公开(公告)号：US20230305389A1

公开(公告)日：2023-09-28

申请号：US18184141

申请日：2023-03-15

Applicant: Tokyo Electron Limited

Inventor： Takashi YAMAUCHI

IPC: G03F7/00 ,  G03F7/20 ,  G03F7/16 ,  H01L21/677

CPC classification number: G03F7/0035 ,  G03F7/2041 ,  G03F7/168 ,  H01L21/67745

Abstract: An aspect of this disclosure is a substrate treatment method of performing a treatment for forming a pattern of a metal-containing resist on a substrate includes changing an acid concentration in a substrate existence space where the substrate exists in a substrate treatment apparatus before a developing treatment of a film of the metal-containing resist.

公开(公告)号：US20230152703A1

公开(公告)日：2023-05-18

申请号：US18098572

申请日：2023-01-18

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takashi YAMAUCHI ,  Daiki SHIBATA ,  Kohei KAWAKAMI

IPC: G03F7/16 ,  B05B9/00 ,  H01L21/67 ,  B05C11/10 ,  H01L21/687

CPC classification number: G03F7/162 ,  B05B9/002 ,  B05C11/1042 ,  H01L21/6715 ,  H01L21/67017 ,  H01L21/67248 ,  H01L21/68764 ,  H01L21/0273

Abstract: A liquid treatment apparatus includes: a substrate holder for holding a substrate; a discharge nozzle for discharging a treatment liquid onto the substrate; a liquid supply pipe for supplying the treatment liquid from a treatment liquid storage source to the discharge nozzle; a gas pipe that encompasses the liquid supply pipe and through which an inert gas for adjusting the temperature of the treatment liquid flows in a space between the gas pipe and the liquid supply pipe; a processing container in which the substrate holder, the discharge nozzle, the liquid supply pipe, and the gas pipe are provided; and an atmosphere gas supply part for supplying an atmosphere gas into the processing container. The gas pipe is provided so that an extension portion between an upstream end inside the processing container and an encompassing portion is folded back inside the processing container in a plan view.

公开(公告)号：US20200279736A1

公开(公告)日：2020-09-03

申请号：US16759532

申请日：2018-10-22

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takashi YAMAUCHI ,  Shinichiro KAWAKAMI ,  Masashi ENOMOTO

IPC: H01L21/033 ,  H01L21/027 ,  H01L21/311 ,  H01L21/67

Abstract: A technique for suppressing a metal component from remaining at a bottom of a mask pattern when the mask pattern is formed using a metal-containing resist film. A developable anti reflection film 103 is previously formed below a resist film 104. Further, after exposing and developing the wafer W, TMAH is supplied to the wafer W to remove a surface of the anti-reflection film 103 facing a bottom of the recess pattern 110 of the resist film 104. Therefore, the metal component 105 can be suppressed from remaining at the bottom of the recess pattern 110. Therefore, when the SiO2 film 102 is subsequently etched using the pattern of the resist film 104, the etching is not hindered, so that defects such as bridges can be suppressed.

公开(公告)号：US20160124307A1

公开(公告)日：2016-05-05

申请号：US14896415

申请日：2014-06-06

Applicant: Tokyo Electron Limited

Inventor： Makoto MURAMATSU ,  Takahiro KITANO ,  Tadatoshi TOMITA ,  Takanori NISHI ,  Shinichiro KAWAKAMI ,  Takashi YAMAUCHI

IPC: G03F7/20 ,  G03F7/16

CPC classification number: G03F7/20 ,  B81C2201/0149 ,  C08L53/00 ,  C09D153/00 ,  G03F7/0002 ,  G03F7/16 ,  G03F7/32 ,  G03F7/40 ,  H01L21/02282 ,  H01L21/0274 ,  H01L21/3086 ,  H01L21/31133 ,  H01L21/67028 ,  H01L21/67051 ,  H01L21/6708

Abstract: A substrate treatment method includes: a polymer separation step of phase-separating a block copolymer into a hydrophilic polymer and a hydrophobic polymer; and a polymer removal step of selectively removing the hydrophilic polymer from the phase-separated block copolymer, wherein in the polymer removal step, the hydrophilic polymer is removed by: irradiating the phase-separated block copolymer with an energy ray; then supplying a first polar organic solvent having a first degree of dissolving the hydrophilic polymer, being lower in boiling point than water and capable of dissolving water, and not dissolving the hydrophobic polymer, to the block copolymer; and then supplying a second polar organic solvent having a second dissolving degree lower than the first dissolving degree, being higher in boiling point than water, and not dissolving the hydrophobic polymer, to the block copolymer.

