公开(公告)号：US20080036069A1

公开(公告)日：2008-02-14

申请号：US11812154

申请日：2007-06-15

申请人： Tetsuo Ito ,  Takayuki Yoshida ,  Toshiyuki Fukuda ,  Takao Ochi

发明人： Tetsuo Ito ,  Takayuki Yoshida ,  Toshiyuki Fukuda ,  Takao Ochi

IPC分类号： H01L23/48 ,  B29C45/00 ,  H01L21/56

CPC分类号： H01L21/565 ,  B29C45/14655 ,  B29C45/2708 ,  B29C45/34 ,  H01L21/561 ,  H01L23/3121 ,  H01L24/45 ,  H01L24/48 ,  H01L24/97 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/15311 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2224/85 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753

摘要： A production equipment includes a substrate 2 placed inside and having a plurality of semiconductor elements 3 mounted thereon, and a resin molding mold 20 having a cavity 21. The mold 20 has resin injection ports 29a and air release ports 30a. Each of the resin injection ports 29a is formed in a top surface portion of the cavity in the mold in association with the corresponding semiconductor element 3. Each of the air release ports 30a is formed around each of the resin injection ports 29a.

摘要翻译： 生产设备包括放置在内部并具有安装在其上的多个半导体元件3的基板2和具有空腔21的树脂模制件20。 模具20具有树脂注入口29a和空气释放口30a。 每个树脂注入口29a与相应的半导体元件3相关联地形成在模具中的空腔的顶表面部分中。 每个空气释放口30a形成在每个树脂注入口29a周围。

公开(公告)号：US07482701B2

公开(公告)日：2009-01-27

申请号：US11812154

申请日：2007-06-15

申请人： Tetsuo Ito ,  Takayuki Yoshida ,  Toshiyuki Fukuda ,  Takao Ochi

发明人： Tetsuo Ito ,  Takayuki Yoshida ,  Toshiyuki Fukuda ,  Takao Ochi

IPC分类号： H01L23/28

CPC分类号： H01L21/565 ,  B29C45/14655 ,  B29C45/2708 ,  B29C45/34 ,  H01L21/561 ,  H01L23/3121 ,  H01L24/45 ,  H01L24/48 ,  H01L24/97 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/15311 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2224/85 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753

摘要： A production equipment includes a substrate 2 placed inside and having a plurality of semiconductor elements 3 mounted thereon, and a resin molding mold 20 having a cavity 21. The mold 20 has resin injection ports 29a and air release ports 30a. Each of the resin injection ports 29a is formed in a top surface portion of the cavity in the mold in association with the corresponding semiconductor element 3. Each of the air release ports 30a is formed around each of the resin injection ports 29a.

摘要翻译： 制造设备包括放置在内部并具有安装在其上的多个半导体元件3的基板2和具有空腔21的树脂模制件20.模具20具有树脂注入口29a和空气释放口30a。 每个树脂注入口29a与相应的半导体元件3相关联地形成在模具中的空腔的顶表面部分中。每个空气释放口30a围绕每个树脂注入口29a形成。

公开(公告)号：US08125079B2

公开(公告)日：2012-02-28

申请号：US11806923

申请日：2007-06-05

申请人： Tetsuo Ito ,  Takayuki Yoshida ,  Toshiyuki Fukuda ,  Takao Ochi

发明人： Tetsuo Ito ,  Takayuki Yoshida ,  Toshiyuki Fukuda ,  Takao Ochi

IPC分类号： H01L23/34 ,  H01L21/00

CPC分类号： B29C45/0025 ,  B29C45/14655 ,  B29C45/2708 ,  B29C45/34 ,  B29C2045/0027 ,  H01L21/561 ,  H01L21/565 ,  H01L23/3121 ,  H01L23/3128 ,  H01L24/48 ,  H01L24/97 ,  H01L25/105 ,  H01L2224/48091 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2224/85 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A resin molding mold 20 with a cavity 21 has a resin injection port 29a from which a molding resin 25 is injected toward the cavity 21, and an air release port 30a from which air from the cavity 21 is released during resin injection. Not only the resin injection port 29a but also the air release port 30a is formed in a top surface portion 21a of the cavity 21. Thus, even if a resin burr remains in the resin injection port 29a or the air release port 30a, it can be prevented from adhering to an external terminal 4A provided on a front surface portion 2a of the substrate 2.

