公开(公告)号：US08063433B2

公开(公告)日：2011-11-22

申请号：US12109340

申请日：2008-04-24

申请人： Tetsuya Ishimaru ,  Yasuhiro Shimamoto ,  Toshiyuki Mine ,  Yasunobu Aoki ,  Koichi Toba ,  Kan Yasui

发明人： Tetsuya Ishimaru ,  Yasuhiro Shimamoto ,  Toshiyuki Mine ,  Yasunobu Aoki ,  Koichi Toba ,  Kan Yasui

IPC分类号： H01L29/792

CPC分类号： H01L29/792 ,  H01L21/28282 ,  H01L29/42344 ,  H01L29/513 ,  H01L29/66833

摘要： A memory cell includes an ONO film composed of a stacked film of a silicon nitride film SIN which is a charge trapping portion and oxide films BOTOX and TOPOX positioned under and over the silicon nitride film, a memory gate electrode MG over the ONO film, a source region MS, and a drain region MD, and program or erase is performed by hot carrier injection in the memory cell. In the memory cell, a total concentration of N—H bonds and Si—H bonds contained in the silicon nitride film SIN is made to be 5×1020 cm−3 or less.

摘要翻译： 存储单元包括由作为电荷捕获部分的氮化硅膜SIN和位于氮化硅膜下面的氧化物膜BOTOX和TOPOX的叠层膜，ONO膜上的存储栅电极MG， 源区MS和漏区MD，并且通过在存储单元中的热载流子注入来执行编程或擦除。 在存储单元中，氮化硅膜SIN中包含的N-H键和Si-H键的总浓度为5×10 20 cm -3以下。

公开(公告)号：US20080265286A1

公开(公告)日：2008-10-30

申请号：US12109340

申请日：2008-04-24

申请人： Tetsuya ISHIMARU ,  Yasuhiro Shimamoto ,  Toshiyuki Mine ,  Yasunobu Aoki ,  Koichi Toba ,  Kan Yasui

发明人： Tetsuya ISHIMARU ,  Yasuhiro Shimamoto ,  Toshiyuki Mine ,  Yasunobu Aoki ,  Koichi Toba ,  Kan Yasui

IPC分类号： H01L29/76

CPC分类号： H01L29/792 ,  H01L21/28282 ,  H01L29/42344 ,  H01L29/513 ,  H01L29/66833

摘要： A memory cell includes an ONO film composed of a stacked film of a silicon nitride film SIN which is a charge trapping portion and oxide films BOTOX and TOPOX positioned under and over the silicon nitride film, a memory gate electrode MG over the ONO film, a source region MS, and a drain region MD, and program or erase is performed by hot carrier injection in the memory cell. In the memory cell, a total concentration of N—H bonds and Si—H bonds contained in the silicon nitride film SIN is made to be 5×1020 cm−3 or less.

摘要翻译： 存储单元包括由作为电荷捕获部分的氮化硅膜SIN和位于氮化硅膜下面的氧化物膜BOTOX和TOPOX的叠层膜，ONO膜上的存储栅电极MG， 源区MS和漏区MD，并且通过在存储单元中的热载流子注入来执行编程或擦除。 在存储单元中，氮化硅膜Sin中包含的N-H键和Si-H键的总浓度为5×10 20 -3 -3以下。

公开(公告)号：US09159843B2

公开(公告)日：2015-10-13

申请号：US13476356

申请日：2012-05-21

申请人： Kentaro Saito ,  Kazumasa Yanagisawa ,  Yasushi Ishii ,  Koichi Toba

发明人： Kentaro Saito ,  Kazumasa Yanagisawa ,  Yasushi Ishii ,  Koichi Toba

IPC分类号： H01L29/778 ,  H01L21/336 ,  H01L29/792 ,  H01L21/28 ,  H01L27/115 ,  H01L29/423 ,  H01L29/66 ,  G11C16/04

CPC分类号： H01L29/792 ,  G11C16/0466 ,  H01L21/28282 ,  H01L27/11573 ,  H01L29/4234 ,  H01L29/66833

摘要： To improve the electric performance and reliability of a semiconductor device. A memory gate electrode of a split gate type nonvolatile memory is a metal gate electrode formed from a stacked film of a metal film 6a and a silicon film 6b over the metal film 6a. In an upper end part of the metal film 6a, a metal oxide portion 17 is formed by oxidation of a part of the metal film 6a. A control gate electrode of the split gate type nonvolatile memory is a metal gate electrode formed from a stacked film of a metal film 4a and the silicon film 4b over the metal film 4a.

