Semiconductor device and production method thereof
    1.
    发明授权
    Semiconductor device and production method thereof 失效
    半导体装置及其制造方法

    公开(公告)号:US06483167B1

    公开(公告)日:2002-11-19

    申请号:US09644716

    申请日:2000-08-23

    IPC分类号: H01L2900

    CPC分类号: H01L28/60 H01L28/55 H01L28/91

    摘要: In a semiconductor device and production method thereof, a technique is used to prevent film separation of the bottom electrode occurring during a heat treatment process which is carried out to make the bottom electrode closely packed and in the heat treatment process for producing dielectric crystallization. In the production method, a glue layer including an insulator is formed between SiO2 insulation layer and the inner wall of a concave hole. The SiO2 layer 14 is located on the Si board 11, and Si plug 12 and a barrier layer 13 are formed therein. A glue layer 16 is formed on the inner wall of the hole of the SiO2 insulation layer 15, and a bottom electrode 17 comprising Ru is formed on the barrier layer 13 and glue layer 16. Dielectric film 18 comprising BST and a top electrode 19 comprising Ru are laminated sequentially on the bottom electrode 17, to form a dielectric device with the bottom electrode 17.

    摘要翻译: 在半导体装置及其制造方法中,使用这样的技术来防止在进行底部电极紧密堆积的热处理过程中发生的底部电极的膜分离和用于产生电介质结晶的热处理工艺。 在制造方法中,在SiO2绝缘层和凹孔的内壁之间形成包含绝缘体的胶层。 SiO 2层14位于Si基板11上,形成Si塞12和阻挡层13。 在SiO 2绝缘层15的孔的内壁上形成胶层16,在阻挡层13和胶层16上形成包含Ru的底部电极17.包含BST的电介质膜18和顶部电极19包括 Ru依次层叠在底部电极17上,形成具有底部电极17的电介质器件。

    Field emission electron gun and electron beam applied device using the same
    2.
    发明授权
    Field emission electron gun and electron beam applied device using the same 有权
    场发射电子枪和电子束施加装置使用相同

    公开(公告)号:US07732764B2

    公开(公告)日:2010-06-08

    申请号:US11831989

    申请日:2007-08-01

    摘要: The object of the present invention is to enable the optical axis of an electron beam of a field emission electron gun mounting thereon an electron gun composed of a fibrous carbon material to be adjusted easily. Moreover, it is also to obtain an electron beam whose energy spread is narrower than that of the electron gun. Further, it is also to provide a high resolution electron beam applied device mounting thereon the field emission electron gun. The means for achieving the objects of the present invention is in that the fibrous carbon material is coated with a material having a band gap, in the field emission electron gun including an electron source composed of a fibrous carbon material and an electrically conductive base material for supporting the fibrous carbon material, an extractor for field-emitting electrons, and an accelerator for accelerating the electrons. Moreover, it is also to apply the field emission electron gun to various kinds of electron beam applied devices.

    摘要翻译: 本发明的目的是使得能够容易地调整由其上安装有由纤维状碳材料构成的电子枪的场发射电子枪的电子束的光轴。 此外,还要获得能量扩散比电子枪窄的电子束。 此外,还提供安装在其上的高分辨率电子束施加装置的场致发射电子枪。 用于实现本发明的目的的手段在于,在场发射电子枪中包括具有带隙的材料的纤维状碳材料包括由纤维状碳材料构成的电子源和用于 支撑纤维状碳材料,用于场发射电子的提取器和用于加速电子的加速器。 此外,还将场致发射电子枪应用于各种电子束施加装置。

    PLASMA DISPLAY PANEL
    4.
    发明申请
    PLASMA DISPLAY PANEL 审中-公开
    等离子显示面板

    公开(公告)号:US20080238315A1

    公开(公告)日:2008-10-02

    申请号:US12016242

    申请日:2008-01-18

    IPC分类号: H01J17/49

    摘要: To prevent occurrence of abnormal discharge which would reduce the quality of images in a PDP. At least one of an address electrode, a bus electrode, a bus main electrode, and a black electrode of a display electrode formed on a substrate is formed of metal particles and high-resistance glass to dissipate charge accumulated on a dielectric through the high-resistance glass and to prevent charging in a glass component itself, thereby reducing abnormal discharge. The high-resistance glass is preferably realized by vanadium phosphate glass containing vanadium, phosphorus, antimony, and barium. The metal particles desirably contain flaky particles.

