公开(公告)号：US20160109760A1

公开(公告)日：2016-04-21

申请号：US14845924

申请日：2015-09-04

申请人： Valerie A. Finnemeyer ,  Robert K. Reich ,  Harry R. Clark ,  Carl O. Bozler ,  Shaun R. Berry ,  Philip J. Bos ,  Douglas R. Bryant

发明人： Valerie A. Finnemeyer ,  Robert K. Reich ,  Harry R. Clark ,  Carl O. Bozler ,  Shaun R. Berry ,  Philip J. Bos ,  Douglas R. Bryant

IPC分类号： G02F1/1337 ,  G02F1/1333

CPC分类号： G02F1/133711 ,  C09K19/56 ,  G02F1/133377 ,  G02F1/133788 ,  G02F2001/133726 ,  G02F2202/043

摘要： Liquid crystal photonic devices and microcavities filled with liquid crystal materials are becoming increasingly popular. These devices often present a challenge when it comes to creating a robust alignment layer in pre-assembled cells. Previous research on photo-definable alignment layers has shown that they have limited stability, particularly against subsequent light exposure. A method of infusing a dye into a microcavity to produce an effective photo-definable alignment layer is described, along with a method of utilizing a pre-polymer infused into the microcavity mixed with the liquid crystal to provide photostability. In this method, the polymer layer, formed under optical irradiation of liquid crystal cells, is effectively localized to a thin region near the substrate surface and thus provides a significant improvement in the photostability of the liquid crystal alignment. This versatile alignment layer method, which can be used in microcavities to displays, offers significant promise for new photonics applications.

摘要翻译： 充满液晶材料的液晶光子器件和微腔变得越来越受欢迎。 当在预组装电池中创建稳健的配向层时，这些器件通常会面临挑战。 以前对光可定义对准层的研究表明，它们具有有限的稳定性，特别是对后续的曝光。 描述了将染料注入微腔以产生有效的光可定义取向层的方法，以及利用注入到与液晶混合的微腔中的预聚物以提供光稳定性的方法。 在该方法中，在液晶单元的光照射下形成的聚合物层有效地定位于基板表面附近的薄区域，从而显着地提高了液晶取向的光稳定性。 这种可用于显微镜的多功能对准层方法为新光子学应用提供了重要的前景。

公开(公告)号：US09835885B2

公开(公告)日：2017-12-05

申请号：US14845941

申请日：2015-09-04

申请人： Robert K. Reich ,  Harry R. Clark ,  Carl O. Bozler ,  Shaun R. Berry ,  Jeremy B. Muldavin

发明人： Robert K. Reich ,  Harry R. Clark ,  Carl O. Bozler ,  Shaun R. Berry ,  Jeremy B. Muldavin

IPC分类号： G02F1/13 ,  H04N5/33 ,  G01J5/58 ,  G02F1/1337 ,  G02F1/13363

CPC分类号： G02F1/132 ,  G01J5/58 ,  G02F1/1337 ,  G02F2001/133638 ,  G02F2203/11 ,  H04N5/33

摘要： The high-pixel-count uncooled thermal imaging arrays disclosed herein have liquid crystal (LC) microcavity transducers separate from the read-out integrated circuit (ROIC). The transducer converts incident infrared (IR) radiation in birefringence changes that can be measured with visible light. In other words, the system uses the temperature sensitivity of the LC birefringence to convert the IR scene to a visible image. Measurements on sample arrays indicate that the LC material quality is similar to that of bulk samples and has good noise performance. Additionally, high-fill-factor arrays on fused-silica substrates may be processed to enable optimization of conditions for greatly improved temperature sensitivity. An additional IR absorber layer may be integrated into the process to tune the structure for the infrared.