摘要翻译： 提高半导体器件的电气性能和可靠性。 分闸式非易失性存储器的存储栅极是由金属膜6a上的金属膜6a和硅膜6b的叠层膜形成的金属栅电极。 在金属膜6a的上端部分，通过氧化金属膜6a的一部分而形成金属氧化物部分17。 分闸式非易失性存储器的控制栅电极是由金属膜4a的叠层膜和金属膜4a上的硅膜4b形成的金属栅电极。

公开(公告)号：US08530958B2

公开(公告)日：2013-09-10

申请号：US12718002

申请日：2010-03-05

申请人： Koichi Toba ,  Yasushi Ishii ,  Yoshiyuki Kawashima ,  Satoru Machida ,  Munekatsu Nakagawa ,  Kentaro Saito ,  Toshikazu Matsui ,  Takashi Hashimoto ,  Kosuke Okuyama

发明人： Koichi Toba ,  Yasushi Ishii ,  Yoshiyuki Kawashima ,  Satoru Machida ,  Munekatsu Nakagawa ,  Kentaro Saito ,  Toshikazu Matsui ,  Takashi Hashimoto ,  Kosuke Okuyama

IPC分类号： H01L29/792

CPC分类号： H01L29/42324 ,  H01L21/28273 ,  H01L21/28282 ,  H01L27/115 ,  H01L27/11526 ,  H01L27/11531 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/7885

摘要： A semiconductor device having a non-volatile memory is disclosed, whose disturb defect can be diminished or prevented. A memory cell of the non-volatile memory has a memory gate electrode formed over a main surface of a semiconductor substrate through an insulating film for charge storage. A first side wall is formed on a side face of the memory gate electrode, and at a side face of the first side wall, a second side wall is formed. On an upper surface of an n+-type semiconductor region for source in the memory cell there is formed a silicide layer whose end portion on the memory gate electrode MG side is defined by the second side wall.

摘要翻译： 公开了一种具有非易失性存储器的半导体器件，其干扰缺陷可被减弱或防止。 非易失性存储器的存储单元具有通过用于电荷存储的绝缘膜形成在半导体衬底的主表面上的存储栅电极。 第一侧壁形成在存储栅电极的侧面上，在第一侧壁的侧面形成有第二侧壁。 在存储单元中用于源极的n +型半导体区域的上表面上形成硅化物层，其存储栅极电极MG侧的端部由第二侧壁限定。

公开(公告)号：US08258561B2

公开(公告)日：2012-09-04

申请号：US13307424

申请日：2011-11-30

申请人： Yoshiyuki Kawashima ,  Koichi Toba ,  Yasushi Ishii ,  Toshikazu Matsui ,  Takashi Hashimoto

发明人： Yoshiyuki Kawashima ,  Koichi Toba ,  Yasushi Ishii ,  Toshikazu Matsui ,  Takashi Hashimoto

IPC分类号： H01L27/08

CPC分类号： H01L28/60 ,  H01L27/0629 ,  H01L27/0805 ,  H01L27/105 ,  H01L27/10805 ,  H01L27/11526 ,  H01L27/11531 ,  H01L27/11573 ,  H01L28/40

摘要： In connection with a semiconductor device including a capacitor element there is provided a technique capable of improving the reliability of the capacitor element. A capacitor element is formed in an element isolation region formed over a semiconductor substrate. The capacitor element includes a lower electrode and an upper electrode formed over the lower electrode through a capacitor insulating film. Basically, the lower electrode and the upper electrode are formed from polysilicon films and a cobalt silicide film formed over the surfaces of the polysilicon films. End portions of the cobalt silicide film formed over the upper electrode are spaced apart a distance from end portions of the upper electrode. Besides, end portions of the cobalt silicide film formed over the lower electrode are spaced apart a distance from boundaries between the upper electrode and the lower electrode.

