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    Optically controlled MEM switches
    1.
    发明授权
    Optically controlled MEM switches 失效
    光控MEM开关

    公开(公告)号：US06803559B2

    公开(公告)日：2004-10-12

    申请号：US10439624

    申请日：2003-05-15

    申请人： Tsung-Yuan Hsu ,  Robert Y. Loo ,  Greg Tangonan ,  Juan F. Lam

    发明人： Tsung-Yuan Hsu ,  Robert Y. Loo ,  Greg Tangonan ,  Juan F. Lam

    IPC分类号： G01J136

    CPC分类号： H01H59/0009 ,  H01H1/0036 ,  H01H47/24 ,  H01H67/22

    摘要： An optically controlled micro-electromechanical (MEM) switch is described which desirably utilizes photoconductive properties of a semiconductive substrate upon which MEM switches are fabricated. In one embodiment the bias voltage provided for actuation of the switch is altered by illuminating an optoelectric portion of the switch to deactivate the switch. In an alternative embodiment, a photovoltaic device provides voltage to actuate the switch without any bias lines at all. Due to the hysteresis of the electromechanical switching as a function of applied voltage, only modest variation of voltage applied to the switch is necessary to cause the switch to open or close sharply under optical control.

    摘要翻译： 描述了一种光学控制的微机电（MEM）开关，其理想地利用其上制造有MEM开关的半导体基板的光导特性。 在一个实施例中，通过照亮开关的光电部分来改变为开关的启动提供的偏置电压，以使开关失效。 在替代实施例中，光伏器件提供电压以完全启动开关而没有任何偏置线。 由于作为施加电压的函数的机电开关的滞后，仅需要施加到开关的电压的适度变化，以使开关在光学控制下急剧地打开或闭合。

    Microelectromechanical correlation device and method
    2.
    发明授权
    Microelectromechanical correlation device and method 失效
    微机电相关装置及方法

    公开(公告)号：US06604425B1

    公开(公告)日：2003-08-12

    申请号：US09591113

    申请日：2000-06-09

    申请人： Tsung-Yuan Hsu ,  Robert Y. Loo ,  Juan F. Lam

    发明人： Tsung-Yuan Hsu ,  Robert Y. Loo ,  Juan F. Lam

    IPC分类号： G01L912

    CPC分类号： G01L1/148 ,  G01L1/086

    摘要： A method and apparatus for comparing a force to a signal, or comparing two signals, through mechanical movement of capacitive plates in a transducer. The transducer plates are separated by d, which in one embodiment is preferably a linear function of a pressure or force F. In that embodiment, application of a signal i(t+&tgr;) to the plates will cause a voltage representing a correlation between F and i to appear between the plates. In another embodiment, instead of an external mechanical force or pressure, an electrical signal V related to a signal S may drive the transducer plates to achieve a voltage indicating a correlation between S and the signal input i(t+&tgr;). Transducers to practice the invention may be microelectromechanical devices fabricated using integrated circuit techniques to permit small size and low cost.

    摘要翻译： 一种用于通过传感器中的电容板的机械移动来比较力与信号或比较两个信号的方法和装置。 传感器板被d分开，在一个实施例中，传感器板优选地是压力或力F的线性函数。在该实施例中，将信号i（t +τ）施加到板将导致表示F 我出现在盘子之间。 在另一个实施例中，代替外部机械力或压力，与信号S相关的电信号V可以驱动换能器板以实现指示S与信号输入i（t +τ）之间的相关性的电压。 用于实践本发明的传感器可以是使用集成电路技术制造的微机电装置，以允许小尺寸和低成本。

    Optically controlled MEM switches
    3.
    发明授权
    Optically controlled MEM switches 失效
    光控MEM开关

    公开(公告)号：US06310339B1

    公开(公告)日：2001-10-30

    申请号：US09429234

    申请日：1999-10-28

    申请人： Tsung-Yuan Hsu ,  Robert Y. Loo ,  Greg Tangonan ,  Juan F. Lam

    发明人： Tsung-Yuan Hsu ,  Robert Y. Loo ,  Greg Tangonan ,  Juan F. Lam

    IPC分类号： H01L3100

    CPC分类号： H01H59/0009 ,  H01H1/0036 ,  H01H47/24 ,  H01H67/22

    摘要： An optically controlled micro-electromechanical (MEM) switch is described which desirably utilizes photoconductive properties of a semiconductive substrate upon which MEM switches are fabricated. In one embodiment the bias voltage provided for actuation of the switch is altered by illuminating an optoelectric portion of the switch to deactivate the switch. In an alternative embodiment, a photovoltaic device provides voltage to actuate the switch without any bias lines at all. Due to the hysteresis of the electromechanical switching as a function of applied voltage, only modest variation of voltage applied to the switch is necessary to cause the switch to open or close sharply under optical control.

