公开(公告)号：US07988784B2

公开(公告)日：2011-08-02

申请号：US12804521

申请日：2010-07-23

申请人： Takayuki Hirao ,  Katsuhiro Imai ,  Mikiya Ichimura

发明人： Takayuki Hirao ,  Katsuhiro Imai ,  Mikiya Ichimura

IPC分类号： C30B19/12

CPC分类号： C30B29/403 ,  C30B19/12

摘要： It is used a substrate main body 1 having a side face 1b and a pair of main faces 1a and an underlying film 2 of a single crystal of a nitride of a metal belonging to the group III formed at least on one main face of the substrate main body 1. A single crystal 3 of a nitride of a metal belonging to the group III is grown on the main face 1a of the substrate main body 1 by a liquid phase process. The underlying film 2 has a shape of a convex figure in a plan view. A surface 4 without the underlying film thereon surrounds the entire circumference of the underlying film 2. The single crystal 3 of a nitride of a metal belonging to the group III grown on the underlying film 2 is not brought into contact with a single crystal of a nitride of a metal belonging to group III formed on another underlying film.

摘要翻译： 使用基板主体1，该基板主体1具有侧面1b和一对主面1a和属于组III的金属的氮化物的单晶的基底膜，所述III族金属的氮化物形成在基板的至少一个主面上 主体1.通过液相处理，在基板主体1的主面1a上生长属于III族的金属的氮化物的单晶3。 下面的薄膜2在平面图中具有凸形的形状。 没有其下面的膜的表面4围绕下面的膜2的整个圆周。属于在下面的膜2上生长的III族金属的氮化物的单晶3不与单晶 属于第III组的金属的氮化物，形成在另一底层膜上。

公开(公告)号：US20100307404A1

公开(公告)日：2010-12-09

申请号：US12804521

申请日：2010-07-23

申请人： Takayuki Hirao ,  Katsuhiro Imai ,  Mikiya Ichimura

发明人： Takayuki Hirao ,  Katsuhiro Imai ,  Mikiya Ichimura

IPC分类号： C30B19/12

CPC分类号： C30B29/403 ,  C30B19/12

摘要： It is used a substrate main body 1 having a side face 1b and a pair of main faces 1a and an underlying film 2 of a single crystal of a nitride of a metal belonging to the group III formed at least on one main face of the substrate main body 1. A single crystal 3 of a nitride of a metal belonging to the group III is grown on the main face 1a of the substrate main body 1 by a liquid phase process. The underlying film 2 has a shape of a convex figure in a plan view. A surface 4 without the underlying film thereon surrounds the entire circumference of the underlying film 2 The single crystal 3 of a nitride of a metal belonging to the group III grown on the underlying film 2 is not brought into contact with a single crystal of a nitride of a metal belonging to group III formed on another underlying film.

摘要翻译： 使用基板主体1，该基板主体1具有侧面1b和一对主面1a和属于组III的金属的氮化物的单晶的基底膜，所述III族金属的氮化物形成在基板的至少一个主面上 主体1.通过液相处理，在基板主体1的主面1a上生长属于III族的金属的氮化物的单晶3。 下面的薄膜2在平面图中具有凸形的形状。 没有其下面的膜的表面4围绕下面的膜2的整个圆周。属于在下面的膜2上生长的III族金属的氮化物的单晶3不与氮化物的单晶接触 属于第III组的金属，形成于另一底层薄膜上。

公开(公告)号：US08025728B2

公开(公告)日：2011-09-27

申请号：US12284470

申请日：2008-09-22

申请人： Mikiya Ichimura ,  Katsuhiro Imai ,  Chikashi Ihara ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

发明人： Mikiya Ichimura ,  Katsuhiro Imai ,  Chikashi Ihara ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

IPC分类号： C30B29/38

CPC分类号： C30B9/00 ,  C30B29/403 ,  C30B29/406

摘要： A seed crystal is immersed in a melt containing a flux and a single crystal material in a growth vessel to produce a nitride single crystal on the seed crystal. A difference (TS-TB) of temperatures at a gas-liquid interface of the melt (TS) and at the lowermost part of the melt (TB) is set to 1° C. or larger and 8° C. or lower. Preferably, the substrate of seed crystal is vertically placed.

