Diluent for Preparing Analytical Sample
    3.
    发明申请
    Diluent for Preparing Analytical Sample 审中-公开
    稀释剂用于制备分析样品

    公开(公告)号:US20120015388A1

    公开(公告)日:2012-01-19

    申请号:US13166575

    申请日:2011-06-22

    IPC分类号: C12Q1/54 C12M1/40

    摘要: The ionic strength of a diluent for preparing an analytical sample is set to be 0.06 to 0.16. The analytical sample prepared by using the diluent having the ionic strength within this range can be subjected to both for analyzing a first object in a test sample by electrode method and for analyzing a second object in the test sample by liquid chromatography method, and high-precision measurement can be attained. The analytical sample is especially useful for preparing a sample for measurement used both for measuring glucose concentration in a blood sample by enzyme electrode method and for measuring glycohemoglobin concentration in the blood sample by liquid chromatography method.

    摘要翻译: 用于制备分析样品的稀释剂的离子强度设定为0.06至0.16。 通过使用离子强度在该范围内的稀释剂制备的分析样品可以通过电极法分析测试样品中的第一个物体,并通过液相色谱法分析测试样品中的第二个物体, 可以进行精度测量。 分析样品特别适用于制备用于通过酶电极法测量血液样品中的葡萄糖浓度并通过液相色谱法测量血液样品中的糖血红蛋白浓度的测量样品。

    ANALYZING DEVICE AND METHOD FOR CONTROLLING SAME
    5.
    发明申请
    ANALYZING DEVICE AND METHOD FOR CONTROLLING SAME 有权
    分析装置及其控制方法

    公开(公告)号:US20110185797A1

    公开(公告)日:2011-08-04

    申请号:US13122059

    申请日:2009-10-02

    IPC分类号: G01N30/16 G01N33/00

    摘要: An analyzing device includes a feeder connected to a container in which a sample is contained for sucking the sample from the container and feeding the sample, and a controller for performing control for feeding from the feeder to a measurer. In measuring the sample, the controller performs control so that results of a plurality of times of measurement are obtained with respect to the single container in which the sample is contained, without changing the container. This arrangement allows quick accuracy check.

    摘要翻译: 分析装置包括连接到容器的进料器,在该容器中容纳样品以从容器吸取样品并进料样品;以及控制器,用于进行从进料器进给到测量器的控制。 在测量样品时,控制器执行控制,使得相对于容纳样品的单个容器获得多次测量的结果,而不改变容器。 这种安排允许快速准确的检查。

    Method for reading data from nonvolatile storage element, and nonvolatile storage device
    7.
    发明授权
    Method for reading data from nonvolatile storage element, and nonvolatile storage device 有权
    从非易失性存储元件读取数据的方法和非易失性存储器件

    公开(公告)号:US09142292B2

    公开(公告)日:2015-09-22

    申请号:US13982280

    申请日:2012-01-31

    摘要: Provided is a method for reading data from a variable resistance nonvolatile storage element, where the operation for reading data is less susceptible to a fluctuation phenomenon of resistance values in reading the data. The method includes: detecting a current value Iread that flows through the nonvolatile storage element that can be in a low resistance state RL and a high resistance state RH, with application of a fixed voltage; and determining that (i) the nonvolatile storage element is in a high resistance state when the current value Iread detected in the detecting is smaller than a current reference level Iref, and (ii) the nonvolatile storage element is in a low resistance state when the current value Iread detected in the detecting is larger than the reference level Iref, the current reference level Iref being defined by (IRL+IRH)/2

    摘要翻译: 提供了一种用于从可变电阻非易失性存储元件读取数据的方法,其中用于读取数据的操作对读取数据中的电阻值的波动现象不太敏感。 该方法包括:通过施加固定电压来检测流过可以处于低电阻状态RL和高电阻状态RH的非易失性存储元件的电流值Iread; 并且当所述检测中检测到的电流值Iread小于电流参考电平Iref时,确定(i)所述非易失性存储元件处于高电阻状态,并且(ii)当所述非易失性存储元件处于低电阻状态时 在检测中检测到的电流值Iread大于参考电平Iref,当前参考电平Iref由(IRL + IRH)/ 2

    METHOD FOR DRIVING NONVOLATILE MEMORY ELEMENT, AND NONVOLATILE MEMORY DEVICE
    8.
    发明申请
    METHOD FOR DRIVING NONVOLATILE MEMORY ELEMENT, AND NONVOLATILE MEMORY DEVICE 有权
    用于驱动非易失性存储器元件的方法和非易失性存储器件

    公开(公告)号:US20140029330A1

    公开(公告)日:2014-01-30

    申请号:US14004447

    申请日:2012-03-13

    IPC分类号: G11C13/00

    摘要: A method for driving a nonvolatile memory element includes: a writing step of changing a variable resistance layer to a low resistance state, by applying a writing voltage pulse having a first polarity; and an erasing step of changing the variable resistance layer to a high resistance state, by applying an erasing voltage pulse having a second polarity different from the first polarity, wherein in the writing step, a first input and output terminal of a field effect transistor is a source terminal of the transistor, and when a pulse width of the writing voltage pulse is PWLR and a pulse width of the erasing voltage pulse is PWHR, PWLR and PWHR satisfy a relationship of PWLR

    摘要翻译: 一种用于驱动非易失性存储元件的方法包括:通过施加具有第一极性的写入电压脉冲将可变电阻层改变为低电阻状态的写入步骤; 以及通过施加具有与第一极性不同的第二极性的擦除电压脉冲将可变电阻层改变为高电阻状态的擦除步骤,其中在写入步骤中,场效应晶体管的第一输入和输出端子是 晶体管的源极端子,并且当写入电压脉冲的脉冲宽度为PWLR且擦除电压脉冲的脉冲宽度为PWHR时,PWLR和PWHR满足PWLR

    METHOD FOR READING DATA FROM NONVOLATILE STORAGE ELEMENT, AND NONVOLATILE STORAGE DEVICE
    9.
    发明申请
    METHOD FOR READING DATA FROM NONVOLATILE STORAGE ELEMENT, AND NONVOLATILE STORAGE DEVICE 有权
    从非易失存储元件读取数据的方法和非易失性存储设备

    公开(公告)号:US20130308371A1

    公开(公告)日:2013-11-21

    申请号:US13982280

    申请日:2012-01-31

    IPC分类号: G11C13/00

    摘要: Provided is a method for reading data from a variable resistance nonvolatile storage element, where the operation for reading data is less susceptible to a fluctuation phenomenon of resistance values in reading the data. The method includes: detecting a current value Iread that flows through the nonvolatile storage element that can be in a low resistance state RL and a high resistance state RH, with application of a fixed voltage; and determining that (i) the nonvolatile storage element is in a high resistance state when the current value Iread detected in the detecting is smaller than a current reference level Iref, and (ii) the nonvolatile storage element is in a low resistance state when the current value Iread detected in the detecting is larger than the reference level Iref, the current reference level Iref being defined by (IRL+IRH)/2

    摘要翻译: 提供了一种用于从可变电阻非易失性存储元件读取数据的方法,其中用于读取数据的操作对读取数据中的电阻值的波动现象不太敏感。 该方法包括:通过施加固定电压来检测流过可以处于低电阻状态RL和高电阻状态RH的非易失性存储元件的电流值Iread; 并且当所述检测中检测到的电流值Iread小于电流参考电平Iref时,确定(i)所述非易失性存储元件处于高电阻状态,并且(ii)当所述非易失性存储元件处于低电阻状态时 在检测中检测到的电流值Iread大于参考电平Iref,当前参考电平Iref由(IRL + IRH)/ 2