    摘要翻译： 描述了一种光学控制的微机电（MEM）开关，其理想地利用其上制造有MEM开关的半导体基板的光导特性。 在一个实施例中，通过照亮开关的光电部分来改变为开关的启动提供的偏置电压，以使开关失效。 在替代实施例中，光伏器件提供电压以完全启动开关而没有任何偏置线。 由于作为施加电压的函数的机电开关的滞后，仅需要对开关施加的适当的电压变化使得开关在光学控制下急剧地打开或闭合。

    Optically controlled MEM switches
    4.
    发明授权
    Optically controlled MEM switches 有权
    光控MEM开关

    公开(公告)号：US06639205B2

    公开(公告)日：2003-10-28

    申请号：US09978314

    申请日：2001-10-15

    申请人： Tsung-Yuan Hsu ,  Robert Y. Loo ,  Greg Tangonan ,  Juan F. Lam

    发明人： Tsung-Yuan Hsu ,  Robert Y. Loo ,  Greg Tangonan ,  Juan F. Lam

    IPC分类号： G01J136

    CPC分类号： H01H59/0009 ,  H01H1/0036 ,  H01H47/24 ,  H01H67/22

    摘要： An optically controlled micro-electromechanical (MEM) switch is described which desirably utilizes photoconductive properties of a semiconductive substrate upon which MEM switches are fabricated. In one embodiment the bias voltage provided for actuation of the switch is altered by illuminating an optoelectric portion of the switch to deactivate the switch. In an alternative embodiment, a photovoltaic device provides voltage to actuate the switch without any bias lines at all. Due to the hysteresis of the electromechanical switching as a function of applied voltage, only modest variation of voltage applied to the switch is necessary to cause the switch to open or close sharply under optical control.

    摘要翻译： 描述了一种光学控制的微机电（MEM）开关，其理想地利用其上制造有MEM开关的半导体基板的光导特性。 在一个实施例中，通过照亮开关的光电部分来改变为开关的启动提供的偏置电压，以使开关失效。 在替代实施例中，光伏器件提供电压以完全启动开关而没有任何偏置线。 由于作为施加电压的函数的机电开关的滞后，仅需要施加到开关的电压的适度变化，以使开关在光学控制下急剧地打开或闭合。

    Low-cost HDMI-D packaging technique for integrating an efficient reconfigurable antenna array with RF MEMS switches and a high impedance surface
    5.
    发明授权
    Low-cost HDMI-D packaging technique for integrating an efficient reconfigurable antenna array with RF MEMS switches and a high impedance surface 有权
    低成本HDMI-D封装技术，用于将高效可重构天线阵列与RF MEMS开关和高阻抗表面集成

    公开(公告)号：US06670921B2

    公开(公告)日：2003-12-30

    申请号：US09906035

    申请日：2001-07-13

    申请人： Daniel F. Sievenpiper ,  Adele E. Schmitz ,  James H. Schaffner ,  Gregory L. Tangonan ,  Tsung-Yuan Hsu ,  Robert Y. Loo ,  Robert S. Miles

    发明人： Daniel F. Sievenpiper ,  Adele E. Schmitz ,  James H. Schaffner ,  Gregory L. Tangonan ,  Tsung-Yuan Hsu ,  Robert Y. Loo ,  Robert S. Miles

    IPC分类号： H01Q138

    CPC分类号： H01P1/2005 ,  H01Q1/38 ,  H01Q15/0066 ,  H01Q15/008

    摘要： A flexible antenna array comprises a plurality of layers of thin metal and a flexible insulating medium arranged as a sandwich of layers. Each layer of the sandwich is patterned as needed to define: (i) antenna segments patterned in one of the metal layers, (ii) an array of metallic top elements formed in a layer spaced from the the antenna segments, the array of metallic top elements being patterned in another metal layer, (iii) a metallic ground plane formed in a layer spaced from the array of metallic top elements, the metallic ground plane having been formed from still another metal layer, and (iv) inductive elements coupling each of the top elements in the array of metallic top elements with said ground plan. An array of remotely controlled switches are provided for coupling selected ones of said antenna segments together.