公开(公告)号：US20160070125A1

公开(公告)日：2016-03-10

申请号：US14845941

申请日：2015-09-04

申请人： Robert K. Reich ,  Harry R. Clark ,  Carl O. Bozler ,  Shaun R. Berry ,  Jeremy B. Muldavin

发明人： Robert K. Reich ,  Harry R. Clark ,  Carl O. Bozler ,  Shaun R. Berry ,  Jeremy B. Muldavin

IPC分类号： G02F1/13 ,  G02F1/13363 ,  G02F1/1337 ,  H04N5/33 ,  G01J5/08 ,  H04N5/374 ,  H04N5/378 ,  G02F1/1339 ,  G02F1/1341 ,  G02F1/1335 ,  H04N5/372

CPC分类号： G02F1/132 ,  G01J5/58 ,  G02F1/1337 ,  G02F2001/133638 ,  G02F2203/11 ,  H04N5/33

摘要： The high-pixel-count uncooled thermal imaging arrays disclosed herein have liquid crystal (LC) microcavity transducers separate from the read-out integrated circuit (ROIC). The transducer converts incident infrared (IR) radiation in birefringence changes that can be measured with visible light. In other words, the system uses the temperature sensitivity of the LC birefringence to convert the IR scene to a visible image. Measurements on sample arrays indicate that the LC material quality is similar to that of bulk samples and has good noise performance. Additionally, high-fill-factor arrays on fused-silica substrates may be processed to enable optimization of conditions for greatly improved temperature sensitivity. An additional IR absorber layer may be integrated into the process to tune the structure for the infrared.

摘要翻译： 本文公开的高像素数未冷却的热成像阵列具有与读出的集成电路（ROIC）分离的液晶（LC）微腔换能器。 传感器将入射红外（IR）辐射转换成可用可见光测量的双折射变化。 换句话说，该系统使用LC双折射的温度敏感度将IR场景转换成可见图像。 样品阵列上的测量表明，LC材料质量与散装样品相似，具有良好的噪声性能。 另外，可以处理熔融二氧化硅衬底上的高填充因子阵列，以实现极大改善的温度敏感性的条件的优化。 可以在该过程中集成另外的IR吸收层以调谐红外线的结构。

公开(公告)号：US20120188474A1

公开(公告)日：2012-07-26

申请号：US13192523

申请日：2011-07-28

申请人： Robert K. Reich ,  Harry R. Clark

发明人： Robert K. Reich ,  Harry R. Clark

IPC分类号： G02F1/13357

CPC分类号： H04N5/33 ,  G01J5/58 ,  G01J2005/0077 ,  G02F1/132

摘要： The imager includes a lens for focusing infrared light forming a thermal image onto a liquid crystal array thereby changing the temperature of the liquid crystals to alter a physical property of the liquid crystals. A source of visible polarized light is arranged to illuminate the liquid crystal array so that the polarization of light reflected from the liquid crystal array varies with changes in temperature of the liquid crystals. A cross polarizer receives and transmits therethrough the light reflected from the liquid crystal array, the cross polarizer adapted to change the intensity of the light. An imager receives and detects the change in intensity of the light from the cross polarizer so that the thermal image is recreated as an electronic signal. In a preferred embodiment, the physical property is index of refraction and the liquid crystal array includes birefringent nematic liquid crystals.

摘要翻译： 成像器包括用于将形成热图像的红外光聚焦到液晶阵列上的透镜，从而改变液晶的温度以改变液晶的物理性质。 可见偏振光源被布置成照亮液晶阵列，使得从液晶阵列反射的光的偏振随着液晶的温度变化而变化。 交叉偏振器从其中接收并透射从液晶阵列反射的光，交叉偏振器适于改变光的强度。 成像器接收并检测来自交叉偏振器的光的强度变化，使得热图像被重新创建为电子信号。 在优选实施例中，物理性质是折射率，液晶阵列包括双折射向列型液晶。