摘要翻译： 关于包括电容器元件的半导体器件，提供了一种能够提高电容器元件的可靠性的技术。 电容器元件形成在半导体衬底上形成的元件隔离区域中。 电容器元件包括通过电容器绝缘膜形成在下电极上的下电极和上电极。 基本上，下电极和上电极由形成在多晶硅膜的表面上的多晶硅膜和硅化钴膜形成。 形成在上电极上的钴硅化物膜的端部与上电极的端部间隔开一定距离。 此外，形成在下电极上的钴硅化物膜的端部与上电极和下电极之间的边界间隔一定距离。

公开(公告)号：US20100265303A1

公开(公告)日：2010-10-21

申请号：US12637395

申请日：2009-12-14

申请人： Yutaka Uehara ,  Mario Sato ,  Hiroshi Yamazaki ,  Koichi Toba

发明人： Yutaka Uehara ,  Mario Sato ,  Hiroshi Yamazaki ,  Koichi Toba

IPC分类号： B41J2/175

CPC分类号： B41J2/17553 ,  B41J2/17503 ,  B41J2/17506 ,  B41J2/17513

摘要： A method of refilling liquid into a cartridge according to the present invention is a method of liquid refilling, through which liquid is refilled into a used cartridge (1) in a liquid jet apparatus, comprising: a film removing process, in which an injection hole film (90) adhered around an air discharge opening (21), which communicates with the interior of the used cartridge (1), to seal the air discharge opening (21) is removed in order to make the air discharge opening (21) open; a liquid injecting process, in which liquid is injected into the used cartridge (1) through the air discharge opening (21) that has been made open in the injection hole film piercing process; and an injection hole film rewelding process, in which the film is rewelded using a surface other than an originally welded surface as a rewelded surface in order to seal again the air discharge opening (21), through which the liquid is injected in the liquid injecting process.

摘要翻译： 根据本发明的将液体重新注入到盒中的方法是一种液体再填充的方法，液体通过液体再填充到液体喷射装置中的用过的盒（1）中，包括：膜去除工艺，其中注入孔 粘附在与用过的盒（1）的内部连通的空气排放口（21）上以密封空气排放口（21）的薄膜（90）被移除，以使排气口（21）打开 ; 液体喷射过程，其中液体通过在注射孔膜穿孔过程中已经打开的排气口（21）注入到用过的盒（1）中; 以及注射孔膜再焊接工序，其中使用除原始焊接表面以外的表面再次焊接膜作为再焊接表面，以便再次密封空气排出口（21），液体注入液体注入液体 处理。

公开(公告)号：US20070228446A1

公开(公告)日：2007-10-04

申请号：US11717053

申请日：2007-03-13

申请人： Koichi Toba ,  Yasushi Ishii ,  Yoshiyuki Kawashima ,  Satoru Machida ,  Munekatsu Nakagawa ,  Kentaro Saito ,  Toshikazu Matsui ,  Takashi Hashimoto ,  Kosuke Okuyama

发明人： Koichi Toba ,  Yasushi Ishii ,  Yoshiyuki Kawashima ,  Satoru Machida ,  Munekatsu Nakagawa ,  Kentaro Saito ,  Toshikazu Matsui ,  Takashi Hashimoto ,  Kosuke Okuyama

IPC分类号： H01L29/76

CPC分类号： H01L29/42324 ,  H01L21/28273 ,  H01L21/28282 ,  H01L27/115 ,  H01L27/11526 ,  H01L27/11531 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/7885

摘要： A semiconductor device having a non-volatile memory is disclosed, whose disturb defect can be diminished or prevented. A memory cell of the non-volatile memory has a memory gate electrode formed over a main surface of a semiconductor substrate through an insulating film for charge storage. A first side wall is formed on a side face of the memory gate electrode, and at a side face of the first side wall, a second side wall is formed. On an upper surface of an n+-type semiconductor region for source in the memory cell there is formed a silicide layer whose end portion on the memory gate electrode MG side is defined by the second side wall.

摘要翻译： 公开了一种具有非易失性存储器的半导体器件，其干扰缺陷可被减弱或防止。 非易失性存储器的存储单元具有通过用于电荷存储的绝缘膜形成在半导体衬底的主表面上的存储栅电极。 第一侧壁形成在存储栅电极的侧面上，在第一侧壁的侧面形成有第二侧壁。 在存储单元中用于源极的n + + / - 型半导体区域的上表面上形成硅化物层，其存储栅电极MG侧的端部由第二侧壁限定。

公开(公告)号：US07195345B2

公开(公告)日：2007-03-27

申请号：US10879163

申请日：2004-06-30

申请人： Satoshi Shinada ,  Takeo Seino ,  Hisashi Miyazawa ,  Koichi Toba ,  Takahiro Naka ,  Minoru Usui ,  Atsushi Kobayashi ,  Hitoshi Hayakawa

