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1.发明申请公开(公告)号：US20120142193A1
公开(公告)日：2012-06-07
申请号：US13292696
申请日：2011-11-09
申请人： Tsutomu OGIHARA , Daisuke KORI , Yusuke BIYAJIMA , Takeru WATANABE , Toshihiko FUJII , Takeshi KINSHO
发明人： Tsutomu OGIHARA , Daisuke KORI , Yusuke BIYAJIMA , Takeru WATANABE , Toshihiko FUJII , Takeshi KINSHO
IPC分类号： H01L21/3105 , C08L61/12 , C08L61/08 , C08G8/04
摘要： There is disclosed a resist underlayer film composition, wherein the composition contains a polymer obtained by condensation of, at least, one or more compounds represented by the following general formula (1-1) and/or general formula (1-2), and one or more kinds of compounds and/or equivalent bodies thereof represented by the following general formula (2). There can be provided an underlayer film composition, especially for a trilayer resist process, that can form an underlayer film having reduced reflectance, (namely, an underlayer film having optimum n-value and k-value), excellent filling-up properties, high pattern-antibending properties, and not causing line fall or wiggling after etching especially in a high aspect line that is thinner than 60 nm, and a patterning process using the same.
摘要翻译： 公开了一种抗蚀剂下层膜组合物，其中组合物含有通过至少一种或多种下列通式（1-1）和/或通式（1-2）表示的化合物的缩合得到的聚合物，和 一种或多种由以下通式（2）表示的化合物和/或其等同体。 可以提供能够形成具有降低的反射率的下层膜（即，具有最佳n值和k值的下层膜）的三层抗蚀剂工艺的下层膜组合物，优异的填充性，高 图案抗菌性，特别是在薄于60nm的高纵横线上，特别是在蚀刻后不会引起线下落或摆动，以及使用其的图案化处理。
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2.发明申请公开(公告)号：US20120171868A1
公开(公告)日：2012-07-05
申请号：US13311137
申请日：2011-12-05
申请人： Tsutomu OGIHARA , Takeru WATANABE , Yusuke BIYAJIMA , Daisuke KORI , Takeshi KINSHO , Toshihiko FUJII
发明人： Tsutomu OGIHARA , Takeru WATANABE , Yusuke BIYAJIMA , Daisuke KORI , Takeshi KINSHO , Toshihiko FUJII
IPC分类号： H01L21/311 , C09D165/02 , C08G61/02
摘要： There is disclosed A resist underlayer film composition, wherein the composition contains a polymer obtained by condensation of, at least, one or more compounds represented by the following general formulae (1-1) and/or (1-2), one or more kinds of a compound represented by the following general formula (2), and one or more kinds of a compound, represented by the following general formula (3), and/or an equivalent body thereof. There can be provided an underlayer film composition, especially for a trilayer resist process, that can form an underlayer film having reduced reflectance, (namely, an underlayer film having optimum n-value and k-value as an antireflective film), excellent filling-up properties, high pattern-antibending properties, and not causing line fall or wiggling after etching especially in a high aspect line that is thinner than 60 nm, and a patterning process using the same.
摘要翻译： 公开了抗蚀剂下层膜组合物，其中组合物含有通过至少一种或多种下列通式（1-1）和/或（1-2）表示的化合物的缩合得到的聚合物：一种或多种 由以下通式（2）表示的化合物的种类以及由以下通式（3）表示的化合物和/或其等同体的一种或多种。 可以提供能够形成具有降低的反射率的下层膜（即，具有最佳n值和k值作为抗反射膜的下层膜）的三层抗蚀剂工艺的下层膜组合物， 特别是在60nm以上的高方位线上，特别是在蚀刻后，不会引起线下落或翘曲，以及使用其的图案化处理。
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3.发明申请公开(公告)号：US20120184103A1
公开(公告)日：2012-07-19
申请号：US13313650
申请日：2011-12-07
申请人： Tsutomu OGIHARA , Daisuke KORI , Yusuke BIYAJIMA , Takeru WATANABE , Toshihiko FUJII , Takeshi KINSHO
发明人： Tsutomu OGIHARA , Daisuke KORI , Yusuke BIYAJIMA , Takeru WATANABE , Toshihiko FUJII , Takeshi KINSHO
IPC分类号： H01L21/3105 , C08L61/12 , C08L61/08 , C08G8/04
摘要： There is disclosed a resist underlayer film composition, wherein the composition contains a polymer obtained by condensation of, at least, one or more compounds represented by the following general formulae (1-1) and/or (1-2), and one or more kinds of compounds, represented by the following general formulae (2-1) and/or (2-2), and/or equivalent bodies thereof. There can be provided an underlayer film composition, especially for a trilayer resist process, that can form an underlayer film having reduced reflectance, (namely, an underlayer film having optimum n-value and k-value as an antireflective film), excellent filling-up properties, high pattern-antibending properties, and not causing line fall or wiggling after etching especially in a high aspect line that is thinner than 60 nm, and a patterning process using the same.
