摘要:
According to the present invention, a first p-side electrode 7A made of metal which is provided with regularly arranged holes 10 having a diameter smaller than a laser oscillation wavelength and a second p-side electrode 7B arranged around the periphery of the first p-type electrode 7A are used as a p-side mirror of a surface-emitting laser. Light in a resonator formed of a p-side electrode 7 and an n-type mirror 2 is first converted to a surface plasmon and then reconverted to the light by the p-side electrode 7A, and then emitted outside the resonator. This improves the light transmittance, thereby permitting use of metal which is considered to have inherently low light transmittance as a material for the p-side electrode 7. If the p-side electrode 7 is made of metal, operating voltage is reduced and heat dissipation improves, without causing a spike in a valence band, which occurs when a semiconductor layer is used. Further, due to the nonlinear effect of the mirror, optical feedback to the inside of the resonator is controlled, whereby a laser device with excellent noise characteristic is obtained.
摘要:
According to the present invention, a first p-side electrode 7A made of metal which is provided with regularly arranged holes 10 having a diameter smaller than a laser oscillation wavelength and a second p-side electrode 7B arranged around the periphery of the first p-type electrode 7A are used as a p-side mirror of a surface-emitting laser. Light in a resonator formed of a p-side electrode 7 and an n-type mirror 2 is first converted to a surface plasmon and then reconverted to the light by the p-side electrode 7A, and then emitted outside the resonator.
摘要:
The present invention provides a solid-state imaging device including an optical element that efficiently condenses even a wide-angle incident light and has a color separation function. The solid-state imaging device includes pixels, and in the device each pixel includes: a light receiving element; and an optical element, whose surface at least, is made of metal, the optical element has: an aperture; and convex parts which are arranged cyclically, and a distance between adjacent convex parts and a width of each convex part range from 0 to 1 wavelength of light to be condensed.
摘要:
The present invention provides a solid-state imaging device including an optical element that efficiently condenses even wide-angle incident light and has a color separation function. The solid-state imaging device includes pixels, and in the device each pixel includes: a light receiving element; and an optical element, whose surface, at least, is made of metal, the optical element has: an aperture; and convex parts which are arranged cyclically, and a distance between adjacent convex parts and a width of each convex part range from 0 to 1 wavelength of the light to be condensed.
摘要:
An inventive optical pickup includes: a base; a movable part; a fixed part; and a first yoke. The movable part, fixed part and first yoke are provided over the base. The movable part is provided with: a hologram element; a package equipped with a laser/photodetectors integrated element in which a semiconductor laser and photodetectors are integrated; and an objective lens. A magnet is provided on each of second yokes provided on the base, and a heat dissipating medium is provided in a gap between a package metal section of the package and another magnet.
摘要:
The invention provides a night-vision imaging apparatus including: a light emission unit that emits infrared light; a solid-state imaging device that converts the infrared light into a first signal; a light-emission control unit that allows the light emission unit to emit the infrared light which is modulated according to a temporally pseudo-random first modulation; and an extraction unit that extracts, according to the first modulation, a signal corresponding to the infrared light emitted by the light emission unit from the first signal.
摘要:
It is realized a high sensitive solid-state imaging apparatus which corresponds to an optical system having a short focal length (an optical system having a large incident angle θ).Each pixel (2.8 mm square in size) includes a distributed refractive index lens (1), a color filter (2) for green, Al wirings (3), a signal transmitting unit (4), a planarized layer (5), a light-receiving element (Si photodiode) (6), and an Si substrate (7). The concentric circle structure of the distributed index lens is made of four types of materials having different refractive indexes such as TiO2 (n=2.53), SiN (n=2.53), SiO2 (n=2.53), and air (n=1.0). In the concentric structure, a radial difference of outer peripheries of adjacent circular light-transmitting films is 100 nm. Furthermore, the film thickness is 0.4 μm.
摘要:
A semiconductor device includes: a substrate having in its principal surface first and second recessed portions formed adjacent to each other; and first and second semiconductor laser chips each having a portion that is inserted in one of the recessed portions. The depth of the recessed portions is smaller than the height of the first and second semiconductor laser chips that are disposed in the recessed portions.
摘要:
In a semiconductor device fabrication method using a fluidic self-assembly technique in which in a liquid, a plurality of semiconductor elements are mounted in a self-aligned manner on a substrate with a plurality of recessed portions formed therein, protruding potions that are inserted in the respective recessed portions of the substrate are formed in the lower portions of the respective semiconductor elements, the liquid in which the semiconductor elements have been spread is poured over the substrate intermittently, and the substrate is rotated in a period of time in which the liquid is not poured.
摘要:
A high sensitive solid-state imaging apparatus which corresponds to an optical system has a short focal length (an optical system having a large incident angle θ). Each pixel (2.8 mm square in size) includes a distributed refractive index lens, a color filter for green, Al wirings, a signal transmitting unit, a planarized layer, a light-receiving element (Si photodiode), and an Si substrate. The concentric circle structure of the distributed index lens is made of four types of materials having different refractive indexes such as TiO2 (n=2.53), SiN (n=2.53), SiO2 (n=2.53), and air (n=1.0). In the concentric structure, a radial difference of outer peripheries of adjacent circular light-transmitting films is 100 nm. Furthermore, the film thickness is 0.4 νm.