摘要:
In a semiconductor device and production method thereof, a technique is used to prevent film separation of the bottom electrode occurring during a heat treatment process which is carried out to make the bottom electrode closely packed and in the heat treatment process for producing dielectric crystallization. In the production method, a glue layer including an insulator is formed between SiO2 insulation layer and the inner wall of a concave hole. The SiO2 layer 14 is located on the Si board 11, and Si plug 12 and a barrier layer 13 are formed therein. A glue layer 16 is formed on the inner wall of the hole of the SiO2 insulation layer 15, and a bottom electrode 17 comprising Ru is formed on the barrier layer 13 and glue layer 16. Dielectric film 18 comprising BST and a top electrode 19 comprising Ru are laminated sequentially on the bottom electrode 17, to form a dielectric device with the bottom electrode 17.
摘要:
The object of the present invention is to enable the optical axis of an electron beam of a field emission electron gun mounting thereon an electron gun composed of a fibrous carbon material to be adjusted easily. Moreover, it is also to obtain an electron beam whose energy spread is narrower than that of the electron gun. Further, it is also to provide a high resolution electron beam applied device mounting thereon the field emission electron gun. The means for achieving the objects of the present invention is in that the fibrous carbon material is coated with a material having a band gap, in the field emission electron gun including an electron source composed of a fibrous carbon material and an electrically conductive base material for supporting the fibrous carbon material, an extractor for field-emitting electrons, and an accelerator for accelerating the electrons. Moreover, it is also to apply the field emission electron gun to various kinds of electron beam applied devices.
摘要:
An electron emitting element having a cap portion 103 with a closed structure and a columnar axis portion 101a comprising a tubular material composed mostly of carbon and a conductive base material for immobilizing the tubular material, characterized in that; the cap portion 103 includes a plurality of five-membered ring structures 104 made by atoms which constitute the tubular material and the distance between the five-membered ring structures 104 is 30 nm or more.
摘要:
To prevent occurrence of abnormal discharge which would reduce the quality of images in a PDP. At least one of an address electrode, a bus electrode, a bus main electrode, and a black electrode of a display electrode formed on a substrate is formed of metal particles and high-resistance glass to dissipate charge accumulated on a dielectric through the high-resistance glass and to prevent charging in a glass component itself, thereby reducing abnormal discharge. The high-resistance glass is preferably realized by vanadium phosphate glass containing vanadium, phosphorus, antimony, and barium. The metal particles desirably contain flaky particles.
摘要:
The purpose of the present invention is to provide an easy-to-manufacture electromagnetic wave absorption material usable from submillimeter wave region to millimeter wave region with an excellent radio wave absorbing performance and a variety of usage thereof.The present invention is characterized by an electromagnetic wave absorption material comprised of a dispersions of at least one of the materials: a multi-layer hollow globule of carbon, a schungite carbon, and the schungite ore; mixed into a matter having a high electrical resistivity. The invention is further characterized by an electronic device, an optical transmission module, an optical reception module, a high frequency telecommunication equipment, and a stop-free automated tollgate system, wherein at least a part of their board, electronic element, and circuit wiring are covered with said electromagnetic wave absorption material.
摘要:
A glass bonding material contains vanadium and phosphor as main glass components, and comprises in amounts converted as oxides of the elements in the components, 45 to 60% by weight of V2O5, 15 to 30% by weight of P2O5, 5 to 25% by weight of BaO, or contains a glass comprising at least vanadium, phosphor, barium and antimony, wherein the glass comprises in amounts converted as oxides, 15 to 35% by weight of BaO and Sb2O3 in total, and a weight ratio of BaO/Sb2O3 or Sb2O3/BaO is 0.3 or less.
摘要翻译:玻璃结合材料含有钒和磷光体作为主要玻璃组分,其含量以组分中元素的氧化物转化,45至60重量%的V 2 O 5,15至30重量%的P 2 O 5,5至25重量% 或含有至少包含钒,磷,钡和锑的玻璃,其中所述玻璃包含转化为氧化物的量,总计为15〜35重量%的BaO和Sb 2 O 3,BaO / Sb 2 O 3的重量比 或Sb2O3 / BaO为0.3以下。
摘要:
The object of the present invention is to enable the optical axis of an electron beam of a field emission electron gun mounting thereon an electron gun composed of a fibrous carbon material to be adjusted easily. Moreover, it is also to obtain an electron beam whose energy spread is narrower than that of the electron gun. Further, it is also to provide a high resolution electron beam applied device mounting thereon the field emission electron gun. The means for achieving the objects of the present invention is in that the fibrous carbon material is coated with a material having a band gap, in the field emission electron gun including an electron source composed of a fibrous carbon material and an electrically conductive base material for supporting the fibrous carbon material, an extractor for field-emitting electrons, and an accelerator for accelerating the electrons. Moreover, it is also to apply the field emission electron gun to various kinds of electron beam applied devices.
