公开(公告)号：US12152304B2

公开(公告)日：2024-11-26

申请号：US17028230

申请日：2020-09-22

Applicant: Tokyo Electron Limited

Inventor： Shuji Azumo ,  Shinichi Ike ,  Yumiko Kawano

IPC: C23C16/04 ,  C23C16/40 ,  C23C16/56 ,  H01L21/02

Abstract: A film forming method for forming an object film on a substrate including: providing the substrate including an oxide layer of a first material formed on a layer of the first material formed on a surface of a first area, and a layer of a second material formed on a surface of a second area, the second material being different from the first material; reducing the oxide layer; oxidizing a surface of the layer of the first material after reducing the oxide layer; and forming a self-assembled monolayer on the surface of the layer of the first material by supplying a raw material gas of the self-assembled monolayer after oxidizing the surface of the layer of the first material.

公开(公告)号：US11598001B2

公开(公告)日：2023-03-07

申请号：US17166657

申请日：2021-02-03

Applicant: Tokyo Electron Limited

Inventor： Shuji Azumo ,  Shinichi Ike ,  Yumiko Kawano

IPC: C23C16/04 ,  H01L21/02 ,  C23C16/40 ,  C23C16/455 ,  C23C16/01 ,  C23C16/02 ,  H01L21/8238

Abstract: A film forming method includes: preparing a substrate having a metal layer formed on a surface of a first region and an insulating layer formed on a surface of a second region, wherein the metal layer is formed of a first metal; forming a self-assembled film on a surface of the metal layer by supplying a source gas of the self-assembled film; after forming the self-assembled film, forming an oxide film of a second metal on the insulating layer through an atomic layer deposition method by repeating a supply of a precursor gas containing the second metal and a supply of an oxidizing gas; and reducing an oxide film of the first metal formed on a surface of the first metal by supplying a reducing gas after the supply of the oxidizing gas and before the supply of the precursor gas.

公开(公告)号：US09293543B2

公开(公告)日：2016-03-22

申请号：US14044119

申请日：2013-10-02

Applicant: TOKYO ELECTRON LIMITED ,  OSAKA UNIVERSITY

Inventor： Shuji Azumo ,  Yusaku Kashiwagi ,  Yuichiro Morozumi ,  Yu Wamura ,  Katsushige Harada ,  Kosuke Takahashi ,  Heiji Watanabe ,  Takayoshi Shimura ,  Takuji Hosoi

IPC: H01L21/283 ,  H01L21/441 ,  H01L29/51 ,  H01L29/40 ,  H01L21/04 ,  H01L21/28 ,  H01L21/02 ,  C23C16/30 ,  H01L29/66 ,  H01L29/78 ,  H01L29/16 ,  H01L29/20

CPC classification number: H01L29/401 ,  C23C16/303 ,  C23C16/308 ,  H01L21/02178 ,  H01L21/022 ,  H01L21/02252 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/02326 ,  H01L21/02332 ,  H01L21/044 ,  H01L21/049 ,  H01L21/28264 ,  H01L29/1602 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66045 ,  H01L29/66068 ,  H01L29/66712 ,  H01L29/66734 ,  H01L29/7802 ,  H01L29/7813

Abstract: Provided is a method of forming a gate insulating film for use in a MOSFET for a power device. An AlN film is formed on a SiC substrate of a wafer W and then the formation of an AlO film and the formation of an AlN film on the formed AlO film are repeated, thereby forming an AlON film having a laminated structure in which AlO films and AlN films are alternately laminated. A heat treatment is performed on the AlON film having the laminated structure.

Abstract translation: 提供一种形成用于功率器件的MOSFET的栅极绝缘膜的方法。 在晶片W的SiC衬底上形成AlN膜，然后重复形成AlO膜并在AlO膜上形成AlN膜，从而形成具有层叠结构的AlON膜，其中AlO膜和 AlN膜交替层压。 对具有层叠结构的AlON膜进行热处理。

公开(公告)号：US12183572B2

公开(公告)日：2024-12-31

申请号：US17598175

申请日：2020-03-12

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yumiko Kawano ,  Shuji Azumo ,  Shinichi Ike

IPC: H01L21/02 ,  C23C16/455

Abstract: There is provided a film formation method. The method comprises: preparing a substrate having a first region on which an oxide formed by oxidization of a surface of a conductive material is exposed and a second region on which an insulating material is exposed; replacing a film of the oxide with a film of boron oxide by supplying a boron halide gas to the substrate; etching the boron oxide film in the first region and forming a self-assembled monolayer film in the second region by supplying a gas of a fluorine-containing silane compound to the substrate; and forming a conductive target film selectively in the first region, from the first region and the second region, using the self-assembled monolayer film formed in the second region, the first region having the conductive material exposed thereon.

