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    Semiconductor laser module with peltier module for regulating a temperature of a semiconductor laser chip
    1.
    发明授权
    Semiconductor laser module with peltier module for regulating a temperature of a semiconductor laser chip 有权
    半导体激光器模块，带有用于调节半导体激光芯片温度的珀耳帖模块

    公开(公告)号：US06697399B2

    公开(公告)日：2004-02-24

    申请号：US09864249

    申请日：2001-05-25

    申请人： Toshio Kimura ,  Takashi Shigematsu ,  Shinichiro Iizuka ,  Takeshi Aikiyo

    发明人： Toshio Kimura ,  Takashi Shigematsu ,  Shinichiro Iizuka ,  Takeshi Aikiyo

    IPC分类号： H01L2306

    CPC分类号： H01S5/02212 ,  H01S5/02284 ,  H01S5/02415 ,  H01S5/0261 ,  Y10S257/93

    摘要： A bottom plate (4a) of a box-shaped package (4) is made of a metal. Portions of the package (4) (peripheral wall (4b) and cover plate (4c)) other than the bottom plate (4a) are made of a resin or a ceramic that is more economical than the metal. The material cost of the package (4) can thus be reduced in comparison with the case where the package (4) is made of the metal as a whole. A Peltier module (5) is fixed to the bottom plate (4a). A base (6) is fixed over the Peltier module (5), and a semiconductor laser chip (2) is disposed on this base (6). Heat from the semiconductor laser chip (2) and from the Peltier module (5) can be efficiently radiated through the bottom plate (4a) made of the metal, and deterioration of heat radiation performance can be prevented.

    摘要翻译： 盒形包装（4）的底板（4a）由金属制成。 除了底板（4a）之外的包装件（4）（周壁（4b）和盖板（4c））的部分由比金属更经济的树脂或陶瓷制成。 与包装（4）整体由金属制成的情况相比，可以减小包装（4）的材料成本。 帕尔贴模块（5）固定在底板（4a）上。 基座（6）固定在珀耳帖模块（5）上，半导体激光芯片（2）设置在该基座（6）上。 来自半导体激光芯片（2）和珀尔贴模块（5）的热量可以有效地通过由金属制成的底板（4a）辐射，并且可以防止散热性能的劣化。

    Method and apparatus for inspecting optical modules
    4.
    发明授权
    Method and apparatus for inspecting optical modules 有权
    用于检查光学模块的方法和装置

    公开(公告)号：US07102738B2

    公开(公告)日：2006-09-05

    申请号：US10665464

    申请日：2003-09-22

    申请人： Hiroyuki Matsuura ,  Hiroshi Ichikawa ,  Toshio Kimura ,  Takeshi Aikiyo ,  Masayoshi Seki

    发明人： Hiroyuki Matsuura ,  Hiroshi Ichikawa ,  Toshio Kimura ,  Takeshi Aikiyo ,  Masayoshi Seki

    IPC分类号： G01N21/00

    CPC分类号： G01M11/33

    摘要： A method and apparatus for inspecting a plurality of optical modules, in which the optical modules are given channel numbers, a plurality of inspection items, which are related to optical characteristics and/or electrical characteristics of the optical modules, are measured in parallel, and measurement data on the inspection items is stored in storing device. This makes it possible to inspect the optical modules efficiently in a short time, eliminating waiting time.

    摘要翻译： 测量与光学模块的光学特性和/或电气特性有关的多个检查项目，其中光学模块被给予通道号的多个光学模块的并行测量方法和装置，以及 检查项目的测量数据存储在存储装置中。 这样可以在短时间内有效地检查光模块，从而消除等待时间。

    Semiconductor laser device and semiconductor laser module using the same
    5.
    发明授权
    Semiconductor laser device and semiconductor laser module using the same 有权
    半导体激光器件和半导体激光器模块使用相同

    公开(公告)号：US06567447B1

    公开(公告)日：2003-05-20

    申请号：US09680153

    申请日：2000-10-03

    申请人： Junji Yoshida ,  Naoki Tsukiji ,  Akira Iketani ,  Naoki Kimura ,  Jun Niekawa ,  Toshio Kimura ,  Takeshi Aikiyo

    发明人： Junji Yoshida ,  Naoki Tsukiji ,  Akira Iketani ,  Naoki Kimura ,  Jun Niekawa ,  Toshio Kimura ,  Takeshi Aikiyo

    IPC分类号： H01S500

    CPC分类号： H01S5/34 ,  B82Y20/00 ,  H01S5/02216 ,  H01S5/02284 ,  H01S5/02415 ,  H01S5/02492 ,  H01S5/028 ,  H01S5/1039 ,  H01S5/146 ,  H01S5/3403

    摘要： In the semiconductor laser device of the present invention, a semiconductor stacked structure including an active layer comprising a strained multi-quantum well structure is formed on a substrate 1, a cavity length is larger than 1000 &mgr;m but equal to or smaller than 1800 &mgr;m, and a low-reflection film S1 having a reflectance of 3% or less is formed on one facet and a high-reflection film S2 having a reflectance of 90% or more is formed on the other facet. The semiconductor laser module has a structure in which the semiconductor laser device is set to a cooling device constituted by electrically alternately arranging 40 pairs or more of the Peltier elements and holding them by top and bottom ceramic plates and sealed in the package. A grating having a reflection bandwidth of 1.5 nm or less is formed on an optical fiber to be built in.

    摘要翻译： 在本发明的半导体激光装置中，在基板1上形成包括应变多量子阱结构的有源层的半导体层叠结构，空洞长度大于1000μm，但等于或小于1800μm， 并且在一个面上形成反射率为3％以下的低反射膜S1，另一方面形成反射率为90％以上的高反射膜S2。 半导体激光器模块具有这样的结构，其中半导体激光器件被设置为通过电气交替地布置40对或更多个珀耳帖元件并由顶部和底部陶瓷板保持并且密封在封装中的冷却装置。 在内置的光纤上形成具有1.5nm以下的反射带宽的光栅。