    摘要翻译: 防止发生异常放电,这会降低PDP中的图像质量。 形成在基板上的显示电极的寻址电极,总线电极,总线主电极和黑电极中的至少一个由金属颗粒和高电阻玻璃形成,以通过高电阻玻璃消散积聚在电介质上的电荷, 并且防止玻璃成分本身带电,从而减少异常放电。 高电阻玻璃优选由含有钒,磷,锑和钡的磷酸钒玻璃实现。 金属颗粒期望含有片状颗粒。

    FIELD EMISSION ELECTRON GUN AND ELECTRON BEAM APPLIED DEVICE USING THE SAME
    7.
    发明申请
    FIELD EMISSION ELECTRON GUN AND ELECTRON BEAM APPLIED DEVICE USING THE SAME 有权
    现场发射电子枪和使用该电子枪的电子束应用装置

    公开(公告)号:US20080029700A1

    公开(公告)日:2008-02-07

    申请号:US11831989

    申请日:2007-08-01

    摘要: The object of the present invention is to enable the optical axis of an electron beam of a field emission electron gun mounting thereon an electron gun composed of a fibrous carbon material to be adjusted easily. Moreover, it is also to obtain an electron beam whose energy spread is narrower than that of the electron gun. Further, it is also to provide a high resolution electron beam applied device mounting thereon the field emission electron gun. The means for achieving the objects of the present invention is in that the fibrous carbon material is coated with a material having a band gap, in the field emission electron gun including an electron source composed of a fibrous carbon material and an electrically conductive base material for supporting the fibrous carbon material, an extractor for field-emitting electrons, and an accelerator for accelerating the electrons. Moreover, it is also to apply the field emission electron gun to various kinds of electron beam applied devices.

    摘要翻译: 本发明的目的是使得能够容易地调整由其上安装有由纤维状碳材料构成的电子枪的场发射电子枪的电子束的光轴。 此外,还要获得能量扩散比电子枪窄的电子束。 此外,还提供安装在其上的高分辨率电子束施加装置的场致发射电子枪。 用于实现本发明的目的的手段在于,在场发射电子枪中包括具有带隙的材料的纤维状碳材料包括由纤维状碳材料构成的电子源和用于 支撑纤维状碳材料,用于场发射电子的提取器和用于加速电子的加速器。 此外,还将场致发射电子枪应用于各种电子束施加装置。

    Display Apparatus
    8.
    发明申请
    Display Apparatus 有权
    显示装置

    公开(公告)号:US20070286973A1

    公开(公告)日:2007-12-13

    申请号:US11756653

    申请日:2007-06-01

    IPC分类号: B29D22/00

    摘要: A sealing glass of a low melting point glass composition which is a phosphate glass that contains transition metal wherein the glass contains 15 to 35% of BaO and Sb2O3 (in total) and the ratio by weight of BaO to Sb2O3 or Sb2O3 to BaO is 0.3 or less. Particularly the transition metal is vanadium and the glass contains V2O5 of 45 to 60 wt % as vanadium oxide and P2O5 of 15 to 30 wt % as phosphorus oxide. The bonding material is a mixture of a filler and a vanadate-phosphate glass that contains V2O5 as the main ingredient and the glass contains V2O5 of 45 to 60%, P2O5 of 20 to 30%, BaO of 5 to 15%, TeO2 of 0 to 10%, Sb2O3 of 5 to 10%, and WO3 of 0 to 5%. The particle size of the filler is in the range of 1 to 150 μm and the ratio of filler is 80% by volume or less of the adhesive glass.

    摘要翻译: 作为含有过渡金属的磷酸盐玻璃的低熔点玻璃组合物的密封玻璃,其中玻璃含有15〜35%的BaO和Sb 2 O 3(在 总计)和BaO与Sb 2 O 3 3或Sb 2 O 3 3重量比与BaO的重量比为 0.3以下。 特别地,过渡金属是钒,并且玻璃含有作为氧化钒的45〜60重量%的V 2 O 5 O 3和P 2 O 2 > 5重量%为15〜30重量%。 接合材料是含有V 2 O 5 O 5作为主要成分的填料和含钒酸盐 - 磷酸盐玻璃的混合物,玻璃含有V 2, 45〜60%,5〜30%的O 2〜30%,5〜15%的BaO,5〜15% 0〜10%的2〜2%,Sb 2 O 3 3 3以上5〜10%,WO 3〜O 3为0〜 5%。 填料的粒径在1〜150μm的范围内,填料的比例为粘合玻璃的80体积%以下。