    摘要翻译： 柔性天线阵列包括多层薄金属和布置为层间夹层的柔性绝缘介质。 夹层的每个层根据需要被图案化以限定：（i）在金属层之一中图案化的天线段，（ii）形成在与天线段间隔开的层中的金属顶部元件阵列，金属顶部阵列 元件在另一金属层中被图案化，（iii）金属接地平面，其形成在与金属顶部元件阵列间隔开的层中，金属接地平面已由另一金属层形成，以及（iv） 金属顶部元素阵列中的顶部元素具有所述平面图。 提供了一组遥控开关，用于将选定的天线段耦合在一起。

    CMOS-compatible MEM switches and method of making
    6.
    发明授权
    CMOS-compatible MEM switches and method of making 失效

    公开(公告)号：US06667245B2

    公开(公告)日：2003-12-23

    申请号：US10016894

    申请日：2001-12-13

    申请人： Lap-Wai Chow ,  Tsung-Yuan Hsu ,  Daniel J. Hyman ,  Robert Y. Loo ,  Paul Ouyang ,  James H. Schaffner ,  Adele Schmitz ,  Robert N. Schwartz

    发明人： Lap-Wai Chow ,  Tsung-Yuan Hsu ,  Daniel J. Hyman ,  Robert Y. Loo ,  Paul Ouyang ,  James H. Schaffner ,  Adele Schmitz ,  Robert N. Schwartz

    IPC分类号： H01L2100

    CPC分类号： B81C1/00246 ,  B81B2201/014 ,  B81C2201/014 ,  B81C2203/0714 ,  B81C2203/0735 ,  H01H1/58 ,  H01H59/0009 ,  H01H2001/0057

    摘要： A microelectromechanical (MEM) switch is fabricated inexpensively by using processing steps which are standard for fabricating multiple metal layer integrated circuits, such as CMOS. The exact steps may be adjusted to be compatible with the process of a particular foundry, resulting in a device which is both low cost and readily integrable with other circuits. The processing steps include making contacts for the MEM switch from metal plugs which are ordinarily used as vias to connect metal layers which are separated by a dielectric layer. Such contact vias are formed on either side of a sacrificial metallization area, and then the interconnect metallization is removed from between the contact vias, leaving them separated. Dielectric surrounding the contacts is etched back so that they protrude toward each other. Thus, when the contacts are moved toward each other by actuating the MEM switch, they connect firmly without obstruction. Tungsten is typically used to form vias in CMOS processes, and it makes an excellent contact material, but other via metals may also be employed as contacts. Interconnect metallization may be employed for other structural and interconnect needs of the MEM switch, and is preferably standard for the foundry and process used. Various metals and dielectric materials may be used to create the switches, but in a preferred embodiment the interconnect metal layers are aluminum and the dielectric material is SiO2, materials which are fully compatible with standard four-layer CMOS fabrication processes.

    CMOS-compatible MEM switches and method of making
    7.
    发明授权
    CMOS-compatible MEM switches and method of making 失效
    CMOS兼容MEM开关及制作方法

    公开(公告)号：US06396368B1

    公开(公告)日：2002-05-28

    申请号：US09438085

    申请日：1999-11-10

    申请人： Lap-Wai Chow ,  Tsung-Yuan Hsu ,  Daniel J. Hyman ,  Robert Y. Loo ,  Paul Ouyang ,  James H. Schaffner ,  Adele Schmitz ,  Robert N. Schwartz

    发明人： Lap-Wai Chow ,  Tsung-Yuan Hsu ,  Daniel J. Hyman ,  Robert Y. Loo ,  Paul Ouyang ,  James H. Schaffner ,  Adele Schmitz ,  Robert N. Schwartz

    IPC分类号： H01P110

    CPC分类号： B81C1/00246 ,  B81B2201/014 ,  B81C2201/014 ,  B81C2203/0714 ,  B81C2203/0735 ,  H01H1/58 ,  H01H59/0009 ,  H01H2001/0057

