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公开(公告)号：US06859133B2
公开(公告)日：2005-02-22
申请号：US10258905
申请日：2002-02-28
摘要： The resistor of the present invention comprises a substrate, a pair of upper electrode layers disposed on one surface of the substrate, and a resistor layer connected to the pair of upper electrode layers, wherein the upper electrode layer includes a first thin film layer that strongly adheres to the substrate and the resistor layer, and a second thin film layer having volume resistivity lower than the volume resistivity of the first upper electrode thin film layer. Further, the resistor of the present invention comprises a pair of side electrodes, electrically connected to the upper electrode layers, at the end portion of the substrate, and the side electrode includes a first side thin film layer and a second side thin film layer, and the material that forms the second side thin film layer has a solid solubility with the first side thin film layer.
摘要翻译： 本发明的电阻器包括衬底，设置在衬底的一个表面上的一对上电极层和连接到一对上电极层的电阻层，其中上电极层包括强烈的第一薄膜层 粘附到基板和电阻层，以及具有低于第一上电极薄膜层的体积电阻率的体积电阻率的第二薄膜层。 此外，本发明的电阻器包括在基板的端部处电连接到上电极层的一对侧电极，并且侧电极包括第一侧薄膜层和第二侧薄膜层， 并且形成第二侧薄膜层的材料与第一侧薄膜层具有固体溶解性。
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公开(公告)号：US08841615B2
公开(公告)日：2014-09-23
申请号：US13637227
申请日：2011-02-22
申请人： Nobuo Tanaka , Tsutomu Nakanishi , Yoshikazu Takeda , Hidefumi Asano , Koh Saitoh , Toru Ujihara , Makoto Kuwahara
发明人： Nobuo Tanaka , Tsutomu Nakanishi , Yoshikazu Takeda , Hidefumi Asano , Koh Saitoh , Toru Ujihara , Makoto Kuwahara
IPC分类号： H01J37/26 , H01J37/073
CPC分类号： H01J37/26 , H01J37/073 , H01J37/265 , H01J37/266 , H01J2237/06333 , H01J2237/06383 , H01J2237/24557
摘要： An electron microscope which utilizes a polarized electron beam and can obtain a high contrast image of a sample is provided. The microscope includes: a laser; a polarization apparatus that polarizes a laser beam into a circularly polarized laser beam; a semiconductor photocathode that is provided with a strained superlattice semiconductor layer and generates a polarized electron beam when irradiated with the circularly polarized laser beam; a transmission electron microscope that utilizes the polarized electron beam; an electron beam intensity distribution recording apparatus arranged at a face reached by the polarized electron beam that has transmitted through the sample. An electron beam intensity distribution recording apparatus records an intensity distribution before and after the polarization of the electron beam is reversed, and a difference acquisition apparatus calculates a difference therebetween.
摘要翻译： 提供了利用偏振电子束并且可以获得样品的高对比度图像的电子显微镜。 显微镜包括：激光; 将激光束偏振成圆偏振激光束的偏振装置; 半导体光电阴极，其设置有应变超晶格半导体层，并且当被圆偏振激光束照射时产生偏振电子束; 利用偏振电子束的透射电子显微镜; 电子束强度分布记录装置，布置在透过样品的偏振电子束所达到的面上。 电子束强度分布记录装置记录电子束的偏振前后的强度分布，差分获取装置计算其间的差。
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3.发明授权Displaying device and lighting device employing organic electroluminescence element 有权使用有机电致发光元件的显示装置和照明装置公开(公告)号：US07928353B2
公开(公告)日：2011-04-19
申请号：US12392691
申请日：2009-02-25
IPC分类号： H01J1/46
CPC分类号： H01L51/5203 , H01L51/5234 , H01L2251/5315
摘要： The Present invention provides an organic EL display and a lighting device having high efficiency. The organic EL display comprises a substrate, a pixel-driving circuit unit, and pixels arranged in the form of a matrix on the substrate. The pixel comprises a light-emitting part, and the light-emitting part is composed of a first electrode placed near to the substrate, a second electrode placed far from the substrate, and at least one organic layer placed between the first and second electrodes. The second electrode has a metal electrode layer having a thickness of 10 nm to 200 nm, and the metal electrode layer comprises a metal part and plural openings penetrating through the layer. The metal part is seamless and formed of metal continuously connected without breaks between any points therein. The openings have an average opening diameter of 10 nm to 780 nm, and are arranged so periodically that the distribution of the arrangement is represented by a radial distribution function curve having a half-width of 5 nm to 300 nm.
