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    CVD diamond by alternating chemical reactions
    5.
    发明授权
    CVD diamond by alternating chemical reactions 失效
    CVD金刚石交替进行化学反应

    公开(公告)号：US5302231A

    公开(公告)日：1994-04-12

    申请号：US956817

    申请日：1992-10-05

    申请人： Harold P. Bovenkerk ,  Thomas R. Anthony ,  James F. Fleischer ,  William F. Banholzer

    发明人： Harold P. Bovenkerk ,  Thomas R. Anthony ,  James F. Fleischer ,  William F. Banholzer

    IPC分类号： C23C16/26 ,  C23C16/27 ,  C30B25/02 ,  C30B29/04 ,  C30B25/00

    CPC分类号： C23C16/27 ,  C23C16/277 ,  C30B25/02 ,  C30B29/04

    摘要： The present invention relates to a method for growing diamond on a diamond substrate by chemical vapor deposition. The inventive method comprises alternatingly contacting at elevated temperature said diamond substrate with a gas having the formula C.sub.n X.sub.m and then with a gas having the formula C.sub.l Z.sub.p. X and Z each form single bonds with carbon. X and Z also are reactable to form ZX or a derivative thereof. The Z--X bond is stronger than the C--X bond and also is stronger than the C--Z bond. In the formulas, n, m, l, and p are integers. If C.sub.n X.sub.m and C.sub.l Z.sub.p do not react in the gas phase, then a gas mixture of them can be used to grow diamond instead of the alternating exposure of one and then the other.

    摘要翻译： 本发明涉及通过化学气相沉积在金刚石基底上生长金刚石的方法。 本发明的方法包括在升高的温度下将所述金刚石基底与具有式C n X m的气体交替接触，然后与具有式ClZp的气体交替接触。 X和Z各自与碳形成单键。 X和Z也可以反应形成ZX或其衍生物。 Z-X键比C-X键强，也比C-Z键强。 在公式中，n，m，l和p是整数。 如果CnXm和ClZp在气相中没有反应，则可以使用它们的气体混合物来生长金刚石，而不是交替暴露于另一种。

    Isotopically-pure carbon-12 or carbon-13 polycrystalline diamond possessing enhanced thermal conductivity
    6.
    发明授权
    Isotopically-pure carbon-12 or carbon-13 polycrystalline diamond possessing enhanced thermal conductivity 失效
    具有增强的导热性的同位素纯碳12或碳-13多晶金刚石

    公开(公告)号：US5540904A

    公开(公告)日：1996-07-30

    申请号：US368732

    申请日：1995-01-04

    申请人： Harold P. Bovenkerk ,  Thomas R. Anthony ,  James F. Fleischer ,  William F. Banholzer

    发明人： Harold P. Bovenkerk ,  Thomas R. Anthony ,  James F. Fleischer ,  William F. Banholzer

    IPC分类号： B01J3/06 ,  C01B31/06 ,  C23C16/27 ,  C30B25/02

    CPC分类号： C23C16/27 ,  B01J3/062 ,  C01B31/06 ,  C30B25/02 ,  C30B29/04 ,  B01J2203/061 ,  B01J2203/062 ,  B01J2203/0625 ,  B01J2203/0645 ,  B01J2203/0655 ,  B01J2203/066 ,  B01J2203/068 ,  B01J2203/0685

    摘要： Broadly, the present invention is directed to polycrystalline diamond of improved thermal conductivity. The novel polycrystalline diamond consists essentially of at least 99.5 wt-% isotopically-pure carbon-12 or carbon-13. The inventive polycrystalline diamond is formed from at least 99.5 wt-% isotopically-pure carbon-12 or carbon-13. Single-crystal isotopically-pure carbon-12 and carbon-13 diamond are known to possess improved thermal conductivity. Polycrystalline diamond, however, possesses lower thermal conductivity patterns deleteriously impacted by, for example, impurities, isotopic effects, and grain boundary scattering. In fact, grain boundary scattering would lead the skilled artisan to believe that the thermal conductivity of polycrystalline diamond would be substantially unaffected by the isotopic nature of the diamond itself. Unexpectedly, however, isotopic effects were discovered to predominate in impacting the thermal conductivity of polycrystalline diamond consisting essentially of isotopically-pure carbon-12 or carbon-13. This is true whether the isotopically-pure polycrystalline diamond is grown directly or whether individual isotopically-pure carbon-12 or carbon 13 diamond crystals are subjected to sintering for forming a polycrystalline structure, e.g. layer or compact, thereof.