公开(公告)号：US07501634B1

公开(公告)日：2009-03-10

申请号：US10742285

申请日：2003-12-19

申请人： Robert K. Reich ,  Bernard Kosicji ,  Dennis Rathman ,  Richard Osgood ,  Michael Rose ,  R. Allen Murphy ,  Robert Berger

发明人： Robert K. Reich ,  Bernard Kosicji ,  Dennis Rathman ,  Richard Osgood ,  Michael Rose ,  R. Allen Murphy ,  Robert Berger

IPC分类号： H01L27/146

CPC分类号： H04N5/2353 ,  H01L27/14609 ,  H01L27/14643 ,  H04N5/353

摘要： A large format imager includes an array of pixels for converting electromagnetic radiation into electrical signals and a trigger to from an optical pulse so as to trigger the pixels to generate an integration period. Each pixel includes a photodiode to convert light intensity of high-frequency radiation into an electrical charge, a reset switch to reset the photodiode, circuitry to enable sampling of the electrical charge produced by the photodiode, a photoswitch to convert an optical trigger pulse, received from the trigger, into an electrical signal, an inverter to produce a control signal corresponding to the electrical signal produced by the photoswitch, and control circuitry to locally generate integration control signals. The integration control signals control a start of an integration period for the photodiode, duration of the integration period for the photodiode, and the sampling of the electrical charge produced by the photodiode. The large format imager may also include a trigger for producing an electrical pulse so as to trigger the pixels to generate an integration period and tree type electrical distribution system for propagating the electrical pulse to all the pixels, wherein each pixel includes a global repeater circuit to propagate a first edge of said electrical pulse along said tree type electrical distribution system and a local repeater circuit to provide a local array of pixels with the first edge of the electrical pulse.

摘要翻译： 大格式成像器包括用于将电磁辐射转换为电信号的像素阵列和来自光脉冲的触发，以便触发像素以产生积分周期。 每个像素包括光电二极管以将高频辐射的光强度转换为电荷，复位开关以复位光电二极管，电路以使得能够对由光电二极管产生的电荷进行采样，光接收器转换光接收脉冲 从触发器转换成电信号，逆变器产生对应于由光开关产生的电信号的控制信号，以及控制电路以本地产生积分控制信号。 积分控制信号控制光电二极管的积分周期的开始，光电二极管的积分周期的持续时间以及由光电二极管产生的电荷的采样。 大格式成像器还可以包括用于产生电脉冲的触发器，以便触发像素以产生积分周期，并且用于将电脉冲传播到所有像素的树型配电系统，其中每个像素包括全局中继器电路 沿着所述树型配电系统和本地中继器电路传播所述电脉冲的第一边缘，以向电脉冲的第一边缘提供局部阵列阵列。

公开(公告)号：US20110233386A1

公开(公告)日：2011-09-29

申请号：US12730037

申请日：2010-03-23

申请人： David C. Shaver ,  Bernard B. Kosicki ,  Robert K. Reich ,  Dennis D. Rathman ,  Daniel R. Schuette ,  Brian F. Aull

发明人： David C. Shaver ,  Bernard B. Kosicki ,  Robert K. Reich ,  Dennis D. Rathman ,  Daniel R. Schuette ,  Brian F. Aull

IPC分类号： H01L27/148 ,  H01L31/18 ,  H01L31/107

CPC分类号： H04N5/378 ,  H01L31/107 ,  H01L31/18 ,  H04N5/355 ,  H04N5/357 ,  H04N5/37213

摘要： Embodiments of the present invention include an electron counter with a charge-coupled device (CCD) register configured to transfer electrons to a Geiger-mode avalanche diode (GM-AD) array operably coupled to the output of the CCD register. At high charge levels, a nondestructive amplifier senses the charge at the CCD register output to provide an analog indication of the charge. At low charge levels, noiseless charge splitters or meters divide the charge into single-electron packets, each of which is detected by a GM-AD that provides a digital output indicating whether an electron is present. Example electron counters are particularly well suited for counting photoelectrons generated by large-format, high-speed imaging arrays because they operate with high dynamic range and high sensitivity. As a result, they can be used to image scenes over a wide range of light levels.

