公开(公告)号：US20080184543A1

公开(公告)日：2008-08-07

申请号：US12024445

申请日：2008-02-01

申请人： Takuji Sako ,  Yusaku Kashiwagi ,  Hiroyuki Toshima ,  Kaoru Maekawa

发明人： Takuji Sako ,  Yusaku Kashiwagi ,  Hiroyuki Toshima ,  Kaoru Maekawa

IPC分类号： H01L21/768 ,  H01L21/67

CPC分类号： H01L23/53238 ,  H01J37/32192 ,  H01L21/02074 ,  H01L21/76849 ,  H01L21/76856 ,  H01L21/76867 ,  H01L21/76883 ,  H01L21/76886 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device manufacturing method capable of preventing an infliction of damage upon an interlayer insulating film and moisture adsorption thereto due to opening to atmosphere in a process of forming a CuSiN barrier by infiltrating Si into a surface of a copper-containing metal film and nitrifying a Si-infiltrated portion is disclosed.When a semiconductor device is manufactured through the processes of preparing a semiconductor substrate having a copper-containing metal film exposed on a surface thereof; purifying a surface of the copper-containing metal film by using radicals or by using a thermo-chemical method; infiltrating Si into the surface of the copper-containing metal film; and nitrifying a Si-infiltrated portion of the copper-containing metal film by radicals, the purification process, the Si introduction process and the nitrification process are successively performed without breaking a vacuum.

摘要翻译： 一种半导体器件制造方法，其能够防止在通过将Si渗入到含铜金属膜的表面中而形成CuSiN势垒的过程中由于向大气开放而对层间绝缘膜造成的损害和水分吸附，并且硝化 公开了Si渗透部分。 当半导体器件通过制备在其表面上暴露的含铜金属膜的半导体衬底的工艺制造时; 通过使用自由基或使用热化学方法来净化含铜金属膜的表面; 将Si渗入含铜金属膜的表面; 并且通过自由基对含铜金属膜的Si渗透部分进行硝化，在不破坏真空的情况下连续进行净化处理，Si引入工序和硝化处理。

公开(公告)号：US20090017621A1

公开(公告)日：2009-01-15

申请号：US12217202

申请日：2008-07-01

申请人： Takuji Sako ,  Kaoru Maekawa

发明人： Takuji Sako ,  Kaoru Maekawa

IPC分类号： H01L21/768 ,  H01L21/67

CPC分类号： H01L21/67745 ,  H01L21/67161 ,  H01L21/67196 ,  H01L21/76849 ,  H01L21/76856 ,  H01L21/76862

摘要： The semiconductor manufacturing method includes the step (ST.1) of preparing a semiconductor substrate with a copper or copper-containing metal film exposed on a surface, step (ST.2) of depositing on the copper or copper-containing metal film a metal film consisting essentially of any one of CoWB, CoWP, or W; step (ST.3) of introducing Si into the above-described metal film, and step (ST.4) of nitriding the metal film introduced with Si.

摘要翻译： 半导体制造方法包括制备在表面露出铜或铜的金属膜的半导体衬底的步骤（ST.1），在铜或含铜金属膜上沉积金属的步骤（ST.2） 基本上由CoWB，CoWP或W中的任何一种组成的膜; 将Si引入到上述金属膜中的步骤（ST.3），以及引入Si的金属膜的氮化步骤（ST.4）。

公开(公告)号：US20070122752A1

公开(公告)日：2007-05-31

申请号：US11564548

申请日：2006-11-29

申请人： Ryuichi ASAKO ,  Kaoru Maekawa ,  Yasushi Fujii

发明人： Ryuichi ASAKO ,  Kaoru Maekawa ,  Yasushi Fujii

IPC分类号： G03F7/26

CPC分类号： H01L21/76808 ,  H01L21/3105 ,  H01L21/31138 ,  H01L21/67051 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/67178 ,  H01L21/67207 ,  H01L21/76814 ,  H01L21/76826

摘要： A semiconductor device manufacturing method includes: forming an etching mask having a predetermined circuit pattern on a surface of an etching target film disposed on a semiconductor substrate; etching the etching target film through the etching mask to form a groove or hole in the etching target film; removing the etching mask by a process including at least a process using an ozone-containing gas; and recovering damage of the etching target film caused before or in said removing the etching mask, while supplying a predetermined recovery gas.