    摘要翻译： 概括地说，本发明涉及具有改善导热性的多晶金刚石。 新型多晶金刚石基本上由至少99.5重量％的同位素纯碳-12或碳-13组成。 本发明的多晶金刚石由至少99.5重量％的同位素纯碳-12或碳-13形成。 已知单晶同位素纯碳-12和碳-13金刚石具有改善的导热性。 然而，多晶金刚石具有由例如杂质，同位素效应和晶界散射有害影响的较低热导率图案。 事实上，晶粒边界散射将导致技术人员相信，多晶金刚石的导热性将基本上不受金刚石本身的同位素性质的影响。 然而，意外的是，发现同位素效应在影响基本上由同位素纯碳-12或碳-13组成的多晶金刚石的热导率方面占优势。 无论同位素纯多晶金刚石是直接生长还是单独同位素纯碳12或碳13金刚石晶体进行烧结以形成多晶结构，例如， 层或紧凑。

    CVD diamond for coating twist drills
    7.
    发明授权
    CVD diamond for coating twist drills 失效
    CVD金刚石涂层烫伤

    公开(公告)号：US5096736A

    公开(公告)日：1992-03-17

    申请号：US563367

    申请日：1990-08-07

    申请人： Thomas R. Anthony ,  William F. Banholzer ,  Robert H. Ettinger ,  James F. Fleischer

    发明人： Thomas R. Anthony ,  William F. Banholzer ,  Robert H. Ettinger ,  James F. Fleischer

    IPC分类号： B23P15/28 ,  C23C16/26 ,  C23C16/27 ,  C23C16/44 ,  C23C16/458 ,  C30B29/04

    CPC分类号： C23C16/458 ,  C23C16/271

    摘要： The present invention enables the diamond coating of stationary elongate objects, such as twist drills, with a continuous uniform film without any motion of the twist drill due to the unexpected superb "throwing power" of a reactor disclosed herein. The CVD diamond reactor includes a vacuum chamber, inlet for feed hydrogen/hydrocarbon mixtures, and an outlet, in conventional fashion. The improvement for coating with CVD diamond the entire outer surface of at least a portion of a plurality of stationary elongate objects comprises disposed within said reactor, an elongate metal tube having a plurality of apertures for holding elongate objects disposed radially inwardly and having a cooling pipe in thermal contact with and disposed about the outside of said metal tube; and a filament running within said tube along its lengthwise extent and being in electrical connection with the source of voltage for heating said filament to a temperature adequate to initiate hydrocarbon disassociation, the portions of said elongate object within said tube surrounding said filament being heated thereby.

    Isotopically pure single crystal epitaxial diamond films and their preparation
    8.
    发明授权
    Isotopically pure single crystal epitaxial diamond films and their preparation 失效
    同位素纯单晶外延金刚石薄膜及其制备方法

    公开(公告)号：US5360479A

    公开(公告)日：1994-11-01

    申请号：US547651

    申请日：1990-07-02

    申请人： William F. Banholzer ,  Thomas R. Anthony ,  Dennis M. Williams

    发明人： William F. Banholzer ,  Thomas R. Anthony ,  Dennis M. Williams

    IPC分类号： B01J3/06 ,  C23C16/27 ,  C30B25/02 ,  C30B25/10 ,  C30B29/04

    CPC分类号： C30B25/02 ,  B01J3/06 ,  C23C16/27 ,  C30B25/105 ,  C30B29/04 ,  B01J2203/0655

    摘要： The present invention is directed to the production of single-crystal diamond consisting of isotopically pure carbon-12 or carbon-13. The product is believed to be like that diamond product in application Ser. No. 448,469, but is made by a different method. In the present invention, isotopically pure single-crystal diamond is grown on a single crystal substrate directly from isotopically pure carbon-12 or carbon-13. One method for forming isotopically pure single-crystal diamond comprises the steps of placing in a reaction chamber a single crystal substrate heated to an elevated CVD diamond-forming temperature. A gaseous mixture of hydrogen and a hydrocarbon of isotopically pure carbon-12 or carbon-13 is provided in the chamber. The gaseous mixture then is at least partially decomposed in the chamber to form an isotopically-pure single crystal diamond layer on the single crystal substrate disposed therein. The thus-formed isotopically-pure single crystal diamond layer optionally may be removed from the single crystal substrate. Another method for forming isotopically-pure single-crystal diamond comprises diffusing isotopically-pure carbon-12 or carbon-13 through a metallic catalyst/solvent under high pressure to a region containing a single crystal substrate to form an isotopically-pure single-crystal diamond layer on said single crystal substrate. The single crystal substrate is stable under the high pressure and elevated temperatures used during the diffusion process. The single crystal substrates optionally may be diamond, including the isotopically-pure single-crystal diamond films formed by the inventive method disclosed herein, thus forming multi-layered diamond structures.

