公开(公告)号：US20130042801A1

公开(公告)日：2013-02-21

申请号：US13210138

申请日：2011-08-15

申请人： Thomas Gmitter ,  Gang He ,  Melissa Archer ,  Siew Neo

发明人： Thomas Gmitter ,  Gang He ,  Melissa Archer ,  Siew Neo

IPC分类号： C30B19/00 ,  C30B23/02 ,  C22C28/00 ,  C30B25/02

CPC分类号： C22C29/00 ,  C30B29/00 ,  C30B29/40 ,  C30B29/42 ,  C30B33/06 ,  C30B33/08 ,  C30B33/10

摘要： Embodiments described herein provide processes for forming and removing epitaxial films and materials from growth wafers by epitaxial lift off (ELO) processes. In some embodiments, the growth wafer has edge surfaces with an off-axis orientation which is utilized during the ELO process. The off-axis orientation of the edge surface provides an additional variable for controlling the etch rate during the ELO process- and therefore the etch front may be modulated to prevent the formation of high stress points which reduces or prevents stressing and cracking the epitaxial film stack. In one embodiment, the growth wafer is rectangular and has an edge surface with an off-axis orientation rotated by an angle greater than 0° and up to 90° relative to an edge orientation of at 0°.

摘要翻译： 本文描述的实施例提供了通过外延剥离（ELO）工艺从生长晶片形成和去除外延膜和材料的工艺。 在一些实施例中，生长晶片具有在ELO过程期间被利用的离轴取向的边缘表面。 边缘表面的离轴取向提供了用于控制ELO工艺期间的蚀刻速率的附加变量，因此可以调制蚀刻前沿以防止形成高应力点，从而减少或防止外延膜堆叠的应力和破裂 。 在一个实施例中，生长晶片是矩形的并且具有在0°时相对于<110>的边缘取向大于0°并且高达90°的离轴取向的边缘表面。

公开(公告)号：US09994936B2

公开(公告)日：2018-06-12

申请号：US13210138

申请日：2011-08-15

申请人： Thomas Gmitter ,  Gang He ,  Melissa Archer ,  Siew Neo

发明人： Thomas Gmitter ,  Gang He ,  Melissa Archer ,  Siew Neo

IPC分类号： C30B19/00 ,  C22C29/00 ,  C30B33/06 ,  C30B29/42 ,  C30B29/40 ,  C30B33/08 ,  C30B29/00 ,  C30B33/10

CPC分类号： C22C29/00 ,  C30B29/00 ,  C30B29/40 ,  C30B29/42 ,  C30B33/06 ,  C30B33/08 ,  C30B33/10

摘要： Embodiments described herein provide processes for forming and removing epitaxial films and materials from growth wafers by epitaxial lift off (ELO) processes. In some embodiments, the growth wafer has edge surfaces with an off-axis orientation which is utilized during the ELO process. The off-axis orientation of the edge surface provides an additional variable for controlling the etch rate during the ELO process- and therefore the etch front may be modulated to prevent the formation of high stress points which reduces or prevents stressing and cracking the epitaxial film stack. In one embodiment, the growth wafer is rectangular and has an edge surface with an off-axis orientation rotated by an angle greater than 0° and up to 90° relative to an edge orientation of at 0°.

公开(公告)号：US20090321885A1

公开(公告)日：2009-12-31

申请号：US12475411

申请日：2009-05-29

申请人： Melissa Archer ,  Harry Atwater ,  Thomas Gmitter ,  Gang He ,  Andreas Hegedus ,  Gregg Higashi ,  Stewart Sonnenfeldt

发明人： Melissa Archer ,  Harry Atwater ,  Thomas Gmitter ,  Gang He ,  Andreas Hegedus ,  Gregg Higashi ,  Stewart Sonnenfeldt

IPC分类号： H01L29/06 ,  H01L21/20

CPC分类号： H01L21/7813 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/30612 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/7806 ,  H01L2221/6835 ,  H01L2221/68381