摘要翻译： 本发明提供一种高效率的有机EL显示器和照明装置。 有机EL显示器包括基板，像素驱动电路单元和在基板上以矩阵形式布置的像素。 像素包括发光部分，并且发光部分由放置在基板附近的第一电极，远离基板的第二电极和放置在第一和第二电极之间的至少一个有机层组成。 第二电极具有厚度为10nm至200nm的金属电极层，并且金属电极层包括金属部分和贯穿该层的多个开口。 金属部件是无缝的，并且由连续连接的金属形成，其中任何点之间没有断裂。 开口的平均开口直径为10nm〜780nm，并且周期性地布置，使得布置的分布由半宽度为5nm至300nm的径向分布函数曲线表示。
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公开(公告)号：US07759861B2
公开(公告)日：2010-07-20
申请号：US11234189
申请日：2005-09-26
申请人： Akira Fujimoto , Koji Asakawa , Tsutomu Nakanishi
发明人： Akira Fujimoto , Koji Asakawa , Tsutomu Nakanishi
CPC分类号： H01L51/5262 , H01L27/3211
摘要： In an organic EL display provided with a transparent substrate, a buffer layer provided on the transparent substrate, and an organic EL element provided on the buffer layer, the buffer layer is formed of a material having the same refractive index as the transparent electrode of the EL element, and has a two-dimensional concavo-convex structure having two pattern periods.
摘要翻译： 在设置有透明基板的有机EL显示器中，设置在透明基板上的缓冲层和设置在缓冲层上的有机EL元件，缓冲层由具有与透明基板的透明电极相同的折射率的材料形成 EL元件，并且具有具有两个图案周期的二维凹凸结构。
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5.发明授权
公开(公告)号：US5834791A
公开(公告)日：1998-11-10
申请号：US960592
申请日：1997-10-30
CPC分类号： H01J1/34 , H01J3/021 , H01J2201/3423 , H01J2203/0296
摘要： A process of producing a highly spin-polarized electron beam, including the steps of applying a light energy to a semiconductor device comprising a first compound semiconductor layer having a first lattice constant and a second compound semiconductor layer having a second lattice constant different from the first lattice constant, the second semiconductor layer being in junction contact with the first semiconductor layer to provide a strained semiconductor heterostructure, a magnitude of mismatch between the first and second lattice constants defining an energy splitting between a heavy hole band and a light hole band in the second semiconductor layer, such that the energy splitting is greater than a thermal noise energy in the second semiconductor layer in use; and extracting the highly spin-polarized electron beam from the second semiconductor layer upon receiving the light energy. A semiconductor device for emitting, upon receiving a light energy, a highly spin-polarized electron beam, including a first compound semiconductor layer formed of gallium arsenide phosphide, GaAs.sub.1-x P.sub.x, and having a first lattice constant; and a second compound semiconductor layer provided on the first semiconductor layer, the second semiconductor layer having a second lattice constant different from the first lattice constant and a thickness, t, smaller than the thickness of the first semiconductor layer.
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公开(公告)号：US5048982A
公开(公告)日：1991-09-17
申请号：US596090
申请日：1990-10-11
申请人： Tsutomu Nakanishi
发明人： Tsutomu Nakanishi
IPC分类号： G11B15/60 , B65G39/02 , F16C13/00 , F16C13/02 , F16C19/14 , F16C19/16 , F16C19/18 , F16C25/08 , G11B15/26
CPC分类号： F16C25/083 , F16C19/16 , F16C19/18
摘要： This invention relates to a rotary structure adapted to be used as a spindle unit for a miniature motor or miniature rotor or as a tape guide roller for a VTR. In the structure of the rotary mechanism, instead of a conventional expensive radial ball bearing, a substantially V-shaped groove is formed on a shaft itself so as to hold balls provided between this groove and the tapered surface or concave spherical ball receiving surface of an outer race provided around the groove.
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公开(公告)号：US4958945A
公开(公告)日：1990-09-25
申请号：US344674
申请日：1989-04-06
申请人： Tsutomu Nakanishi
发明人： Tsutomu Nakanishi
CPC分类号： F16C19/183 , F16C25/08 , F16C43/04 , G11B15/28 , G11B15/60
摘要： A spindle unit adapted to be used for miniature motors and miniature rotors.
