公开(公告)号：US6001729A

公开(公告)日：1999-12-14

申请号：US134372

申请日：1998-08-14

申请人： Hiroshi Shinriki ,  Takayuki Komiya ,  Hiroshi Yamamoto

发明人： Hiroshi Shinriki ,  Takayuki Komiya ,  Hiroshi Yamamoto

IPC分类号： H01L21/285 ,  H01L21/768 ,  H01L23/532 ,  H01L29/45 ,  H01L21/4763

CPC分类号： H01L21/76864 ,  H01L21/28518 ,  H01L21/76838 ,  H01L21/76841 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/76859 ,  H01L23/53271 ,  H01L29/456 ,  H01L2924/0002

摘要： A semiconductor device with a contact structure includes a silicon substrate, a diffusion region formed in a surface of the silicon substrate, a silicide film of a high melting point metal deposited on the diffusion region, an insulating film formed on the silicon substrate, a contact hole formed in the insulating film such that the silicide film is exposed at a bottom of the contact hole, an anti-diffusion film formed on at least the exposed surface of the silicide film at the bottom of the contact film, a plug formed in the contact hole by selective Al-CVD, and a metal wiring formed on the insulating film. The metal wiring is electrically connected to the diffusion region by the plug, the anti-diffusion film and the silicide film. The anti-diffusion film is formed by nitriding the surface of the silicide film such that only the grain boundaries of the grains of the silicide film are nitrided.

摘要翻译： 具有接触结构的半导体器件包括硅衬底，形成在硅衬底的表面中的扩散区，沉积在扩散区上的高熔点金属的硅化物膜，形成在硅衬底上的绝缘膜， 形成在绝缘膜上的硅，使得硅化物膜在接触孔的底部露出，至少形成在接触膜底部的硅化物膜的暴露表面上的防扩散膜，形成在 通过选择性Al-CVD的接触孔和形成在绝缘膜上的金属布线。 金属布线通过插头，防扩散膜和硅化物膜电连接到扩散区。 通过对硅化物膜的表面进行氮化而形成防扩散膜，使得只有硅化物膜的晶粒的晶界被氮化。

公开(公告)号：US20060099348A1

公开(公告)日：2006-05-11

申请号：US11249390

申请日：2005-10-14

申请人： Masaki Narushima ,  Koumei Matsuzawa ,  Takayuki Komiya ,  Eiichi Kondoh

发明人： Masaki Narushima ,  Koumei Matsuzawa ,  Takayuki Komiya ,  Eiichi Kondoh

IPC分类号： C23C16/00

CPC分类号： C23C18/08

摘要： A deposition method for depositing on a substrate includes the step of: using a process medium made by adding a precursor to a medium in a supercritical state. The precursor is added to the medium in the supercritical state where the precursor is dissolved in an organic solvent.

摘要翻译： 用于沉积在衬底上的沉积方法包括以下步骤：使用通过在超临界状态下将前体添加到介质中制备的处理介质。 将前体加入超临界状态的介质中，其中前体溶于有机溶剂中。

公开(公告)号：US20050158477A1

公开(公告)日：2005-07-21

申请号：US11017848

申请日：2004-12-22

申请人： Vincent Vezin ,  Kenichi Kubo ,  Takayuki Komiya ,  Eiichi Kondoh

发明人： Vincent Vezin ,  Kenichi Kubo ,  Takayuki Komiya ,  Eiichi Kondoh

IPC分类号： C23C16/455 ,  B05C11/00 ,  C23C4/12 ,  C23C16/00 ,  C23C26/00 ,  C23C26/02 ,  H01L21/285 ,  H01L21/288 ,  H01L21/768

CPC分类号： H01L21/76877 ,  C23C4/123 ,  C23C26/00 ,  C23C26/02 ,  H01L21/28556 ,  H01L21/288 ,  H01L21/76843

摘要： A deposition apparatus for supplying a process medium including a medium in a supercritical state and a precursor to a processed substrate so that the processed substrate is deposited on, includes a process vessel, a support stand which is provided in the process vessel, is configured to support the processed substrate, and include a heating part, a medium supply part which is connected to the process vessel via a medium supply path and supplies the process medium to the process vessel, and a medium reflux path configured to reflux the process medium supplied to the process vessel to the medium supply part. The medium supply part includes a first temperature control part configured to control a temperature of the process medium.

