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    Method of manufacturing semiconductor device
    4.
    发明授权
    Method of manufacturing semiconductor device 有权

    公开(公告)号：US06391770B1

    公开(公告)日：2002-05-21

    申请号：US09876044

    申请日：2001-06-08

    申请人： Katsuya Kosaki ,  Masahiro Tamaki ,  Takao Ishida

    发明人： Katsuya Kosaki ,  Masahiro Tamaki ,  Takao Ishida

    IPC分类号： H01L2144

    摘要： In a semiconductor device, an opening having a high aspect ratio from a back surface of a GaAs substrate and is formed by anisotropic dry etching. After an Au film is deposited on the entire back surface of the GaAs substrate, including inside of the opening, a Ni alloy is non-electrolytically plated. The Ni film can also be deposited on the inner wall and bottom of the opening. An IC substrate or FET may have the Ni film only at an area corresponding to the via hole. The back surface of the IC substrate or FET and the front surface of a package substrate are bonded to each other by AuSn solder poorly wetting the Ni film.

    Semiconductor device with high aspect ratio via hole including solder repelling coating
    5.
    发明授权
    Semiconductor device with high aspect ratio via hole including solder repelling coating 失效
    具有高纵横比通孔的半导体器件，包括焊料排斥涂层

    公开(公告)号：US06268619B1

    公开(公告)日：2001-07-31

    申请号：US09038090

    申请日：1998-03-11

    申请人： Katsuya Kosaki ,  Masahiro Tamaki ,  Takao Ishida

    发明人： Katsuya Kosaki ,  Masahiro Tamaki ,  Takao Ishida

    IPC分类号： H01L2980

    CPC分类号： H01L21/76898 ,  H01L21/76838 ,  H01L23/481 ,  H01L2924/0002 ,  H01L2924/10158 ,  H01L2924/10329 ,  H01L2924/00

    摘要： In a semiconductor device, an opening having a high aspect ratio extends from a back surface of a GaAs substrate and is formed by anisotropic dry etching. After an Au film is deposited on the entire back surface of the GaAs substrate, including inside of the opening, a Ni alloy is non-electrolytically plated. The Ni film can also be deposited on the inner wall and the bottom of the opening. An IC substrate or FET may have the Ni film only at an area corresponding to the via hole. The back surface of the IC substrate or FET and the front surface of a package substrate are bonded to each other by AuSn solder poorly wetting the Ni film.

    摘要翻译： 在半导体器件中，具有高纵横比的开口从GaAs衬底的背面延伸并且通过各向异性干蚀刻形成。 在Au膜沉积在GaAs衬底的整个背面（包括开口内部）之后，Ni合金是非电解电镀的。 Ni膜也可以沉积在开口的内壁和底部。 IC基板或FET可以仅在对应于通孔的区域具有Ni膜。 IC基板或FET的背面和封装基板的前表面通过AuSn焊料彼此接合，使Ni膜不良润湿。

    Method of fabricating semiconductor device
    6.
    发明授权
    Method of fabricating semiconductor device 失效
    制造半导体器件的方法

    公开(公告)号：US5998238A

    公开(公告)日：1999-12-07

    申请号：US93059

    申请日：1998-06-08

    申请人： Katsuya Kosaki

    发明人： Katsuya Kosaki

    IPC分类号： H01L23/36 ,  H01L21/301 ,  H01L21/78 ,  H01L23/367 ,  H01L23/373 ,  H01L23/24

    CPC分类号： H01L21/78 ,  H01L23/3672 ,  H01L23/3735 ,  H01L2224/291 ,  H01L2924/01019 ,  H01L2924/01079 ,  H01L2924/10158

    摘要： A method of fabricating a semiconductor device includes forming a first chip separating groove such that its depth is less than the total depth of the wafer, forming a first metallization layer inside the first chip separating groove, thinning the wafer, forming a second chip separating groove in a region opposite the first chip separating groove of the rear surface of the wafer so that the wafer is separated into a plurality of semiconductor chips, forming metallization layer inside the second chip separating groove, forming a PHS layer on the entire rear surface of the wafer, and cutting the wafer at the chip separating groove, thereby producing a semiconductor device. The burr produced when the wafer is cut does not protrude from the rear surface of the wafer, assuring good adhesion between the semiconductor chip and a chip carrier, realizing a semiconductor device of a good heat dispersion characteristic and, therefore, of high reliability.

