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公开(公告)号：US20100300888A1
公开(公告)日：2010-12-02
申请号：US12786329
申请日：2010-05-24
CPC分类号： C25D7/123 , C25D3/38 , C25D5/18 , C25D17/001
摘要： A plating protocol is employed to control plating of metal onto a wafer comprising a conductive seed layer. Initially, the protocol employs cathodic protection as the wafer is immersed in the plating solution. In certain embodiments, the current density of the wafer is constant during immersion. In a specific example, potentiostatic control is employed to produce a current density in the range of about 1.5 to 20 mA/cm2. The immersion step is followed by a high current pulse step. During bottom up fill inside the features of the wafer, a constant current or a current with a micropulse may be used. This protocol may protect the seed from corrosion while enhancing nucleation during the initial stages of plating.
摘要翻译： 使用电镀方案来控制金属镀在包含导电种子层的晶片上。 最初，当晶片浸入电镀溶液中时，协议采用阴极保护。 在某些实施例中，晶片的电流密度在浸入期间是恒定的。 在具体实例中，使用恒电位控制来产生约1.5至20mA / cm 2范围内的电流密度。 浸没步骤之后是高电流脉冲步骤。 在向下填充晶片的特征内部时，可以使用恒定电流或具有微脉冲的电流。 该方案可以保护种子免受腐蚀，同时在电镀初始阶段增强成核。
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公开(公告)号：US08500983B2
公开(公告)日：2013-08-06
申请号：US12786329
申请日：2010-05-24
CPC分类号： C25D7/123 , C25D3/38 , C25D5/18 , C25D17/001
摘要： A plating protocol is employed to control plating of metal onto a wafer comprising a conductive seed layer. Initially, the protocol employs cathodic protection as the wafer is immersed in the plating solution. In certain embodiments, the current density of the wafer is constant during immersion. In a specific example, potentiostatic control is employed to produce a current density in the range of about 1.5 to 20 mA/cm2. The immersion step is followed by a high current pulse step. During bottom up fill inside the features of the wafer, a constant current or a current with a micropulse may be used. This protocol may protect the seed from corrosion while enhancing nucleation during the initial stages of plating.
摘要翻译： 使用电镀方案来控制金属镀在包含导电种子层的晶片上。 最初，当晶片浸入电镀溶液中时，协议采用阴极保护。 在某些实施例中，晶片的电流密度在浸入期间是恒定的。 在具体实例中，使用恒电位控制来产生约1.5至20mA / cm 2范围内的电流密度。 浸没步骤之后是高电流脉冲步骤。 在向下填充晶片的特征内部时，可以使用恒定电流或具有微脉冲的电流。 该方案可以保护种子免受腐蚀，同时在电镀初始阶段增强成核。
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3.发明申请TREATMENT METHOD OF ELECTRODEPOSITED COPPER FOR WAFER-LEVEL-PACKAGING PROCESS FLOW 有权用于水平包装工艺流程的电沉积铜处理方法公开(公告)号：US20140197037A1
公开(公告)日：2014-07-17
申请号：US13744335
申请日：2013-01-17
IPC分类号： H05K3/00
CPC分类号： H01L24/11 , C25D3/38 , C25D3/60 , C25D5/10 , C25D5/50 , C25D17/00 , H01L21/2885 , H01L21/6723 , H01L24/03 , H01L24/05 , H01L24/13 , H01L2224/03462 , H01L2224/03848 , H01L2224/0401 , H01L2224/05548 , H01L2224/05647 , H01L2224/11334 , H01L2224/11849 , H01L2224/13111 , H01L2224/16503 , H01L2224/94 , H01L2924/01322 , H01L2924/12044 , H01L2924/3656 , H01L2224/03 , H01L2224/11 , H01L2924/00014 , H01L2924/00012 , H01L2924/01047 , H01L2924/01029 , H01L2924/00
摘要： A method of treating a copper containing structure on a substrate is disclosed. The method includes electrodepositing the copper containing structure on a substrate, annealing the copper containing structure, and forming an interface between a pad of the copper containing structure and a solder structure after anneal. The interface can have improved resistance to interfacial voiding. The copper containing structure is configured to deliver current between one or more ports and one or more solder structures in the integrated circuit package. Annealing the copper containing structure can move impurities and vacancies to the surface of the copper containing structure for subsequent removal.
