公开(公告)号：US5329135A

公开(公告)日：1994-07-12

申请号：US140816

申请日：1993-10-21

申请人： Tomoji Terakado

发明人： Tomoji Terakado

IPC分类号： H01L33/06 ,  H01L33/10 ,  H01L33/14 ,  H01L33/30 ,  H01L33/40 ,  H01L33/46 ,  H01S5/32 ,  H01S5/323 ,  H01L29/00 ,  H01L31/12 ,  H01L33/00 ,  H01S3/18

CPC分类号： H01L33/30 ,  H01S5/3235 ,  H01S5/3201 ,  H01S5/3211 ,  H01S5/32391

摘要： A light emitting device has an indium gallium arsenide phosphide luminescent layer between a first clad layer of n-type indium phosphide and a second clad layer of p-type indium phosphide, and a strained barrier layer of p-type indium aluminum arsenide is inserted between the luminescent layer and the second clad layer so as to increase the potential barrier therebetween, thereby improving the luminous efficiency and the saturation point of the light output.

摘要翻译： 发光器件在n型磷化铟的第一覆盖层和p型磷化铟的第二覆盖层之间具有铟镓砷化镓发光层，并且将p型砷化铝铝的应变阻挡层插入在 发光层和第二覆盖层，以增加其间的势垒，从而提高光输出的发光效率和饱和点。

公开(公告)号：US5398255A

公开(公告)日：1995-03-14

申请号：US251215

申请日：1994-05-31

申请人： Tomoji Terakado

发明人： Tomoji Terakado

IPC分类号： H01S5/00 ,  H01S5/22 ,  H01S5/227 ,  H01S5/323 ,  H01S3/19

CPC分类号： H01S5/227 ,  H01S5/2206 ,  H01S5/2275 ,  H01S5/32391

摘要： A semiconductor laser having a mesa stripe structure with two sides thereof buried by layers comprises a p-InP buried layer, a p-InP current blocking layer, an InGaAsP current blocking layer, and an n-InP current blocking layer. The n-InP current blocking layer is electrically independent by being isolated by the p-InP current blocking layer and the p-InP buried layer which are in touch with each other at the two sides of the mesa stripe structure. With this arrangement, the leakage current is reduced enabling to improve temperature characteristics even at a temperature above 85 degrees.

摘要翻译： 具有其两侧掩埋的台面条状结构的半导体激光器包括p-InP掩埋层，p-InP电流阻挡层，InGaAsP电流阻挡层和n-InP电流阻挡层。 通过在台面条状结构的两侧彼此接触的p-InP电流阻挡层和p-InP掩埋层隔离，n-InP电流阻挡层是电独立的。 通过这种布置，即使在高于85度的温度下也能够降低泄漏电流，从而能够改善温度特性。

公开(公告)号：US4829346A

公开(公告)日：1989-05-09

申请号：US140849

申请日：1988-01-05

申请人： Kensuke Kasahara ,  Tomoji Terakado ,  Yasumasa Inomoto ,  Akira Suzuki ,  Tomohiro Itoh

发明人： Kensuke Kasahara ,  Tomoji Terakado ,  Yasumasa Inomoto ,  Akira Suzuki ,  Tomohiro Itoh

IPC分类号： H01L21/20 ,  H01L27/144 ,  H01L27/15 ,  H01L29/10 ,  H01L29/812 ,  H01S5/026

CPC分类号： H01L27/1443 ,  H01L21/02381 ,  H01L21/02392 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02546 ,  H01L27/15 ,  H01L29/1075 ,  H01L29/812 ,  H01S5/0261

摘要： A field-effect transistor comprises a semi-insulating InP substrate, a strained buffer layer of Al.sub.X Ga.sub.1-X As grown on the substrate, and an active layer of GaAs. The active layer is eased in regard to the influence of the lattice mismatching between the active layer and substrate. Such a field-effect transistor is associated with an optical device in a monolithic manner on a common semi-insulating InP substrate.

摘要翻译： 场效应晶体管包括半绝缘InP衬底，在衬底上生长的AlXGa1-XAs的应变缓冲层和GaAs的有源层。 关于活性层和衬底之间的晶格失配的影响，活性层得到缓解。 这种场效应晶体管以共模半绝缘InP衬底的整体方式与光学器件相关联。

