公开(公告)号：US20080272998A1

公开(公告)日：2008-11-06

申请号：US10571911

申请日：2005-07-15

申请人： Tomoya Yano ,  Yoshiki Shirochi ,  Toshinobu Isobe ,  Makio Iida

发明人： Tomoya Yano ,  Yoshiki Shirochi ,  Toshinobu Isobe ,  Makio Iida

IPC分类号： G09G3/36

CPC分类号： G09G3/3611 ,  G09G3/2018 ,  G09G3/2051 ,  G09G3/2055 ,  G09G3/3607 ,  G09G3/3696 ,  G09G2320/0242 ,  G09G2320/0247 ,  G09G2320/0276 ,  G09G2320/028 ,  G09G2320/0613 ,  G09G2320/0673

摘要： An image display device and an image display method able to display a middle gray-scale by using a plurality of pixels or fields and, at the same time, improve viewing angle characteristics are provided. When displaying an image via a direct view type liquid crystal display screen, a gray-scales of an input video signal is converted to characteristic values (transmittances) of pixels two-dimensionally arranged with respect to the display image, and the gray-scale is converted so as to include, among a plurality of pixels or fields expressing a middle gray-scale, at least one pixel or field converted to a first characteristic value obtained by adding a positive correction value to the gray-scale of the input video signal, and at least one pixel or field converted to a second characteristic value obtained by adding a negative correction value to the gray-scale of the input video signal.

摘要翻译： 提供了能够通过使用多个像素或场来显示中间灰度并且同时改善视角特性的图像显示装置和图像显示方法。 当通过直视型液晶显示屏显示图像时，将输入视频信号的灰度转换为相对于显示图像二维布置的像素的特征值（透射率），灰度级 转换成在表示中间灰度的多个像素或场中包括转换成通过将正校正值与输入视频信号的灰度相加而获得的第一特征值的至少一个像素或场， 以及转换成通过将负校正值与输入视频信号的灰度相加而获得的第二特征值的至少一个像素或场。

公开(公告)号：US08063863B2

公开(公告)日：2011-11-22

申请号：US11662842

申请日：2006-06-15

申请人： Tomoya Yano ,  Makio Iida ,  Yoshiki Shirochi

发明人： Tomoya Yano ,  Makio Iida ,  Yoshiki Shirochi

IPC分类号： G09G3/36 ,  G09G5/10

CPC分类号： G09G3/2025 ,  G09G3/3607 ,  G09G3/3614 ,  G09G3/3688 ,  G09G2320/0252 ,  G09G2320/0261 ,  G09G2320/0271 ,  G09G2320/0276 ,  G09G2320/028 ,  G09G2320/0673 ,  G09G2340/0435 ,  G09G2340/16

摘要： A picture display apparatus exploiting a liquid crystal display is disclosed. This picture display apparatus (10) includes an interpolator (11), an over-drive unit (12), an angle of visibility improvement unit (13), and a source driver (15) for driving a liquid crystal display panel (16). The interpolator converts the picture rate upwardly. The angle of visibility improvement unit (13) converts an input picture signal into a picture signal representing a grayscale level of the input picture signal by synthesis of liquid crystal transmittances of a plural number of temporally consecutive fields. Specifically, the angle of visibility improvement unit converts the input picture signal to a picture signal made up of a first field set to a signal value related with a high grayscale level and a second field set to a signal value related with a low grayscale level. In case time changes of the grayscale level have occurred in the input picture signal at the same spatial position, the over-drive unit (12) corrects the driving level for a signal value of one or both of the first and second fields depending on response of the liquid crystal.

摘要翻译： 公开了一种利用液晶显示器的图像显示装置。 该图像显示装置（10）包括内插器（11），过驱动单元（12），可视度改善单元（13）的角度和用于驱动液晶显示面板（16）的源极驱动器（15） 。 内插器向上转换图像速率。 可见度改善单元（13）的角度通过合成多个时间上连续的场的液晶透射率将输入图像信号转换成表示输入图像信号的灰度级的图像信号。 具体地说，视角改善单元将输入图像信号转换成由设置为与灰度级高的灰度级相关的信号值的第一场组成的图像信号和与低灰度级相关的信号值设定的第二场。 在相同空间位置的输入图像信号中发生灰度级变化的情况下，过驱动单元（12）根据响应来校正第一和第二场中的一个或两个的信号值的驱动电平 的液晶。

