公开(公告)号：US06971362B2

公开(公告)日：2005-12-06

申请号：US10791672

申请日：2004-03-02

申请人： Toru Gunji ,  Hiroyuki Kawakubo ,  Hisao Otsuka

发明人： Toru Gunji ,  Hiroyuki Kawakubo ,  Hisao Otsuka

IPC分类号： F02B61/02 ,  F02F7/00 ,  F16B35/00 ,  F16B35/04 ,  F16C9/02 ,  F16F15/24

CPC分类号： F02F7/0053 ,  F02B61/02 ,  F16B35/044 ,  F16C9/02

摘要： A threaded fastener is configured to reduce stress experienced at a female threaded portion of a hole formed in an engine block, when the threaded fastener is inserted therein, and when an axial load is applied thereto. In a particular application, a crankshaft is supported between a top supporting wall of a crankcase and a bottom supporting wall of a main cap. The inventive bolt includes a hollowed-out male threaded portion, which fits into a hole in the top supporting wall. The male threaded portion includes an elastically deformable low-rigidity portion, in which a cylindrical hole is concentrically formed. The maximum allowable stress of the top supporting wall is less than that of the bolt, due to material considerations. The low-rigidity portion is placed overlapping the female threaded portion in the axial direction, and since it is elastically deformable, it helps alleviate the stress experienced by the female threaded portion.

摘要翻译： 螺纹紧固件构造成当螺纹紧固件插入其中时以及当向其施加轴向载荷时，减小在形成在发动机缸体中的孔的内螺纹部分处经受的应力。 在具体应用中，曲轴支撑在曲轴箱的顶部支撑壁和主盖的底部支撑壁之间。 本发明的螺栓包括中空的外螺纹部分，该螺纹部分装配在顶部支撑壁中的孔中。 外螺纹部分包括可弹性变形的低刚性部分，其中圆柱形孔同心地形成。 由于材料考虑，顶部支撑壁的最大允许应力小于螺栓的最大允许应力。 低刚性部分沿着轴向方向与母螺纹部分重叠，并且由于其是可弹性变形的，所以有助于减轻内螺纹部分所经受的应力。

公开(公告)号：US4218479A

公开(公告)日：1980-08-19

申请号：US906965

申请日：1978-05-18

申请人： Muneyoshi Ikezaki ,  Hisao Otsuka ,  Hajime Iwai ,  Masanori Inamasu ,  Takashi Morita

发明人： Muneyoshi Ikezaki ,  Hisao Otsuka ,  Hajime Iwai ,  Masanori Inamasu ,  Takashi Morita

IPC分类号： A61K31/135 ,  A61P3/08 ,  A61P7/02 ,  C07C67/00 ,  C07C213/00 ,  C07C217/60 ,  C07C91/16 ,  C07C91/22 ,  C07C91/34

CPC分类号： A61K31/135

摘要： Racemic or optically active .alpha.-(2,3,4-trimethoxyphenethylaminomethyl)-2-hydroxybenzylalcohol [I] may be prepared by condensing 2,3,4-trimethoxyphenethylamine with 2-benzyloxyphenylglyoxal or its hydrate, reducing the resultant .alpha.(2,3,4-tri-methoxyphenethylimino)-2-benzyloxyacetophenone to give .alpha.(2,3,4-trimethoxyphenethylaminomethyl)-2-benzyloxybenzylalcohol, if required, resolving the 2-benzyloxybenzylalcohol derivative into each of its optically active enantiomers, and subjecting the racemic modification or optically active enantiomer of said 2-benzyloxybenzylalcohol derivative to catalytic hydrogenation. The compound [I] and pharmaceutically acceptable acid addition salts thereof are useful as anti-diabetic agents. They may be also used in the treatment of thrombosis.