摘要翻译： 半导体器件制造方法包括：在设置在半导体衬底上的蚀刻靶膜的表面上形成具有预定电路图案的蚀刻掩模; 通过蚀刻掩模蚀刻蚀刻目标膜，以在蚀刻靶膜中形成凹槽或孔; 通过包括至少使用含臭氧气体的方法的方法去除蚀刻掩模; 并且在提供预定的回收气体的同时恢复在蚀刻掩模去除之前或之中引起的蚀刻目标膜的损伤。

公开(公告)号：US06893954B2

公开(公告)日：2005-05-17

申请号：US10476006

申请日：2002-07-23

申请人： Kaoru Maekawa

发明人： Kaoru Maekawa

IPC分类号： H01L21/302 ,  H01L21/033 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/768 ,  H01L21/4763

CPC分类号： H01L21/31144 ,  H01L21/0332 ,  H01L21/76811 ,  H01L21/76813

摘要： A method of efficiently fabricating a semiconductor device with less fabrication steps is provided. A second inter-layer insulation film is removed to form an aperture by substantially using a first hard mask film as a mask in accordance with the method of fabricating a semiconductor device having a multi-layer wiring structure using a dual-damascene method. In addition, an etching stopper film is removed, and then a first inter-layer insulation film is removed to form a via hole in the first inter-layer insulation film.

摘要翻译： 提供了一种有效地制造具有较少制造步骤的半导体器件的方法。 根据使用双镶嵌方法制造具有多层布线结构的半导体器件的方法，通过基本上使用第一硬掩模膜作为掩模，去除第二层间绝缘膜以形成孔。 此外，除去蚀刻停止膜，然后除去第一层间绝缘膜，以在第一层间绝缘膜中形成通孔。

公开(公告)号：US4317661A

公开(公告)日：1982-03-02

申请号：US067916

申请日：1979-08-17

申请人： Ryosuke Sasaoka ,  Yasuo Ishino ,  Kaoru Maekawa

发明人： Ryosuke Sasaoka ,  Yasuo Ishino ,  Kaoru Maekawa

IPC分类号： B03C3/12 ,  B03C3/41

CPC分类号： B03C3/12

摘要： An electronic air cleaner is disclosed in which the corona discharge wire and the counterelectrode are positioned outside the flowpath of dust-laden air. Diverging electric force lines are discharged from the discharge wire electrode, which is nearer the flow path than the counterelectrode, when a high voltage is applied and ions are directed into the passing airflow path in a reacting area or zone. Dust contained in the air flow path is electrically charged by the ions and collected on a filter, which may also be electrically charged, positioned downstream from the reacting zone. In the device the discharge wire is not directly exposed to the dust-laden air, the electrically charged particles being collected on a separate, easily cleaned filter. The design of the electronic air cleaner requires less maintenance, easier cleaning and a longer period of operational quality.

摘要翻译： 公开了一种电子空气净化器，其中电晕放电线和对电极位于除尘空气的流路的外侧。 当施加高电压并且离子被引导到反应区域或区域中的通过气流路径中时，发散电力线从比接近电极更靠近流动路径的放电线电极放电。 包含在空气流路中的灰尘被离子带电并收集在也可以带电的过滤器上，位于反应区的下游。 在该装置中，放电线不直接暴露于含灰尘的空气中，带电粒子被收集在单独容易清洁的过滤器上。 电子空气净化器的设计需要较少的维护，更容易的清洁和更长的操作质量。

公开(公告)号：US07902077B2

公开(公告)日：2011-03-08

申请号：US11564548

申请日：2006-11-29

申请人： Ryuichi Asako ,  Kaoru Maekawa ,  Yasushi Fujii

发明人： Ryuichi Asako ,  Kaoru Maekawa ,  Yasushi Fujii

IPC分类号： H01L21/302

CPC分类号： H01L21/76808 ,  H01L21/3105 ,  H01L21/31138 ,  H01L21/67051 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/67178 ,  H01L21/67207 ,  H01L21/76814 ,  H01L21/76826

摘要： A semiconductor device manufacturing method includes: forming an etching mask having a predetermined circuit pattern on a surface of an etching target film disposed on a semiconductor substrate; etching the etching target film through the etching mask to form a groove or hole in the etching target film; removing the etching mask by a process including at least a process using an ozone-containing gas; and recovering damage of the etching target film caused before or in said removing the etching mask, while supplying a predetermined recovery gas.