摘要翻译： 公开了一种抗蚀剂下层膜组合物，其中组合物含有通过至少一种或多种由以下通式（1-1）和/或（1-2）表示的化合物的缩合得到的聚合物，以及一种或 更多种由以下通式（2-1）和/或（2-2）表示的化合物和/或其等价物。 可以提供能够形成具有降低的反射率的下层膜（即，具有最佳n值和k值作为抗反射膜的下层膜）的三层抗蚀剂工艺的下层膜组合物， 特别是在60nm以上的高方位线上，特别是在蚀刻后，不会引起线下落或翘曲，以及使用其的图案化处理。
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4.发明申请公开(公告)号：US20120108071A1
公开(公告)日：2012-05-03
申请号：US13269290
申请日：2011-10-07
申请人： Tsutomu OGIHARA , Daisuke KORI , Yusuke BIYAJIMA , Toshihiko FUJII , Takeru WATANABE , Takeshi KINSHO
发明人： Tsutomu OGIHARA , Daisuke KORI , Yusuke BIYAJIMA , Toshihiko FUJII , Takeru WATANABE , Takeshi KINSHO
IPC分类号： H01L21/312 , C09D161/12 , C09D161/08
摘要： There is disclosed a resist underlayer film composition, wherein the composition contains a polymer obtained by condensation of, at least, one or more compounds represented by the following general formula (1-1) and/or (1-2), and one or more kinds of compounds and/or equivalent bodies thereof represented by the following general formula (2). There can be provided an underlayer film composition, especially for a trilayer resist process, that can form an underlayer film having reduced reflectance, namely, an underlayer film having optimum n-value and k-value, excellent filling-up properties, high pattern-antibending properties, and not causing line fall or wiggling after etching especially in a high aspect line that is thinner than 60 nm, and a patterning process using the same.
摘要翻译： 公开了一种抗蚀剂下层膜组合物，其中组合物含有通过至少一种或多种下列通式（1-1）和/或（1-2）表示的化合物缩合得到的聚合物，以及一种或多种 更多种由下列通式（2）表示的化合物和/或其等价物。 可以提供一种特别用于三层抗蚀剂工艺的下层膜组合物，其可以形成具有降低的反射率的下层膜，即具有最佳n值和k值的底层膜，优异的填充性， 抗蚀性能，并且特别是在比60nm薄的高方位线中，特别是在蚀刻后不会引起线下落或摆动，以及使用其的图案化工艺。
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5.发明申请公开(公告)号：US20110177459A1
公开(公告)日：2011-07-21
申请号：US12978978
申请日：2010-12-27
申请人： Tsutomu OGIHARA , Takeru WATANABE , Takeshi KINSHO , Katsuya TAKEMURA , Toshihiko FUJII , Daisuke KORI
发明人： Tsutomu OGIHARA , Takeru WATANABE , Takeshi KINSHO , Katsuya TAKEMURA , Toshihiko FUJII , Daisuke KORI
CPC分类号： G03F7/11 , B82Y10/00 , C08G61/02 , C08G2261/3424 , G03F7/0752 , H01L21/0332 , H01L21/31116 , H01L21/31138 , H01L21/31144
摘要： There is disclosed a resist underlayer film-forming composition comprising, at least: a resin (A) obtained by condensing a compound represented by the following general formula (1) with a compound represented by the following general formula (2) by the aid of an acid catalyst; a compound (B) represented by the general formula (1); a fullerene compound (C); and an organic solvent. There can be a resist underlayer film composition in a multi-layer resist film to be used in lithography, which underlayer film is excellent in property for filling up a height difference of a substrate, possesses a solvent resistance, and is not only capable of preventing occurrence of twisting during etching of a substrate, but also capable of providing an excellently decreased pattern roughness; a process for forming a resist underlayer film by using the composition; and a patterning process.