摘要翻译： 具有空腔21的树脂成型模具20具有树脂注入口29a，模塑树脂25从其注入腔21，在树脂注射期间从空腔21释放空气的空气释放口30a。 不仅在空腔21的上表面部分21a中形成树脂注入口29a而且还有空气释放口30a。因此，即使在树脂注入口29a或排气口30a中残留树脂毛刺，也可以 防止粘附到设置在基板2的前表面部分2a上的外部端子4A。

公开(公告)号：US20080029930A1

公开(公告)日：2008-02-07

申请号：US11806923

申请日：2007-06-05

申请人： Tetsuo Ito ,  Takayuki Yoshida ,  Toshiyuki Fukuda ,  Takao Ochi

发明人： Tetsuo Ito ,  Takayuki Yoshida ,  Toshiyuki Fukuda ,  Takao Ochi

IPC分类号： H01L21/60 ,  B29C45/03

CPC分类号： B29C45/0025 ,  B29C45/14655 ,  B29C45/2708 ,  B29C45/34 ,  B29C2045/0027 ,  H01L21/561 ,  H01L21/565 ,  H01L23/3121 ,  H01L23/3128 ,  H01L24/48 ,  H01L24/97 ,  H01L25/105 ,  H01L2224/48091 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2224/85 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A resin molding mold 20 with a cavity 21 has a resin injection port 29a from which a molding resin 25 is injected toward the cavity 21, and an air release port 30a from which air from the cavity 21 is released during resin injection. Not only the resin injection port 29a but also the air release port 30a is formed in a top surface portion 21a of the cavity 21. Thus, even if a resin burr remains in the resin injection port 29a or the air release port 30a, it can be prevented from adhering to an external terminal 4A provided on a front surface portion 2a of the substrate 2.

摘要翻译： 具有空腔21的树脂成型模具20具有树脂注入口29a，模塑树脂25从其注入空腔21，在树脂注射期间从空腔21释放空气的空气释放口30a。 不仅树脂注入口29a而且空气释放口30a形成在空腔21的顶表面部分21a中。 因此，即使树脂毛刺残留在树脂注入口29a或空气释放口30a中，也可以防止粘附到设置在基板2的前表面部分2a上的外部端子4A。

公开(公告)号：US08330188B2

公开(公告)日：2012-12-11

申请号：US13067721

申请日：2011-06-22

申请人： Takayuki Yoshida ,  Kimihito Kuwabara ,  Takuma Motofuji ,  Toshiyuki Fukuda

发明人： Takayuki Yoshida ,  Kimihito Kuwabara ,  Takuma Motofuji ,  Toshiyuki Fukuda

IPC分类号： H01L27/10 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L21/823807 ,  H01L21/823871 ,  H01L24/10 ,  H01L29/7842 ,  H01L2224/05001 ,  H01L2224/05023 ,  H01L2224/05026 ,  H01L2224/05548 ,  H01L2924/00014 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/13091 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/05099

摘要： A semiconductor device 20 formed on a semiconductor chip substrate 30 has a plurality of circuit blocks made up of circuits each containing at least a metal oxide semiconductor (MOS) transistor 36, the circuit blocks being covered on top with a protective film 41 to protect the circuits. A plurality of bumps 23a, 23b, 23c are formed, at least via the protective film 41, only on circuit blocks whose current-carrying ability and threshold voltage do not satisfy predetermined values and which are in need of performance enhancement. The bumps 23a, 23b, 23c impose stresses on the MOS transistors 36, increasing the mobility of the MOS transistors 36 and thereby improving the performance of the semiconductor device 20.

摘要翻译： 形成在半导体芯片基板30上的半导体装置20具有由至少包含金属氧化物半导体（MOS）晶体管36的电路构成的多个电路块，电路块由保护膜41覆盖在顶部，以保护 电路。 至少通过保护膜41仅形成多个凸起23a，23b，23c，其电流承载能力和阈值电压不满足预定值并且需要性能提高的电路块。 凸起23a，23b，23c在MOS晶体管36上施加应力，增加MOS晶体管36的迁移率，从而提高半导体器件20的性能。

公开(公告)号：US07985988B2

公开(公告)日：2011-07-26

申请号：US11898305

申请日：2007-09-11

申请人： Takayuki Yoshida ,  Kimihito Kuwabara ,  Takuma Motofuji ,  Toshiyuki Fukuda

发明人： Takayuki Yoshida ,  Kimihito Kuwabara ,  Takuma Motofuji ,  Toshiyuki Fukuda

IPC分类号： H01L27/10 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L21/823807 ,  H01L21/823871 ,  H01L24/10 ,  H01L29/7842 ,  H01L2224/05001 ,  H01L2224/05023 ,  H01L2224/05026 ,  H01L2224/05548 ,  H01L2924/00014 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/13091 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/05099

摘要： A semiconductor device 20 formed on a semiconductor chip substrate 30 has a plurality of circuit blocks made up of circuits each containing at least a metal oxide semiconductor (MOS) transistor 36, the circuit blocks being covered on top with a protective film 41 to protect the circuits. A plurality of bumps 23a, 23b, 23c are formed, at least via the protective film 41, only on circuit blocks whose current-carrying ability and threshold voltage do not satisfy predetermined values and which are in need of performance enhancement. The bumps 23a, 23b, 23c impose stresses on the MOS transistors 36, increasing the mobility of the MOS transistors 36 and thereby improving the performance of the semiconductor device 20.

