公开(公告)号：US5764466A

公开(公告)日：1998-06-09

申请号：US789023

申请日：1997-01-27

申请人： Vijay Mangtani ,  Ajit Dubhashi

发明人： Vijay Mangtani ,  Ajit Dubhashi

IPC分类号： H02H7/122 ,  H02H3/00

CPC分类号： H02H7/1227

摘要： A power circuit includes a high-side transistor, a low-side transistor and a current sensing resistor in series connection as well as a threshold detection circuit for turning off the transistors when the current in the current sensing resistor exceeds a predetermined level. The circuit further includes a driver circuit for providing a bias voltage to the low-side transistor and a voltage storing device, such as a capacitor, coupled from the low-side transistor to the driver circuit to maintain the bias voltage at a sufficient magnitude to momentarily keep the low-side transistor on during a fault condition.

摘要翻译： 电源电路包括串联连接的高侧晶体管，低侧晶体管和电流感测电阻器，以及当电流感测电阻器中的电流超过预定电平时关闭晶体管的阈值检测电路。 该电路还包括用于向低侧晶体管提供偏置电压的驱动电路和从低侧晶体管耦合到驱动电路的电容器，例如电容器，以将偏置电压维持在足够大的幅度 在故障状态下暂时保持低侧晶体管导通。

公开(公告)号：US5767731A

公开(公告)日：1998-06-16

申请号：US761838

申请日：1996-12-09

申请人： Vijay Mangtani ,  Ajit Dubhashi

发明人： Vijay Mangtani ,  Ajit Dubhashi

IPC分类号： H03K17/22 ,  H03K17/785 ,  H01L31/00

CPC分类号： H03K17/785 ,  H03K17/22

摘要： A protection circuit for preventing momentary activation of the output of an output-isolated driver during power turn on. The protection circuit operates in a manner which prevents a buffer which is driven by the opto-isolator from turning on power transistors during power turn on, particularly in applications such as switching power supplies, motor controllers and the like.

摘要翻译： 一种用于在电源接通期间防止输出隔离驱动器的输出的瞬时激活的保护电路。 保护电路以防止由光隔离器驱动的缓冲器在电源接通期间打开功率晶体管的方式工作，特别是在诸如开关电源，电机控制器等的应用中。

公开(公告)号：US07250672B2

公开(公告)日：2007-07-31

申请号：US10987697

申请日：2004-11-12

申请人： Mark Pavier ,  Ajit Dubhashi ,  Jorge Cerezo ,  Leigh Cormie ,  Vijay Bolloju

发明人： Mark Pavier ,  Ajit Dubhashi ,  Jorge Cerezo ,  Leigh Cormie ,  Vijay Bolloju

IPC分类号： H01L23/52

CPC分类号： H01L24/49 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/48 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49111 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01031 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/05599

摘要： A semiconductor package that includes two semiconductor die each disposed on a respective die pad and a large tracking distance interposed between at least two leads of the package for better creepage characteristics.

摘要翻译： 一种半导体封装，其包括两个半导体管芯，每个半导体管芯设置在相应的管芯焊盘上，并且具有大的跟踪距离，插入在封装的至少两个引线之间，以获得更好的爬

公开(公告)号：US20060087026A1

公开(公告)日：2006-04-27

申请号：US11239967

申请日：2005-09-30

申请人： Jianjun Cao ,  Jorge Cerezo ,  Ajit Dubhashi ,  Qun Zhao

发明人： Jianjun Cao ,  Jorge Cerezo ,  Ajit Dubhashi ,  Qun Zhao

IPC分类号： H01L23/34 ,  H01L23/48 ,  H01L23/06

CPC分类号： H03F3/217 ,  H01L23/49562 ,  H01L24/37 ,  H01L2224/32245 ,  H01L2224/37147 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/73153 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/8385 ,  H01L2224/84801 ,  H01L2224/8485 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01043 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/30107 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： An audio amplifier assembly that includes a semiconductor package having a semiconductor power die tuned for class D amplifier applications and a conductive clip used for low inductance integration into the amplifier circuit.

摘要翻译： 一种音频放大器组件，其包括具有针对D类放大器应用调谐的半导体功率管芯的半导体封装件和用于将低电感集成到放大器电路中的导电夹子。

公开(公告)号：US5838185A

公开(公告)日：1998-11-17

申请号：US794658

申请日：1997-02-03

申请人： Ajit Dubhashi ,  Tyler Fure

发明人： Ajit Dubhashi ,  Tyler Fure

IPC分类号： H03K17/16 ,  H03K17/567 ,  H03K17/92

CPC分类号： H03K17/16 ,  H03K17/161 ,  H03K17/168 ,  H03K17/567

摘要： In a motor controller circuit, an integrated circuit driver drives a plurality of switching transistors which are organized along a top rail and a bottom rail. To reduce the conduction of current through the parasitic diode D.sub.S1 of the integrated circuit, the switching transistors at the bottom rail are provided with individual Kelvin emitter connections, which reduce the parasitic internal inductances, which otherwise produce highly negative voltages when the top rail transistors are turned off. Further, individual traces are provided on the printed circuit board from the COM terminal to the Kelvin emitters. Finally, a small resistance is provided in series with each Kelvin emitter connection which increases the resistance in series with the parasitic diodes and hence reduces the current flowing in the parasitic diodes.

摘要翻译： 在电动机控制器电路中，集成电路驱动器驱动沿顶轨和底轨组织的多个开关晶体管。 为了减小通过集成电路的寄生二极管DS1的电流的导通，底部导轨上的开关晶体管具有单独的开尔文发射极连接，其减小寄生内部电感，否则当顶部轨道晶体管为 关掉。 此外，印刷电路板上的各个迹线从COM端子到开尔文发射器都提供。 最后，提供与每个开尔文发射极连接串联的小电阻，其增加与寄生二极管串联的电阻，并因此减少在寄生二极管中流动的电流。

公开(公告)号：US06969971B2

公开(公告)日：2005-11-29

申请号：US10726894

申请日：2003-12-02

申请人： