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公开(公告)号：US20240150500A1
公开(公告)日：2024-05-09
申请号：US18500087
申请日：2023-11-01
发明人： Tatsuya YAMAGUCHI , Syuji NOZAWA
CPC分类号： C08F2/34 , C08F2/008 , C08G85/008
摘要： A substrate processing apparatus includes a processing container; a stage on which a substrate is placed, the stage being provided in the processing container; a gas supply provided at a position facing the stage and configured to supply a first processing gas containing a first monomer and a second processing gas containing a second monomer into the processing container to form a film of a polymer on the substrate; and a driver configured to move the stage so as to change a distance between the gas supply and the stage. The gas supply is configured to supply the first processing gas and the second processing gas into a space between the gas supply and the stage from an outside of a region on the stage in which the substrate is placed, when viewed in a direction from the gas supply toward the stage.
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公开(公告)号：US20200083029A1
公开(公告)日：2020-03-12
申请号：US16560151
申请日：2019-09-04
发明人： Syuji NOZAWA , Yoji IIZUKA , Tatsuya YAMAGUCHI
IPC分类号： H01J37/32
摘要： There is provided a substrate processing apparatus including: a chamber in which a target substrate is accommodated; a first gas supply part configured to supply a gas containing a first monomer, and a gas containing a second monomer, which forms a polymer through a polymerization reaction with the first monomer, into the chamber so as to form a film of the polymer on the target substrate; an exhaust device configured to exhaust a gas inside the chamber; a first exhaust pipe configured to connect the chamber and the exhaust device; and an energy supply device configured to supply an energy with respect to a gas flowing through the first exhaust pipe so as to cause an unreacted component of at least one of the first monomer and the second monomer contained in the gas exhausted from the chamber to be reduced in a molecular weight.
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3.发明申请公开(公告)号：US20180261458A1
公开(公告)日：2018-09-13
申请号：US15910463
申请日：2018-03-02
IPC分类号： H01L21/033 , H01L21/027 , H01L21/265 , H01L21/02 , H01L21/67 , H01L21/677
CPC分类号： H01L21/0337 , H01J37/00 , H01L21/02057 , H01L21/0271 , H01L21/033 , H01L21/0332 , H01L21/26513 , H01L21/266 , H01L21/67034 , H01L21/67063 , H01L21/6715 , H01L21/6719 , H01L21/67213 , H01L21/67703 , H01L29/785
摘要： There is provided a semiconductor device manufacturing method including: forming a first mask film composed of a polymer having a urea bond by supplying a raw material to a surface of the substrate for polymerization; forming a second mask inorganic film to be laminated on the first mask film; forming a pattern on the first mask film and the second mask inorganic film and performing an ion implantation on the surface of the substrate; removing the second mask inorganic film after the ion implantation; and removing the first mask film by heating the substrate after the ion implantation and depolymerizing the polymer.
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公开(公告)号：US20240021419A1
公开(公告)日：2024-01-18
申请号：US18332843
申请日：2023-06-12
发明人： Tatsuya YAMAGUCHI , Syuji NOZAWA
CPC分类号： H01J37/32834 , H01J37/32715 , H01J37/32449 , B05D1/60 , H01J2237/20235 , H01J2237/332
摘要： A substrate processing apparatus includes: a processing container; a stage provided in an interior of the processing container to place a substrate on the stage; an exhaust space arranged around the stage along an inner wall of the processing container; a first exhaust path provided between a processing space above the stage and the exhaust space and having a smaller conductance than the processing space; and a second exhaust path provided between a lower space below the stage and the exhaust space and having a smaller conductance than the processing space. A processing gas supplied into the processing space is exhausted via the first exhaust path, a purge gas supplied into the lower space is exhausted via the second exhaust path, and the second exhaust path is connected to the first exhaust path or to a space that is closer to the exhaust space than the first exhaust path.
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公开(公告)号：US20190393083A1
公开(公告)日：2019-12-26
申请号：US16563007
申请日：2019-09-06
IPC分类号： H01L21/768 , H01L21/311 , H01L21/67
摘要： A method of manufacturing a semiconductor device by performing a process on a substrate includes: forming a protective layer made of a polymer having a urea bond by supplying a raw material for polymerization to a surface of a substrate on which a protected film to be protected is formed; forming a sealing film at a first temperature lower than a second temperature at which the polymer is depolymerized so cover a portion where the protective layer is exposed; subsequently, subjecting the substrate to a treatment at a third temperature equal to or higher than the second temperature at which the polymer as the protective layer is depolymerized; subsequently, performing a treatment which causes damage to the protected film when the protective layer is not present; and after the performing a treatment which causes damage to the protected film, depolymerizing the polymer by heating the substrate.
