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公开(公告)号：US08940444B2
公开(公告)日：2015-01-27
申请号：US13476951
申请日：2012-05-21
IPC分类号： H01M10/0562 , H01M4/04 , B82Y30/00 , H01M4/60 , H01M4/64 , H01M4/66 , H01M10/0565
CPC分类号： H01M4/04 , B82Y30/00 , G02F1/155 , H01M4/0416 , H01M4/1399 , H01M4/60 , H01M4/602 , H01M4/64 , H01M4/66 , H01M4/661 , H01M10/052 , H01M10/0525 , H01M10/054 , H01M10/0562 , H01M10/0565 , H01M2220/20 , Y02E60/122 , Y02P70/54 , Y02T10/7011 , Y10S977/734 , Y10S977/742 , Y10S977/773 , Y10S977/81 , Y10S977/811
摘要： Hybrid radical energy storage devices, such as batteries or electrochemical devices, and methods of use and making are disclosed. Also described herein are electrodes and electrolytes useful in energy storage devices, for example, radical polymer cathode materials and electrolytes for use in organic radical batteries.
摘要翻译： 公开了诸如电池或电化学装置的混合自由基能量存储装置，以及使用和制造方法。 本文还描述了可用于储能装置的电极和电解质，例如用于有机基团电池的自由基聚合物阴极材料和电解质。
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公开(公告)号：US09324992B2
公开(公告)日：2016-04-26
申请号：US14484420
申请日：2014-09-12
IPC分类号： H01M10/0562 , H01M4/04 , B82Y30/00 , H01M10/0565 , H01M4/60 , H01M10/052 , H01M10/054 , G02F1/155 , H01M4/1399 , H01M10/0525 , H01M4/64 , H01M4/66
CPC分类号： H01M4/04 , B82Y30/00 , G02F1/155 , H01M4/0416 , H01M4/1399 , H01M4/60 , H01M4/602 , H01M4/64 , H01M4/66 , H01M4/661 , H01M10/052 , H01M10/0525 , H01M10/054 , H01M10/0562 , H01M10/0565 , H01M2220/20 , Y02E60/122 , Y02P70/54 , Y02T10/7011 , Y10S977/734 , Y10S977/742 , Y10S977/773 , Y10S977/81 , Y10S977/811
摘要： Hybrid radical energy storage devices, such as batteries or electrochemical devices, and methods of use and making are disclosed. Also described herein are electrodes and electrolytes useful in energy storage devices, for example, radical polymer cathode materials and electrolytes for use in organic radical batteries.
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公开(公告)号：US08329502B2
公开(公告)日：2012-12-11
申请号：US12904959
申请日：2010-10-14
申请人： David S. Ginley , John Perkins , Joseph Berry , Thomas Gennett
发明人： David S. Ginley , John Perkins , Joseph Berry , Thomas Gennett
IPC分类号： H01L23/532 , H01L21/283
CPC分类号： H01L31/02366 , B81B2203/0361 , B81C1/0038 , C23C14/046 , C23C14/086 , C23C14/34 , H01L31/022483 , Y02E10/50
摘要： Method of applying a conformal coating to a highly structured substrate and devices made by the disclosed methods are disclosed. An example method includes the deposition of a substantially contiguous layer of a material upon a highly structured surface within a deposition process chamber. The highly structured surface may be associated with a substrate or another layer deposited on a substrate. The method includes depositing a material having an amorphous structure on the highly structured surface at a deposition pressure of equal to or less than about 3 mTorr. The method may also include removing a portion of the amorphous material deposited on selected surfaces and depositing additional amorphous material on the highly structured surface.
摘要翻译： 公开了将共形涂层施加到高度结构化的衬底上的方法和通过公开的方法制造的器件。 一种示例性方法包括将沉积处理室内的高度结构化表面的基本上邻接的材料层沉积。 高度结构化的表面可以与沉积在基底上的基底或另一层相关联。 该方法包括以等于或小于约3mTorr的沉积压力将具有非晶结构的材料沉积在高度结构化的表面上。 该方法还可以包括去除沉积在选定表面上的非晶材料的一部分，并在高度结构化的表面上沉积额外的无定形材料。
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4.发明申请公开(公告)号：US20120160663A1
公开(公告)日：2012-06-28
申请号：US13324835
申请日：2011-12-13
申请人： Dane GILLASPIE , Thomas Gennett , David S. Ginley , John Perkins
发明人： Dane GILLASPIE , Thomas Gennett , David S. Ginley , John Perkins
IPC分类号： C23C14/34
CPC分类号： C23C14/086 , C23C14/0057 , C23C14/5806
摘要： Sputtering deposition processes for generation of transparent conductive metal oxide films, and films produced by such methods, are disclosed.