公开(公告)号：US5382543A

公开(公告)日：1995-01-17

申请号：US95868

申请日：1993-07-22

申请人： Takahiro Nakamura ,  Tomoji Terakado

发明人： Takahiro Nakamura ,  Tomoji Terakado

IPC分类号： H01S5/00 ,  H01S5/042 ,  H01S5/227 ,  H01L21/205

CPC分类号： H01S5/227 ,  H01S5/2272 ,  Y10S148/095

摘要： In a method of manufacturing a semiconductor device, first strip dielectrics (33) and surfaces (35) were formed by taking first strip parts (31) of a dielectric layer (29) away from a principal surface (13) of a semiconductor substrate (11) in parallel by using a photo-lithography method. Active regions (43) were formed on the first strip surfaces (35) by using a metal organic vapor phase epitaxy method to be covered with lattice planes each of which is (111)B. Second strip dielectrics (35) and surfaces (47) were formed by taking second strip parts (31a) of the first strip dielectrics (31) away from the principal surface (13) with the second strip surfaces (47) positioned between the active regions (43) and the second strip dielectrics (45). Current block regions (57) were formed on the second strip surfaces (47) and the active regions (43) by using the metal organic vapor phase epitaxy method.

摘要翻译： 在制造半导体器件的方法中，通过将电介质层（29）的第一条带部分（31）远离半导体衬底（13）的主表面（13）形成第一带状电介质（33）和表面（35） 11）通过使用光刻法并行。 通过使用金属有机气相外延法在第一条带表面（35）上形成活性区域（43）以覆盖每个（111）B的晶格面。 通过使第一带状电介质（31）的第二带状部分（31a）远离主表面（13）形成第二带状电介​​质（35）和表面（47），其中第二带状表面（47）位于活性区域 （43）和第二带状电介​​质（45）。 通过使用金属有机气相外延法在第二条形表面（47）和有源区（43）上形成电流阻挡区（57）。

公开(公告)号：US4698821A

公开(公告)日：1987-10-06

申请号：US733683

申请日：1985-05-14

申请人： Tomoji Terakado ,  Yuichi Odagiri

发明人： Tomoji Terakado ,  Yuichi Odagiri

IPC分类号： H01L27/15 ,  H01L27/14 ,  H01L31/153 ,  H01S5/00 ,  H01S5/026 ,  H03K17/94 ,  H01S3/19

CPC分类号： H01S5/0262 ,  H01L31/153 ,  H03K17/941 ,  H01S5/0261 ,  H01S5/0264

摘要： An integrated light amplifier in which a stripe laser is formed over a substrate and then a vertical phototransistor is formed over the laser. Electrodes are attached to the back of the substrate and to the top of the phototransistor with the phototransistor electrode being formed with a hole so that incident light can reach the phototransistor. Before formation of the substrate electrode, the substrate can be ground to the desired thickness. Photocarriers are detected and multiplied in the phototransistor and injected into the stripe laser. Additional electrodes may be provided over the laser in order to bias the laser independently of the incident light.

摘要翻译： 一种集成光放大器，其中在衬底上形成条纹激光，然后在激光上形成垂直光电晶体管。 电极被附着到基片的背面和光电晶体管的顶部，光电晶体管电极形成有孔，使得入射光可以到达光电晶体管。 在形成衬底电极之前，可以将衬底研磨成所需的厚度。 检测光载流子并在光电晶体管中倍增并注入条形激光器。 可以在激光器之上提供附加电极，以便独立于入射光来偏置激光。

公开(公告)号：US5825047A

公开(公告)日：1998-10-20

申请号：US307036

申请日：1994-09-16

申请人： Akira Ajisawa ,  Tomoji Terakado ,  Masayuki Yamaguchi ,  Keiro Komatsu

发明人： Akira Ajisawa ,  Tomoji Terakado ,  Masayuki Yamaguchi ,  Keiro Komatsu

IPC分类号： G02F1/015 ,  G02F1/025 ,  H01L31/0224 ,  H01L31/105 ,  H01S5/026 ,  H01S5/042 ,  H01L21/20 ,  H01L21/205

CPC分类号： G02F1/025 ,  H01L31/022408 ,  H01L31/105 ,  G02F2001/0157 ,  H01S5/0265 ,  H01S5/0425 ,  H01S5/2224

摘要： An optical semiconductor device comprises a stripe-mesa structure provided on a semi-insulating substrate. The stripe-mesa structure comprises an undoped light absorption layer sandwiched by cladding layers, and by burying layers on both sides. With this structure, the device capacitance is decreased to provide wide bandwidth and ultra-high speed operation properties. This device can be applied to an optical modulator, an integrated type optical modulator, and an optical detector.