摘要翻译： 在生长容器中将晶种浸入含有助熔剂和单晶材料的熔体中，以在籽晶上产生氮化物单晶。 在熔体（TS）和熔体（TB）的最下部分的气 - 液界面处的温度差（TS-TB）设定为1℃或更大和8℃或更低。 优选地，将晶种的衬底垂直放置。

公开(公告)号：US08506705B2

公开(公告)日：2013-08-13

申请号：US12556015

申请日：2009-09-09

申请人： Mikiya Ichimura ,  Katsuhiro Imai ,  Makoto Iwai ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura ,  Yasuo Kitaoka

发明人： Mikiya Ichimura ,  Katsuhiro Imai ,  Makoto Iwai ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura ,  Yasuo Kitaoka

IPC分类号： C30B9/00

CPC分类号： C30B29/406 ,  C30B19/02 ,  C30B19/062 ,  C30B19/08 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/0254 ,  H01L21/02625

摘要： A nitride single crystal is produced on a seed crystal substrate 5 in a melt containing a flux and a raw material of the single crystal in a growing vessel 1. The melt 2 in the growing vessel 1 has temperature gradient in a horizontal direction. In growing a nitride single crystal by flux method, adhesion of inferior crystals onto the single crystal is prevented and the film thickness of the single crystal is made constant.

摘要翻译： 氮化物单晶在生长容器1中含有熔剂和单晶原料的熔融物中在籽晶衬底5上产生。生长容器1中的熔体2在水平方向上具有温度梯度。 在通过助熔剂法生长氮化物单晶时，防止了将劣质晶体粘附到单晶上，使单晶的膜厚保持恒定。

公开(公告)号：US20090095212A1

公开(公告)日：2009-04-16

申请号：US12284470

申请日：2008-09-22

申请人： Mikiya Ichimura ,  Katsuhiro Imai ,  Chikashi Ihara ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

发明人： Mikiya Ichimura ,  Katsuhiro Imai ,  Chikashi Ihara ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

IPC分类号： C30B7/00

CPC分类号： C30B9/00 ,  C30B29/403 ,  C30B29/406

摘要： A seed crystal 9 is immersed in a melt 10 containing a flux and a single crystal material in a growth vessel 7 to produce a nitride single crystal 8 on the seed crystal 9. A difference (TS−TB) of temperatures at a gas-liquid interface of the melt (TS) and at the lowermost part of the melt (TB) is set to 1° C. or larger and 8° C. or lower. Preferably, the substrate of seed crystal is vertically placed.

摘要翻译： 将晶种9浸入生长容器7中含有助熔剂和单晶材料的熔体10中，以在晶种9上产生氮化物单晶8.气液中的温度差（TS-TB） 熔体（TS）和熔体（TB）的最下部的界面设定为1℃以上8℃以下。 优选地，将晶种的衬底垂直放置。

公开(公告)号：US07670430B2

公开(公告)日：2010-03-02

申请号：US12221642

申请日：2008-08-05

申请人： Mikiya Ichimura ,  Katsuhiro Imai

发明人： Mikiya Ichimura ,  Katsuhiro Imai

IPC分类号： C30B9/00 ,  C30B17/00

CPC分类号： C30B9/10 ,  C22B3/22 ,  C22B7/003 ,  C22B7/004 ,  C22B26/10 ,  C30B29/403 ,  C30B29/406 ,  Y02P10/234

摘要： It is provided a method for gently and safely recovering only sodium metal from a flux containing sodium metal in a short time and in a reusable form. Flux 23 is heated in a medium 19 unreactive with sodium metal 22 at a temperature equal to or higher than the melting point of sodium metal to separate and recover the sodium metal 22 from the flux 23. The medium is a hydrocarbon, for example.

摘要翻译： 提供了一种在短时间内和以可重复使用的形式从含金属钠的助熔剂中轻轻且安全地回收钠金属的方法。 助熔剂23在介质19中以等于或高于金属钠熔点的温度与金属钠22反应而加热，以分离​​和回收来自助熔剂23的金属钠。介质是例如烃。

公开(公告)号：US20100012020A1

公开(公告)日：2010-01-21

申请号：US12556015

申请日：2009-09-09

申请人： Mikiya Ichimura ,  Katsuhiro Imai ,  Makoto Iwai ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura ,  Yasuo Kitaoka

发明人： Mikiya Ichimura ,  Katsuhiro Imai ,  Makoto Iwai ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura ,  Yasuo Kitaoka

IPC分类号： C30B9/00

CPC分类号： C30B29/406 ,  C30B19/02 ,  C30B19/062 ,  C30B19/08 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/0254 ,  H01L21/02625

摘要： A nitride single crystal is produced on a seed crystal substrate 5 in a melt containing a flux and a raw material of the single crystal in a growing vessel 1. The melt 2 in the growing vessel 1 has temperature gradient in a horizontal direction. In growing a nitride single crystal by flux method, adhesion of inferior crystals onto the single crystal is prevented and the film thickness of the single crystal is made constant.