Abstract translation: 基板处理方法包括：将嵌段共聚物相分离成亲水性聚合物和疏水性聚合物的聚合物分离工序; 以及从相分离的嵌段共聚物中选择性除去亲水性聚合物的聚合物去除步骤，其中在聚合物去除步骤中，通过以下方式除去亲水性聚合物：用能量射线照射相分离的嵌段共聚物; 然后提供具有第一溶解亲水性聚合物的第一极性有机溶剂，其沸点低于水，并且能够将水溶解并且不将疏水性聚合物溶解到嵌段共聚物中; 然后提供第二溶解度低于第一溶解度的第二极性有机溶剂，其沸点高于水，并且不将疏水性聚合物溶解在嵌段共聚物中。

公开(公告)号：US20210208504A1

公开(公告)日：2021-07-08

申请号：US17056096

申请日：2019-05-17

Applicant: Tokyo Electron Limited

Inventor： Takashi YAMAUCHI ,  Shinichiro KAWAKAMI ,  Masashi ENOMOTO

IPC: G03F7/16 ,  G03F7/20

Abstract: A substrate processing method includes: forming a coating film on a substrate by supplying a resist liquid which is photosensitive to extreme ultraviolet (EUV) light to a surface of the substrate; forming a semi-solidified film by volatilizing a solvent contained in the coating film without heating the solvent; irradiating the semi-solidified film with EUV light thereby exposing the semi-solidified film with EUV light; and supplying a developer to the substrate after the exposure of the semi-solidified film.

公开(公告)号：US20240274438A1

公开(公告)日：2024-08-15

申请号：US18644661

申请日：2024-04-24

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takashi YAMAUCHI ,  Shinichiro KAWAKAMI ,  Masashi ENOMOTO

IPC: H01L21/033 ,  H01L21/027 ,  H01L21/311 ,  H01L21/67

CPC classification number: H01L21/0337 ,  H01L21/0276 ,  H01L21/0332 ,  H01L21/0335 ,  H01L21/31144 ,  H01L21/6715

Abstract: A technique for suppressing a metal component from remaining at a bottom of a mask pattern when the mask pattern is formed using a metal-containing resist film. A developable anti reflection film 103 is previously formed below a resist film 104. Further, after exposing and developing the wafer W, TMAH is supplied to the wafer W to remove a surface of the anti-reflection film 103 facing a bottom of the recess pattern 110 of the resist film 104. Therefore, the metal component 105 can be suppressed from remaining at the bottom of the recess pattern 110. Therefore, when the SiO2 film 102 is subsequently etched using the pattern of the resist film 104, the etching is not hindered, so that defects such as bridges can be suppressed.

公开(公告)号：US20210181638A1

公开(公告)日：2021-06-17

申请号：US17113591

申请日：2020-12-07

Applicant: Tokyo Electron Limited

Inventor： Takashi YAMAUCHI ,  Daiki SHIBATA ,  Kohei KAWAKAMI

IPC: G03F7/16 ,  B05B9/00

Abstract: A liquid treatment apparatus includes: a substrate holder for holding a substrate; a discharge nozzle for discharging a treatment liquid onto the substrate; a liquid supply pipe for supplying the treatment liquid from a treatment liquid storage source to the discharge nozzle; a gas pipe that encompasses the liquid supply pipe and through which an inert gas for adjusting the temperature of the treatment liquid flows in a space between the gas pipe and the liquid supply pipe; a processing container in which the substrate holder, the discharge nozzle, the liquid supply pipe, and the gas pipe are provided; and an atmosphere gas supply part for supplying an atmosphere gas into the processing container. The gas pipe is provided so that an extension portion between an upstream end inside the processing container and an encompassing portion is folded back inside the processing container in a plan view.

公开(公告)号：US20230042982A1

公开(公告)日：2023-02-09

申请号：US17969878

申请日：2022-10-20

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takashi YAMAUCHI ,  Shinichiro KAWAKAMI ,  Masashi ENOMOTO

IPC: H01L21/033 ,  H01L21/027 ,  H01L21/311 ,  H01L21/67

Abstract: A technique for suppressing a metal component from remaining at a bottom of a mask pattern when the mask pattern is formed using a metal-containing resist film. A developable anti reflection film 103 is previously formed below a resist film 104. Further, after exposing and developing the wafer W, TMAH is supplied to the wafer W to remove a surface of the antireflection film 103 facing a bottom of the recess pattern 110 of the resist film 104. Therefore, the metal component 105 can be suppressed from remaining at the bottom of the recess pattern 110. Therefore, when the SiO2 film 102 is subsequently etched using the pattern of the resist film 104, the etching is not hindered, so that defects such as bridges can be suppressed.

公开(公告)号：US20160163560A1

公开(公告)日：2016-06-09

申请号：US14957164

申请日：2015-12-02

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tomonori ESAKI ,  Shinichiro KAWAKAMI ,  Takashi YAMAUCHI

IPC: H01L21/3105 ,  H01L21/31

CPC classification number: H01L21/0271 ,  H01L21/31138 ,  H01L21/67178 ,  H01L21/67748

Abstract: There is provided a method of processing a substrate using a block copolymer composed of a first polymer containing an oxygen atom and a second polymer containing no oxygen atom, the method including: coating the block copolymer onto the substrate on which a predetermined pattern is formed; phase-separating the block copolymer into the first polymer and the second polymer; and heating the substrate in a low oxygen atmosphere to selectively remove the first polymer from the phase-separated block copolymer.

Abstract translation: 提供了使用由含有氧原子的第一聚合物和不含氧原子的第一聚合物构成的嵌段共聚物来处理基板的方法，该方法包括：将嵌段共聚物涂布到其上形成有规定图案的基板上; 将嵌段共聚物相分离成第一聚合物和第二聚合物; 并在低氧气氛中加热该衬底以选择性地从相分离的嵌段共聚物中除去第一种聚合物。