    摘要翻译： 本发明涉及由同位素纯碳-12或碳-13组成的单晶金刚石的制备。 该产品被认为是应用Ser中的那种钻石产品。 No. 448,469，但是由不同的方法制成。 在本发明中，同位素纯的单晶金刚石直接从同位素纯碳-12或碳-13生长在单晶基底上。 用于形成同位素纯的单晶金刚石的一种方法包括以下步骤：将加热到升高的CVD金刚石形成温度的单晶衬底置于反应室中。 在室中提供氢气和同位素纯碳-12或碳-13烃的气体混合物。 气体混合物然后在腔室中至少部分分解，以在设置在其中的单晶衬底上形成同位素纯的单晶金刚石层。 如此形成的同位素纯的单晶金刚石层任选地可以从单晶衬底去除。 用于形成同位素纯的单晶金刚石的另一种方法包括将同位素纯的碳-12或碳-13通过金属催化剂/溶剂在高压下扩散到含有单晶底物的区域，以形成同位素纯的单晶金刚石 在所述单晶衬底上。 单晶基板在扩散过程中使用的高压和高温下是稳定的。 单晶衬底任选地可以是金刚石，包括通过本文公开的本发明方法形成的同位素纯的单晶金刚石膜，从而形成多层金刚石结构。

    CVD diamond for coating twist drills
    10.
    发明授权
    CVD diamond for coating twist drills 失效
    CVD金刚石涂层麻花钻

    公开(公告)号：US5256206A

    公开(公告)日：1993-10-26

    申请号：US929239

    申请日：1992-08-14

    申请人： Thomas R. Anthony ,  William F. Banholzer ,  Robert H. Ettinger ,  James F. Fleischer

    发明人： Thomas R. Anthony ,  William F. Banholzer ,  Robert H. Ettinger ,  James F. Fleischer

    IPC分类号： C23C16/27 ,  C23C16/458 ,  C23C16/00

    CPC分类号： C23C16/458 ,  C23C16/271

    摘要： The present invention enables the diamond coating of stationary elongate objects, such as twist drills, with a continuous uniform film without any motion of the twist drill due to the unexpected superb "throwing power" of a reactor disclosed herein. The CVD diamond reactor includes a vacuum chamber, inlet for feed hydrogen/hydrocarbon mixtures, and an outlet, in conventional fashion. The improvement for coating with CVD diamond the entire outer surface of at least a portion of a plurality of stationary elongate objects comprises disposed within said reactor, an elongate metal tube having a plurality of apertures for holding elongate objects disposed radially inwardly and having a cooling pipe in thermal contact with and disposed about the outside of said metal tube; and a filament running within said tube along its lengthwise extent and being in electrical connection with the source of voltage for heating said filament to a temperature adequate to initiate hydrocarbon disassociation, the portions of said elongate object within said tube surrounding said filament being heated thereby.

    摘要翻译： 本发明使得由于本文公开的反应堆的意想不到的极好的“投掷力”，可以使具有连续均匀膜的固定细长物体（例如麻花钻）的金刚石涂层，而不需要麻花钻的任何运动。 CVD金刚石反应器以常规方式包括真空室，进料氢/烃混合物的入口和出口。 用CVD金刚石涂层的改进使得多个静止细长物体的至少一部分的整个外表面包括设置在所述反应器内的细长金属管，其具有多个孔，用于保持径向向内设置的细长物体并具有冷却管 与所述金属管的外部热接触并设置在所述金属管的外部; 以及沿着其长度方向在所述管内延伸的细丝，并且与用于将所述细丝加热到足以引发碳氢化合物分解的温度的电压源电连接，所述细长物体在围绕所述细丝的管内的部分被加热。