摘要： Embodiments of the invention generally relate to epitaxial lift off (ELO) thin films and devices and methods used to form such films and devices. In one embodiment, a method for forming an ELO thin film is provided which includes depositing an epitaxial material over a sacrificial layer on a substrate, adhering a universally shrinkable support handle onto the epitaxial material, wherein the universally shrinkable support handle contains a shrinkable material, and shrinking the support handle to form tension in the support handle and compression in the epitaxial material during a shrinking process. The method further includes removing the sacrificial layer during an etching process, peeling the epitaxial material from the substrate while forming an etch crevice therebetween, and bending the support handle to have substantial curvature.

摘要翻译： 本发明的实施例一般涉及外延剥离（ELO）薄膜，以及用于形成这种膜和装置的装置和方法。 在一个实施例中，提供了一种用于形成ELO薄膜的方法，其包括在衬底上的牺牲层上沉积外延材料，将普遍可收缩的支撑手柄附着在外延材料上，其中普遍可收缩的支撑手柄包含可收缩材料， 并且收缩支撑手柄以在收缩过程中在支撑手柄中形成张力并在外延材料中压缩。 该方法还包括在蚀刻工艺期间去除牺牲层，在衬底之间形成蚀刻缝隙并将支撑柄弯曲成具有实质曲率的同时从衬底剥离外延材料。

公开(公告)号：US09070764B2

公开(公告)日：2015-06-30

申请号：US12475406

申请日：2009-05-29

申请人： Melissa Archer ,  Harry Atwater ,  Thomas Gmitter ,  Gang He ,  Andreas Hegedus ,  Gregg Higashi ,  Stewart Sonnenfeldt

发明人： Melissa Archer ,  Harry Atwater ,  Thomas Gmitter ,  Gang He ,  Andreas Hegedus ,  Gregg Higashi ,  Stewart Sonnenfeldt

IPC分类号： H01L21/78 ,  H01L21/683

CPC分类号： H01L21/7813 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/30612 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/7806 ,  H01L2221/6835 ,  H01L2221/68381

摘要： Embodiments of the invention generally relate to epitaxial lift off (ELO) thin films and devices and methods used to form such films and devices. In one embodiment, a method for forming an ELO thin film is provided which includes depositing an epitaxial material over a sacrificial layer on a substrate, adhering a flattened, pre-curved support handle onto the epitaxial material, and removing the sacrificial layer during an etching process. The etching process includes bending the pre-curved support handle to have substantial curvature while peeling the epitaxial material from the substrate and forming an etch crevice therebetween. Compression is maintained within the epitaxial material during the etching process. The flattened, pre-curved support handle may be formed by flattening a pre-curved support material.

摘要翻译： 本发明的实施例一般涉及外延剥离（ELO）薄膜，以及用于形成这种膜和装置的装置和方法。 在一个实施例中，提供了一种用于形成ELO薄膜的方法，其包括在衬底上的牺牲层上沉积外延材料，将平坦化的预弯曲支撑手柄粘附到外延材料上，以及在蚀刻期间去除牺牲层 处理。 蚀刻工艺包括弯曲预弯曲的支撑手柄以具有相当大的曲率，同时从衬底剥离外延材料并在其间形成蚀刻缝隙。 在蚀刻过程中压缩保持在外延材料内。 扁平的预弯曲的支撑手柄可以通过使预弯曲的支撑材料变平而形成。

公开(公告)号：US20100151689A1

公开(公告)日：2010-06-17

申请号：US12640796

申请日：2009-12-17

申请人： Thomas Gmitter ,  Gang He ,  Melissa Archer ,  Andreas Hegedus

发明人： Thomas Gmitter ,  Gang He ,  Melissa Archer ,  Andreas Hegedus

IPC分类号： H01L21/306 ,  C23F1/08

CPC分类号： H01L21/7813 ,  H01L21/30612 ,  H01L21/67086 ,  H01L21/67092 ,  H01L21/67132 ,  H01L21/6835 ,  H01L21/6836 ,  H01L31/184 ,  H01L2221/68318 ,  H01L2221/68345 ,  H01L2221/68381 ,  H01L2221/6839

