公开(公告)号：US08633550B2

公开(公告)日：2014-01-21

申请号：US13531567

申请日：2012-06-24

申请人： Tomoaki Uno ,  Yoshitaka Onaya ,  Hirokazu Kato ,  Ryotaro Kudo ,  Koji Saikusa ,  Katsuhiko Funatsu

发明人： Tomoaki Uno ,  Yoshitaka Onaya ,  Hirokazu Kato ,  Ryotaro Kudo ,  Koji Saikusa ,  Katsuhiko Funatsu

IPC分类号： H01L27/088

CPC分类号： H01L23/49575 ,  H01L23/3107 ,  H01L23/4824 ,  H01L23/49524 ,  H01L23/49562 ,  H01L24/37 ,  H01L24/40 ,  H01L24/73 ,  H01L2224/05554 ,  H01L2224/32245 ,  H01L2224/37011 ,  H01L2224/371 ,  H01L2224/37124 ,  H01L2224/37147 ,  H01L2224/37599 ,  H01L2224/40095 ,  H01L2224/40245 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/73221 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/8385 ,  H01L2224/84801 ,  H01L2224/8485 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/30107 ,  H01L2924/351 ,  H02M3/1588 ,  H02M2001/0009 ,  Y02B70/1466 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/00014

摘要： To improve reliability of a semiconductor deviceA power MOSFET for switching and a sense MOSFET having an area smaller than that of the power MOSFET and configured to detect an electric current flowing through the power MOSFET are formed within one semiconductor chip CPH and the semiconductor chip CPH is mounted over a chip mounting part via an electrically conductive joining material and sealed with a resin. In a main surface of the semiconductor chip CPH, a sense MOSFET region in which the sense MOSFET is formed is located more internally than a source pad PDHS4 of the sense MOSFET region RG2. Furthermore, in the main surface of the semiconductor chip, the sense MOSFET region RG2 is surrounded by a region in which the power MOSFET is formed.

摘要翻译： 提高半导体器件的可靠性在一个半导体芯片CPH和半导体芯片CPH内形成用于开关的功率MOSFET和具有小于功率MOSFET的功率MOSFET并且被配置为检测流过功率MOSFET的电流的感测MOSFET 通过导电接合材料安装在芯片安装部分上并用树脂密封。 在半导体芯片CPH的主表面中，形成感测MOSFET的感测MOSFET区域位于读出MOSFET区域RG2的源极焊盘PDHS4的内部。 此外，在半导体芯片的主表面中，感测MOSFET区域RG2由形成功率MOSFET的区域包围。

公开(公告)号：US09418986B2

公开(公告)日：2016-08-16

申请号：US13589160

申请日：2012-08-19

申请人： Tomoaki Uno ,  Yoshitaka Onaya ,  Hirokazu Kato ,  Ryotaro Kudo ,  Koji Saikusa

发明人： Tomoaki Uno ,  Yoshitaka Onaya ,  Hirokazu Kato ,  Ryotaro Kudo ,  Koji Saikusa

IPC分类号： H01L27/088 ,  H01L23/495 ,  H01L25/16 ,  H02M1/32 ,  H02M3/156 ,  H01L21/8234 ,  H01L23/00 ,  H01L25/07 ,  H02M1/00

CPC分类号： H01L27/088 ,  H01L21/823487 ,  H01L23/49524 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/37 ,  H01L24/40 ,  H01L24/73 ,  H01L25/074 ,  H01L25/16 ,  H01L2224/05554 ,  H01L2224/0603 ,  H01L2224/32245 ,  H01L2224/37011 ,  H01L2224/371 ,  H01L2224/37124 ,  H01L2224/37147 ,  H01L2224/3754 ,  H01L2224/40095 ,  H01L2224/40245 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/73221 ,  H01L2224/73265 ,  H01L2224/8385 ,  H01L2224/84801 ,  H01L2224/8485 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/30107 ,  H02M1/32 ,  H02M3/156 ,  H02M2001/0009 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/00014

摘要： A semiconductor device is improved in reliability. A power MOSFET for switching, and a sense MOSFET for sensing a current flowing in the power MOSFET, which is smaller in area than the power MOSFET, are formed in one semiconductor chip. The semiconductor chip is mounted over a chip mounting portion, and sealed in a resin. To first and second source pads for outputting the current flowing in the power MOSFET, a metal plate is bonded. A third source pad for sensing the source voltage of the power MOSFET is at a position not overlapping the metal plate. A coupled portion between a source wire forming the third pad and another source wire forming the first and second pads is at a position overlapping the metal plate.

