公开(公告)号：US20220098717A1

公开(公告)日：2022-03-31

申请号：US17428597

申请日：2019-09-20

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kenichi IMAKITA ,  Kazunaga ONO ,  Toru KITADA ,  Keisuke SATO ,  Atsushi GOMI ,  Hiroyuki YOKOHARA ,  Hiroshi SONE

IPC: C23C14/00 ,  C23C14/50 ,  C23C14/08 ,  C23C14/56 ,  C23C14/34

Abstract: A film forming apparatus according to the present invention comprises: a processing chamber; a substrate holder for holding a substrate within the processing chamber; a target electrode, disposed above the substrate holder, for holding a metal target and supplying electrical power from a power source to the target; an oxidizing gas introduction mechanism for supplying an oxidizing gas to the substrate; and a gas supply unit for supplying an inert gas to the space where the target is disposed. Constituent metal is discharged from the target in the form of sputter particles, whereby a metal film is deposited on the substrate, and the metal film is oxidized by the oxidizing gas introduced by the oxidizing gas introduction mechanism, thereby forming a metal oxide film. When the oxidizing gas is introduced, the gas supply unit supplies the inert gas to the space where the target is disposed so that the pressure therein is positive with respect to the pressure in a processing space.

公开(公告)号：US20230005989A1

公开(公告)日：2023-01-05

申请号：US17854944

申请日：2022-06-30

Applicant: Tokyo Electron Limited

Inventor： Keisuke SATO ,  Toru KITADA ,  Atsushi GOMI ,  Kanto NAKAMURA

IPC: H01L27/22 ,  H01L43/02 ,  H01L21/67

Abstract: A film forming apparatus for forming a laminated structure on a substrate to form a magnetic tunnel junction element is disclosed. The film forming apparatus comprises: a plurality of processing chambers where a magnetic layer and an insulating layer are formed on the substrate; a heat treatment chamber where a magnetic field is applied to the substrate to perform heat treatment; a vacuum transfer chamber that connects the processing chambers and the heat treatment chamber; and a controller.

公开(公告)号：US20160251746A1

公开(公告)日：2016-09-01

申请号：US15032688

申请日：2014-08-28

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yasuhiko KOJIMA ,  Hiroshi SONE ,  Atsushi GOMI ,  Kanto NAKAMURA ,  Toru KITADA ,  Yasunobu SUZUKI ,  Yusuke SUZUKI ,  Koichi TAKATSUKI ,  Tatsuo HIRASAWA ,  Keisuke SATO ,  Chiaki YASUMURO ,  Atsushi SHIMADA

IPC: C23C14/00 ,  H01L43/08 ,  H01J37/32 ,  C23C14/16 ,  H01J37/34 ,  H01L43/12 ,  H01L43/10

CPC classification number: C23C14/0036 ,  C23C14/0063 ,  C23C14/081 ,  C23C14/165 ,  C23C14/352 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/3405 ,  H01J37/3426 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: A deposition device according to one embodiment includes a processing container. A mounting table is installed inside the processing container, and a metal target is installed above the mounting table. Further, a head is configured to inject an oxidizing gas toward the mounting table. This head is configured to move between a first region that is defined between the metal target and a mounting region where a target object is mounted on the mounting table and a second region spaced apart from a space defined between the metal target and the mounting region.

Abstract translation: 根据一个实施例的沉积装置包括处理容器。 安装台安装在加工容器的内部，金属靶被安装在安装台的上方。 此外，头部构造成朝向安装台注入氧化气体。 该头部构造成在限定在金属靶和安装在安装台上的目标物体的安装区域之间的第一区域和与限定在金属靶和安装区域之间的空间间隔开的第二区域之间移动。