摘要： Embodiments of the invention generally relate to apparatuses and methods for producing epitaxial thin films and devices by epitaxial lift off (ELO) processes. In one embodiment, a method for forming thin film devices during an ELO process is provided which includes coupling a plurality of substrates to an elongated support tape, wherein each substrate contains an epitaxial film disposed over a sacrificial layer disposed over a wafer, exposing the substrates to an etchant during an etching process while moving the elongated support tape, and etching the sacrificial layers and peeling the epitaxial films from the wafers while moving the elongated support tape. Embodiments also include several apparatuses, continuous-type as well as a batch-type apparatuses, for forming the epitaxial thin films and devices, including an apparatus for removing the support tape and epitaxial films from the wafers on which the epitaxial films were grown.

摘要翻译： 本发明的实施例一般涉及通过外延剥离（ELO）工艺制造外延薄膜和器件的装置和方法。 在一个实施例中，提供了一种在ELO工艺期间形成薄膜器件的方法，其包括将多个衬底耦合到细长支撑带，其中每个衬底包含设置在设置在晶片上方的牺牲层上的外延膜， 在移动细长的支撑带的同时蚀刻过程中的蚀刻剂，以及蚀刻牺牲层并在移动细长支撑带的同时从晶片剥离外延膜。 实施例还包括几种用于形成外延薄膜和器件的连续型和间歇式器件的装置，包括用于从其上生长外延膜的晶片去除支撑带和外延膜的装置。

公开(公告)号：US09165805B2

公开(公告)日：2015-10-20

申请号：US12640796

申请日：2009-12-17

申请人： Thomas Gmitter ,  Gang He ,  Melissa Archer ,  Andreas Hegedus

发明人： Thomas Gmitter ,  Gang He ,  Melissa Archer ,  Andreas Hegedus

IPC分类号： C23F1/08 ,  H01L21/67 ,  H01L21/683

CPC分类号： H01L21/7813 ,  H01L21/30612 ,  H01L21/67086 ,  H01L21/67092 ,  H01L21/67132 ,  H01L21/6835 ,  H01L21/6836 ,  H01L31/184 ,  H01L2221/68318 ,  H01L2221/68345 ,  H01L2221/68381 ,  H01L2221/6839

摘要： An apparatus or method for forming a tape-based, epitaxial lift-off film. The epitaxial lift-off film can be for at least one of a solar device, a semiconductor device, and an electronic device. The apparatus can comprise: a tape supply section, the tape supply section providing an unloaded support tape; a lamination section for receiving the unloaded support tape and a plurality of substrates, each substrate containing an epitaxial film thereon, the lamination section adhering the substrates to the unloaded support tape to form a loaded support tape; and an ELO etch section comprising a pressure system for applying pressure on said loaded support tape such that pressure is applied progressively downward and progressively towards a center-line of said loaded support tape when passing through said ELO etch section, the ELO etch section removing the substrates from the loaded support tape, while leaving the epitaxial film on the loaded support tape.

摘要翻译： 用于形成基于带的外延剥离膜的装置或方法。 外延剥离膜可以用于太阳能装置，半导体装置和电子装置中的至少一个。 所述装置可以包括：带供应部分，所述带供应部分提供卸载的支撑带; 用于接收未加载的支撑带和多个基板的层压部分，每个基板在其上包含外延膜，所述层压部分将基板粘附到未加载的支撑带上以形成装载的支撑带; 以及ELO蚀刻部分，其包括用于在所述加载的支撑带上施加压力的压力系统，使得当通过所述ELO蚀刻部分时，压力逐渐向下并逐渐朝着所述负载的支撑带的中心线施加，ELO蚀刻部分移除 同时将外延膜留在装载的支撑带上。