摘要:
A sealing glass of a low melting point glass composition which is a phosphate glass that contains transition metal wherein the glass contains 15 to 35% of BaO and Sb2O3 (in total) and the ratio by weight of BaO to Sb2O3 or Sb2O3 to BaO is 0.3 or less. Particularly the transition metal is vanadium and the glass contains V2O5 of 45 to 60 wt % as vanadium oxide and P2O5 of 15 to 30 wt % as phosphorus oxide. The bonding material is a mixture of a filler and a vanadate-phosphate glass that contains V2O5 as the main ingredient and the glass contains V2O5 of 45 to 60%, P2O5 of 20 to 30%, BaO of 5 to 15%, TeO2 of 0 to 10%, Sb2O3 of 5 to 10%, and WO3 of 0 to 5%. The particle size of the filler is in the range of 1 to 150 μm and the ratio of filler is 80% by volume or less of the adhesive glass.
摘要翻译:作为含有过渡金属的磷酸盐玻璃的低熔点玻璃组合物的密封玻璃,其中玻璃含有15〜35%的BaO和Sb 2 O 3(在 总计)和BaO与Sb 2 O 3 3或Sb 2 O 3 3重量比与BaO的重量比为 0.3以下。 特别地,过渡金属是钒,并且玻璃含有作为氧化钒的45〜60重量%的V 2 O 5 O 3和P 2 O 2 > 5重量%为15〜30重量%。 接合材料是含有V 2 O 5 O 5作为主要成分的填料和含钒酸盐 - 磷酸盐玻璃的混合物,玻璃含有V 2, 45〜60%,5〜30%的O 2〜30%,5〜15%的BaO,5〜15% 0〜10%的2〜2%,Sb 2 O 3 3 3以上5〜10%,WO 3〜O 3为0〜 5%。 填料的粒径在1〜150μm的范围内,填料的比例为粘合玻璃的80体积%以下。
摘要:
A conductive material comprising a V2O5—P2O5 glass and a second phase dispersed in the V2O5—P2O5 glass, wherein the second phase contains a crystalline V and O compound and a crystalline metal phosphate compound. The crystalline V and O compound is at least one of V2O5, V4O9, V2O4, and V2O3. The metal phosphate compound is a phosphate compound of transition metal or alkaline-earth metal. In a visual display device, glass spacers are bonded to glass panels with the conductive material.
摘要翻译:一种导电材料,其包含V 2 O 5 O 5 -P 2 O 5 O 5玻璃,第二相分散在 其中第二相包含结晶V和O化合物,其中第二相包含结晶的V和O化合物 和结晶金属磷酸盐化合物。 结晶V和O化合物是V 2 O 5,V 4 O 9,V 3,V 4, O 2 O 3,和V 2 O 3 3。 金属磷酸盐化合物是过渡金属或碱土金属的磷酸盐化合物。 在视觉显示装置中,玻璃间隔物与导电材料结合到玻璃面板上。
摘要:
It is an object of the present invention to provide a spacer which has an adequate Young's modulus for a spacer used in an image display panel and allows free adjustment of an electric resistance value, and an image display panel using the spacer. The spacer SPC holds a gap between a back panel PNL1 including a signal line CL, a scanning line GL, and an electronic source ELS provided for the main surface of a back substrate SUB1, and a front panel PNL2 including a fluorescent material PH, a black matrix BM, and an anode AD provided for the main surface of a front substrate SUB2. The spacer comprises phosphate glass including the same transition metal element with different valences. For electrical conduction, the included same transition metal element with different valences allows the use of hopping conduction between transition metal atoms with different valences to perform adjustment of electric resistance relatively easily. The transition metal element is at least one of vanadium (V), tungsten (W), molybdenum (Mo), niobium (Nb), and iron (Fe).