摘要翻译： 一种沉积设备，用于将包括处于超临界状态的介质和处理过的衬底的前体的处理介质供应到处理过的衬底沉积在其上，包括处理容器，设置在处理容器中的支撑架， 支撑经处理的基板，并且包括加热部分，介质供应部分，其通过介质供应路径连接到处理容器，并将处理介质供应到处理容器;以及介质回流路径，被配置为回流供给到 过程容器到介质供应部分。 介质供给部包括构造成控制处理介质的温度的第一温度控制部。

公开(公告)号：US5834846A

公开(公告)日：1998-11-10

申请号：US518322

申请日：1995-08-23

申请人： Hiroshi Shinriki ,  Takayuki Komiya ,  Hiroshi Yamamoto

发明人： Hiroshi Shinriki ,  Takayuki Komiya ,  Hiroshi Yamamoto

IPC分类号： H01L21/28 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/485 ,  H01L23/52 ,  H01L23/522 ,  H01L23/532 ,  H01L29/45 ,  H01L23/48 ,  H01L29/40

CPC分类号： H01L23/485 ,  H01L21/28518 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/76879 ,  H01L23/53271 ,  H01L29/456 ,  H01L2924/0002

摘要： A semiconductor device with a contact structure includes a silicon substrate, a diffusion region formed in a surface of the silicon substrate, a silicide film of a high melting point metal deposited on the diffusion region, an insulating film formed on the silicon substrate, a contact hole formed in the insulating film such that the silicide film is exposed at a bottom of the contact hole, an anti-diffusion film formed on at least the exposed surface of the silicide film at the bottom of the contact film, a plug formed in the contact hole by selective Al--CVD, and a metal wiring formed on the insulating film. The metal wiring is electrically connected to the diffusion region by the plug, the anti-diffusion film and the silicide film. The anti-diffusion film is formed by nitriding the surface of the silicide film such that only the grain boundaries of the grains of the silicide film are nitrided.

摘要翻译： 具有接触结构的半导体器件包括硅衬底，形成在硅衬底的表面中的扩散区，沉积在扩散区上的高熔点金属的硅化物膜，形成在硅衬底上的绝缘膜， 形成在绝缘膜上的硅，使得硅化物膜在接触孔的底部露出，至少形成在接触膜底部的硅化物膜的暴露表面上的防扩散膜，形成在 通过选择性Al-CVD的接触孔和形成在绝缘膜上的金属布线。 金属布线通过插头，防扩散膜和硅化物膜电连接到扩散区。 通过对硅化物膜的表面进行氮化而形成防扩散膜，使得只有硅化物膜的晶粒的晶界被氮化。

公开(公告)号：US20060174835A1

公开(公告)日：2006-08-10

申请号：US11346301

申请日：2006-02-03

申请人： Misako Saito ,  Teruyuki Hayashi ,  Takayuki Komiya

发明人： Misako Saito ,  Teruyuki Hayashi ,  Takayuki Komiya

IPC分类号： C23C16/00

CPC分类号： C23C16/4401 ,  H01L21/67069

摘要： A vacuum processing system includes a process chamber configured to accommodate a target object and perform a process thereon under a vacuum environment. The process chamber is provided with an exhaust system and a gas supply system. An ion generator configured to generate minus ions is disposed in a space outside the process chamber. The space is arranged to selectively communicate with the interior of the process chamber. A negative charge applicator is configured to form a negatively charged state of the target object within the process chamber.

摘要翻译： 真空处理系统包括被配置为容纳目标物体并在真空环境下对其进行处理的处理室。 处理室设有排气系统和气体供应系统。 配置成产生负离子的离子发生器设置在处理室外部的空间中。 该空间被布置成选择性地与处理室的内部连通。 负电荷施加器被配置为在处理室内形成目标物体的带负电荷的状态。

