摘要:
A printing unit, which is a part of a multi-color printing press, has a plurality of double printing units which are arranged vertically one above the other and consist of two printing groups forming a double print position. The printing group cylinders are mounted together in a central stand section. Inking units, which are associated with the printing groups, are mounted in outer stand sections. A distance between adjacent ones of these stand sections is adjustable. Printing and transfer cylinders of each printing group are coupled by a toothed gear wheel connection and are driven in pairs by a separate drive motor. The toothed gear wheels of all of the printing group cylinders are arranged in a common lubricant chamber which is formed by the central stand section and a cover. The inking systems have at least one separate drive motor, which is independent of the printing group cylinders.
摘要:
An apparatus and method of operation for a high power broad band elongated thin beam laser annealing light source, which may comprise a gas discharge seed laser oscillator having a resonance cavity, providing a seed laser output pulse; a gas discharge amplifier laser amplifying the seed laser output pulse to provide an amplified seed laser pulse output; a divergence correcting multi-optical element optical assembly intermediate the seed laser and the amplifier laser. The divergence correcting optical assembly may adjust the size and/or shape of the seed laser output pulse within a discharge region of the amplifier laser in order to adjust an output parameter of the amplified seed laser pulse output. The divergence correcting optical assembly may comprise a telescope with an adjustable focus. The adjustable telescope may comprise an active feedback-controlled actuator based upon a sensed parameter of the amplified seed laser output from the amplifier laser.
摘要:
A transistor and method of fabrication thereof includes a screening layer formed at least in part in the semiconductor substrate beneath a channel layer and a gate stack, the gate stack including spacer structures on either side of the gate stack. The transistor includes a shallow lightly doped drain region in the channel layer and a deeply lightly doped drain region at the depth relative to the bottom of the screening layer for reducing junction leakage current. A compensation layer may also be included to prevent loss of back gate control.
摘要:
Methods, systems, and apparatus, including computer program products, for implementing a software architecture design for a software application implementing manual invoicing. The application is structured as multiple process components interacting with each other through service interfaces, and multiple service operations, each being implemented for a respective process component. The process components include a Customer Invoice Processing process component, a Due Item Processing process component, a Payment Processing process component, an Accounting process component, a Project Processing process component, and a Balance of Foreign Payment Management process component.
摘要:
Methods, systems, and apparatus, including computer program products, for implementing a software architecture design for a software application implementing sell from stock software useful to process quotations, capture orders, process delivery and invoice. The application is structured as multiple process components interacting with each other through service interfaces, and multiple service operations, each being implemented for a respective process component. The process components include an Accounting process component; a Financial Accounting Master Data Management process component; an Outbound Delivery Processing process component; a Site Logistics Processing process component; an Inventory Processing process component; a Customer Requirement Processing process component; a Supply and Demand Matching process component; a Logistics Execution Control process component; a Due Item Processing process component; a Balance of Foreign Payment Management process component; a Payment Processing process component; a Customer Invoice Processing process component; a Customer Quote Processing process component; and a Sales Order Processing process component.
摘要:
A cash management system includes a cash location business object, an owner business object associated with the cash location business object, and a provider business object associated with the cash location business object. The cash location business object further includes a plurality of attributes including a type of cash.
摘要:
A semiconductor device having high tensile stress. The semiconductor device comprises a substrate having a source region and a drain region. Each of the source region and the drain region includes a plurality of separated source sections and drain sections, respectively. A shallow trench isolation (STI) region is formed between two separated source sections of the source region and between two separated drain sections of the drain region. A gate stack is formed on the substrate. A tensile inducing layer is formed over the substrate. The tensile inducing layer covers the STI regions, the source region, the drain region, and the gate stack. The tensile inducing layer is an insulation capable of causing tensile stress in the substrate.
摘要:
An embodiment of the invention reduces the external resistance of a transistor by utilizing a silicon germanium alloy for the source and drain regions and a nickel silicon germanium self-aligned silicide (i.e., salicide) layer to form the contact surface of the source and drain regions. The interface of the silicon germanium and the nickel silicon germanium silicide has a lower specific contact resistivity based on a decreased metal-semiconductor work function between the silicon germanium and the silicide and the increased carrier mobility in silicon germanium versus silicon. The silicon germanium may be doped to further tune its electrical properties. A reduction of the external resistance of a transistor equates to increased transistor performance both in switching speed and power consumption.
摘要:
A semiconductor device having high tensile stress. The semiconductor device comprises a substrate having a source region and a drain region. Each of the source region and the drain region includes a plurality of separated source sections and drain sections, respectively. A shallow trench isolation (STI) region is formed between two separated source sections of the source region and between two separated drain sections of the drain region. A gate stack is formed on the substrate. A tensile inducing layer is formed over the substrate. The tensile inducing layer covers the STI regions, the source region, the drain region, and the gate stack. The tensile inducing layer is an insulation capable of causing tensile stress in the substrate.
摘要:
An embodiment of the invention reduces the external resistance of a transistor by utilizing a silicon germanium alloy for the source and drain regions and a nickel silicon germanium self-aligned silicide (i.e., salicide) layer to form the contact surface of the source and drain regions. The interface of the silicon germanium and the nickel silicon germanium silicide has a lower specific contact resistivity based on a decreased metal-semiconductor work function between the silicon germanium and the silicide and the increased carrier mobility in silicon germanium versus silicon. The silicon germanium may be doped to further tune its electrical properties. A reduction of the external resistance of a transistor equates to increased transistor performance both in switching speed and power consumption.