摘要翻译： 提高了半导体器件的可靠性。 在一个半导体芯片中形成用于切换的功率MOSFET和用于感测功率MOSFET中流过的电流的感测MOSFET，该功率MOSFET的面积小于功率MOSFET。 半导体芯片安装在芯片安装部分上，并密封在树脂中。 对于用于输出在功率MOSFET中流动的电流的第一和第二源极焊盘，金属板被接合。 用于感测功率MOSFET的源极电压的第三源极焊盘位于与金属板不重叠的位置。 形成第三焊盘的源极线和形成第一和第二焊盘的另一源极之间的耦合部分处于与金属板重叠的位置。

公开(公告)号：US20130001792A1

公开(公告)日：2013-01-03

申请号：US13531567

申请日：2012-06-24

申请人： Tomoaki UNO ,  Yoshitaka Onaya ,  Hirokazu Kato ,  Ryotaro Kudo ,  Koji Saikusa ,  Katsuhiko Funatsu

发明人： Tomoaki UNO ,  Yoshitaka Onaya ,  Hirokazu Kato ,  Ryotaro Kudo ,  Koji Saikusa ,  Katsuhiko Funatsu

IPC分类号： H01L23/48

CPC分类号： H01L23/49575 ,  H01L23/3107 ,  H01L23/4824 ,  H01L23/49524 ,  H01L23/49562 ,  H01L24/37 ,  H01L24/40 ,  H01L24/73 ,  H01L2224/05554 ,  H01L2224/32245 ,  H01L2224/37011 ,  H01L2224/371 ,  H01L2224/37124 ,  H01L2224/37147 ,  H01L2224/37599 ,  H01L2224/40095 ,  H01L2224/40245 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/73221 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/8385 ,  H01L2224/84801 ,  H01L2224/8485 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/30107 ,  H01L2924/351 ,  H02M3/1588 ,  H02M2001/0009 ,  Y02B70/1466 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/00014

摘要： A power MOSFET for switching and a sense MOSFET having an area smaller than that of the power MOSFET and configured to detect an electric current flowing through the power MOSFET are formed within one semiconductor chip CPH and the semiconductor chip CPH is mounted over a chip mounting part via an electrically conductive joining material and sealed with a resin. In a main surface of the semiconductor chip CPH, a sense MOSFET region in which the sense MOSFET is formed is located more internally than a source pad PDHS4 of the sense MOSFET region RG2. Furthermore, in the main surface of the semiconductor chip, the sense MOSFET region RG2 is surrounded by a region in which the power MOSFET is formed.

摘要翻译： 用于开关的功率MOSFET和具有小于功率MOSFET的面积并且被配置为检测流过功率MOSFET的电流的感测MOSFET形成在一个半导体芯片CPH内，并且半导体芯片CPH安装在芯片安装部分 通过导电接合材料并用树脂密封。 在半导体芯片CPH的主表面中，形成感测MOSFET的感测MOSFET区域位于读出MOSFET区域RG2的源极焊盘PDHS4的内部。 此外，在半导体芯片的主表面中，感测MOSFET区域RG2由形成功率MOSFET的区域包围。

公开(公告)号：US08680830B2

公开(公告)日：2014-03-25

申请号：US13229781

申请日：2011-09-12

申请人： Ryotaro Kudo ,  Tomoaki Uno ,  Koji Tateno ,  Hideo Ishii ,  Kazuyuki Umezu ,  Koji Saikusa

发明人： Ryotaro Kudo ,  Tomoaki Uno ,  Koji Tateno ,  Hideo Ishii ,  Kazuyuki Umezu ,  Koji Saikusa

IPC分类号： G05F1/00

CPC分类号： H02M3/158 ,  G06F1/26 ,  H02M3/1584 ,  H02M2003/1586

摘要： Miniaturization of a multiphase type power supply device can be achieved. A power supply control unit in which, for example, a microcontroller unit, a memory unit and an analog controller unit are formed over a single chip, a plurality of PWM-equipped drive units, and a plurality of inductors configure a multiphase power supply. The microcontroller unit outputs clock signals each having a frequency and a phase defined based on a program on the memory unit to the respective PWM-equipped drive units. The analog controller unit detects a difference between a voltage value of a load and a target voltage value acquired via a serial interface and outputs an error amp signal therefrom. Each of the PWM-equipped drive units drives each inductor by a peak current control system using the clock signal and the error amp signal.