摘要翻译： 公开了一种在衬底上处理含铜结构的方法。 该方法包括在基板上电沉积含铜结构，退火含铜结构，并在退火后形成含铜结构的焊盘和焊料结构之间的界面。 界面可以改善对界面空隙的抵抗力。 含铜结构被配置为在集成电路封装中的一个或多个端口与一个或多个焊料结构之间输送电流。 退火含铜结构可以将杂质和空位移动到含铜结构的表面以便随后除去。
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公开(公告)号：US08172992B2
公开(公告)日：2012-05-08
申请号：US12633219
申请日：2009-12-08
申请人： Vinay Prabhakar , Bryan L. Buckalew , Kousik Ganesan , Shantinath Ghongadi , Zhian He , Steven T. Mayer , Robert Rash , Jonathan D. Reid , Yuichi Takada , James R. Zibrida
发明人： Vinay Prabhakar , Bryan L. Buckalew , Kousik Ganesan , Shantinath Ghongadi , Zhian He , Steven T. Mayer , Robert Rash , Jonathan D. Reid , Yuichi Takada , James R. Zibrida
IPC分类号： C25B9/02
CPC分类号： C25D17/001 , C25D7/123
摘要： Methods, apparatuses, and various apparatus components, such as base plates, lipseals, and contact ring assemblies are provided for reducing contamination of the contact area in the apparatuses. Contamination may happen during removal of semiconductor wafers from apparatuses after the electroplating process. In certain embodiments, a base plate with a hydrophobic coating, such as polyamide-imide (PAI) and sometimes polytetrafluoroethylene (PTFE), are used. Further, contact tips of the contact ring assembly may be positioned further away from the sealing lip of the lipseal. In certain embodiments, a portion of the contact ring assembly and/or the lipseal also include hydrophobic coatings.
摘要翻译： 提供了诸如基板，密封圈和接触环组件的方法，装置和各种装置部件，以减少设备中接触区域的污染。 在电镀工艺之后从设备中取出半导体晶片时可能发生污染。 在某些实施方案中，使用具有疏水涂层的基板，例如聚酰胺 - 酰亚胺（PAI）和有时聚四氟乙烯（PTFE）。 此外，接触环组件的接触尖端可以被定位成更远离唇密封的唇缘。 在某些实施方案中，接触环组件和/或唇膏的一部分还包括疏水性涂层。
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公开(公告)号：US08858774B2
公开(公告)日：2014-10-14
申请号：US13438443
申请日：2012-04-03
IPC分类号： C25D17/00 , C25D21/12 , C25D7/12 , C25D5/18 , H01L21/288 , C25D17/12 , C25D21/10 , H01L21/768
CPC分类号： C25D5/00 , C25D5/04 , C25D5/18 , C25D7/123 , C25D17/001 , C25D17/002 , C25D17/007 , C25D17/008 , C25D17/06 , C25D17/12 , C25D21/10 , C25D21/12 , H01L21/2885 , H01L21/76873
摘要： Methods of electroplating metal on a substrate while controlling azimuthal uniformity, include, in one aspect, providing the substrate to the electroplating apparatus configured for rotating the substrate during electroplating, and electroplating the metal on the substrate while rotating the substrate relative to a shield such that a selected portion of the substrate at a selected azimuthal position dwells in a shielded area for a different amount of time than a second portion of the substrate having the same average arc length and the same average radial position and residing at a different angular (azimuthal) position. For example, a semiconductor wafer substrate can be rotated during electroplating slower or faster, when the selected portion of the substrate passes through the shielded area.
摘要翻译： 在一方面，在控制方位均匀性的同时，在基板上电镀金属的方法包括在电镀期间为电镀设备提供基板，该电镀设备被配置为在电镀期间旋转基板，以及在将基板相对于屏蔽件旋转的同时使金属电镀， 在选择的方位角位置的衬底的选定部分在屏蔽区域中停留不同于具有相同平均弧长和相同平均径向位置并且位于不同角度（方位角）处的基底的第二部分的时间量， 位置。 例如，当基板的选定部分通过屏蔽区域时，半导体晶片基板可以在电镀期间更快或更快地旋转。
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公开(公告)号：US20130292254A1
公开(公告)日：2013-11-07
申请号：US13852767
申请日：2013-03-28
申请人： Santosh Kumar , Bryan L. Buckalew , Steven T. Mayer , Thomas Ponnuswamy , Chad Michael Hosack , Robert Rash , Lee Peng Chua , David Porter
发明人： Santosh Kumar , Bryan L. Buckalew , Steven T. Mayer , Thomas Ponnuswamy , Chad Michael Hosack , Robert Rash , Lee Peng Chua , David Porter
IPC分类号： C25D17/00
CPC分类号： B08B3/022 , B08B3/041 , C25D7/12 , C25D17/00 , C25D17/001 , C25D21/00 , C25D21/12 , H01L21/67051
摘要： Disclosed herein are methods of cleaning a lipseal and/or cup bottom of an electroplating device by removing metal deposits accumulated in prior electroplating operations. The methods may include orienting a nozzle such that it is pointed substantially at the inner circular edge of the lipseal and/or cup bottom, and dispensing a stream of cleaning solution from the nozzle such that the stream contacts the inner circular edge of the lipseal and/or cup bottom while they are being rotated, removing metal deposits. In some embodiments, the stream has a velocity component against the rotational direction of the lipseal and/or cup bottom. In some embodiments, the deposits may include a tin/silver alloy. Also disclosed herein are cleaning apparatuses for mounting in electroplating devices and for removing electroplated metal deposits from their lipseals and/or cup bottoms. In some embodiments, the cleaning apparatuses may include a jet nozzle.