摘要翻译： 公开了一种抗蚀剂下层膜形成组合物，其至少包括：通过以下通式（1）表示的化合物与下列通式（2）表示的化合物缩合得到的树脂（A）：通过 酸催化剂; 由通式（1）表示的化合物（B）; 富勒烯化合物（C）; 和有机溶剂。 在光刻中使用的多层抗蚀剂膜中可以存在抗蚀剂下层膜组合物，该下层膜具有优异的填充基板的高度差的性能，具有耐溶剂性，并且不仅能够防止 在蚀刻基板期间发生扭曲，而且能够提供优异的图案粗糙度; 通过使用该组合物形成抗蚀剂下层膜的方法; 和图案化过程。
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6.发明申请COMPOSITION FOR RESIST UNDERLAYER FILM, PROCESS FOR FORMING RESIST UNDERLAYER FILM, PATTERNING PROCESS, AND FULLERENE DERIVATIVE 有权耐下层膜的组合物，形成电阻膜的方法，方法和全氟烷烃衍生物公开(公告)号：US20120045900A1
公开(公告)日：2012-02-23
申请号：US13183175
申请日：2011-07-14
IPC分类号： H01L21/311 , C08F2/44 , C07C69/753 , C08L29/02 , C08L33/06 , C08L61/12 , H01L21/312 , C08L39/00
CPC分类号： H01L21/31144 , C07C69/753 , C07C2604/00 , G03F7/11 , H01L21/0271 , H01L21/31116
摘要： The invention provides a composition for a resist underlayer film, the composition for a resist underlayer film to form a resist underlayer film of a multilayer resist film used in lithography, wherein the composition comprises at least (A) a fullerene derivative that is a reaction product of a substance having a fullerene skeleton with a 1,3-diene compound derivative having an electron-withdrawing group and (B) an organic solvent. There can be a composition for a resist underlayer film for a multilayer resist film used in lithography, the composition giving a resist underlayer film having excellent high dry etching resistance, capable of suppressing wiggling during substrate etching with high effectiveness, and capable of avoiding a poisoning problem in upperlayer patterning that uses a chemical amplification resist; a process for forming a resist underlayer film; a patterning process; and a fullerene derivative.
摘要翻译： 本发明提供了一种用于抗蚀剂下层膜的组合物，用于形成抗蚀剂下层膜的组合物，用于形成用于光刻的多层抗蚀剂膜的抗蚀剂下层膜，其中所述组合物至少包含（A）富勒烯衍生物，其为反应产物 具有富勒烯骨架的物质与具有吸电子基团的1,3-二烯化合物衍生物和（B）有机溶剂。 可以使用用于光刻中的多层抗蚀剂膜的抗蚀剂下层膜的组合物，该组合物赋予抗蚀剂下层膜，其具有优异的耐干蚀刻性，能够高效地抑制基板蚀刻期间的扭曲，并且能够避免中毒 使用化学增幅抗蚀剂的上层图案化问题; 形成抗蚀剂下层膜的工序; 图案化过程; 和富勒烯衍生物。
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公开(公告)号：US20120276483A1
公开(公告)日：2012-11-01
申请号：US13430319
申请日：2012-03-26
申请人： Tsutomu OGIHARA , Takafumi UEDA , Toshiharu YANO
发明人： Tsutomu OGIHARA , Takafumi UEDA , Toshiharu YANO
CPC分类号： G03F7/0752 , G03F7/0392 , G03F7/0397 , G03F7/11 , G03F7/2041 , G03F7/325
摘要： The invention provides a patterning process, comprising at least a step of forming a silicon-containing film on a body to be processed by using a composition for the silicon-containing film, a step of forming, on the silicon-containing film, a photoresist film by using a resist composition, a step of exposing to the photoresist film after heat treatment thereof, and a step of forming a negative pattern by dissolving an unexposed area of the photoresist film by using a developer of an organic solvent; wherein a composition giving the silicon-containing film whose pure-water contact angle in the part corresponding to the exposed area of the photoresist film becomes in the range of 35° or more to lower than 70° after exposure is used as the composition. There can be optimum patterning process as a patterning process of a negative resist pattern to be formed by adopting organic solvent-based development.
摘要翻译： 本发明提供一种图案化工艺，其至少包括通过使用含硅膜组合物在待加工物体上形成含硅膜的步骤，在含硅膜上形成光致抗蚀剂的步骤 通过使用抗蚀剂组合物的膜，通过热处理后暴露于光致抗蚀剂膜的步骤，以及通过使用有机溶剂的显影剂溶解光致抗蚀剂膜的未曝光区域而形成负图案的步骤; 其中使用赋予与光致抗蚀剂膜的曝光区域相对应的部分中的纯水接触角在曝光后变为35°以上且低于70°的范围内的含硅膜的组合物作为组合物。 作为通过采用有机溶剂型显影形成的负型抗蚀剂图案的图案化工艺，可以进行最佳的图案化处理。
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8.发明申请公开(公告)号：US20120238095A1
公开(公告)日：2012-09-20
申请号：US13416842
申请日：2012-03-09
申请人： Tsutomu OGIHARA , Takafumi UEDA , Toshiharu YANO
发明人： Tsutomu OGIHARA , Takafumi UEDA , Toshiharu YANO
IPC分类号： H01L21/312 , G03F7/00 , B29C59/02 , G03F7/20
CPC分类号： G03F7/0757 , C08L83/04 , C08L83/14 , C09D183/04 , G03F7/0397 , G03F7/0751 , G03F7/0752 , G03F7/091 , G03F7/094 , G03F7/11 , G03F7/325 , C08G77/04
摘要： The invention provides a patterning process for forming a negative pattern by lithography, comprising at least the steps of: using a composition for forming silicon-containing film, containing specific silicon-containing compound (A) and an organic solvent (B), to form a silicon-containing film; using a silicon-free resist composition to form a photoresist film on the silicon-containing film; heat-treating the photoresist film, and subsequently exposing the photoresist film to a high energy beam; and using a developer comprising an organic solvent to dissolve an unexposed area of the photoresist film, thereby obtaining a negative pattern. There can be a patterning process, which is optimum as a patterning process of a negative resist to be formed by adopting organic solvent-based development, and a composition for forming silicon-containing film to be used in the process.