摘要翻译： 可以实现多相电源装置的小型化。 电源控制单元，其中例如在单个芯片上形成微控制器单元，存储单元和模拟控制器单元，多个配备PWM的驱动单元和多个电感器构成多相电源。 微控制器单元输出每个具有基于存储器单元上的程序定义的频率和相位到相应的配备有PWM的驱动单元的时钟信号。 模拟控制器单元检测负载的电压值与通过串行接口获取的目标电压值之间的差值，并输出误差放大器信号。 每个配备PWM的驱动单元通过使用时钟信号和误差放大器信号的峰值电流控制系统驱动每个电感器。

公开(公告)号：US09812942B2

公开(公告)日：2017-11-07

申请号：US13347197

申请日：2012-01-10

申请人： Tetsuo Sato ,  Ryotaro Kudo ,  Hideo Ishii ,  Kenichi Nakano

发明人： Tetsuo Sato ,  Ryotaro Kudo ,  Hideo Ishii ,  Kenichi Nakano

IPC分类号： G05F1/00 ,  H02M1/088 ,  H02M3/158 ,  H02M1/00

CPC分类号： H02M1/088 ,  H02M3/158 ,  H02M2001/0054 ,  Y02B70/1491

摘要： A step down convertor with a distributed driving system. In one embodiment, an apparatus is disclosed that includes an inductor coupled to an output node. The apparatus also includes first and second circuits. The first circuit can transmit current to the output node via the inductor, and the second can transmit current to the output node via the inductor. The apparatus also includes a third circuit for modifying operational aspects of the first circuit or the second circuit based on a magnitude of current flowing through the inductor.

公开(公告)号：US08360636B2

公开(公告)日：2013-01-29

申请号：US12574588

申请日：2009-10-06

申请人： Tetsuo Sato ,  Ryotaro Kudo

发明人： Tetsuo Sato ,  Ryotaro Kudo

IPC分类号： G01K7/00

CPC分类号： G01K7/00 ,  G01K1/026 ,  G01K3/00 ,  G01K7/01 ,  G01K2003/145 ,  G06F1/206 ,  G06F1/26 ,  H01L23/34 ,  H01L2924/0002 ,  H05K1/0201 ,  H05K1/0262 ,  H05K2201/10151 ,  H05K2201/10166 ,  H05K2203/163 ,  Y02D10/16 ,  H01L2924/00

摘要： An apparatus, in one embodiment, can include a configuration including a plurality of heat generation devices. The apparatus also includes a plurality of thermal sensors respectively, operably connected to each of the plurality of heat generation devices, wherein each thermal sensor of the plurality of thermal sensors includes a respective output terminal configured to provide a voltage representative of the temperature of the respective heat generation device. The apparatus further includes an output circuit configured to output the highest temperature information among the heat generation devices. The output terminals of the plurality of thermal sensors are tied together. A corresponding method is also discussed.

摘要翻译： 在一个实施例中，装置可以包括包括多个发热装置的构造。 该装置还包括分别可操作地连接到多个发热装置中的每一个的多个热传感器，其中多个热传感器中的每个热传感器包括相应的输出端子，其被配置为提供代表相应 发热装置。 该装置还包括：输出电路，被配置为在发热装置之间输出最高温度信息。 多个热传感器的输出端子被连接在一起。 还讨论了相应的方法。

公开(公告)号：US20130002313A1

公开(公告)日：2013-01-03

申请号：US13613359

申请日：2012-09-13

申请人： KYOICHI HOSOKAWA ,  Ryotaro Kudo ,  Toshio Nagasawa ,  Koji Tateno

发明人： KYOICHI HOSOKAWA ,  Ryotaro Kudo ,  Toshio Nagasawa ,  Koji Tateno

IPC分类号： H03K3/00

CPC分类号： H02M3/1588 ,  G05F1/44 ,  H02M7/538 ,  H03F3/217 ,  H03F2200/351 ,  H03F2200/78 ,  H03K17/063 ,  H03K17/687 ,  Y02B70/1466

摘要： In a switching power source which controls a current which flows in an inductor through a switching element which performs a switching operation in response to a PWM signal, and forms an output voltage by a capacitor which is provided in series in the inductor, a booster circuit which is constituted of a bootstrap capacity and a MOSFET is provided between an output node of the switching element and a predetermined voltage terminal. The boosted voltage is used as an operational voltage of a driving circuit of the switching element, another source/drain region and a substrate gate are connected with each other, and a junction diode between one source/drain region and the substrate gate is inversely directed with respect to the boosted voltage which is formed by the bootstrap capacity.

摘要翻译： 在开关电源中，其通过响应于PWM信号进行开关动作的开关元件来控制在电感器中流动的电流，并且通过串联设置在电感器中的电容器形成输出电压， 在开关元件的输出节点和预定的电压端子之间设置由自举电容构成的MOSFET和MOSFET。 升压电压用作开关元件的驱动电路的工作电压，另一个源极/漏极区域和衬底栅极彼此连接，并且在一个源极/漏极区域和衬底栅极之间的结二极管被反向导向 相对于由自举容量形成的升压电压。

