公开(公告)号：US20190252198A1

公开(公告)日：2019-08-15

申请号：US16315812

申请日：2017-07-04

申请人： TOKYO ELECTRON LIMITED

发明人： Shinya MORIKITA ,  Takanori BANSE ,  Yuta SEYA ,  Ryosuke NIITSUMA

IPC分类号： H01L21/3065 ,  H01L21/308 ,  H01L21/311

摘要： A method MT according to an embodiment provides a technique capable of controlling a pattern shape during processing of an organic film and the like. A wafer W as an object to which the method MT in the embodiment is applied includes an etching target layer EL, an organic film OL, and a mask ALM, the organic film OL is constituted by a first region VL1 and a second region VL2, the mask ALM is provided on the first region VL1, the first region VL1 is provided on the second region VL2, and the second region VL2 is provided on the etching target layer EL. In the method MT, the first region VL1 is etched to reach the second region VL2 by generating a plasma of a gas containing nitrogen gas in the processing container 12 in which the wafer W is accommodated, a mask OLM1 is formed from the first region VL1, a protective film SX is conformally formed on a side surface SF of the mask OLM1, the second region VL2 is etched to reach the etching target layer EL to form a mask OLM2 from the second region VL2.

公开(公告)号：US20160172212A1

公开(公告)日：2016-06-16

申请号：US14959049

申请日：2015-12-04

申请人： TOKYO ELECTRON LIMITED

发明人： Ryosuke NIITSUMA ,  Haruto KANAMORI

IPC分类号： H01L21/311

CPC分类号： H01L21/31116 ,  H01J37/32027 ,  H01J37/32467 ,  H01L21/3065 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/32137 ,  H01L21/32139

摘要： A plasma processing method uses a plasma processing apparatus including a processing chamber, a mounting table provided in the processing chamber and configured to support a target object, and a ceiling member made of silicon and provided above the mounting table. The plasma processing method includes loading the target object into the processing chamber and generating a plasma of a processing gas containing chlorine gas and oxygen gas in the processing chamber.

摘要翻译： 等离子体处理方法使用等离子体处理装置，其包括处理室，设置在处理室中并被配置为支撑目标物体的安装台，以及设置在安装台上方的由硅制成的顶板构件。 等离子体处理方法包括将目标物体装载到处理室中，并在处理室中产生含有氯气和氧气的处理气体的等离子体。

公开(公告)号：US20160035541A1

公开(公告)日：2016-02-04

申请号：US14813207

申请日：2015-07-30

申请人： TOKYO ELECTRON LIMITED

发明人： Shinichi KOZUKA ,  Ryosuke NIITSUMA ,  Manabu ISHIKAWA

IPC分类号： H01J37/32

CPC分类号： H01J37/3244 ,  H01J37/32091 ,  H01J37/3266 ,  H01J2237/334

摘要： Disclosed is a plasma processing apparatus including: a processing container; a support member provided within the processing container and configured to support a processing target substrate; and a gas supply member including a first region formed with a gas supply hole, a second region not formed with a gas supply hole, and a third region formed with a gas supply holes. The first to third regions are disposed sequentially from a central portion side of the processing target substrate along a radial direction of the processing target substrate, and the plasma processing apparatus is processed to introduce a processing gas from the gas supply holes of the gas supply member for plasma processing of the processing target substrate into the processing container.

摘要翻译： 一种等离子体处理装置，包括：处理容器; 支撑构件，设置在处理容器内并构造成支撑处理目标衬底; 以及气体供给构件，其包括形成有气体供给孔的第一区域，没有形成有气体供给孔的第二区域和形成有气体供给孔的第三区域。 第一至第三区域沿着处理对象基板的径向方向从处理对象基板的中央部侧依次配置，对等离子体处理装置进行处理，从气体供给部件的气体供给孔导入处理气体 用于将处理目标基板等离子体处理到处理容器中。

公开(公告)号：US20180197720A1

公开(公告)日：2018-07-12

申请号：US15865841

申请日：2018-01-09

申请人： TOKYO ELECTRON LIMITED

发明人： Shinya MORIKITA ,  Takanori BANSE ,  Takahisa IWASAKI ,  Ryosuke NIITSUMA ,  Hiroki TAOKA

IPC分类号： H01J37/32 ,  C23C16/44 ,  B08B7/00

摘要： In a plasma processing method, a carbon-containing film is formed on surfaces of components in a chamber by using a plasma of a carbon-containing gas, and a silicon-containing film whose film thickness is determined based on a film thickness of the carbon-containing film is formed on a surface of the carbon-containing film by a silicon-containing gas. Then, a target object is loaded into the chamber and processed by a plasma of a processing gas after the formation of the silicon-containing film. The silicon-containing film is removed from the surface of the carbon-containing film by using a plasma of a fluorine-containing gas after the target object processed by the plasma is unloaded from the chamber, and the carbon-containing film is removed from the surfaces of the components by using a plasma of an oxygen-containing gas.