公开(公告)号：US20080284699A1

公开(公告)日：2008-11-20

申请号：US11662842

申请日：2006-06-15

申请人： Tomoya Yano ,  Makio Iida ,  Yoshiki Shirochi

发明人： Tomoya Yano ,  Makio Iida ,  Yoshiki Shirochi

IPC分类号： H04N7/173

CPC分类号： G09G3/2025 ,  G09G3/3607 ,  G09G3/3614 ,  G09G3/3688 ,  G09G2320/0252 ,  G09G2320/0261 ,  G09G2320/0271 ,  G09G2320/0276 ,  G09G2320/028 ,  G09G2320/0673 ,  G09G2340/0435 ,  G09G2340/16

摘要： A picture display apparatus exploiting a liquid crystal display is disclosed. This picture display apparatus (10) includes an interpolator (11), an over-drive unit (12), an angle of visibility improvement unit (13), and a source driver (15) for driving a liquid crystal display panel (16). The interpolator converts the picture rate upwardly. The angle of visibility improvement unit (13) converts an input picture signal into a picture signal representing a grayscale level of the input picture signal by synthesis of liquid crystal transmittances of a plural number of temporally consecutive fields. Specifically, the angle of visibility improvement unit converts the input picture signal to a picture signal made up of a first field set to a signal value related with a high grayscale level and a second field set to a signal value related with a low grayscale level. In case time changes of the grayscale level have occurred in the input picture signal at the same spatial position, the over-drive unit (12) corrects the driving level for a signal value of one or both of the first and second fields depending on response of the liquid crystal.

摘要翻译： 公开了一种利用液晶显示器的图像显示装置。 该图像显示装置（10）包括内插器（11），过驱动单元（12），可视度改善单元（13）的角度和用于驱动液晶显示面板（16）的源极驱动器（15） 。 内插器向上转换图像速率。 可见度改善单元（13）的角度通过合成多个时间上连续的场的液晶透射率将输入图像信号转换成表示输入图像信号的灰度级的图像信号。 具体地说，视角改善单元将输入图像信号转换成由设置为与灰度级高的灰度级相关的信号值的第一场组成的图像信号和与低灰度级相关的信号值的第二场。 在相同空间位置的输入图像信号中发生灰度级变化的情况下，过驱动单元（12）根据响应来校正第一和第二场中的一个或两个的信号值的驱动电平 的液晶。

公开(公告)号：US6104076A

公开(公告)日：2000-08-15

申请号：US748896

申请日：1996-11-15

申请人： Yoshiaki Nakayama ,  Hiroshi Maeda ,  Makio Iida ,  Hiroshi Fujimoto ,  Mitsuhiro Saitou ,  Hiroshi Imai ,  Hiroyuki Ban

发明人： Yoshiaki Nakayama ,  Hiroshi Maeda ,  Makio Iida ,  Hiroshi Fujimoto ,  Mitsuhiro Saitou ,  Hiroshi Imai ,  Hiroyuki Ban

IPC分类号： H01L21/336 ,  H01L21/8249 ,  H01L27/02 ,  H01L27/06 ,  H01L27/085 ,  H01L29/739 ,  H01L29/78 ,  H01L29/76 ,  H01L23/58

CPC分类号： H01L29/7816 ,  H01L21/8249 ,  H01L27/0251 ,  H01L27/0623 ,  H01L27/085 ,  H01L29/063 ,  H01L29/1083 ,  H01L29/1095 ,  H01L29/66674 ,  H01L29/7395 ,  H01L29/7801 ,  H01L29/7824 ,  H01L29/7835

摘要： A semiconductor device including a reduced surface field strength type LDMOS transistor which can prevent the breakdown of elements at channel formation portions when a reverse voltage is applied to its drain. A P well and an N well are formed in an N-type substrate to produce a double-well structure, with a source electrode being set to be equal in electric potential to the N-type substrate. The drift region of the N well has a dopant concentration to satisfy the so-called RESURF condition, which can provide a high breakdown voltage a low ON resistance. When a reverse voltage is applied to a drain electrode, a parasitic bipolar transistor comprising the N well, the P well and the N-type substrate develops to form a current-carrying path toward a substrate, so that the element breakdown at the channel formation portions is avoidable at the application of the reverse voltage.

公开(公告)号：US06242792B1

公开(公告)日：2001-06-05

申请号：US09315132

申请日：1999-05-20

申请人： Shoji Miura ,  Satoshi Shiraki ,  Tetsuaki Kamiya ,  Makio Iida

发明人： Shoji Miura ,  Satoshi Shiraki ,  Tetsuaki Kamiya ,  Makio Iida

IPC分类号： H01L2941

CPC分类号： H01L28/20 ,  H01L22/22 ,  H01L27/1203 ,  H01L2924/0002 ,  H01L2924/00

摘要： A laser trimming is favorably performed by a strengthened laser beam energy. A level difference portion having a taper portion that is oblique with respect to the thicknesswise direction of a semiconductor substrate is formed at a surface of a semiconductor substrate. An insulating film is formed thereon and has its surface made flat, and then the thin film element is formed thereon. Thereafter, laser trimming is performed with respect to the thin film resistor. As a result, a state of interference between incident laser beam and reflected laser beam reflected from the interface between the semiconductor substrate and the insulating film is varied to thereby enable the production of a zone where laser beam energy is strengthened and a zone where laser beam energy is weakened.