摘要翻译： 外消旋或光学活性的α-（2,3,4-三甲氧基苯乙氨基甲基）-2-羟基苄醇[I]可以通过将2,3,4-三甲氧基苯乙胺与2-苄氧基苯基乙二醛或其水合物缩合来制备，将所得的α（2,3 ，4-三甲氧基苯乙基亚氨基）-2-苄氧基苯乙酮，得到α（2,3,4-三甲氧基苯乙基氨基甲基）-2-苄氧基苄醇，如果需要，将2-苄氧基苄基衍生物拆分成各自的旋光对映异构体， 或所述2-苄氧基苄基醇衍生物的光学活性对映异构体进行催化氢化。 化合物[I]及其药学上可接受的酸加成盐可用作抗糖尿病药。 它们也可用于治疗血栓形成。

公开(公告)号：US07575994B2

公开(公告)日：2009-08-18

申请号：US11451633

申请日：2006-06-13

申请人： Yuichi Morita ,  Shinzo Ishibe ,  Takashi Noma ,  Hisao Otsuka ,  Yukihiro Takao ,  Hiroshi Kanamori

发明人： Yuichi Morita ,  Shinzo Ishibe ,  Takashi Noma ,  Hisao Otsuka ,  Yukihiro Takao ,  Hiroshi Kanamori

IPC分类号： H01L21/44

CPC分类号： H01L23/3192 ,  H01L23/3114 ,  H01L23/3171 ,  H01L24/11 ,  H01L24/12 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05567 ,  H01L2224/05644 ,  H01L2224/1132 ,  H01L2224/1147 ,  H01L2224/13099 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12044 ,  H01L2924/13091 ,  H01L2924/00 ,  H01L2924/00014

摘要： The invention provides a CSP type semiconductor device with high reliability. The semiconductor device includes a pad electrode formed on a semiconductor substrate, a first passivation film covering an end portion of the pad electrode and having a first opening on the pad electrode, a plating layer formed on the pad electrode in the first opening, a second passivation film covering an exposed portion of the pad electrode between an end portion of the first passivation film and the plating layer, covering an end portion of the plating layer, and having a second opening on the plating layer, and a conductive terminal formed on the plating layer in the second opening.

摘要翻译： 本发明提供了一种具有高可靠性的CSP型半导体器件。 半导体器件包括形成在半导体衬底上的焊盘电极，覆盖焊盘电极的端部并且在焊盘电极上具有第一开口的第一钝化膜，形成在第一开口中的焊盘电极上的镀层，第二钝化膜 钝化膜，覆盖第一钝化膜的端部与镀覆层之间的焊盘电极的露出部分，覆盖镀层的端部，并且在镀层上具有第二开口;以及导电端子， 第二开口中的镀层。

公开(公告)号：US20060289991A1

公开(公告)日：2006-12-28

申请号：US11451619

申请日：2006-06-13

申请人： Yuichi Morita ,  Shinzo Ishibe ,  Takashi Noma ,  Hisao Otsuka ,  Yukihiro Takao ,  Hiroshi Kanamori

发明人： Yuichi Morita ,  Shinzo Ishibe ,  Takashi Noma ,  Hisao Otsuka ,  Yukihiro Takao ,  Hiroshi Kanamori

IPC分类号： H01L23/48

CPC分类号： H01L24/13 ,  H01L23/3192 ,  H01L24/11 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05568 ,  H01L2224/05644 ,  H01L2224/1191 ,  H01L2224/13022 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/13144 ,  H01L2924/0001 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/13091 ,  H01L2924/00014 ,  H01L2924/00

摘要： The invention provides a CSP type semiconductor device with high reliability. The semiconductor device includes a pad electrode formed on a semiconductor substrate with insulation films interposed therebetween, a plating layer formed on the pad electrode, a conductive terminal formed on the plating layer and electrically connected with the pad electrode, and a first passivation film covering the insulation films and a side end portion of the pad electrode, in which an exposed portion of the pad electrode that causes corrosion is covered by forming a second passivation film so as to cover the first passivation film, the plating layer, and a portion of a sidewall of the conductive terminal.