摘要翻译： 本发明的实施例包括具有电荷耦合器件（CCD）寄存器的电子计数器，其被配置为将电子转移到可操作地耦合到CCD寄存器的输出的盖革模式雪崩二极管（GM-AD）阵列。 在高电荷电平下，非破坏性放大器检测CCD寄存器输出端的电荷，以提供电荷的模拟指示。 在低电荷水平下，无噪声的电荷分离器或仪表将电荷分成单电子分组，每个分组由GM-AD检测，提供数字输出，指示电子是否存在。 示例电子计数器特别适用于计数由大格式高速成像阵列产生的光电子，因为它们以高动态范围和高灵敏度运行。 因此，它们可以用于在各种各样的光照范围内拍摄场景。

公开(公告)号：US07091530B1

公开(公告)日：2006-08-15

申请号：US10612174

申请日：2003-07-02

申请人： Robert K. Reich ,  Bernard B. Kosicki ,  Jonathan C. Twichell ,  Barry E. Burke ,  Dennis D. Rathman

发明人： Robert K. Reich ,  Bernard B. Kosicki ,  Jonathan C. Twichell ,  Barry E. Burke ,  Dennis D. Rathman

IPC分类号： H01L27/148

CPC分类号： H01L27/1485 ,  H01L27/1464 ,  H01L27/14812 ,  H01L31/035281

摘要： A charge-coupled device imager including an array of super pixels disposed in a semiconductor substrate having a surface that is accessible to incident illumination. For each super pixel there is provided a plurality of subpixels which each correspond to one in the sequence of image frames. Each subpixel includes a doped photogenerated charge collection channel region opposite the illumination-accessible substrate surface, a charge collection channel region control electrode, doped charge drain regions adjacent to the channel region, a charge drain region control electrode, and a doped charge collection control region. To each subpixel are provided channel region and drain region control voltage connections, for independent collection and storage of photogenerated charge from the substrate at the charge collection channel region of a selected subpixel during one in the sequence of image frames and for drainage of photogenerated charge from the substrate to a drain region.

摘要翻译： 一种电荷耦合器件成像器，其包括设置在半导体衬底中的超像素阵列，该半导体衬底具有可入射照明的表面。 对于每个超像素，提供多个子像素，每个子像素对应于图像帧序列中的一个。 每个子像素包括与照明可访问衬底表面相对的掺杂光生电荷收集通道区域，电荷收集通道区域控制电极，与沟道区相邻的掺杂电荷漏极区，电荷漏极区控制电极和掺杂电荷收集控制区 。 每个子像素都提供了沟道区域和漏极区域控制电压连接，用于在图像帧序列中的一个期间，从所选择的子像素的电荷收集通道区域处的基底在基底处独立收集和存储光生电荷，并且将光生电荷从 衬底到漏区。

公开(公告)号：US5712498A

公开(公告)日：1998-01-27

申请号：US703070

申请日：1996-08-26

申请人： Robert K. Reich ,  Eugene D. Savoye ,  Bernard B. Kosicki

发明人： Robert K. Reich ,  Eugene D. Savoye ,  Bernard B. Kosicki

IPC分类号： H01L29/768 ,  H01L31/112 ,  H01L29/80

CPC分类号： H01L29/76833 ,  H01L27/1464 ,  H01L31/1126

摘要： A charge modulation device having a semiconductor region of a first conductivity type. An epitaxial layer of second conductivity type is provided on a portion of the semiconductor region so as to define an FET channel region. A first epitaxial region of the second conductivity type is provided adjacent to and in contact with the epitaxial layer so as to define an FET drain region, the first epitaxial region being electrically isolated from the semiconductor region. A second epitaxial region of the second conductivity type is provided adjacent to and in contact with the epitaxial layer so as to define an FET source region, the second epitaxial region being electrically isolated from the semiconductor region. A third epitaxial region of the first conductivity type or a metal oxide semiconductor is provided to the channel region between the source and drain regions.