发明人： Satoshi Shinada ,  Takeo Seino ,  Hisashi Miyazawa ,  Koichi Toba ,  Takahiro Naka ,  Minoru Usui ,  Atsushi Kobayashi ,  Hitoshi Hayakawa

IPC分类号： B41J2/175

CPC分类号： B41J2/175 ,  B41J2/17513 ,  B41J2/17523 ,  B41J2/17596

摘要： An ink cartridge for a printing apparatus providing ink to a print head through a tapered ink supply needle and removably attached to the print head. The ink cartridge comprises an ink chamber for containing ink, an ink supply port, a packing member and a valve device. The ink supply port supplies ink from the ink chamber to the print head of the printing apparatus, the ink supply port comprising an external opening. The packing member is provided in the ink supply port and forms an ink channel for allowing a flow of ink. The packing member seals the ink supply needle of the printing apparatus by fitting therewith. The valve device is contained in the ink supply port and elastically abuts against the packing member. The valve, device selectively opens and closes the ink channel in conjunction with the ink supply needle.

摘要翻译： 一种用于通过锥形供墨针向打印头提供墨水并可移除地附接到打印头的打印设备的墨盒。 墨盒包括用于容纳墨水的墨水室，供墨口，密封件和阀门装置。 供墨口将油墨从墨水室供给到打印装置的打印头，该供墨口包括外部开口。 填料构件设置在供墨口中并形成用于允许油墨流动的油墨通道。 包装部件通过与其配合来密封打印装置的供墨针。 阀装置容纳在供墨口中并且弹性地抵靠包装件。 阀，装置与供墨针一起选择性地打开和关闭墨水通道。

公开(公告)号：US07145194B2

公开(公告)日：2006-12-05

申请号：US10781861

申请日：2004-02-20

申请人： Akio Nishida ,  Hiraku Chakihara ,  Koichi Toba

发明人： Akio Nishida ,  Hiraku Chakihara ,  Koichi Toba

IPC分类号： H01L27/108

CPC分类号： G11C11/4125 ,  H01L27/105 ,  H01L27/11 ,  H01L27/1104 ,  H01L27/1116

摘要： In order to improve the soft error resistance of a memory cell of an SRAM without increasing its chip size, in deep through-holes formed by perforating a silicon oxide film, there is a silicon nitride film and a silicon oxide film, a capacitor element having a TiN film serving as a lower electrode, a silicon nitride film serving as an insulator and a TiN film as an upper electrode. This capacitor element is connected between a storage node and a supply voltage line, between a storage node and a reference voltage line, or between storage nodes of the memory cell of the SRAM.

摘要翻译： 为了提高SRAM的存储单元的软错误电阻而不增加其芯片尺寸，在通过穿透氧化硅膜形成的深通孔中，存在氮化硅膜和氧化硅膜，电容器元件具有 用作下电极的TiN膜，用作绝缘体的氮化硅膜和作为上电极的TiN膜。 该电容器元件连接在存储节点和电源电压线之间，存储节点和参考电压线之间，或SRAM的存储单元的存储节点之间。

公开(公告)号：US06929363B2

公开(公告)日：2005-08-16

申请号：US10270738

申请日：2002-10-16

申请人： Yasuto Sakai ,  Satoshi Shinada ,  Koichi Toba

发明人： Yasuto Sakai ,  Satoshi Shinada ,  Koichi Toba

IPC分类号： B41J2/175 ,  B65B31/02 ,  B65B31/04 ,  B65D81/20 ,  B41J29/13

CPC分类号： B41J2/17533

摘要： Creep is prevented in the ink cartridge engaging member resulting from the ink cartridge being vacuum packaged with unnecessary force applied to the engaging member. The ink cartridge vacuum package includes an ink cartridge and outside packaging. The ink cartridge has an ink cartridge body and a flexible engaging member. The engaging member projects away from the side of the ink cartridge body to which it is disposed. The outside packaging vacuum seals the ink cartridge inside while maintaining the engaging member in the same position as when force is not applied to the engaging member.

摘要翻译： 由于墨盒被真空包装而产生的墨盒接合构件中的蠕变被阻止施加到接合构件的不必要的力。 墨盒真空包装包括墨盒和外部包装。 墨盒具有墨盒主体和柔性接合构件。 接合构件远离其所在的墨盒体的一侧突出。 外部包装真空将墨盒密封在内部，同时将接合构件保持在与未被施加到接合构件的力相同的位置。