摘要翻译： 半导体器件制造方法包括：在设置在半导体衬底上的蚀刻靶膜的表面上形成具有预定电路图案的蚀刻掩模; 通过蚀刻掩模蚀刻蚀刻目标膜，以在蚀刻靶膜中形成凹槽或孔; 通过包括至少使用含臭氧气体的方法的方法去除蚀刻掩模; 并且在提供预定的回收气体的同时恢复在蚀刻掩模去除之前或之中引起的蚀刻目标膜的损伤。

公开(公告)号：US06706334B1

公开(公告)日：2004-03-16

申请号：US09437500

申请日：1999-11-10

申请人： Yasuo Kobayashi ,  Kotaro Miyatani ,  Kaoru Maekawa

发明人： Yasuo Kobayashi ,  Kotaro Miyatani ,  Kaoru Maekawa

IPC分类号： H01L21306

CPC分类号： H01L21/02063 ,  H01J37/32082 ,  H01J37/32357 ,  H01J37/3244 ,  H01J2237/2001 ,  H01L21/31116 ,  H01L21/67069 ,  H01L21/67115

摘要： Disclosed are a processing method and apparatus for removing a native oxide film from the surface of a subject to be treated. In this method and apparatus, gas generated from N2, H2 and NF3 gases is reacted with the surface of the subject to degenerate the native oxide film into a reactive film. If the subject is heated to a given temperature, the reactive film is sublimated and thus the native oxide film is removed. Plasma is generated from the N2 and H2 gases and then activated to form an activated gas species. The NF3 gas is added to the activated gas species to generate an activated gas of these three gases. In the step of forming the reactive film, the subject is cooled to not higher than a predetermined temperature by a cooling means. In the step of sublimating the reactive film, the subject is lifted up to a predetermined heating position. Also disclosed is a cluster system which includes the treatment apparatus of the present invention and other apparatuses and which is capable of carrying a subject to be treated in an unreactive atmosphere.

摘要翻译： 公开了一种从待处理对象的表面除去天然氧化膜的处理方法和装置。 在这种方法和装置中，从N2，H2和NF3气体产生的气体与受试者的表面反应，将天然氧化膜简化为反应性膜。 如果将受试者加热到给定的温度，则反应性膜被升华，因此去除了自然氧化膜。 从N 2和H 2气体产生等离子体，然后激活以形成活化气体物质。 将NF 3气体加入到活化气体物质中以产生这三种气体的活化气体。 在形成反应性膜的步骤中，通过冷却装置将被检体冷却至不高于预定温度。 在升华反应膜的步骤中，将被摄体提升到预定的加热位置。 还公开了一种集群系统，其包括本发明的治疗装置和其他装置，并且能够携带在无反应气氛中待治疗的对象。

公开(公告)号：US5373145A

公开(公告)日：1994-12-13

申请号：US77048

申请日：1993-06-16

申请人： Sachiko Endo ,  Koji Murakami ,  Teruya Tanaka ,  Kaoru Maekawa ,  Tatsuya Nakagawa

发明人： Sachiko Endo ,  Koji Murakami ,  Teruya Tanaka ,  Kaoru Maekawa ,  Tatsuya Nakagawa

IPC分类号： F24C7/02 ,  H05B6/68

CPC分类号： H05B6/6417 ,  H05B6/6411 ,  H05B6/6482

摘要： A cooking apparatus for heating food to be served and capable of being operated with utmost simplicity without using and choosing various cooking-mode selection keys so as to achieve superb ease-of-operation. The cooking apparatus includes a cooking chamber for placing and storing food to be heated by the apparatus and a detector for detecting a state of a door attached to the cooking chamber, the door being freely openable and closable against an opening portion of the cooking chamber. An optical sensor, having a plurality of light emitting portions is disposed in a side of the cooking chamber and a plurality of light receiving portions are disposed counter to the light emitting portions. A drive unit is provided for driving the optical sensor and a judgement unit verifies and determines a cooking mode suitable for the food placed in the cooking chamber responsive to a signal from the optical sensor, where the drive unit is activated when the detector detects that the door is closed.