摘要翻译： 本发明提供了一种具有高可靠性的CSP型半导体器件。 半导体器件包括：在半导体衬底上形成有绝缘膜的焊盘电极，形成在焊盘电极上的镀层，形成在镀层上并与焊盘电极电连接的导电端子;以及第一钝化膜， 绝缘膜和焊盘电极的侧端部分，其中通过形成第二钝化膜来覆盖引起腐蚀的焊盘电极的暴露部分，以覆盖第一钝化膜，镀层和一部分 导电端子的侧壁。

公开(公告)号：US20100163361A1

公开(公告)日：2010-07-01

申请号：US12640614

申请日：2009-12-17

申请人： Masayoshi Suzuta ,  Hideo Senmyo ,  Yoshiki Nagahashi ,  Masaki Yoneyama ,  Shinya Wakabayashi ,  Kazumitsu Yamamoto ,  Hisao Otsuka ,  Masashi Furuya ,  Hiroshi Ori ,  Hideaki Segami ,  Katsu Yoshimoto

发明人： Masayoshi Suzuta ,  Hideo Senmyo ,  Yoshiki Nagahashi ,  Masaki Yoneyama ,  Shinya Wakabayashi ,  Kazumitsu Yamamoto ,  Hisao Otsuka ,  Masashi Furuya ,  Hiroshi Ori ,  Hideaki Segami ,  Katsu Yoshimoto

IPC分类号： F16D13/04

CPC分类号： F16D13/52 ,  F16D13/56 ,  F16D2013/565

摘要： In a multiple disc clutch apparatus 10, a cam member 41 which is disposed on a side of a clutch inner member 16 is formed into an annular shape. The cam member 41 extends in a radial direction so that an outer circumferential surface of the cam member 41 is brought into abutment with a cylindrical face 19d on an inner circumferential surface of a clutch center member 19.

摘要翻译： 在多片离合器装置10中，设置在离合器内构件16侧的凸轮构件41形成为环状。 凸轮构件41沿径向延伸，使得凸轮构件41的外周面与离合器中心构件19的内周面上的圆筒面19d抵接。

公开(公告)号：US08151964B2

公开(公告)日：2012-04-10

申请号：US12640614

申请日：2009-12-17

申请人： Masayoshi Suzuta ,  Hideo Senmyo ,  Yoshiki Nagahashi ,  Masaki Yoneyama ,  Shinya Wakabayashi ,  Kazumitsu Yamamoto ,  Hisao Otsuka ,  Masashi Furuya ,  Hiroshi Ori ,  Hideaki Segami ,  Katsu Yoshimoto

发明人： Masayoshi Suzuta ,  Hideo Senmyo ,  Yoshiki Nagahashi ,  Masaki Yoneyama ,  Shinya Wakabayashi ,  Kazumitsu Yamamoto ,  Hisao Otsuka ,  Masashi Furuya ,  Hiroshi Ori ,  Hideaki Segami ,  Katsu Yoshimoto

IPC分类号： F16D13/52 ,  F16D43/21

CPC分类号： F16D13/52 ,  F16D13/56 ,  F16D2013/565

摘要： In a multiple disc clutch apparatus 10, a cam member 41 which is disposed on a side of a clutch inner member 16 is formed into an annular shape. The cam member 41 extends in a radial direction so that an outer circumferential surface of the cam member 41 is brought into abutment with a cylindrical face 19d on an inner circumferential surface of a clutch center member 19.

摘要翻译： 在多片离合器装置10中，设置在离合器内构件16侧的凸轮构件41形成为环状。 凸轮构件41沿径向延伸，使得凸轮构件41的外周面与离合器中心构件19的内周面上的圆筒面19d抵接。

公开(公告)号：US07919875B2

公开(公告)日：2011-04-05

申请号：US11956160

申请日：2007-12-13

申请人： Takashi Noma ,  Katsuhiko Kitagawa ,  Hisao Otsuka ,  Akira Suzuki ,  Yoshinori Seki ,  Yukihiro Takao ,  Keiichi Yamaguchi ,  Motoaki Wakui ,  Masanori Iida

发明人： Takashi Noma ,  Katsuhiko Kitagawa ,  Hisao Otsuka ,  Akira Suzuki ,  Yoshinori Seki ,  Yukihiro Takao ,  Keiichi Yamaguchi ,  Motoaki Wakui ,  Masanori Iida