公开(公告)号：US11830741B2

公开(公告)日：2023-11-28

申请号：US17593065

申请日：2020-02-28

Applicant: Tokyo Electron Limited

Inventor： Shinichi Ike ,  Shuji Azumo ,  Yumiko Kawano ,  Hiroki Murakami

IPC: H01L21/385 ,  H01L21/02 ,  H01L21/285

CPC classification number: H01L21/28568 ,  H01L21/02068 ,  H01L21/02211

Abstract: A method of selectively forming a film on a substrate includes: a preparation process of preparing a substrate having a surface to which a metal film and an insulating film are exposed; a first removal process of removing a natural oxide film on the metal film; a first film forming process of forming a self-assembled monolayer, which suppresses formation of a titanium nitride film, on the insulating film by providing the substrate with a compound for forming the self-assembled monolayer, the compound having a functional group containing fluorine and carbon; a second film forming process of forming a titanium nitride film on the metal film; an oxidation process of oxidizing the surface of the substrate; and a second removal process of removing a titanium oxide film, which is formed on the metal film and the self-assembled monolayer, by providing the surface of the substrate with the compound.

公开(公告)号：US11417514B2

公开(公告)日：2022-08-16

申请号：US16815672

申请日：2020-03-11

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yuichiro Wagatsuma ,  Toyohiro Kamada ,  Shinichi Ike ,  Shuji Azumo

IPC: H01L21/02 ,  C23C16/50 ,  C23C16/52 ,  C23C16/36

Abstract: There is provided a film forming method, including: forming a film containing silicon, carbon and nitrogen on a substrate in a first process; and oxidizing the film with an oxidizing agent containing a hydroxy group and subsequently supplying a nitriding gas to the substrate in a second process.

公开(公告)号：US11788185B2

公开(公告)日：2023-10-17

申请号：US17593074

申请日：2020-03-03

Applicant: Tokyo Electron Limited

Inventor： Shuji Azumo ,  Shinichi Ike ,  Yumiko Kawano

IPC: C23C16/02 ,  C23C16/04 ,  C23C16/448 ,  C23C16/458 ,  C23C16/46 ,  C23C16/52

CPC classification number: C23C16/0281 ,  C23C16/04 ,  C23C16/448 ,  C23C16/458 ,  C23C16/46 ,  C23C16/52

Abstract: A film formation method includes: providing a substrate including a first region in which a first material is exposed and a second region in which a second material different from the first material is exposed; forming an intermediate film selectively in the second region from the first region and the second region by supplying a processing gas to the substrate; forming a self-assembled monolayer in the first region and the second region after forming the intermediate film; removing the intermediate film and the self-assembled monolayer from the second region by heating the substrate to sublimate the intermediate film; and forming, after sublimation of the intermediate film, a target film selectively in the second region from the first region and the second region in a state in which the self-assembled monolayer is left in the first region.

公开(公告)号：US11041239B2

公开(公告)日：2021-06-22

申请号：US16467746

申请日：2017-11-16

Applicant: TOKYO ELECTRON LIMITED

Inventor： Taiki Katou ,  Shuji Azumo ,  Yusaku Kashiwagi

IPC: C23C16/455 ,  C23C16/32 ,  H01L21/02 ,  C23C16/458

Abstract: A method for forming a SiC film on a target substrate by ALD, comprises: activating a surface of the target substrate by activation gas plasma which is plasmatized an activation gas; and forming a SiC film by supplying a source gas containing a precursor represented by a chemical formula RSiX13 or RSiHClX2 onto the target substrate whose the surface is activated by activating the surface of the target substrate, where, R is an organic group having an unsaturated bond, X1 is selected from a group consisting of H, F, Cl, Br and I, and X2 is one selected from a group consisting of Cl, Br and I.

公开(公告)号：US20210398846A1

公开(公告)日：2021-12-23

申请号：US17345245

申请日：2021-06-11

Applicant: Tokyo Electron Limited

Inventor： Kandabara N. Tapily ,  Shuji Azumo ,  Yumiko Kawano ,  Shinichi Ike

IPC: H01L21/768 ,  H01L21/02

Abstract: A substrate processing method for area selective deposition. The method includes providing a substrate containing a metal film, a metal-containing liner, and a dielectric film, exposing the substrate to a plasma-excited cleaning gas containing 1) N2 gas and H2 gas, 2) N2 gas followed by H2 gas, or 3) H2 gas followed by N2 gas, forming a blocking layer on the metal film and on the metal-containing liner, and selectively depositing a material film on the dielectric film.

公开(公告)号：US10790138B2

公开(公告)日：2020-09-29

申请号：US16453138

申请日：2019-06-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Shuji Azumo

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/44

Abstract: There is provided a method for forming a target film on a substrate comprising: preparing the substrate having a first substrate region and a second substrate region that has at least two types of surfaces formed of materials different from a material of the first substrate region; selectively forming, on the surfaces of the second substrate region, an intermediate film capable of adsorbing a first self-assembled monolayer that inhibits formation of the target film on the second substrate region; selectively adsorbing the first self-assembled monolayer on a surface of the intermediate film; and selectively forming the target film on a surface of the first substrate region.