公开(公告)号：US10309005B2

公开(公告)日：2019-06-04

申请号：US15032688

申请日：2014-08-28

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yasuhiko Kojima ,  Hiroshi Sone ,  Atsushi Gomi ,  Kanto Nakamura ,  Toru Kitada ,  Yasunobu Suzuki ,  Yusuke Suzuki ,  Koichi Takatsuki ,  Tatsuo Hirasawa ,  Keisuke Sato ,  Chiaki Yasumuro ,  Atsushi Shimada

IPC: H01J37/34 ,  H01J37/32 ,  C23C14/35 ,  C23C14/16 ,  C23C14/08 ,  C23C14/00 ,  H01L43/12 ,  H01L43/10 ,  H01L43/08

Abstract: A deposition device according to one embodiment includes a processing container. A mounting table is installed inside the processing container, and a metal target is installed above the mounting table. Further, a head is configured to inject an oxidizing gas toward the mounting table. This head is configured to move between a first region that is defined between the metal target and a mounting region where a target object is mounted on the mounting table and a second region spaced apart from a space defined between the metal target and the mounting region.

公开(公告)号：US20220403503A1

公开(公告)日：2022-12-22

申请号：US17840055

申请日：2022-06-14

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hiroyuki Iwashita ,  Toru Kitada ,  Atsushi Shimada

IPC: C23C14/34 ,  C23C14/00 ,  C23C14/10 ,  C23C14/54

Abstract: A film forming apparatus for forming a metal oxide film on a substrate, includes: a substrate support part configured to support the substrate; a heating mechanism configured to heat the substrate supported by the substrate support part; a processing container in which the substrate support part is provided; a holder configured to hold a metal material target inside the processing container and connected to a power source; a gas supply part configured to supply an oxygen gas into the processing container; and a controller, wherein the controller is configured to control the heating mechanism, the power source, and the gas supply part so as to execute alternately and repeatedly: forming a predetermined film on the substrate inside the processing container by reactive sputtering in a metal mode; and forming a target metal oxide film by causing the predetermined film to react with an oxygen gas inside the processing container.

公开(公告)号：US12163215B2

公开(公告)日：2024-12-10

申请号：US17631188

申请日：2020-07-02

Applicant: TOKYO ELECTRON LIMITED

Inventor： Koji Maeda ,  Atsushi Shimada ,  Katsushi Oikawa ,  Tetsuya Miyashita

IPC: C23C14/34 ,  C23C14/35 ,  C23C14/52 ,  C23C14/54 ,  H01J37/34

Abstract: A film forming apparatus includes a processing container, a substrate holder configured to hold a substrate inside the processing container, a cathode unit disposed above the substrate holder, and a gas introducing mechanism configured to introduce a plasma generating gas into the processing container. The cathode unit includes a target, a power supply configured to supply electric power to the target, a magnet provided on a rear side of the target, and a magnet driving part configured to drive the magnet. The magnet driving part includes an oscillation driver configured to oscillate the magnet along the target, and a perpendicular driver configured to drive the magnet in a direction perpendicular to a main surface of the target independently of driving performed by the oscillation driver. Sputtered particles are deposited on the substrate by magnetron sputtering.

公开(公告)号：US10189230B2

公开(公告)日：2019-01-29

申请号：US15638099

申请日：2017-06-29

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hiroyuki Toshima ,  Atsushi Shimada ,  Tatsuo Hirasawa ,  Tatsuo Hatano ,  Shinji Furukawa

IPC: B32B15/20 ,  H01L23/532 ,  C01G23/00 ,  C01G41/00 ,  H01L21/768

Abstract: A method for forming a copper film is provided. In the method, a base film that is a titanium nitride film, a tungsten film or a tungsten nitride film is formed along a surface of an insulating film of an object. A copper film is formed on the base film of the object cooled to a temperature of 209 K or less.

公开(公告)号：US09362167B2

公开(公告)日：2016-06-07

申请号：US14620886

申请日：2015-02-12

Applicant: TOKYO ELECTRON LIMITED

Inventor： Atsushi Shimada ,  Shinji Furukawa ,  Tatsuo Hatano

IPC: H01L21/20 ,  H01L21/768 ,  H01L21/285

CPC classification number: H01L21/76882 ,  C23C14/024 ,  C23C14/046 ,  C23C14/0641 ,  C23C14/14 ,  C23C14/3464 ,  C23C14/5806 ,  H01L21/2855 ,  H01L21/76843 ,  H01L21/76876

Abstract: A method of supplying cobalt to a recess formed in an insulation film of an object to be processed is disclosed. In one embodiment, the method includes forming a cobalt nitride film on a surface of the insulation film comprising a surface defining the recess, forming a cobalt film on the cobalt nitride film, and heating the cobalt film.

Abstract translation: 公开了一种向被处理物的绝缘膜形成的凹部供给钴的方法。 在一个实施例中，该方法包括在绝缘膜的表面上形成氮化钴膜，该表面包括限定凹部的表面，在氮化钴膜上形成钴膜，并加热钴膜。

公开(公告)号：US09313895B2

公开(公告)日：2016-04-12

申请号：US14098465

申请日：2013-12-05

Applicant: Tokyo Electron Limited

Inventor： Tadahiro Ishizaka ,  Kenji Suzuki ,  Atsushi Shimada

IPC: H05K3/10 ,  H01L23/532 ,  H01L21/285 ,  H01L21/768 ,  H01L21/02 ,  H01L21/3105 ,  C23C14/35 ,  H05K1/03

CPC classification number: H05K3/107 ,  C23C14/358 ,  H01L21/02063 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/3105 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76846 ,  H01L21/76855 ,  H01L23/53238 ,  H01L23/5329 ,  H01L2924/0002 ,  H05K1/0306 ,  H05K2201/0338 ,  H01L2924/00

Abstract: There is provided a Cu wiring forming method for forming a Cu wiring by filling Cu in a recess, which is formed in a predetermined pattern in a Si-containing film of a substrate. The Cu wiring forming method includes forming a Mn film, which becomes a self-aligned barrier film by reaction with an underlying base, at least on a surface of the recess by chemical vapor deposition, forming a Cu film by a physical vapor deposition to fill the recess with the Cu film, and forming a Cu wiring in the recess by polishing the entire surface of the substrate by a chemical mechanical polishing.

Abstract translation: 提供了一种用于通过在基板的含Si膜中以预定图案形成的凹部中填充Cu来形成Cu布线的Cu布线形成方法。 Cu布线形成方法包括通过化学气相沉积在至少在凹部的表面上形成通过与下面的基底反应而成为自对准阻挡膜的Mn膜，通过物理气相沉积形成Cu膜以填充 具有Cu膜的凹部，并且通过化学机械抛光对基板的整个表面进行抛光来在凹部中形成Cu布线。