摘要翻译： 通过强化的激光束能量有利地进行激光修整。 在半导体基板的表面形成有具有相对于半导体基板的厚度方向倾斜的锥形部的电平差部。 在其上形成绝缘膜并使其表面平坦化，然后在其上形成薄膜元件。 此后，相对于薄膜电阻器进行激光微调。 结果，入射激光束与从半导体衬底和绝缘膜之间的界面反射的反射激光束之间的干涉状态变化，从而能够生成激光束能量增强的区域和激光束 能量减弱。

公开(公告)号：US5625218A

公开(公告)日：1997-04-29

申请号：US491543

申请日：1995-06-16

申请人： Hideya Yamadera ,  Takeshi Ohwaki ,  Yasunori Taga ,  Makio Iida ,  Makoto Ohkawa ,  Hirofumi Abe ,  Yoshihiko Isobe

发明人： Hideya Yamadera ,  Takeshi Ohwaki ,  Yasunori Taga ,  Makio Iida ,  Makoto Ohkawa ,  Hirofumi Abe ,  Yoshihiko Isobe

IPC分类号： H01L23/525 ,  H01L27/10 ,  H01L29/00

CPC分类号： H01L23/5256 ,  H01L2924/0002

摘要： A fuse fusible type semiconductor device capable of reducing energy required for fusing and a production method of the semiconductor device. In a semiconductor device equipped with a heat-fusible thin film resistor, the thin film resistor formed on a substrate 1 through an insulating film 2 is made of chromium, silicon and tungsten, and films 7 and 8 of a insulator including silicon laminated on the upper surface of the fusing surface, aluminum films 5 are disposed on both sides of the fusing surface and a barrier film 4. This semiconductor device is produced by a lamination step of sequentially forming a first insulating film 2, a thin film resistor 3, a barrier film 4 and an aluminum film 5 on a substrate 1 for reducing drastically fusing energy, an etching step of removing the barrier film 4 and the aluminum film 5 from the fusing region 31 of the thin film resistor 3, and an oxide film formation step of depositing the insulator including silicon films 7 and 8.

摘要翻译： 一种能够降低熔融所需的能量的熔断器熔断型半导体器件和半导体器件的制造方法。 在配备有热熔薄膜电阻器的半导体装置中，通过绝缘膜2形成在基板1上的薄膜电阻由铬，硅和钨制成，并且包含硅的绝缘体的膜7和8层压在 定影表面的上表面，铝膜5设置在定影表面的两侧和阻挡膜4上。该半导体器件通过层叠步骤制造，顺序形成第一绝缘膜2，薄膜电阻3， 阻挡膜4和铝膜5，用于降低显着熔化能的蚀刻步骤，从薄膜电阻器3的熔融区域31去除阻挡膜4和铝膜5的蚀刻步骤以及氧化膜形成步骤 沉积包括硅膜7和8的绝缘体。

公开(公告)号：US5187559A

公开(公告)日：1993-02-16

申请号：US661240

申请日：1991-02-27

申请人： Yoshihiko Isobe ,  Makio Iida

发明人： Yoshihiko Isobe ,  Makio Iida

IPC分类号： H01L27/04 ,  H01L21/02 ,  H01L21/822 ,  H01L27/06

CPC分类号： H01L28/20 ,  H01L27/0688

摘要： A semiconductor device provided with a polycrystalline silicon resistor containing an impurity in a high concentration and having a resistance adjusted by a current conduction therethrough at a current density of a threshold value or more, which comprises: a polycrystalline silicon resistor containing a first impurity having a negative value of a temperature coefficient of resistance in a high impurity concentration region of said polycrystalline silicon resistor and a second impurity having a positive value of a temperature coefficient of resistance in a high impurity concentration region of the polycrystalline silicon resistor. A process for producing same is also disclosed.