    摘要翻译： 一种制造半导体器件的方法包括：形成第一芯片分离槽，使其深度小于晶片的总深度，在第一芯片分离槽的内部形成第一金属化层，使晶片变薄，形成第二芯片分离槽 在与晶片的后表面的第一芯片分离槽相对的区域中，将晶片分离成多个半导体芯片，在第二芯片分离槽内形成金属化层，在第二芯片分离槽的整个后表面上形成PHS层 晶片，并在芯片分离槽处切割晶片，从而制造半导体器件。 当晶片被切割时产生的毛刺不会从晶片的后表面突出，确保半导体芯片和芯片载体之间的良好的粘合性，从而实现了具有良好散热特性，因此具有高可靠性的半导体器件。

    Plating apparatus for plating a wafer
    7.
    发明授权
    Plating apparatus for plating a wafer 失效
    电镀电镀电镀装置

    公开(公告)号：US6033540A

    公开(公告)日：2000-03-07

    申请号：US972969

    申请日：1997-11-19

    申请人： Katsuya Kosaki ,  Masahiro Tamaki

    发明人： Katsuya Kosaki ,  Masahiro Tamaki

    IPC分类号： C25D5/08 ,  C25D7/12 ,  C25D17/00 ,  C25D17/12 ,  H01L21/288 ,  C25B11/00

    CPC分类号： C25D7/12 ,  C25D17/001 ,  H01L21/288 ,  Y10S204/07

    摘要： The present invention provides for a plating apparatus and a method of plating, which improve the uniformity of a plated coating thickness without changing the flow velocity of a feed plating solution. An aperture can be provided at a center of a meshed anode electrode of the plating apparatus to obtain an electric field density distribution between the meshed anode electrode and a wafer that is lower in the central portion of the wafer than in the edge portion of the wafer.

    摘要翻译： 本发明提供一种电镀装置和电镀方法，其不改变供电电镀液的流速来提高电镀层厚度的均匀性。 可以在电镀装置的网状阳极电极的中心处设置孔径，以获得在晶片的中心部分的网状阳极电极和晶片之间的电场密度分布比在晶片的边缘部分 。

    Apparatus and method of electroplating
    8.
    发明授权
    Apparatus and method of electroplating 失效
    电镀设备及方法

    公开(公告)号：US5441629A

    公开(公告)日：1995-08-15

    申请号：US192853

    申请日：1994-02-07

    申请人： Katsuya Kosaki

    发明人： Katsuya Kosaki

    IPC分类号： C25D5/08 ,  C25D7/12 ,  C25D17/00 ,  C25D17/06 ,  H05K3/24 ,  C25D5/48

    CPC分类号： C25D17/06 ,  C25D5/08 ,  H05K3/241

    摘要： An electroplating apparatus includes a casing having a large opening at the bottom, a substrate being electroplated in the casing, a plating solution injector penetrating through an upper part of the casing for introducing a plating solution into the casing, an exhaust port penetrating through an upper part of the casing for draining the plating solution, a vertically movable substrate stage disposed beneath the casing for holding the substrate and having an opening smaller than the substrate, and a spin chuck for carrying the substrate to the substrate stage. In this apparatus, initially, the substrate is put on the spin chuck. Then, the substrate stage moves up and closes the casing from the bottom, and the substrate is electroplated in the casing. After the electroplating, the substrate stage moves down, and the substrate is transferred to the spin chuck. Automatic transfer of the substrate is possible using a uniaxial robot that moves only in the vertical or horizontal directions.

    摘要翻译： 一种电镀设备，包括底部具有大开口的壳体，在壳体内电镀的基板，穿过壳体上部的电镀液注入器，用于将电镀液引入到壳体内，穿过上部的排气口 用于排出电镀溶液的壳体的一部分，设置在壳体下方的用于保持基板并具有比基板小的开口的可垂直移动的基板台，以及用于将基板运送到基板台的旋转卡盘。 在该装置中，首先将基板放在旋转卡盘上。 然后，基板台从底部向上移动并封闭壳体，并且将基板电镀在壳体中。 电镀后，基板台向下移动，将基板转移到旋转卡盘。 使用仅沿垂直方向或水平方向移动的单轴机器人可自动转移基板。

    Method for manufacturing semiconductor device and semiconductor device
    10.
    发明授权
    Method for manufacturing semiconductor device and semiconductor device 失效
    半导体器件和半导体器件的制造方法

    公开(公告)号：US06335265B1

    公开(公告)日：2002-01-01

    申请号：US09447289

    申请日：1999-11-23

    申请人： Katsuya Kosaki ,  Hirofumi Nakano ,  Tetsuo Kunii

    发明人： Katsuya Kosaki ,  Hirofumi Nakano ,  Tetsuo Kunii

    IPC分类号： H01L2178

    CPC分类号： H01L21/6835 ,  H01L21/288 ,  H01L21/78 ,  H01L23/3677 ,  H01L2221/6834 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A semiconductor device has a plated heat sink layer on the back surface, preventing a short-circuit between a bonding wire and a first metal layer. A method of making a semiconductor device includes forming a catalyst layer on a bottom of a first separation groove in the front surface of a semiconductor substrate, forming a first metal layer selectively in the first separation groove by electroless plating, using the catalyst layer as a catalyst.

    摘要翻译： 半导体器件在背面具有电镀散热层，防止接合线和第一金属层之间的短路。 制造半导体器件的方法包括在半导体衬底的前表面的第一分离槽的底部形成催化剂层，通过无电解电镀在第一分离槽中选择性地形成第一金属层，使用催化剂层作为 催化剂。