公开(公告)号：US08309432B2

公开(公告)日：2012-11-13

申请号：US12475411

申请日：2009-05-29

申请人： Melissa Archer ,  Harry Atwater ,  Thomas Gmitter ,  Gang He ,  Andreas Hegedus ,  Gregg Higashi ,  Stewart Sonnenfeldt

发明人： Melissa Archer ,  Harry Atwater ,  Thomas Gmitter ,  Gang He ,  Andreas Hegedus ,  Gregg Higashi ,  Stewart Sonnenfeldt

IPC分类号： H01L21/30 ,  H01L21/46 ,  H01L21/302 ,  H01L21/461

CPC分类号： H01L21/7813 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/30612 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/7806 ,  H01L2221/6835 ,  H01L2221/68381

摘要： Embodiments of the invention generally relate to epitaxial lift off (ELO) thin films and devices and methods used to form such films and devices. In one embodiment, a method for forming an ELO thin film is provided which includes depositing an epitaxial material over a sacrificial layer on a substrate, adhering a universally shrinkable support handle onto the epitaxial material, wherein the universally shrinkable support handle contains a shrinkable material, and shrinking the support handle to form tension in the support handle and compression in the epitaxial material during a shrinking process. The method further includes removing the sacrificial layer during an etching process, peeling the epitaxial material from the substrate while forming an etch crevice therebetween, and bending the support handle to have substantial curvature.

摘要翻译： 本发明的实施例一般涉及外延剥离（ELO）薄膜，以及用于形成这种膜和装置的装置和方法。 在一个实施例中，提供了一种用于形成ELO薄膜的方法，其包括在衬底上的牺牲层上沉积外延材料，将普遍可收缩的支撑手柄附着在外延材料上，其中普遍可收缩的支撑手柄包含可收缩材料， 并且收缩支撑手柄以在收缩过程中在支撑手柄中形成张力并在外延材料中压缩。 该方法还包括在蚀刻工艺期间去除牺牲层，在衬底之间形成蚀刻缝隙并将支撑柄弯曲成具有实质曲率的同时从衬底剥离外延材料。

公开(公告)号：US20090321881A1

公开(公告)日：2009-12-31

申请号：US12475406

申请日：2009-05-29

申请人： Melissa Archer ,  Harry Atwater ,  Thomas Gmitter ,  Gang He ,  Andreas Hegedus ,  Gregg Higashi ,  Stewart Sonnenfeldt

发明人： Melissa Archer ,  Harry Atwater ,  Thomas Gmitter ,  Gang He ,  Andreas Hegedus ,  Gregg Higashi ,  Stewart Sonnenfeldt

IPC分类号： H01L29/12 ,  H01L21/20

CPC分类号： H01L21/7813 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/30612 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/7806 ,  H01L2221/6835 ,  H01L2221/68381

摘要： Embodiments of the invention generally relate to epitaxial lift off (ELO) thin films and devices and methods used to form such films and devices. In one embodiment, a method for forming an ELO thin film is provided which includes depositing an epitaxial material over a sacrificial layer on a substrate, adhering a flattened, pre-curved support handle onto the epitaxial material, and removing the sacrificial layer during an etching process. The etching process includes bending the pre-curved support handle to have substantial curvature while peeling the epitaxial material from the substrate and forming an etch crevice therebetween. Compression is maintained within the epitaxial material during the etching process. The flattened, pre-curved support handle may be formed by flattening a pre-curved support material.

