公开(公告)号：US08459202B2

公开(公告)日：2013-06-11

申请号：US12568175

申请日：2009-09-28

申请人： Tomoyuki Yamada ,  Mamoru Oishi ,  Kanako Kitayama

发明人： Tomoyuki Yamada ,  Mamoru Oishi ,  Kanako Kitayama

IPC分类号： C23C16/00 ,  C23C16/52 ,  H01L21/306 ,  G06F19/00 ,  G01F15/00 ,  G01F15/06

CPC分类号： C23C16/455 ,  C23C16/45561 ,  Y10T137/218 ,  Y10T137/2202 ,  Y10T137/2213 ,  Y10T137/2218 ,  Y10T137/8593 ,  Y10T137/87917

摘要： A gas flow of a gas pipe is indicated before an electromagnetic valve is actually opened, so that the electromagnetic valve can be prevented from being opened or closed by a wrong manipulation or hazards caused by undesired mixing of gases can be avoided so as to improve safety. The substrate processing apparatus includes a state detection unit configured to detect an opening/closing request state and an opening/closing state of a valve installed at a gas pipeline; and a indication unit configured to indicate a gas flow state of the gas pipeline predicted according to the opening/closing request state and a gas flow state of the gas pipeline when the valve is opened, in a way that each state is distinguished.

摘要翻译： 在电磁阀实际打开之前，指示气体管道的气体流动，从而可以防止电磁阀由于错误的操作而被打开或关闭，或者避免由于气体的不期望的混合引起的危险，从而提高安全性 。 基板处理装置包括状态检测单元，其被配置为检测安装在气体管道处的阀的打开/关闭请求状态和打开/关闭状态; 以及指示单元，其被配置为以每种状态被区分的方式指示根据打开/关闭请求状态预测的气体管道的气体流动状态和当打开阀时气体管道的气体流动状态。

公开(公告)号：US20100078128A1

公开(公告)日：2010-04-01

申请号：US12568175

申请日：2009-09-28

申请人： Tomoyuki YAMADA ,  Mamoru Oishi ,  Kanako Kitayama

发明人： Tomoyuki YAMADA ,  Mamoru Oishi ,  Kanako Kitayama

IPC分类号： H01L21/465 ,  B05C11/00

CPC分类号： C23C16/455 ,  C23C16/45561 ,  Y10T137/218 ,  Y10T137/2202 ,  Y10T137/2213 ,  Y10T137/2218 ,  Y10T137/8593 ,  Y10T137/87917

摘要： A gas flow of a gas pipe is indicated before an electromagnetic valve is actually opened, so that the electromagnetic valve can be prevented from being opened or closed by a wrong manipulation or hazards caused by undesired mixing of gases can be avoided so as to improve safety. The substrate processing apparatus includes a state detection unit configured to detect an opening/closing request state and an opening/closing state of a valve installed at a gas pipeline; and a indication unit configured to indicate a gas flow state of the gas pipeline predicted according to the opening/closing request state and a gas flow state of the gas pipeline when the valve is opened, in a way that each state is distinguished.

摘要翻译： 在电磁阀实际打开之前，指示气体管道的气体流动，从而可以防止电磁阀由于错误的操作而被打开或关闭，或者避免由于气体的不期望的混合引起的危险，从而提高安全性 。 基板处理装置包括状态检测单元，其被配置为检测安装在气体管道处的阀的打开/关闭请求状态和打开/关闭状态; 以及指示单元，其被配置为以每种状态被区分的方式指示根据打开/关闭请求状态预测的气体管道的气体流动状态和当打开阀时气体管道的气体流动状态。

公开(公告)号：US06825126B2

公开(公告)日：2004-11-30

申请号：US10422859

申请日：2003-04-25

申请人： Masayuki Asai ,  Sadayoshi Horii ,  Kanako Kitayama ,  Masayuki Tsuneda

发明人： Masayuki Asai ,  Sadayoshi Horii ,  Kanako Kitayama ,  Masayuki Tsuneda

IPC分类号： H01L21302

CPC分类号： C23C16/0218 ,  C23C16/0236 ,  C23C16/40 ,  C23C16/401 ,  C23C16/405 ,  C23C16/4405 ,  C23C16/56

摘要： It is an object of the present invention to effectively and efficiently inhibit the influence of an eliminated gas from a built-up film deposited in a reaction chamber and reduce an incubation time to improve flatness of a thin film. A manufacturing method of a semiconductor device includes a preprocess step and a film-forming step. In the preprocess step, an RPH (Remote Plasma Hydrogenation) process of supplying a hydrogen radical onto a substrate (202), thereafter, an RPN (Remote Plasma Nitridation) process of supplying a nitrogen radical onto the substrate (203), and thereafter, an RPO (Remote Plasma Oxidation) process of supplying an oxygen radical onto the substrate (204) are performed during a substrate temperature increase for raising a substrate temperature up to a film-forming temperature. In the film-forming step, after the substrate temperature is raised up to the film-forming temperature, a film-forming process is performed by a thermal CVD method by supplying a source gas onto the substrate (205), and thereafter, the RPO process is performed (206). In this film-forming step, the film-forming source supply onto the substrate and the RPO process are preferably repeated a plurality of times.