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公开(公告)号：US20190122883A1
公开(公告)日：2019-04-25
申请号：US16165228
申请日：2018-10-19
发明人： Tatsuya YAMAGUCHI , Reiji NIINO , Syuji NOZAWA , Makoto FUJIKAWA
IPC分类号： H01L21/02 , H01L21/027
摘要： There is provided a method of manufacturing a semiconductor device by performing a process on a substrate, comprising: forming a sacrificial film made of a polymer having a urea bond on a surface of the substrate by supplying a precursor for polymerization onto the surface of the substrate; subsequently, performing a step of changing a sectional shape of the sacrificial film and a step of adjusting a film thickness of the sacrificial film by heating the sacrificial film; subsequently, performing the process on the surface of the substrate; and subsequently, removing the sacrificial film.
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公开(公告)号：US20180264516A1
公开(公告)日：2018-09-20
申请号：US15915392
申请日：2018-03-08
IPC分类号： B05D1/00
CPC分类号： B05D1/60 , B05D1/002 , C23C16/4411 , C23C16/45523 , C23C16/45574 , C23C16/45578 , C23C16/45591 , C23C16/45597 , H01L21/02118 , H01L21/02271 , H01L21/67017 , H01L21/67109
摘要： A film forming apparatus includes: a film forming gas discharge part; an exhaust port; a rotation mechanism; a heating part configured to heat the interior of a reaction container to a temperature lower than a temperature of a film forming gas discharged from the film forming gas discharge part; first gas discharge holes opened, in the film forming gas discharge part, toward a gas temperature reducing member so that the film forming gas is cooled by colliding with the gas temperature reducing member inside the reaction container before the film forming gas is supplied to substrates; and second gas discharge holes opened, in the film forming gas discharge part, in a direction differing from an opening direction of the first gas discharge holes so that the film forming gas does not collide with the gas temperature reducing member before the film forming gas is supplied to the substrates.
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公开(公告)号：US20240316592A1
公开(公告)日：2024-09-26
申请号：US18608057
申请日：2024-03-18
发明人： Tatsuya YAMAGUCHI , Syuji NOZAWA
IPC分类号： B05D1/00 , C08G18/50 , C09D175/04
CPC分类号： B05D1/60 , C08G18/5045 , C09D175/04 , B05D2503/00 , C08G2150/50
摘要： A film forming apparatus includes: a first vaporizer configured to vaporize a first monomer containing isocyanate; a second vaporizer configured to vaporize a second monomer that reacts with the first monomer to form a polymer; a first pipe connected to the first vaporizer; a second pipe connected to the second vaporizer; and a chamber having an internal space for accommodating a substrate, connected to the first pipe and the second pipe, and configured to form a polymer film on the substrate by vapor deposition polymerization using the first monomer and the second monomer. The first vaporizer heats the first monomer to a temperature of 120 degrees C. or less. A pressure inside the first vaporizer is equal to or higher than a pressure in the chamber. A differential pressure between the pressure inside the first vaporizer and the pressure in the chamber is 1 Torr or less.
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公开(公告)号：US20230383407A1
公开(公告)日：2023-11-30
申请号：US18324469
申请日：2023-05-26
发明人： Naoki UMEHARA , Syuji NOZAWA , Ryohei YONEDA , Tatsuya YAMAGUCHI
IPC分类号： C23C16/458 , C23C16/44 , C23C16/455
CPC分类号： C23C16/4585 , C23C16/4412 , C23C16/45565
摘要： A substrate processing apparatus includes: a processing container; a stage provided inside the processing container to place a substrate thereon; an exhaust port arranged around the stage along an inner wall of the processing container; a driver configured to move the stage up and down between a processing position and a transfer position lower than the processing position; a clamp ring that is arranged on a peripheral edge of the substrate on the stage to cover the peripheral edge of the substrate when the stage is at the processing position, and is supported by a shelf provided on a sidewall of the processing container when the stage is at the transfer position; and a pressure regulating mechanism configured to suppress a pressure difference between a space above the substrate on the stage and a space below the stage.
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公开(公告)号：US20210336000A1
公开(公告)日：2021-10-28
申请号：US17237821
申请日：2021-04-22
发明人： Tatsuya YAMAGUCHI , Syuji NOZAWA
IPC分类号： H01L29/06 , H01L21/3105
摘要： A method of manufacturing a semiconductor device is disclosed. The method includes laminating a thermally decomposable organic material on a substrate by supplying a material gas into a container in which the substrate having a first recess and a second recess, which has a wider width than a width of the first recess, are formed, fluidizing the organic material laminated on the substrate by heating the substrate to a first temperature, and removing the organic material laminated in the second recess.
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