摘要翻译： 形成在半导体芯片基板30上的半导体装置20具有由至少包含金属氧化物半导体（MOS）晶体管36的电路构成的多个电路块，电路块由保护膜41覆盖在顶部，以保护 电路。 至少通过保护膜41仅形成多个凸起23a，23b，23c，其电流承载能力和阈值电压不满足预定值并且需要性能提高的电路块。 凸起23a，23b，23c在MOS晶体管36上施加应力，增加MOS晶体管36的迁移率，从而提高半导体器件20的性能。

公开(公告)号：US20110254094A1

公开(公告)日：2011-10-20

申请号：US13067721

申请日：2011-06-22

申请人： Takayuki Yoshida ,  Kimihito Kuwabara ,  Takuma Motofuji ,  Toshiyuki Fukuda

发明人： Takayuki Yoshida ,  Kimihito Kuwabara ,  Takuma Motofuji ,  Toshiyuki Fukuda

IPC分类号： H01L29/772

CPC分类号： H01L21/823807 ,  H01L21/823871 ,  H01L24/10 ,  H01L29/7842 ,  H01L2224/05001 ,  H01L2224/05023 ,  H01L2224/05026 ,  H01L2224/05548 ,  H01L2924/00014 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/13091 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/05099

摘要： A semiconductor device 20 formed on a semiconductor chip substrate 30 has a plurality of circuit blocks made up of circuits each containing at least a metal oxide semiconductor (MOS) transistor 36, the circuit blocks being covered on top with a protective film 41 to protect the circuits. A plurality of bumps 23a, 23b, 23c are formed, at least via the protective film 41, only on circuit blocks whose current-carrying ability and threshold voltage do not satisfy predetermined values and which are in need of performance enhancement. The bumps 23a, 23b, 23c impose stresses on the MOS transistors 36, increasing the mobility of the MOS transistors 36 and thereby improving the performance of the semiconductor device 20.

摘要翻译： 形成在半导体芯片基板30上的半导体装置20具有由至少包含金属氧化物半导体（MOS）晶体管36的电路构成的多个电路块，电路块由保护膜41覆盖在顶部，以保护 电路。 至少通过保护膜41仅形成多个凸起23a，23b，23c，其电流承载能力和阈值电压不满足预定值并且需要性能提高的电路块。 凸起23a，23b，23c在MOS晶体管36上施加应力，增加MOS晶体管36的迁移率，从而提高半导体器件20的性能。

公开(公告)号：US20080061324A1

公开(公告)日：2008-03-13

申请号：US11898305

申请日：2007-09-11

申请人： Takayuki Yoshida ,  Kimihito Kuwabara ,  Takuma Motofuji ,  Toshiyuki Fukuda

发明人： Takayuki Yoshida ,  Kimihito Kuwabara ,  Takuma Motofuji ,  Toshiyuki Fukuda

IPC分类号： H01L29/04

CPC分类号： H01L21/823807 ,  H01L21/823871 ,  H01L24/10 ,  H01L29/7842 ,  H01L2224/05001 ,  H01L2224/05023 ,  H01L2224/05026 ,  H01L2224/05548 ,  H01L2924/00014 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/13091 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/05099

摘要： A semiconductor device 20 formed on a semiconductor chip substrate 30 has a plurality of circuit blocks made up of circuits each containing at least a metal oxide semiconductor (MOS) transistor 36, the circuit blocks being covered on top with a protective film 41 to protect the circuits. A plurality of bumps 23a, 23b, 23c are formed, at least via the protective film 41, only on circuit blocks whose current-carrying ability and threshold voltage do not satisfy predetermined values and which are in need of performance enhancement. The bumps 23a, 23b, 23c impose stresses on the MOS transistors 36, increasing the mobility of the MOS transistors 36 and thereby improving the performance of the semiconductor device 20.