摘要翻译： 本发明的实施例一般涉及外延剥离（ELO）薄膜，以及用于形成这种膜和装置的装置和方法。 在一个实施例中，提供了一种用于形成ELO薄膜的方法，其包括在衬底上的牺牲层上沉积外延材料，将平坦化的预弯曲支撑手柄粘附到外延材料上，以及在蚀刻期间去除牺牲层 处理。 蚀刻工艺包括弯曲预弯曲的支撑手柄以具有相当大的曲率，同时从衬底剥离外延材料并在其间形成蚀刻缝隙。 在蚀刻过程中压缩保持在外延材料内。 扁平的预弯曲的支撑手柄可以通过使预弯曲的支撑材料变平而形成。

公开(公告)号：US20100001316A1

公开(公告)日：2010-01-07

申请号：US12475418

申请日：2009-05-29

申请人： Thomas Gmitter ,  Gang He ,  Andreas Hegedus

发明人： Thomas Gmitter ,  Gang He ,  Andreas Hegedus

IPC分类号： H01L29/20 ,  H01L21/20

CPC分类号： H01L21/7813 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/30612 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/7806 ,  H01L2221/6835 ,  H01L2221/68381

摘要： Embodiments of the invention generally relate to epitaxial lift off (ELO) thin films and devices and methods used to form such films and devices. In one embodiment, a method for forming a thin film material during an epitaxial lift off process is provided which includes forming an epitaxial material over a sacrificial layer on a substrate, adhering a non-uniform support handle onto the epitaxial material, and removing the sacrificial layer during an etching process. The etching process further includes peeling the epitaxial material from the substrate while forming an etch crevice therebetween and bending the support handle to form compression in the epitaxial material during the etching process. In one example, the non-uniform support handle contains a wax film having a varying thickness.

摘要翻译： 本发明的实施例一般涉及外延剥离（ELO）薄膜，以及用于形成这种膜和装置的装置和方法。 在一个实施例中，提供了在外延剥离工艺期间形成薄膜材料的方法，其包括在衬底上的牺牲层上形成外延材料，将不均匀的支撑手柄附着在外延材料上，以及去除牺牲 在蚀刻过程中。 蚀刻工艺还包括从衬底剥离外延材料，同时在其间形成蚀刻缝隙，并在蚀刻工艺期间弯曲支撑柄以在外延材料中形成压缩。 在一个实例中，不均匀的支撑手柄包含具有变化厚度的蜡膜。

公开(公告)号：US20130098289A1

公开(公告)日：2013-04-25

申请号：US13444645

申请日：2012-04-11

申请人： Gang He ,  Gregg Higashi ,  Khurshed Sorabji ,  Roger Hamamjy ,  Andreas Hegedus ,  Melissa Archer ,  Harry Atwater ,  Stewart Sonnenfeldt

发明人： Gang He ,  Gregg Higashi ,  Khurshed Sorabji ,  Roger Hamamjy ,  Andreas Hegedus ,  Melissa Archer ,  Harry Atwater ,  Stewart Sonnenfeldt

IPC分类号： C30B25/12 ,  C30B25/10 ,  C30B25/18 ,  C30B25/14 ,  C30B25/08 ,  C30B25/02

CPC分类号： C30B25/08 ,  B65G2207/06 ,  C23C16/45519 ,  C23C16/4583 ,  C23C16/54 ,  C30B25/025 ,  C30B25/10 ,  C30B25/12 ,  C30B25/14 ,  C30B25/18 ,  C30B29/40 ,  C30B29/42 ,  H01L21/67109 ,  H01L21/67784

摘要： Embodiments of the invention generally relate to a chemical vapor deposition system and related method of use. In one embodiment, the system includes a reactor lid assembly having a body, a track assembly having a body and a guide path located along the body, and a heating assembly operable to heat the substrate as the substrate moves along the guide path. The body of the lid assembly and the body of the track assembly are coupled together to form a gap that is configured to receive a substrate. In another embodiment, a method of forming layers on a substrate using the chemical vapor deposition system includes introducing the substrate into a guide path, depositing a first layer on the substrate and depositing a second layer on the substrate, while the substrate moves along the guide path; and preventing mixing of gases between the first deposition step and the second deposition step.