摘要翻译： 本发明的一个目的是有效地和有效地抑制沉积在反应室中的积层膜的排出气体的影响，并减少孵化时间以改善薄膜的平整度。 半导体器件的制造方法包括预处理步骤和成膜步骤。 在预处理步骤中，将氢自由基供应到基板（202）上的RPH（远程等离子体氢化）方法，此后，向基板（203）供给氮自由基的RPN（远程等离子体氮化）工艺， 在衬底温度升高期间执行将氧自由基供应到衬底（204）上的RPO（远程等离子体氧化）工艺，以将衬底温度升高到成膜温度。 在成膜步骤中，在衬底温度升高到成膜温度之后，通过将源气体供应到衬底（205）上，通过热CVD法进行成膜工艺，此后，RPO 进行处理（206）。 在该成膜步骤中，优选重复多次重复供给到基板上的成膜源和RPO工艺。

公开(公告)号：US06884738B2

公开(公告)日：2005-04-26

申请号：US10372245

申请日：2003-02-25

申请人： Masayuki Asai ,  Kanako Kitayama

发明人： Masayuki Asai ,  Kanako Kitayama

IPC分类号： H01L21/31 ,  C23C16/40 ,  C23C16/44 ,  C23C16/452 ,  C23C16/455 ,  C23C16/458 ,  C23C16/52 ,  H01L21/316

CPC分类号： H01L21/02252 ,  C23C16/405 ,  C23C16/4405 ,  C23C16/452 ,  C23C16/45527 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/4584 ,  C23C16/52 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/31604

摘要： According to the present invention, flatness of a thin film formed on a substrate is improved without generating particles and lowering productivity. A method of manufacturing a semiconductor device includes a first thin film layer forming step A and a second thin film layer forming step B. In the first thin film layer forming step A, on the way of heating and raising the temperature of the substrate up to a film-forming temperature, a film-forming source supply in which an organic source gas is made adhere onto the substrate in yet unreacted state is performed (202), and thereafter, a RPO process (Remote Plasma Oxidation) in which an oxygen radical is supplied onto the substrate to form a first thin film layer is performed (203). In this first thin film layer forming step A, it is preferable to repeat the film-forming source supply onto the substrate and the RPO process more than once. In the second thin film layer forming step B, after the source gas is supplied onto the substrate by a thermal CVD method to perform a film-forming process (205) after raising the temperature of the substrate to the film-forming temperature, the RPO process is performed to form a second thin film layer on the first thin film layer with a predetermined film thickness (206).

摘要翻译： 根据本发明，改善了形成在基板上的薄膜的平坦度，而不会产生颗粒并降低生产率。 制造半导体器件的方法包括第一薄膜层形成步骤A和第二薄膜层形成步骤B.在第一薄膜层形成步骤A中，在加热和升高基底的温度的同时，至 进行成膜温度，使有机源气体在未反应状态下附着在基板上的成膜源供给（202），然后进行其中氧自由基的RPO工艺（远程等离子体氧化） 被提供到基板上以形成第一薄膜层（203）。 在该第一薄膜层形成工序A中，优选在基板上和RPO工序上重复成膜源不止一次。 在第二薄膜层形成步骤B中，在通过热CVD法将源气体供应到基板上之后，在将基板的温度升高成膜温度之后进行成膜工艺（205），RPO 进行处理以在第一薄膜层上形成具有预定膜厚度的第二薄膜层（206）。

公开(公告)号：US20070087579A1

公开(公告)日：2007-04-19

申请号：US10574893

申请日：2005-03-08

申请人： Kanako Kitayama ,  Sadayoshi Horii

发明人： Kanako Kitayama ,  Sadayoshi Horii

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01J37/32477 ,  C23C16/4405 ,  H01J37/32522 ,  H01L21/02148 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/02181 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/31691

摘要： A semiconductor device manufacturing method by which a process chamber can be self-cleaned, while keeping a temperature in the process chamber low or a semiconductor device manufacturing method by which a high-k film adhering in the process chamber can be effectively removed. The method is provided with a pre-coat process, a film forming process and a cleaning process. Activated F* or Cl* by remote plasma passes through a high-k film (31), reacts to a pre-coat film (30) composed of SiO2 or Si. Since the pre-coat film (30) peels in pieces, the high-k film over the pre-coat film can be removed together.

摘要翻译： 可以在将处理室内的温度保持在较低水平的状态下对处理室进行自清洁的半导体器件制造方法或能够有效地除去附着在处理室中的高k膜的半导体器件的制造方法。 该方法具有预涂工艺，成膜工艺和清洁工艺。 远程等离子体激活的F *或Cl *通过高k膜（31），与由SiO 2或Si组成的预涂膜（30）反应。 由于预涂膜（30）剥离，因此可以一起除去预涂膜上的高k膜。