摘要翻译： 本文公开了通过去除在现有电镀操作中积累的金属沉积物来清洁电镀装置的唇密封和/或杯底的方法。 所述方法可以包括使喷嘴定向成使得其基本上指向唇密封件和/或杯底部的内圆形边缘，并且从喷嘴分配清洁溶液流，使得流接触唇塞的内圆形边缘，并且 /或杯底，同时旋转，去除金属沉积物。 在一些实施例中，流具有抵抗唇密封和/或杯底的旋转方向的速度分量。 在一些实施例中，沉积物可以包括锡/银合金。 本文还公开了用于安装在电镀装置中并用于从其密封件和/或杯底部去除电镀金属沉积物的清洁装置。 在一些实施例中，清洁设备可以包括喷嘴。
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公开(公告)号：US20120181170A1
公开(公告)日：2012-07-19
申请号：US13432767
申请日：2012-03-28
申请人： Vinay Prabhakar , Bryan L. Buckalew , Kousik Ganesan , Shantinath Ghongadi , Zhian He , Steven T. Mayer , Robert Rash , Jonathan D. Reid , Yuichi Takada , James R. Zibrida
发明人： Vinay Prabhakar , Bryan L. Buckalew , Kousik Ganesan , Shantinath Ghongadi , Zhian He , Steven T. Mayer , Robert Rash , Jonathan D. Reid , Yuichi Takada , James R. Zibrida
IPC分类号： C25D17/08
CPC分类号： C25D17/001 , C25D7/123
摘要： Methods, apparatuses, and various apparatus components, such as base plates, lipseals, and contact ring assemblies are provided for reducing contamination of the contact area in the apparatuses. Contamination may happen during removal of semiconductor wafers from apparatuses after the electroplating process. In certain embodiments, a base plate with a hydrophobic coating, such as polyamide-imide (PAI) and sometimes polytetrafluoroethylene (PTFE), are used. Further, contact tips of the contact ring assembly may be positioned further away from the sealing lip of the lipseal. In certain embodiments, a portion of the contact ring assembly and/or the lipseal also include hydrophobic coatings.
摘要翻译： 提供了诸如基板，密封圈和接触环组件的方法，装置和各种装置部件，以减少设备中接触区域的污染。 在电镀工艺之后从设备中取出半导体晶片时可能发生污染。 在某些实施方案中，使用具有疏水涂层的基板，例如聚酰胺 - 酰亚胺（PAI）和有时聚四氟乙烯（PTFE）。 此外，接触环组件的接触尖端可以被定位成更远离唇密封的唇缘。 在某些实施方案中，接触环组件和/或唇膏的一部分还包括疏水性涂层。
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公开(公告)号：US20100155254A1
公开(公告)日：2010-06-24
申请号：US12633219
申请日：2009-12-08
申请人： Vinay Prabhakar , Bryan L. Buckalew , Kousik Ganesan , Shantinath Ghongadi , Zhian He , Steven T. Mayer , Robert Rash , Jonathan D. Reid , Yuichi Takada , James R. Zibrida
发明人： Vinay Prabhakar , Bryan L. Buckalew , Kousik Ganesan , Shantinath Ghongadi , Zhian He , Steven T. Mayer , Robert Rash , Jonathan D. Reid , Yuichi Takada , James R. Zibrida
CPC分类号： C25D17/001 , C25D7/123
摘要： Methods, apparatuses, and various apparatus components, such as base plates, lipseals, and contact ring assemblies are provided for reducing contamination of the contact area in the apparatuses. Contamination may happen during removal of semiconductor wafers from apparatuses after the electroplating process. In certain embodiments, a base plate with a hydrophobic coating, such as polyamide-imide (PAI) and sometimes polytetrafluoroethylene (PTFE), are used. Further, contact tips of the contact ring assembly may be positioned further away from the sealing lip of the lipseal. In certain embodiments, a portion of the contact ring assembly and/or the lipseal also include hydrophobic coatings.