摘要翻译： 公开了用于产生透明导电金属氧化物膜的溅射沉积工艺，以及通过这些方法生产的膜。
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公开(公告)号：US20120091586A1
公开(公告)日：2012-04-19
申请号：US12904959
申请日：2010-10-14
申请人： David S. Ginley , John Perkins , Joseph Berry , Thomas Gennett
发明人： David S. Ginley , John Perkins , Joseph Berry , Thomas Gennett
IPC分类号： H01L23/532 , H01L21/283
CPC分类号： H01L31/02366 , B81B2203/0361 , B81C1/0038 , C23C14/046 , C23C14/086 , C23C14/34 , H01L31/022483 , Y02E10/50
摘要： Method of applying a conformal coating to a highly structured substrate and devices made by the disclosed methods are disclosed. An example method includes the deposition of a substantially contiguous layer of a material upon a highly structured surface within a deposition process chamber. The highly structured surface may be associated with a substrate or another layer deposited on a substrate. The method includes depositing a material having an amorphous structure on the highly structured surface at a deposition pressure of equal to or less than about 3 mTorr. The method may also include removing a portion of the amorphous material deposited on selected surfaces and depositing additional amorphous material on the highly structured surface.
摘要翻译： 公开了将共形涂层施加到高度结构化的衬底上的方法和通过公开的方法制造的器件。 一种示例性方法包括将沉积处理室内的高度结构化表面的基本上邻接的材料层沉积。 高度结构化的表面可以与沉积在基底上的基底或另一层相关联。 该方法包括以等于或小于约3mTorr的沉积压力将具有非晶结构的材料沉积在高度结构化的表面上。 该方法还可以包括去除沉积在选定表面上的非晶材料的一部分，并在高度结构化的表面上沉积额外的无定形材料。
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公开(公告)号：US09409111B2
公开(公告)日：2016-08-09
申请号：US13130109
申请日：2008-11-21
IPC分类号： B01J20/06 , B01J20/08 , B01J20/28 , B01J20/32 , B82Y30/00 , B01D39/16 , B01D39/18 , B01D39/20
CPC分类号： B01D39/1676 , B01D39/18 , B01D39/2062 , B01D39/2082 , B01D2239/025 , B01D2239/0407 , B01D2239/0442 , B01D2239/064 , B01D2239/10 , B01D2239/1233 , B01D2239/1291 , B01D2253/104 , B01D2253/112 , B01D2257/60 , B01D2257/91 , B01J20/06 , B01J20/08 , B01J20/28007 , B01J20/28042 , B01J20/28061 , B01J20/3204 , B01J20/3206 , B01J20/3236 , B82Y30/00
摘要： Porous block nano-fiber composite (110), a filtration system (10) and methods of using the same are disclosed. An exemplary porous block nano-fiber composite (110) includes a porous block (100) having one or more pores (200). The porous block nano-fiber composite (110) also includes a plurality of inorganic nano-fibers (211) formed within at least one of the pores (200).
摘要翻译： 公开了多孔嵌段纳米纤维复合材料（110），过滤系统（10）及其使用方法。 示例性多孔嵌段纳米纤维复合材料（110）包括具有一个或多个孔（200）的多孔块（100）。 多孔嵌段纳米纤维复合材料（110）还包括在至少一个孔（200）内形成的多个无机纳米纤维（211）。
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7.发明授权Liquid precursor inks for deposition of In—Se, Ga—Se and In—Ga—Se 有权用于沉积In-Se，Ga-Se和In-Ga-Se的液体前体油墨公开(公告)号：US09105797B2
公开(公告)日：2015-08-11
申请号：US13602454
申请日：2012-09-04
申请人： Calvin J. Curtis , Peter A. Hersh , Alexander Miedaner , Susan Habas , Maikel van Hest , David S. Ginley
发明人： Calvin J. Curtis , Peter A. Hersh , Alexander Miedaner , Susan Habas , Maikel van Hest , David S. Ginley
IPC分类号： H01B1/12 , H01L21/00 , H01L31/18 , H01L31/0216 , H01L31/032 , H01L31/0392
CPC分类号： H01L31/18 , H01L31/02167 , H01L31/0322 , H01L31/03923 , Y02E10/541
摘要： An ink includes a solution of selenium in ethylene diamine solvent and a solution of at least one metal salt selected from the group consisting of an indium salt or a gallium salt in at least one solvent including an organic amide. The organic amide can include dimethylformamide. The organic amide can include N-methylpyrrolidone.