摘要翻译： 一种用于加热食物的烹饪设备，并且能够以最简单的方式操作，而不使用和选择各种烹饪模式选择键，以便实现极好的操作简便性。 该烹饪设备包括一个用于放置和储存被该设备加热的食物的烹饪室和一个用于检测安装在烹饪室上的门的状态的检测器，该门能够自由地打开和关闭烹饪室的开口部分。 具有多个发光部分的光学传感器设置在烹饪室的一侧，并且多个光接收部分与发光部分相对设置。 提供驱动单元用于驱动光学传感器，并且判断单元响应于来自光学传感器的信号来验证和确定适合放置在烹饪室中的食物的烹饪模式，其中当检测器检测到 门关闭。

公开(公告)号：US09121094B2

公开(公告)日：2015-09-01

申请号：US12072089

申请日：2008-02-22

申请人： Kaoru Maekawa ,  Hiroyuki Nagai ,  Tatsuo Hatano ,  Takashi Sakuma

发明人： Kaoru Maekawa ,  Hiroyuki Nagai ,  Tatsuo Hatano ,  Takashi Sakuma

IPC分类号： C23C14/34 ,  C23C14/18 ,  C23C14/02 ,  C23C14/54 ,  H01L21/285 ,  H01L21/768 ,  H01L23/532

CPC分类号： C23C14/185 ,  C23C14/027 ,  C23C14/345 ,  C23C14/544 ,  H01L21/2855 ,  H01L21/76844 ,  H01L21/76855 ,  H01L21/76873 ,  H01L21/76883 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： The objective of the present invention is to provide a technique capable of easily forming an alloy layer containing an additive metal on an object to provide a concentration gradient in a thickness direction by sputtering in one treatment vessel. That is, the present invention can form a film with the desired concentration, and includes a first film forming process and a second film forming process that changes at least one of, the pressure in the treatment vessel, and the electric power so they are different from the first film forming process, so that the concentration of the additive metal is different from the concentration of the additive metal of the first alloy film.

摘要翻译： 本发明的目的是提供一种能够在一个处理容器中通过溅射在物体上容易地形成含有添加金属的合金层以在厚度方向上提供浓度梯度的技术。 也就是说，本发明可以形成具有所需浓度的膜，并且包括第一成膜工艺和第二成膜工艺，其改变处理容器中的压力和电功率中的至少一个，使得它们不同 从第一成膜工序，使添加剂金属的浓度与第一合金膜的添加金属的浓度不同。

公开(公告)号：US20110120650A1

公开(公告)日：2011-05-26

申请号：US13019809

申请日：2011-02-02

申请人： Ryuichi Asako ,  Kaoru Maekawa ,  Yasushi Fujii

发明人： Ryuichi Asako ,  Kaoru Maekawa ,  Yasushi Fujii

IPC分类号： C23F1/08 ,  B08B13/00

CPC分类号： H01L21/76808 ,  H01L21/3105 ,  H01L21/31138 ,  H01L21/67051 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/67178 ,  H01L21/67207 ,  H01L21/76814 ,  H01L21/76826

摘要： A semiconductor device manufacturing method includes: forming an etching mask having a predetermined circuit pattern on a surface of an etching target film disposed on a semiconductor substrate; etching the etching target film through the etching mask to form a groove or hole in the etching target film; removing the etching mask by a process including at least a process using an ozone-containing gas; and recovering damage of the etching target film caused before or in said removing the etching mask, while supplying a predetermined recovery gas.

摘要翻译： 半导体器件制造方法包括：在设置在半导体衬底上的蚀刻靶膜的表面上形成具有预定电路图案的蚀刻掩模; 通过蚀刻掩模蚀刻蚀刻目标膜，以在蚀刻靶膜中形成凹槽或孔; 通过包括至少使用含臭氧气体的方法的方法去除蚀刻掩模; 并且在提供预定的回收气体的同时恢复在蚀刻掩模去除之前或之中引起的蚀刻目标膜的损伤。