摘要翻译： 形成在半导体芯片基板30上的半导体装置20具有由至少包含金属氧化物半导体（MOS）晶体管36的电路构成的多个电路块，电路块由保护膜41覆盖在顶部，以保护 电路。 至少通过保护膜41形成多个凸起23a，23b，23c，仅在载流能力和阈值电压不满足预定值并且需要性能提高的电路块上形成。 凸块23a，23b，23c对MOS晶体管36施加应力，增加MOS晶体管36的迁移率，从而提高半导体器件20的性能。

公开(公告)号：US08835443B2

公开(公告)日：2014-09-16

申请号：US12626443

申请日：2009-11-25

申请人： Hisashi Kawasaki ,  Hiroyuki Abe ,  Kazuhide Hayakawa ,  Tetsuya Iida ,  Shinichi Kikuchi ,  Takayuki Yamaguchi ,  Toyomichi Nanayama ,  Hironori Kurachi ,  Masahiro Tamaru ,  Yoshikazu Hori ,  Mitsuru Takahashi ,  Takayuki Yoshida ,  Toshiyuki Sakai

发明人： Hisashi Kawasaki ,  Hiroyuki Abe ,  Kazuhide Hayakawa ,  Tetsuya Iida ,  Shinichi Kikuchi ,  Takayuki Yamaguchi ,  Toyomichi Nanayama ,  Hironori Kurachi ,  Masahiro Tamaru ,  Yoshikazu Hori ,  Mitsuru Takahashi ,  Takayuki Yoshida ,  Toshiyuki Sakai

IPC分类号： A61K31/519 ,  C07D239/545 ,  C07D471/04 ,  C07D487/04

CPC分类号： C07D471/04 ,  A61K31/519 ,  C07C275/30 ,  C07C275/50 ,  C07C2601/16 ,  C07D239/545 ,  C07D239/553 ,  C07D239/62 ,  C07D471/16 ,  C07D487/04 ,  C07F9/53

摘要： The present invention relates to a pyrimidine compound or a pharmaceutically acceptable salt thereof represented by the following formula [I] wherein each symbol is as defined in the specification and a method of therapeutically or prophylactically treating an undesirable cell proliferation, comprising administering such a compound. The compound of the present invention has superior activity in suppressing undesirable cell proliferation, particularly, an antitumor activity, and is useful as an antitumor agent for the prophylaxis or treatment of cancer, rheumatism, and the like. In addition, the compound of the present invention can be a more effective antitumor agent when used in combination with other antitumor agents such as an alkylating agent or metabolism antagonist.

摘要翻译： 本发明涉及由下式[I]表示的嘧啶化合物或其药学上可接受的盐，其中每个符号如说明书中所定义，以及治疗或预防性治疗不期望的细胞增殖的方法，包括施用这种化合物。 本发明的化合物在抑制不期望的细胞增殖，特别是抗肿瘤活性方面具有优异的活性，可用作预防或治疗癌症，风湿病等的抗肿瘤剂。 此外，当与其它抗肿瘤剂如烷化剂或代谢拮抗剂组合使用时，本发明的化合物可以是更有效的抗肿瘤剂。

公开(公告)号：US20090294960A1

公开(公告)日：2009-12-03

申请号：US12368763

申请日：2009-02-10

申请人： Takayuki Yoshida

发明人： Takayuki Yoshida

IPC分类号： H01L23/485 ,  H01L23/48

CPC分类号： H01L24/73 ,  H01L23/49816 ,  H01L23/50 ,  H01L24/12 ,  H01L24/16 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L25/0657 ,  H01L2223/6611 ,  H01L2224/05554 ,  H01L2224/16145 ,  H01L2224/32145 ,  H01L2224/451 ,  H01L2224/48091 ,  H01L2224/48095 ,  H01L2224/48227 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2225/06555 ,  H01L2225/06562 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/09701 ,  H01L2924/15311 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2924/00015 ,  H01L2224/05599 ,  H01L2924/00012

摘要： A semiconductor device, including: a substrate having an upper face on which a first ground pad, a first power supply pad, a first signal pad, and a second signal pad are formed; a first substrate formed on the substrate and having an upper face on which a third signal pad connected to the first signal pad and a first circuit are formed; and a semiconductor element including a second substrate having a reverse face on which a bump electrode connected to the first circuit and a second circuit are formed and an upper face on which a fourth signal pad connected to the second signal pad is formed, with a signal through via connected to the second circuit and the fourth signal pad being buried in the second substrate.

摘要翻译： 一种半导体器件，包括：具有上表面的衬底，其上形成有第一接地焊盘，第一电源焊盘，第一信号焊盘和第二信号焊盘; 形成在所述基板上并具有上表面的第一基板，形成有连接到所述第一信号焊盘的第三信号焊盘和第一电路; 以及半导体元件，包括具有反面的第二基板，其上形成有连接到第一电路的凸起电极和第二电路，以及形成有与第二信号焊盘连接的第四信号焊盘的上表面，具有信号 通孔连接到第二电路，第四信号焊盘被埋在第二衬底中。