公开(公告)号：US06515945B2

公开(公告)日：2003-02-04

申请号：US09266209

申请日：1999-03-10

申请人： Hiroyuki Suzuki ,  Takayuki Komiya ,  Katsumasa Yokoyama ,  Hitoshi Kimura

发明人： Hiroyuki Suzuki ,  Takayuki Komiya ,  Katsumasa Yokoyama ,  Hitoshi Kimura

IPC分类号： G11B2018

CPC分类号： G11B17/225

摘要： Locking claw engages a recording medium to be transferred, and a determination is made as to which of a plurality of predetermined points a current position of the locking member corresponds to. Current position of the recording medium can be determined indirectly on the basis of the thus-determined predetermined point corresponding to the current position of the locking member. If any recording medium is not properly settled in a predetermined rest position at power-ON, then the recording medium is automatically transferred to be settled in the predetermined rest position. Simplified detection of the position of the locking claw is made in absolute or quasi-absolute form, by a picker position detector unit that is provided in association with a rotating drive shaft of the locking member and employs a simply-constructed mechanism capable of generating detection pulses responsive to predetermined rotational angles of two shafts rotating at different rates. Each of the plurality of predetermined points defined for the locking claw can be identified in absolute or quasi-absolute form on the basis of a combination of patterns of the thus-generated pulses. Thus, in feed transfer of a recording medium, such as a DVD medium, the position of the medium can be detected in a simplified manner and can be automatically controlled to be properly settled in the predetermined position upon power-ON.

摘要翻译： 锁定爪与要传送的记录介质接合，并且确定锁定构件的当前位置对应于多个预定点中的哪一个。 可以基于与锁定构件的当前位置对应的如此确定的预定点间接地确定记录介质的当前位置。 如果任何记录介质在通电时未在预定的静止位置适当地定位，则记录介质被自动转印以在预定的静止位置中定影。 通过与锁定构件的旋转驱动轴相关联地设置的拾取器位置检测器单元，以绝对或准绝对形式简化检测锁定爪的位置，并采用能够产生检测的简单构造的机构 响应于以不同速率旋转的两个轴的预定旋转角度的脉冲。 基于由此产生的脉冲的图案的组合，能够以绝对或准绝对形式来识别为锁定爪定义的多个预定点中的每一个。 因此，在诸如DVD介质的记录介质的馈送传送中，可以以简化的方式检测介质的位置，并且可以在通电时自动控制以适当地定位在预定位置。

公开(公告)号：US20070134602A1

公开(公告)日：2007-06-14

申请号：US11610131

申请日：2006-12-13

申请人： Kenji Matsumoto ,  Takayuki Komiya ,  Eiichi Kondoh

发明人： Kenji Matsumoto ,  Takayuki Komiya ,  Eiichi Kondoh

IPC分类号： G03C5/16

CPC分类号： C23C18/02

摘要： A high-pressure processing apparatus is used for performing a film formation process on a target object, while using a process fluid containing a high-pressure fluid and a film formation source material. The apparatus includes a pressure tight container defining a process field for accommodating the target object, and configured to withstand a pressure applied from the high-pressure fluid. The pressure tight container is made of a first material. A support member is disposed inside the pressure tight container to support the target object. A fluid supply system is configured to supply the process fluid onto the target object. A thermally shielding layer is disposed to cover a surface of the pressure tight container defining the process field. The thermally shielding layer is made of a second material having a thermal conductivity higher than that of the first material.

摘要翻译： 在使用包含高压流体和成膜源材料的工艺流体的同时，使用高压处理装置对目标物体进行成膜处理。 该装置包括限定用于容纳目标物体的过程场的压力容器，并且被配置为承受从高压流体施加的压力。 耐压容器由第一材料制成。 支撑构件设置在耐压容器内部以支撑目标物体。 流体供应系统被配置为将过程流体供应到目标物体上。 热屏蔽层设置成覆盖限定过程场的压力容器的表面。 热屏蔽层由导热率高于第一材料的第二材料制成。

公开(公告)号：US20050104525A1

公开(公告)日：2005-05-19

申请号：US10986386

申请日：2004-11-12

申请人： Takayuki Komiya

发明人： Takayuki Komiya

IPC分类号： H01L21/3205 ,  C23C26/00 ,  C23C30/00 ,  H01J7/24 ,  H01L21/20 ,  H01L21/3105 ,  H01L21/469 ,  H01L21/768 ,  H01L23/52 ,  H05B31/26

CPC分类号： C23C30/00 ,  C23C26/00 ,  H01L21/3105 ,  H01L21/76838

摘要： A reduction process is performed at a low temperature to thereby realize a high production yield. An ion supply unit heats negative ions containing hydride ions to a predetermined temperature. The ion supply unit applies an electric field to a negative ion source with a predetermined intensity, so that the hydride ions are extracted from the negative ion source. Further, the ion supply unit supplies the hydride ions extracted into a processing chamber by a nonreactive gas of a carrier gas to thereby reduce an oxide film formed on a surface of a metallic film on a semiconductor wafer disposed inside the processing chamber.