公开(公告)号：US08063620B2

公开(公告)日：2011-11-22

申请号：US13023560

申请日：2011-02-09

申请人： Kyoichi Hosokawa ,  Ryotaro Kudo ,  Toshio Nagasawa ,  Koji Tateno

发明人： Kyoichi Hosokawa ,  Ryotaro Kudo ,  Toshio Nagasawa ,  Koji Tateno

IPC分类号： G05F1/40 ,  G05F1/10

CPC分类号： H02M3/1588 ,  G05F1/44 ,  H02M7/538 ,  H03F3/217 ,  H03F2200/351 ,  H03F2200/78 ,  H03K17/063 ,  H03K17/687 ,  Y02B70/1466

摘要： The present invention provides a switching power source and a semiconductor integrated circuit which realize an acquisition a sufficient driving voltage of a high-potential side switching element M1 even when a power source voltage VDD is low. In a switching power source which controls a current which flows in an inductor through a switching element which performs a switching operation in response to a PWM signal, and forms an output voltage by a capacitor which is provided in series in the inductor, a booster circuit which is constituted of a bootstrap capacity and a MOSFET is provided between an output node of the switching element and a predetermined voltage terminal, the boosted voltage is used as an operational voltage of a driving circuit of the switching element, another source/drain region and a substrate gate are connected with each other such that when the MOSFET is made to assume an OFF state, and a junction diode between one source/drain region and the substrate gate is inversely directed with respect to the boosted voltage which is formed by the bootstrap capacity.

公开(公告)号：US07859326B2

公开(公告)日：2010-12-28

申请号：US12216733

申请日：2008-07-10

申请人： Toshio Nagasawa ,  Ryotaro Kudo

发明人： Toshio Nagasawa ,  Ryotaro Kudo

IPC分类号： H01J19/82

CPC分类号： H02M3/156 ,  Y10T307/826

摘要： A switching power supply device performs a stable operation with fast response for a semiconductor integrated circuit device. A capacitor is provided between the output side of an inductor and a ground potential. A first power MOSFET supplies an electric current from an input voltage to the input side of the inductor. A second power MOSFET turned on when the first power MOSFET is off allows the input side of the inductor to be of a predetermined potential. A first feedback signal corresponding to an output voltage obtained from the output side of the inductor and a second feedback signal corresponding to an electric current flowed to the first power MOSFET are used to form a PWM signal. The first power MOSFET has plural cells of a vertical type MOS-construction.

摘要翻译： 开关电源装置对半导体集成电路装置进行快速响应的稳定运行。 在电感器的输出侧和地电位之间提供电容器。 第一功率MOSFET将电流从输入电压提供给电感器的输入侧。 当第一功率MOSFET关断时，第二个功率MOSFET导通，允许电感器的输入侧处于预定电位。 使用对应于从电感器的输出侧获得的输出电压的第一反馈信号和对应于流向第一功率MOSFET的电流的第二反馈信号来形成PWM信号。 第一功率MOSFET具有垂直型MOS结构的多个单元。

公开(公告)号：US20100277143A1

公开(公告)日：2010-11-04

申请号：US12834565

申请日：2010-07-12

申请人： Ryotaro Kudo ,  Toshio Nagasawa

发明人： Ryotaro Kudo ,  Toshio Nagasawa

IPC分类号： G05F1/10

CPC分类号： H02M3/1584 ,  Y10S323/901

摘要： To provide a power supply unit capable of realizing a multiphase power supply at low cost. For example, each of a plurality of semiconductor devices DEV[1]-DEV[n] comprises a trigger input terminal TRG_IN, a trigger output terminal TRG_OUT, and a timer circuit TM that delays a pulse signal input from TRG_IN and outputs it to TRG_OUT. DEV[1]-DEV[n] are mutually coupled in a ring shape by its own TRG_IN being coupled to TRG_OUT of one semiconductor device other than itself. Each of DEV[1]-DEV[n] performs switching operation by using the pulse signal from TRG_IN as a starting point, and feeds a current into an inductor L corresponding to itself. Moreover, DEV[1] generates the above-described pulse signal only once during startup by a start trigger terminal ST being set to a ground voltage GND, for example.

摘要翻译： 提供能够以低成本实现多相电源的电源单元。 例如，多个半导体器件DEV [1] -DEV [n]中的每一个包括触发输入端子TRG_IN，触发输出端子TRG_OUT和延迟从TRG_IN输入的脉冲信号并将其输出到TRG_OUT的定时器电路TM 。 DEV [1] -DEV [n]通过其自身的TRG_IN相互耦合成环形，其耦合到除了​​自身之外的一个半导体器件的TRG_OUT。 DEV [1] -DEV [n]中的每一个通过使用来自TRG_IN的脉冲信号作为起始点进行开关操作，并且将电流馈送到对应于其自身的电感器L. 此外，DEV [1]例如由启动触发端子ST被设置为接地电压GND而在启动期间仅产生上述脉冲信号。