公开(公告)号：US20170345666A1

公开(公告)日：2017-11-30

申请号：US15605531

申请日：2017-05-25

申请人： TOKYO ELECTRON LIMITED

发明人： Shinya MORIKITA ,  Ryosuke NIITSUMA ,  Weichien CHEN

IPC分类号： H01L21/3065 ,  H01L21/67 ,  H01L21/311 ,  H01L21/308 ,  H01J37/32 ,  H01L21/683

CPC分类号： H01L21/3065 ,  H01J37/32449 ,  H01J37/32532 ,  H01J37/32541 ,  H01J37/3255 ,  H01J37/32559 ,  H01J37/32568 ,  H01J37/32715 ,  H01J37/32724 ,  H01J2237/3341 ,  H01L21/0273 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/32139 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/6831

摘要： Disclosed is a plasma processing method for processing a workpiece that includes: a silicon-containing etching target layer, an organic film provided on the etching target layer, an antireflective film provided on the organic layer, and a first mask provided on the antireflective layer, using a plasma processing apparatus having a processing container. The plasma processing method includes: etching the antireflective film using plasma generated in the processing container and the first mask to form a second mask from the antireflective film; etching the organic film using plasma generated in the processing container and the second mask to form a third mask from the organic film; generating plasma of a mixed gas including the first gas and the second gas in the processing container; and etching the etching target layer using plasma generated in the processing container and the third mask.

公开(公告)号：US20170221684A1

公开(公告)日：2017-08-03

申请号：US15484264

申请日：2017-04-11

申请人： TOKYO ELECTRON LIMITED

发明人： Masaru NISHINO ,  Takao FUNAKUBO ,  Shinichi KOZUKA ,  Ryosuke NIITSUMA ,  Tsutomu ITO

IPC分类号： H01J37/32 ,  B08B7/00

CPC分类号： H01J37/32862 ,  B08B7/0035 ,  C23C16/4405 ,  H01J37/32091 ,  H01J37/32477 ,  H01J37/32642 ,  H01J2237/334 ,  H01J2237/3344 ,  H01L21/3065 ,  H01L21/31116

摘要： A plasma processing method includes removing a deposit, which adheres to a member within a processing vessel and includes at least one of a transition metal and a base metal, by plasma of a processing gas, wherein the processing gas includes Ar gas and a CHzFw gas, and does not includes a chlorine-based gas and a nitrogen-based gas. The deposit is removed by the plasma of the processing gas while applying a negative DC voltage to the member within the processing vessel, and the negative DC voltage is set to be equal to or less than −100V such that argon ions in the plasma of the processing gas collide with the member within the processing vessel and the deposit is removed by sputtering of the argon ions.

公开(公告)号：US20150118859A1

公开(公告)日：2015-04-30

申请号：US14521737

申请日：2014-10-23

申请人： Tokyo Electron Limited

发明人： Masaru NISHINO ,  Takao FUNAKUBO ,  Shinichi KOZUKA ,  Ryosuke NIITSUMA ,  Tsutomu ITO

IPC分类号： H01L21/3213 ,  H01J37/32 ,  H01L21/67

CPC分类号： H01J37/32862 ,  B08B7/0035 ,  C23C16/4405 ,  H01J37/32091 ,  H01J37/32477 ,  H01J37/32642 ,  H01J2237/334 ,  H01J2237/3344 ,  H01L21/3065 ,  H01L21/31116

摘要： A metal-containing deposit can be efficiently removed. A plasma processing method includes removing a deposit, which adheres to a member within a processing vessel and contains at least one of a transition metal and a base metal, by plasma of a processing gas containing a CxFy gas, in which x is an integer equal to or less than 2 and y is an integer equal to or less than 6, and without containing a chlorine-based gas and a nitrogen-based gas.

摘要翻译： 可以有效地除去含金属的沉积物。 等离子体处理方法包括通过包含C x F y气体的处理气体的等离子体去除沉积物，其沉积在处理容器内并且包含过渡金属和贱金属中的至少一种，其中x是等于 小于2，y为6以下的整数，不含有氯系气体和氮系气体。