摘要翻译： 油墨包括硒在乙二胺溶剂中的溶液和至少一种选自铟盐或镓盐的金属盐在至少一种包括有机酰胺的溶剂中的溶液。 有机酰胺可以包括二甲基甲酰胺。 有机酰胺可以包括N-甲基吡咯烷酮。
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公开(公告)号：US20120129332A1
公开(公告)日：2012-05-24
申请号：US13273588
申请日：2011-10-14
申请人： Erik REDDINGTON , Thomas C. Sutter , Lujia Bu , Alexandra Perras , Susan E. Habas , Calvin J. Curtis , Alexander Miedaner , David S. Ginley , Marinus Franciscus Antonius Maria Van Hest
发明人： Erik REDDINGTON , Thomas C. Sutter , Lujia Bu , Alexandra Perras , Susan E. Habas , Calvin J. Curtis , Alexander Miedaner , David S. Ginley , Marinus Franciscus Antonius Maria Van Hest
IPC分类号： H01L21/28
CPC分类号： H01L31/022425 , C09D11/322 , C09D11/52 , Y02E10/50
摘要： Methods of forming metal contacts with metal inks in the manufacture of photovoltaic devices are disclosed. The metal inks are selectively deposited on semiconductor coatings by inkjet and aerosol apparatus. The composite is heated to selective temperatures where the metal inks burn through the coating to form an electrical contact with the semiconductor. Metal layers are then deposited on the electrical contacts by light induced or light assisted plating.
摘要翻译： 公开了在制造光伏器件中与金属油墨形成金属接触的方法。 金属油墨通过喷墨和气溶胶装置选择性地沉积在半导体涂层上。 将复合材料加热至选择性温度，其中金属油墨通过涂层燃烧以与半导体形成电接触。 然后通过光诱导或光辅助电镀将金属层沉积在电触点上。
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9.发明申请Formation of Copper-Indium-Selenide and/or Copper-Indium-Gallium-Selenide Films from Indium Selenide and Copper Selenide Precursors 有权从硒化铟和硒化铜前体形成铜 - 硒化铟和/或铜 - 铟 - 硒 - 硒化物膜公开(公告)号：US20090280598A1
公开(公告)日：2009-11-12
申请号：US11813474
申请日：2006-11-09
IPC分类号： H01L21/10
摘要： Liquid-based indium selenide and copper selenide precursors, including copper-organoselenides, particulate copper selenide suspensions, copper selenide ethylene diamine in liquid solvent, nanoparticlulate indium selenide suspensions, and indium selenide ethylene diamine coordination compounds in solvent, are used to form crystalline copper-indium-selenide, and/or copper indium galium selenide films (66) on substrates (52).
摘要翻译： 使用液体硒化铟和硒化铜前体，包括铜有机硒化物，颗粒状硒化铜悬浮液，硒溶液中乙二胺在液体溶剂中，纳米颗粒硒化铟悬浮液和硒化铟乙二胺配位化合物在溶剂中形成结晶铜 - 硒化铟和/或铜铟镓硒膜（66）。
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公开(公告)号：US5356516A
公开(公告)日：1994-10-18
申请号：US23286
申请日：1993-02-26
申请人： Carol I. H. Ashby , David S. Ginley
发明人： Carol I. H. Ashby , David S. Ginley
CPC分类号： H01L39/2467 , C04B41/5353
摘要： An etching process using dicarboxylic and tricarboxylic acids as chelating etchants for mixed metal oxide films such as high temperature superconductors and ferroelectric materials. Undesirable differential etching rates between different metal oxides are avoided by selection of the proper acid or combination of acids. Feature sizes below one micron, excellent quality vertical edges, and film thicknesses in the 100 Angstom range may be achieved by this method.
摘要翻译： 使用二羧酸和三羧酸作为混合金属氧化物膜如高温超导体和铁电材料的螯合蚀刻剂的蚀刻方法。 通过选择合适的酸或酸的组合来避免不同金属氧化物之间的不良蚀刻速率。 通过该方法可以实现低于1微米的特征尺寸，优异的垂直边缘和100埃的范围内的膜厚度。
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