摘要翻译： 氮化物单晶在生长容器1中含有熔剂和单晶原料的熔融物中在籽晶衬底5上产生。生长容器1中的熔体2在水平方向上具有温度梯度。 在通过助熔剂法生长氮化物单晶时，防止了将劣质晶体粘附到单晶上，使单晶的膜厚保持恒定。

公开(公告)号：US20080302297A1

公开(公告)日：2008-12-11

申请号：US12221642

申请日：2008-08-05

申请人： Mikiya Ichimura ,  Katsuhiro Imai

发明人： Mikiya Ichimura ,  Katsuhiro Imai

IPC分类号： C30B9/00 ,  C22B26/10

CPC分类号： C30B9/10 ,  C22B3/22 ,  C22B7/003 ,  C22B7/004 ,  C22B26/10 ,  C30B29/403 ,  C30B29/406 ,  Y02P10/234

摘要： It is provided a method for gently and safely recovering only sodium metal from a flux containing sodium metal in a short time and in a reusable form. Flux 23 is heated in a medium 19 unreactive with sodium metal 22 at a temperature equal to or higher than the melting point of sodium metal to separate and recover the sodium metal 22 from the flux 23. The medium is a hydrocarbon, for example.

摘要翻译： 提供了一种在短时间内和以可重复使用的形式从含金属钠的助熔剂中轻轻且安全地回收钠金属的方法。 助熔剂23在介质19中以等于或高于金属钠熔点的温度与金属钠22反应而加热，以分离​​和回收来自助熔剂23的金属钠。介质是例如烃。

公开(公告)号：US09677192B2

公开(公告)日：2017-06-13

申请号：US13135829

申请日：2011-07-15

申请人： Takanao Shimodaira ,  Katsuhiro Imai ,  Makoto Iwai ,  Takayuki Hirao

发明人： Takanao Shimodaira ,  Katsuhiro Imai ,  Makoto Iwai ,  Takayuki Hirao

IPC分类号： C30B9/12 ,  C30B29/40

CPC分类号： C30B9/12 ,  C30B29/403 ,  C30B29/406

摘要： A group 13 nitride crystal substrate according to the present invention is produced by growing a group 13 nitride crystal on a seed-crystal substrate by a flux method, wherein a content of inclusions in the group 13 nitride crystal grown in a region of the seed-crystal substrate except for a circumferential portion of the seed-crystal substrate, the region having an area fraction of 70% relative to an entire area of the seed-crystal substrate, is 10% or less, preferably 2% or less.

公开(公告)号：US09290861B2

公开(公告)日：2016-03-22

申请号：US13496982

申请日：2010-10-15

申请人： Takayuki Hirao ,  Takanao Shimodaira ,  Katsuhiro Imai

发明人： Takayuki Hirao ,  Takanao Shimodaira ,  Katsuhiro Imai

IPC分类号： C30B29/40 ,  C30B33/08 ,  H01L21/02

CPC分类号： C30B29/406 ,  C30B33/08 ,  H01L21/02389 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/0254

摘要： Regarding a base substrate, a plurality of steps are formed stepwise on the principal surface (c-face). Each step has a height difference of 10 to 40 μm, and an edge is formed parallel to an a-face of a hexagonal crystal of GaN. Meanwhile, the terrace width of each step is set at a predetermined width. The predetermined width is set in such a way that after a GaN crystal is grown on the principal surface of the base substrate, the principal surface is covered up with grain boundaries when the grown GaN crystal is observed from the surface side. The plurality of steps can be formed through, for example, dry etching, sand blasting, lasing, and dicing.

摘要翻译： 关于基底，在主表面（c面）上逐步形成多个台阶。 每个步骤具有10至40μm的高差，并且与GaN的六方晶的a面平行地形成边缘。 同时，将各台阶的台阶宽度设定为规定的宽度。 预定宽度被设置为在GaN基晶体在基底基板的主表面上生长之后，当从表面侧观察生长的GaN晶体时，主表面被晶界覆盖。 可以通过例如干蚀刻，喷砂，激光和切割来形成多个步骤。