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L24/13 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/78 ,  H01L23/3114 ,  H01L24/11 ,  H01L24/12 ,  H01L2221/68327 ,  H01L2221/68372 ,  H01L2224/02313 ,  H01L2224/0401 ,  H01L2224/0558 ,  H01L2224/05644 ,  H01L2224/131 ,  H01L2224/13144 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2224/13099

摘要： A manufacturing method of a semiconductor device formed in a chip size package is improved to enhance a yield and reliability. A window to expose first wirings is formed only in a region of a semiconductor substrate where the first wirings exist. As a result, area of the semiconductor substrate bonded to a supporting body through an insulation film and a resin is increased to prevent cracks in the supporting body and separation of the semiconductor substrate from the supporting body. A slit is formed along a dicing line after forming the window, the slit is covered with a protection film and then the semiconductor substrate is diced into individual semiconductor dice. Thus, separation on a cut surface or at an edge of the semiconductor dice, which otherwise would be caused by contact of the blade in the dicing can be prevented.

摘要翻译： 改进了以芯片尺寸封装形成的半导体器件的制造方法，以提高产量和可靠性。 仅在存在第一布线的半导体基板的区域中形成露出第一布线的窗口。 结果，增加了通过绝缘膜和树脂粘合到支撑体的半导体衬底的面积，以防止支撑体中的裂纹和半导体衬底与支撑体的分离。 在形成窗口之后沿着切割线形成狭缝，用保护膜覆盖狭缝，然后将半导体基板切割成单独的半导体管芯。 因此，可以防止在切割时由刀片接触而导致的半导体管芯的切割面或边缘处的分离。

公开(公告)号：US07508072B2

公开(公告)日：2009-03-24

申请号：US11529553

申请日：2006-09-29

申请人： Yuichi Morita ,  Shinzo Ishibe ,  Takashi Noma ,  Hisao Otsuka ,  Yukihiro Takao ,  Hiroshi Kanamori

发明人： Yuichi Morita ,  Shinzo Ishibe ,  Takashi Noma ,  Hisao Otsuka ,  Yukihiro Takao ,  Hiroshi Kanamori

IPC分类号： H01L23/48 ,  H01L21/44

CPC分类号： H01L21/6835 ,  H01L21/76898 ,  H01L23/3114 ,  H01L23/562 ,  H01L23/564 ,  H01L2221/6834 ,  H01L2224/0392 ,  H01L2224/0401 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05024 ,  H01L2224/05124 ,  H01L2224/05548 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/16237 ,  H01L2924/01019 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/04941 ,  H01L2924/00014

摘要： The invention prevents a pad electrode for external connection of a semiconductor device from being damaged. An electronic circuit, a first pad electrode connected to the electronic circuit, and a second pad electrode connected to the first pad electrode are formed on a semiconductor substrate. A first protection film is formed, covering the first pad electrode and having an opening on the second pad electrode only. A wiring layer is further formed, being connected to the back surface of the first pad electrode through a via hole penetrating the semiconductor substrate and extending from the via hole onto the back surface of the semiconductor substrate.

摘要翻译： 本发明防止半导体器件的外部连接的焊盘电极被损坏。 连接到电子电路的电子电路，第一焊盘电极和连接到第一焊盘电极的第二焊盘电极形成在半导体衬底上。 形成第一保护膜，覆盖第一焊盘电极并且仅在第二焊盘电极上具有开口。 进一步形成布线层，其通过穿透半导体衬底的通孔连接到第一焊盘电极的背面并从通孔延伸到半导体衬底的背面。

公开(公告)号：US20080093708A1

公开(公告)日：2008-04-24

申请号：US11956160

申请日：2007-12-13

申请人： Takashi Noma ,  Katsuhiko Kitagawa ,  Hisao Otsuka ,  Akira Suzuki ,  Yoshinori Seki ,  Yukihiro Takao ,  Keiichi Yamaguchi ,  Motoaki Wakui ,  Masanori Iida

发明人： Takashi Noma ,  Katsuhiko Kitagawa ,  Hisao Otsuka ,  Akira Suzuki ,  Yoshinori Seki ,  Yukihiro Takao ,  Keiichi Yamaguchi ,  Motoaki Wakui ,  Masanori Iida