摘要翻译： 一种具有第一导电类型的半导体区域的电荷调制装置。 在半导体区域的一部分上设置第二导电类型的外延层，以限定FET沟道区。 第二导电类型的第一外延区域设置成与外延层相邻并与外延层接触，以便限定FET漏区，该第一外延区域与半导体区域电绝缘。 第二导电类型的第二外延区域被设置为与外延层相邻并与外延层接触，以限定FET源极区域，第二外延区域与半导体区域电绝缘。 第一导电类型的第三外延区域或金属氧化物半导体被提供到源极和漏极区域之间的沟道区域。

公开(公告)号：US08426797B2

公开(公告)日：2013-04-23

申请号：US12730048

申请日：2010-03-23

申请人： Brian F. Aull ,  Matthew J. Renzi ,  Robert K. Reich ,  Daniel R. Schuette

发明人： Brian F. Aull ,  Matthew J. Renzi ,  Robert K. Reich ,  Daniel R. Schuette

IPC分类号： H03K21/40

CPC分类号： H04N5/37455 ,  H04N5/355

摘要： Embodiments of the present invention include complementary metal-oxide-semiconductor (CMOS) readout architectures for photon-counting arrays with a photon-counting detector, a digital counter, and an overflow bit in each of the sensing elements in the array. Typically, the photon-counting detector is a Geiger-mode avalanche photodiode (APD) that emits brief pulses every time it detects a photon. The pulse increments the digital counters, which, in turn, sets the overflow bit once it reaches a given count. A rolling readout system operably coupled to each sensing element polls the overflow bit, and, if the overflow bit is high, initiates a data transfer from the overflow bit to a frame store. Compared to other photo-counting imagers, photon-counting imagers with counters and overflow bits operate with decreased transfer bandwidth, high dynamic range, and fine spatial resolution.

摘要翻译： 本发明的实施例包括用于具有光子计数检测器的光子计数阵列的互补金属氧化物半导体（CMOS）读出结构，阵列中每个感测元件中的数字计数器和溢出位。 通常，光子计数检测器是Geiger模式雪崩光电二极管（APD），每次检测到光子时都会发出短脉冲。 脉冲递增数字计数器，一旦它达到给定的计数，这又会设置溢出位。 可操作地耦合到每个感测元件的滚动读出系统轮询溢出位，并且如果溢出位为高，则启动从溢出位到帧存储的数据传送。 与其他光计数成像仪相比，具有计数器和溢出位的光子计数成像器可以减少传输带宽，高动态范围和精细的空间分辨率。

公开(公告)号：US5270558A

公开(公告)日：1993-12-14

申请号：US24805

申请日：1993-03-01

申请人： Robert K. Reich ,  Bernard Kosicki ,  Eugene D. Savoye

发明人： Robert K. Reich ,  Bernard Kosicki ,  Eugene D. Savoye

IPC分类号： H01L27/148 ,  H01L29/10 ,  H01L29/796

CPC分类号： H01L29/1091 ,  H01L27/14831

摘要： A charge-coupled device having an array of pixel elements formed in a substrate, which device is operable in a first state to expand the depletion well regions of each pixel element into the substrate for storing incoming photoelectrons therein and in a second state to contract the expanded depletion well regions to prevent storage of photoelectrons in the contracted depletion well regions.

摘要翻译： 一种具有形成在衬底中的像素元件阵列的电荷耦合器件，该器件可在第一状态下操作，以将每个像素元件的耗尽阱区域扩展到衬底中，用于存储入射光电子，并且在第二状态下收缩 扩大的耗尽井区域以防止光电子在收缩的耗尽井区域中储存。