroyuki Urabe ,  Hiroshi Kono

    IPC分类号： B60T8/58

    CPC分类号： B62D6/003 ,  B60T8/1755 ,  B60T2270/86 ,  B60W10/04 ,  B60W10/10 ,  B60W10/18 ,  B60W50/06 ,  B60W2050/0028 ,  B60W2050/0033 ,  B60W2050/0034 ,  B60Y2200/12

    摘要： An FB distribution rule 20 determines an actual vehicle actuator operation control input and a vehicle model operation control input such that a difference between a reference state amount determined by a vehicle model 16 and an actual state amount of an actual vehicle 1 (a state amount error) approximates to zero, and the control inputs are used to operate an actuator device 3 of the actual vehicle 1 and the vehicle model 16. In the FB distribution law 20, when an actual vehicle feedback required amount based on the state amount error exists in a dead zone, then an actual vehicle actuator operation control input is determined by using the required amount as a predetermined value. A vehicle model manipulated variable control input is determined such that a state amount error is brought close to zero, independently of whether an actual vehicle feedback required amount exists in a dead zone. This enhances linearity of a control system and also enhances the robustness against disturbance factors or changes therein while carrying out operation control of an actuator that suits a behavior of an actual vehicle as much as possible.

    摘要翻译： FB分配规则20确定实际车辆致动器操作控制输入和车辆模型操作控制输入，使得由车辆型号16确定的基准状态量与实际车辆1的实际状态量之间的差（状态量误差 ）近似为零，并且控制输入用于操作实际车辆1和车辆模型16的致动器装置3.在FB分配规则20中，当基于状态量误差的实际车辆反馈所需量存在于 死区，则通过使用所需量作为预定值来确定实际车辆致动器操作控制输入。 确定车辆模型操纵变量控制输入，使得状态量误差接近于零，而与在死区中是否存在实际车辆反馈需求量无关。 这提高了控制系统的线性度，并且在尽可能地执行适合实际车辆的行为的致动器的操作控制的同时，增强了抗干扰因素或其变化的鲁棒性。