摘要翻译： 提供了诸如基板，密封圈和接触环组件的方法，装置和各种装置部件，以减少设备中接触区域的污染。 在电镀工艺之后从设备中取出半导体晶片时可能发生污染。 在某些实施方案中，使用具有疏水涂层的基板，例如聚酰胺 - 酰亚胺（PAI）和有时聚四氟乙烯（PTFE）。 此外，接触环组件的接触尖端可以被定位成更远离唇密封的唇缘。 在某些实施方案中，接触环组件和/或唇膏的一部分还包括疏水性涂层。
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公开(公告)号：US08217513B2
公开(公告)日：2012-07-10
申请号：US13019854
申请日：2011-02-02
申请人： George Andrew Antonelli , Jennifer O'Loughlin , Tony Xavier , Mandyam Sriram , Bart van Schravendijk , Vishwanathan Rangarajan , Seshasayee Varadarajan , Bryan L. Buckalew
发明人： George Andrew Antonelli , Jennifer O'Loughlin , Tony Xavier , Mandyam Sriram , Bart van Schravendijk , Vishwanathan Rangarajan , Seshasayee Varadarajan , Bryan L. Buckalew
IPC分类号： H01L23/34
CPC分类号： H01L21/02068 , C23C16/0245 , C23C16/54 , C23C16/56 , H01L21/0206 , H01L21/02074 , H01L21/02315 , H01L21/3105 , H01L21/67201 , H01L21/76826 , H01L21/76862 , H01L21/76883 , H01L2924/0002 , H01L2924/00
摘要： Embodiments related to the cleaning of interface surfaces in a semiconductor wafer fabrication process via remote plasma processing are disclosed herein. For example, in one disclosed embodiment, a semiconductor processing apparatus includes a processing chamber, a load lock coupled to the processing chamber via a transfer port, a wafer pedestal disposed in the load lock and configured to support a wafer in the load lock, a remote plasma source configured to provide a remote plasma to the load lock, and an ion filter disposed between the remote plasma source and the wafer pedestal.
摘要翻译： 本文公开了通过远程等离子体处理在半导体晶片制造工艺中清洁界面的实施例。 例如，在一个所公开的实施例中，半导体处理装置包括处理室，经由传送端口与处理室耦合的负载锁定，设置在负载锁中并被配置为支撑加载锁中的晶片的晶片基座， 远程等离子体源，被配置为将远程等离子体提供给负载锁定;以及离子过滤器，其布置在远程等离子体源和晶片基座之间。
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公开(公告)号：US08084339B2
公开(公告)日：2011-12-27
申请号：US12484047
申请日：2009-06-12
申请人： George Andrew Antonelli , Jennifer O'Loughlin , Tony Xavier , Mandyam Sriram , Bart Van Schravendijk , Vishwanathan Rangarajan , Seshasayee Varadarajan , Bryan L. Buckalew
发明人： George Andrew Antonelli , Jennifer O'Loughlin , Tony Xavier , Mandyam Sriram , Bart Van Schravendijk , Vishwanathan Rangarajan , Seshasayee Varadarajan , Bryan L. Buckalew
IPC分类号： H01L21/261
CPC分类号： H01L21/02068 , C23C16/0245 , C23C16/54 , C23C16/56 , H01L21/0206 , H01L21/02074 , H01L21/02315 , H01L21/3105 , H01L21/67201 , H01L21/76826 , H01L21/76862 , H01L21/76883 , H01L2924/0002 , H01L2924/00
摘要： Embodiments related to the cleaning of interface surfaces in a semiconductor wafer fabrication process via remote plasma processing are disclosed herein. For example, in one disclosed embodiment, a semiconductor processing apparatus includes a processing chamber, a load lock coupled to the processing chamber via a transfer port, a wafer pedestal disposed in the load lock and configured to support a wafer in the load lock, a remote plasma source configured to provide a remote plasma to the load lock, and an ion filter disposed between the remote plasma source and the wafer pedestal.
摘要翻译： 本文公开了通过远程等离子体处理在半导体晶片制造工艺中清洁界面的实施例。 例如，在一个所公开的实施例中，半导体处理装置包括处理室，经由传送端口与处理室耦合的负载锁定，设置在负载锁中并被配置为支撑加载锁中的晶片的晶片基座， 远程等离子体源，被配置为将远程等离子体提供给负载锁定;以及离子过滤器，其布置在远程等离子体源和晶片基座之间。
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