摘要翻译： 在低温下进行还原处理，从而实现高产率。 离子供应单元将含有氢离子的负离子加热至预定温度。 离子供给单元对具有预定强度的负离子源施加电场，从负离子源提取氢离子。 此外，离子供给单元通过载气的非反应性气体提供到处理室中的氢化物离子，从而减少形成在设置在处理室内的半导体晶片上的金属膜的表面上的氧化膜。

公开(公告)号：US06573191B1

公开(公告)日：2003-06-03

申请号：US09665664

申请日：2000-09-20

申请人： Takayuki Komiya ,  Shinji Nagashima ,  Shigeyoshi Kojima

发明人： Takayuki Komiya ,  Shinji Nagashima ,  Shigeyoshi Kojima

IPC分类号： H01L2131

CPC分类号： H01L21/02282 ,  H01L21/02118 ,  H01L21/0212 ,  H01L21/022 ,  H01L21/31058 ,  H01L21/312 ,  H01L21/314 ,  H01L21/67109 ,  H01L21/6715 ,  Y10S414/135

摘要： Both of a first insulating film and a second insulating film are formed by a spin coating method. Accordingly, the formation of the first insulating film and the second insulating film can be performed in the same SOD processing system. Moreover, the aforesaid formation of both of the first insulating film and the second insulating film by the spin coating method can provide favorable low dielectric constant properties and good adhesion of the first insulating film and the second insulating film.

摘要翻译： 通过旋涂法形成第一绝缘膜和第二绝缘膜。 因此，可以在相同的SOD处理系统中进行第一绝缘膜和第二绝缘膜的形成。 此外，通过旋涂法上述第一绝缘膜和第二绝缘膜两者的形成可以提供良好的低介电常数性能和良好的第一绝缘膜和第二绝缘膜的附着力。

公开(公告)号：US5904557A

公开(公告)日：1999-05-18

申请号：US794936

申请日：1997-02-04

申请人： Takayuki Komiya ,  Yumiko Kawano

发明人： Takayuki Komiya ,  Yumiko Kawano

IPC分类号： H01L21/3205 ,  H01L21/304 ,  H01L21/3105 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L21/28

CPC分类号： H01L23/5226 ,  H01L21/76802 ,  H01L21/76883 ,  H01L23/53214 ,  H01L21/31053 ,  H01L2924/0002

摘要： A method for forming a multilevel interconnection of a semiconductor device of the present invention includes the steps of forming a first wiring layer by depositing a metallic film containing aluminum on an insulating film of a substrate and patterning the metallic film, forming an interlayer insulating film on the entire surface of the substrate to cover the wiring layer from the upper side, forming a connection hole reaching to the first wiring layer at a predetermined position of the interlayer insulating film, selectively depositing aluminum onto an interior of the connection hole at a volume fraction of 100% or more by CVD to fill the interior of the connection hole, flattening the entire upper surface of the interlayer insulating film including the connection hole filled with aluminum by a polishing process, washing the entire surface flattened by the polishing process, and depositing the metallic film containing aluminum at a predetermined position of the upper surface of the flattened and washed interlayer insulating film and patterning the metallic film, thereby forming a second wiring layer connected to the first wiring layer through aluminum filled in the connection hole.

摘要翻译： 形成本发明的半导体器件的多层互连的方法包括以下步骤：通过在衬底的绝缘膜上沉积包含铝的金属膜形成第一布线层并对金属膜进行图案化，形成层间绝缘膜 基板的整个表面从上侧覆盖布线层，在层间绝缘膜的预定位置处形成到达第一布线层的连接孔，以选择性的方式将铝沉积到连接孔的内部，体积分数 通过CVD填充100％以上以填充连接孔的内部，通过抛光处理使包括填充有铝的连接孔的层间绝缘膜的整个上表面变平，洗涤通过抛光处理而变平的整个表面，以及沉积 在f的上表面的预定位置处含有铝的金属膜 拉延和洗涤的层间绝缘膜并图案化金属膜，从而形成通过填充在连接孔中的铝连接到第一布线层的第二布线层。