摘要翻译： 适用于微型电机和微型转子的主轴单元。
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公开(公告)号：US08754431B2
公开(公告)日：2014-06-17
申请号：US13412044
申请日：2012-03-05
申请人： Akira Fujimoto , Tsutomu Nakanishi , Ryota Kitagawa , Kenji Nakamura , Shinji Nunotani , Takanobu Kamakura
发明人： Akira Fujimoto , Tsutomu Nakanishi , Ryota Kitagawa , Kenji Nakamura , Shinji Nunotani , Takanobu Kamakura
摘要： According to one embodiment, a semiconductor light emitting device includes first and second electrode layers, a and second semiconductor layers, a light emitting layer and a first intermediate layer. The first electrode layer has a metal portion having through-holes. The second electrode layer is stacked with the first electrode layer along a stacked direction, and light-reflective. The first semiconductor layer is provided between the first and second electrode layers, and has a first conductivity type. The second semiconductor layer is provided between the first semiconductor layer and the second electrode layer, and has a second conductivity type. The light emitting layer is provided between the first and second semiconductor layers. The first intermediate layer is provided between the second semiconductor layer and the second electrode layer, transmissive to light emitted from the light emitting layer, and includes first contact portions and a first non-contact portion.
摘要翻译： 根据一个实施例，半导体发光器件包括第一和第二电极层，第一和第二半导体层，发光层和第一中间层。 第一电极层具有具有通孔的金属部分。 第二电极层沿堆叠方向与第一电极层堆叠并且具有光反射性。 第一半导体层设置在第一和第二电极层之间，并且具有第一导电类型。 第二半导体层设置在第一半导体层和第二电极层之间，具有第二导电型。 发光层设置在第一和第二半导体层之间。 第一中间层设置在第二半导体层和第二电极层之间，对从发光层发射的光透射，并且包括第一接触部分和第一非接触部分。
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公开(公告)号：US20130135746A1
公开(公告)日：2013-05-30
申请号：US13723374
申请日：2012-12-21
申请人： Tsutomu Nakanishi , Akira Fujimoto , Koji Asakawa , Takeshi Okino
发明人： Tsutomu Nakanishi , Akira Fujimoto , Koji Asakawa , Takeshi Okino
IPC分类号： G02B1/11
CPC分类号： G02B1/118 , B81C1/0046 , C03C15/00 , C03C17/007 , C03C17/28 , C03C2217/42 , C03C2217/77 , C03C2218/34 , C03C2218/355 , Y10T428/24421
摘要： The present invention provides such a formation method that an antireflection structure having excellent antireflection functions can be formed in a large area and at small cost. Further, the present invention also provides an antireflection structure formed by that method. In the formation method, a base layer and particles placed thereon are subjected to an etching process. The particles on the base layer serve as an etching mask in the process, and hence they are more durable against etching than the base layer. The etching rate ratio of the base layer to the particles is more than 1 but not more than 5. The etching process is stopped before the particles disappear. It is also possible to produce an antireflection structure by nanoimprinting method employing a stamper. The stamper is formed by use of a master plate produced according to the above formation method.
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公开(公告)号：US08450768B2
公开(公告)日：2013-05-28
申请号：US13335984
申请日：2011-12-23
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L2933/0091
摘要： The present invention provides a semiconductor light-emitting element comprising an electrode part excellent in ohmic contact and capable of emitting light from the whole surface. An electrode layer placed on the light-extraction side comprises a metal part and plural openings. The metal part is so continuous that any pair of point-positions in the part is continuously connected without breaks, and the metal part in 95% or more of the whole area continues linearly without breaks by the openings in a straight distance of not more than ⅓ of the wavelength of light emitted from an active layer. The average opening diameter is of 10 nm to ⅓ of the wavelength of emitted light. The electrode layer has a thickness of 10 nm to 200 nm, and is in good ohmic contact with a semiconductor layer.
摘要翻译： 本发明提供一种半导体发光元件，其包括欧姆接触性优异且能够从整个表面发光的电极部。 放置在光提取侧的电极层包括金属部分和多个开口。 金属部分是连续的，使得零件中的任何一个点位置连续地连接而不断裂，并且整个区域的95％或更多的金属部分在直线上不间断地继续直线而不断裂，直线距离不大于 从活性层发射的光的1/3。 平均开口直径为发射光波长的10nm至1/3。 电极层的厚度为10nm〜200nm，与半导体层良好的欧姆接触。
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