摘要翻译： 本发明提供一种用于通过光刻形成负型图案的图案化工艺，其至少包括以下步骤：使用含有特定含硅化合物（A）和有机溶剂（B）的含硅膜形成用组合物以形成 含硅膜; 使用无硅抗蚀剂组合物在含硅膜上形成光致抗蚀剂膜; 热处理光致抗蚀剂膜，然后将光致抗蚀剂膜暴露于高能量束; 并使用包含有机溶剂的显影剂来溶解光致抗蚀剂膜的未曝光区域，由此获得负图案。 可以存在作为通过采用有机溶剂型显影形成的负型抗蚀剂的图案化工艺的最佳方案，以及用于形成所述工艺中使用的含硅膜的组合物。
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9.发明申请公开(公告)号：US20120052685A1
公开(公告)日：2012-03-01
申请号：US13205262
申请日：2011-08-08
申请人： Tsutomu OGIHARA , Takafumi UEDA , Toshiharu YANO , Koji HASEGAWA
发明人： Tsutomu OGIHARA , Takafumi UEDA , Toshiharu YANO , Koji HASEGAWA
IPC分类号： H01L21/311 , G03F7/00 , G03F7/11
CPC分类号： G03F7/094 , G03F7/0752 , G03F7/091 , G03F7/11
摘要： A thermosetting silicon-containing film-forming composition for forming a silicon-containing film to be formed in a multi-layer resist process used in lithography, the composition including at least: (A) a silicon-containing compound obtained by hydrolysis-condensation of a hydrolyzable silicon compound and compound(s) selected from the group consisting of a hydrolyzable silicon compound and a reactive compound; (B) a thermal crosslinking accelerator; (C) an organic acid with one, or two or more valency having 1 to 30 carbon atoms; and (D) an organic solvent.
摘要翻译： 一种用于形成用于光刻的多层抗蚀剂工艺中的含硅膜的热固性含硅膜形成组合物，该组合物至少包括：（A）通过水解缩合得到的含硅化合物 可水解硅化合物和选自可水解硅化合物和反应性化合物的化合物; （B）热交联促进剂; （C）具有1至30个碳原子的一价或两价或更多价的有机酸; 和（D）有机溶剂。
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10.发明申请COMPOSITION FOR FORMING A SILICON-CONTAINING RESIST UNDERLAYER FILM AND PATTERNING PROCESS USING THE SAME 有权用于形成含硅膜的膜的组合物和使用其的图案处理方法公开(公告)号：US20130045601A1
公开(公告)日：2013-02-21
申请号：US13570403
申请日：2012-08-09
IPC分类号： H01L21/308 , C08K5/5419 , C08L43/04
摘要： A composition for forming a silicon-containing resist underlayer film that contains: a component (A) including at least one or more compounds selected from the group consisting of a polymer having repeating units shown by the following general formulae (1-1a) and (1-1b) and being capable of generating a phenolic hydroxyl group, a hydrolysate of the polymer, and a hydrolysis-condensate of the polymer, and a component (B) which is a silicon-containing compound obtained by hydrolysis-condensation of a mixture containing, at least, one or more hydrolysable silicon compounds represented by the following general formula (2) and one or more hydrolysable silicon compounds represented by the following general formula (3). R11m11R12m12R13m13Si(OR14)(4-m11-m12-m13) (2) Si(OR15)4 (3)
摘要翻译： 一种用于形成含硅抗蚀剂下层膜的组合物，其含有：包含至少一种或多种选自下列通式（1-1a）和（ 1-1b），并且能够产生酚羟基，聚合物的水解产物和聚合物的水解 - 缩合物，以及通过混合物的水解缩合获得的作为含硅化合物的组分（B） 含有至少一种或多种由以下通式（2）表示的可水解硅化合物和由以下通式（3）表示的一种或多种可水解硅化合物。 R11m11R12m12R13m13Si（OR14）（4-m11-m12-m13）（2）Si（OR15）4（3）
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