摘要翻译： 光学半导体器件包括设置在半绝缘衬底上的条状台面结构。 条状台面结构包括被覆层夹着的未掺杂的光吸收层，并且通过在两侧上埋设层。 利用这种结构，器件电容降低，提供宽带宽和超高速操作特性。 该装置可以应用于光调制器，集成型光调制器和光检测器。

公开(公告)号：US5636237A

公开(公告)日：1997-06-03

申请号：US595169

申请日：1996-01-30

申请人： Tomoji Terakado ,  Toshitaka Torikai

发明人： Tomoji Terakado ,  Toshitaka Torikai

IPC分类号： H01S5/00 ,  H01S5/22 ,  H01S5/227 ,  H01S5/323 ,  H01S3/19

CPC分类号： H01S5/227 ,  H01S5/2205 ,  H01S5/2209 ,  H01S5/2224 ,  H01S5/2275 ,  H01S5/32391

摘要： In a laser device in which a first cladding layer (11b) of InP of p-type, an active layer (12) of InGaAsP, and a second cladding layer (13) of InP of n-type are successively formed on a predetermined area of a base layer (10, 11a) of InP of p-type, a current confining structure includes, to confine a current in the active layer, a pair of first buried layers (14) of InP of p-type on a remaining area of the base layer, a pair of first current blocking layers (15) of InP of n-type on the pair of first buried layers, a pair of second current blocking layers (16) of a semi-insulating InP on the pair of first current blocking layers, and a second buried layer (17) of InP of n-type on the pair of second current blocking layers. The pair of first buried layers have a pair of projecting portions (14a) projecting over inner edge portions of the pair of first buried layers with the first cladding, the active, and the second cladding layers interposed between the pair of projecting portions and with the pair of projecting portions brought into contact with side surfaces of the active layer and with inner edge portions of the pair of second current blocking layers so that the pair of first current blocking layers are electrically isolated from the active layer. Instead of the pair of second current blocking layers, a pair of low carrier concentration layers (22) of InP of n-type (or p-type) and a pair of current blocking layers (23) of p-type may be successively formed on the pair of first current blocking layers.

摘要翻译： 在具有p型InP的第一包层（11b），InGaAsP的有源层（12）和n型InP的第二包层（13）依次形成在规定区域上的激光装置 的p型InP的基底层（10,11a），电流限制结构包括：将有源层中的电流限制在剩余区域上的一对p型InP的第一掩埋层（14） ，在一对第一掩埋层上的n型InP的一对第一电流阻挡层（15），一对第一绝缘InP上的半绝缘InP的一对第二电流阻挡层（16） 电流阻挡层，以及在该对第二电流阻挡层上的n型InP的第二掩埋层（17）。 一对第一掩埋层具有一对突出部分（14a），该突出部分（14a）突出在一对第一掩埋层的内边缘部分上，其中第一包层，有源层和第二覆层位于一对突出部分之间， 一对突出部分与有源层的侧表面和一对第二电流阻挡层的内边缘部分接触，使得该对第一电流阻挡层与有源层电隔离。 代替一对第二电流阻挡层，可以依次形成n型（或p型）的InP的一对低载流子浓度层（22）和p型的一对电流阻挡层（23） 在一对第一电流阻挡层上。

公开(公告)号：US5309467A

公开(公告)日：1994-05-03

申请号：US957798

申请日：1992-10-08

申请人： Tomoji Terakado

发明人： Tomoji Terakado

IPC分类号： H01S5/00 ,  H01S5/042 ,  H01S5/20 ,  H01S5/227 ,  H01S5/32 ,  H01S5/323 ,  H01S3/19

CPC分类号： H01S5/227 ,  H01S5/3235 ,  H01S5/2004 ,  H01S5/2275 ,  H01S5/3211 ,  H01S5/32391

摘要： A semiconductor laser having a buried stripe structure is provided, which comprises a first cladding layer of InP, an active layer containing at least an InGaAsP or InGaAs layer, a barrier layer of In.sub.1-x Al.sub.x As (x=0.48 to 1.00), a second cladding layer of InP, a mesa-shaped stripe portion composed of the first cladding layer, active layer, barrier layer and second cladding layer, and a pair of buried layers disposed on both sides of the stripe portion so as to bury the same therebetween formed in this order on an InP substrate. The hetero barrier of conduction band between the active and barrier layers is increased by the barrier layer when an electric current is injected, thus being capable of restricting the electrons injected into the active layer to be leaked to the second cladding layer. It is preferable that a second barrier layer of In.sub.1-x Al.sub.x As (x=0.48 to 1.00) is disposed on each side of the stripe portion.

摘要翻译： 提供了具有掩埋条纹结构的半导体激光器，其包括InP的第一包层，至少包含InGaAsP或InGaAs层的有源层，In 1-x Al x As（x = 0.48至1.00）的势垒层，第二包层 InP层，由第一包层，有源层，阻挡层和第二包层组成的台面状条纹部分，以及设置在条状部分两侧的一对掩埋层，以便将它们埋在其间形成 这个顺序在InP衬底上。 当注入电流时，有源屏障层和阻挡层之间的导带的异质势垒被阻挡层增加，从而能够限制注入有源层的电子泄漏到第二覆层。 In1-xAlxAs（x = 0.48〜1.00）的第二阻挡层优选设置在条状部分的每侧。