摘要翻译： 一种半导体器件，其具有含有高浓度的杂质的多晶硅电阻体，所述多晶硅电阻器具有以阈值以上的电流密度通过电流导通而调整的电阻，所述电流密度包括：含有第一杂质的多晶硅电阻， 在多晶硅电阻器的高杂质浓度区域中，所述多晶硅电阻器的高杂质浓度区域的电阻温度系数的负值和具有温度系数的正值的第二杂质。 还公开了其制造方法。

公开(公告)号：US20060284565A1

公开(公告)日：2006-12-21

申请号：US11448438

申请日：2006-06-07

申请人： Makio Iida ,  Norimasa Furukawa

发明人： Makio Iida ,  Norimasa Furukawa

IPC分类号： H05B39/04

CPC分类号： H05B41/2858 ,  H01J61/547 ,  H01J61/78 ,  H05B41/2806 ,  H05B41/282 ,  Y02B20/22 ,  Y10S315/01

摘要： A cold cathode fluorescent lamp apparatus has a cold cathode fluorescent lamp which can be lit readily and in which leak current is minimized. A pair of internal electrodes are disposed on an inner surface of the cold cathode fluorescent lamp, and a pair of external electrodes are provided on an outer surface of the cold cathode fluorescent lamp. The internal electrodes are driven by a dc driving circuit, and the current flow between the internal electrodes is controlled by a constant current circuit. The external electrodes are driven by an ac driving circuit.

公开(公告)号：US6146947A

公开(公告)日：2000-11-14

申请号：US54493

申请日：1998-04-03

申请人： Naoto Okabe ,  Makio Iida ,  Norihito Tokura

发明人： Naoto Okabe ,  Makio Iida ,  Norihito Tokura

IPC分类号： H01L29/78 ,  H01L21/322 ,  H01L21/331 ,  H01L21/336 ,  H01L29/08 ,  H01L29/739

CPC分类号： H01L29/66333 ,  H01L21/3221 ,  H01L29/0834 ,  H01L29/7395 ,  Y10S257/913

摘要： In an insulated gate type field effect transistor and a manufacturing method of the same, a diffusion region is formed in a semiconductor substrate under an oxidizing atmosphere by thermal diffusion, and a first conductivity type semiconductor layer is formed on the semiconductor substrate by vapor-phase epitaxy after the formation of the diffusion region. Thereafter, the surface of the semiconductor layer is flattened, and a gate insulating film and a gate electrode are formed on the flattened semiconductor layer. Further, a well region as well as a source region are formed in the semiconductor layer to form an insulated gate type field effect transistor. As the surface of the semiconductor layer in which the insulated gate type field effect transistor is formed is flattened, even if the embedded region is formed in the wafer, the gate-source insulation withstand voltage characteristic can be prevented from being deteriorated.

摘要翻译： 在绝缘栅型场效应晶体管及其制造方法中，通过热扩散在氧化气氛下在半导体衬底中形成扩散区，并且通过气相在半导体衬底上形成第一导电类型半导体层 形成扩散区后的外延。 此后，半导体层的表面变平，在平坦的半导体层上形成栅极绝缘膜和栅电极。 此外，在半导体层中形成阱区以及源极区，形成绝缘栅型场效应晶体管。 由于形成绝缘栅型场效应晶体管的半导体层的表面平坦化，即使在晶片中形成嵌入区域，也可以防止栅源绝缘耐压特性劣化。

公开(公告)号：US5525831A

公开(公告)日：1996-06-11

申请号：US222815

申请日：1994-04-05

申请人： Makoto Ohkawa ,  Makio Iida ,  Shoji Miura ,  Osamu Ishihara ,  Tetsuaki Kamiya

发明人： Makoto Ohkawa ,  Makio Iida ,  Shoji Miura ,  Osamu Ishihara ,  Tetsuaki Kamiya

IPC分类号： H01C17/24 ,  H01L21/02 ,  H01L29/00 ,  H01L23/58 ,  H01L29/76

CPC分类号： H01L28/20 ,  H01C17/24

摘要： A thin film resistor on a semiconductor device may be laser trimmed while reducing the influence of film thickness of a passivation film formed on the thin film resistor. An underlying oxide film consisting of a BPSG film and a silicon oxide film is formed on an Si substrate. A silicon oxide film and a silicon nitride film are formed on the underlying film as a passivation film, and a silicon oxide film is formed on this assembly. The silicon oxide film contributes to controlling a variation of the laser energy absorption rate of a thin film resistor due to an uneven thickness of the silicon nitride film. Thus, it is possible to stabilize adjustment of the resistance value of the thin film resistor with a laser.

摘要翻译： 半导体器件上的薄膜电阻器可以被激光修整，同时减少在薄膜电阻器上形成的钝化膜的膜厚度的影响。 在Si衬底上形成由BPSG膜和氧化硅膜构成的底层氧化物膜。 在作为钝化膜的基底膜上形成氧化硅膜和氮化硅膜，在该组件上形成氧化硅膜。 氧化硅膜有助于控制由于氮化硅膜的不均匀厚度导致的薄膜电阻器的激光能量吸收率的变化。 因此，可以通过激光来稳定薄膜电阻器的电阻值的调整。