    摘要： A microelectromechanical (MEM) switch is fabricated inexpensively by using processing steps which are standard for fabricating multiple metal layer integrated circuits, such as CMOS. The exact steps may be adjusted to be compatible with the process of a particular foundry, resulting in a device which is both low cost and readily integrable with other circuits. The processing steps include making contacts for the MEM switch from metal plugs which are ordinarily used as vias to connect metal layers which are separated by a dielectric layer. Such contact vias are formed on either side of a sacrificial metallization area, and then the interconnect metallization is removed from between the contact vias, leaving them separated. Dielectric surrounding the contacts is etched back so that they protrude toward each other. Thus, when the contacts are moved toward each other by actuating the MEM switch, they connect firmly without obstruction. Tungsten is typically used to form vias in CMOS processes, and it makes an excellent contact material, but other via metals may also be employed as contacts. Interconnect metallization may be employed for other structural and interconnect needs of the MEM switch, and is preferably standard for the foundry and process used. Various metals and dielectric materials may be used to create the switches, but in a preferred embodiment the interconnect metal layers are aluminum and the dielectric material is SiO2, materials which are fully compatible with standard four-layer CMOS fabrication processes.

    摘要翻译： 通过使用标准制造多个金属层集成电路（如CMOS）的处理步骤，廉价地制造了微机电（MEM）开关。 可以将精确的步骤调整为与特定代工厂的过程兼容，从而导致低成本且易于与其他电路集成的装置。 处理步骤包括通过通常用作通孔的金属插头进行MEM开关的接触，以连接由电介质层分离的金属层。 这种接触通孔形成在牺牲金属化区域的任一侧，然后从接触通孔之间移除互连金属化，使它们分离。 围绕触点的介质被回蚀，使得它们彼此突出。 因此，当通过致动MEM开关使触点彼此移动时，它们牢固地连接而不阻塞。 钨通常用于在CMOS工艺中形成通孔，并且它制成优良的接触材料，但也可以使用其它通孔金属作为接触。 互连金属化可以用于MEM开关的其他结构和互连需求，并且优选地是用于所使用的铸造和工艺的标准。 可以使用各种金属和介电材料来制造开关，但是在优选实施例中，互连金属层是铝，并且介电材料是SiO 2，与标准四层CMOS制造工艺完全兼容的材料。

    Photoelectronic diode spatial light modulator and eye protection goggles incorporating the same
    9.
    发明授权
    Photoelectronic diode spatial light modulator and eye protection goggles incorporating the same 失效
    光电子二极管空间光调制器和眼睛保护护目镜结合在一起

    公开(公告)号：US4978208A

    公开(公告)日：1990-12-18

    申请号：US383698

    申请日：1989-07-24

    申请人： Tsung-Yuan Hsu ,  Shin-Tson Wu ,  Robert Y. Loo

    发明人： Tsung-Yuan Hsu ,  Shin-Tson Wu ,  Robert Y. Loo

    IPC分类号： A61F9/02 ,  H01L31/14 ,  H01L31/153

    CPC分类号： A61F9/023 ,  H01L31/143 ,  H01L31/153

    摘要： A spatial light modulator includes a photosensor diode and a photoemitting diode array, each having two semiconductive layers of opposite electrical polarities, and which are sandwiched together with layers of the same polarity (P or N) in electrical contact with each other. Transparent electrode layers are formed on the opposite surfaces of the photosensor diode and photoemitting diode array respectively, in electrical contact with the layers of the opposite polarity. The individual photoemitting diodes are electrically and optically isolated from each other. With a voltage applied across the electrodes which causes the photosensor diode to be reverse biased and the photoemitting diodes to be forward biased, the photoemitting diode array generates a visual display which is a reproduction of a light image incident on the photosensor diode. The photosensor diode may be replaced by a single layer of a photoconductive material. Two of the spatial light modulators may be combined in a frame with suitable optics to provide eye protection goggles.

    摘要翻译： 空间光调制器包括光电二极管和光电二极管阵列，每个具有两个具有相反电极性的半导体层，并且它们被彼此电接触的具有相同极性（P或N）的层夹在一起。 透明电极层分别形成在光电二极管和发光二极管阵列的相对表面上，与相反极性的层电接触。 各个发光二极管彼此电隔离和光学隔离。 利用施加在电极两端的电压，使得光电传感器二极管被反向偏置并且光发光二极管被正向偏置，光发光二极管阵列产生视觉显示，其是入射在光电二极管上的光图像的再现。 光传感器二极管可以由单层感光材料代替。 两个空间光调制器可以在框架中与合适的光学器件组合以提供眼睛保护护目镜。