IPC分类号： H01L23/48

CPC分类号： H01L24/13 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/78 ,  H01L23/3114 ,  H01L24/11 ,  H01L24/12 ,  H01L2221/68327 ,  H01L2221/68372 ,  H01L2224/02313 ,  H01L2224/0401 ,  H01L2224/0558 ,  H01L2224/05644 ,  H01L2224/131 ,  H01L2224/13144 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2224/13099

摘要： A manufacturing method of a semiconductor device formed in a chip size package is improved to enhance a yield and reliability. A window to expose first wirings is formed only in a region of a semiconductor substrate where the first wirings exist. As a result, area of the semiconductor substrate bonded to a supporting body through an insulation film and a resin is increased to prevent cracks in the supporting body and separation of the semiconductor substrate from the supporting body. A slit is formed along a dicing line after forming the window, the slit is covered with a protection film and then the semiconductor substrate is diced into individual semiconductor dice. Thus, separation on a cut surface or at an edge of the semiconductor dice, which otherwise would be caused by contact of the blade in the dicing can be prevented.

摘要翻译： 改进了以芯片尺寸封装形成的半导体器件的制造方法，以提高产量和可靠性。 仅在存在第一布线的半导体基板的区域中形成露出第一布线的窗口。 结果，增加了通过绝缘膜和树脂粘合到支撑体的半导体衬底的面积，以防止支撑体中的裂纹和半导体衬底与支撑体的分离。 在形成窗口之后沿着切割线形成狭缝，用保护膜覆盖狭缝，然后将半导体基板切割成单独的半导体管芯。 因此，可以防止在切割时由刀片接触而导致的半导体管芯的切割面或边缘处的分离。

公开(公告)号：US07312107B2

公开(公告)日：2007-12-25

申请号：US10910805

申请日：2004-08-04

申请人： Takashi Noma ,  Katsuhiko Kitagawa ,  Hisao Otsuka ,  Akira Suzuki ,  Yoshinori Seki ,  Yukihiro Takao ,  Keiichi Yamaguchi ,  Motoaki Wakui ,  Masanori Iida

发明人： Takashi Noma ,  Katsuhiko Kitagawa ,  Hisao Otsuka ,  Akira Suzuki ,  Yoshinori Seki ,  Yukihiro Takao ,  Keiichi Yamaguchi ,  Motoaki Wakui ,  Masanori Iida

IPC分类号： H01L21/44

CPC分类号： H01L24/13 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/78 ,  H01L23/3114 ,  H01L24/11 ,  H01L24/12 ,  H01L2221/68327 ,  H01L2221/68372 ,  H01L2224/02313 ,  H01L2224/0401 ,  H01L2224/0558 ,  H01L2224/05644 ,  H01L2224/131 ,  H01L2224/13144 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2224/13099

摘要： A manufacturing method of a semiconductor device formed in a chip size package is improved to enhance a yield and reliability. A window to expose first wirings is formed only in a region of a semiconductor substrate where the first wirings exist. As a result, area of the semiconductor substrate bonded to a supporting body through an insulation film and a resin is increased to prevent cracks in the supporting body and separation of the semiconductor substrate from the supporting body. A slit is formed along a dicing line after forming the window, the slit is covered with a protection film and then the semiconductor substrate is diced into individual semiconductor dice. Thus, separation on a cut surface or at an edge of the semiconductor dice, which otherwise would be caused by contact of the blade in the dicing can be prevented.

摘要翻译： 改进了以芯片尺寸封装形成的半导体器件的制造方法，以提高产量和可靠性。 仅在存在第一布线的半导体基板的区域中形成露出第一布线的窗口。 结果，增加了通过绝缘膜和树脂粘合到支撑体的半导体衬底的面积，以防止支撑体中的裂纹和半导体衬底与支撑体的分离。 在形成窗口之后沿着切割线形成狭缝，用保护膜覆盖狭缝，然后将半导体基板切割成单独的半导体管芯。 因此，可以防止在切割时由刀片接触而导致的半导体管芯的切割面或边缘处的分离。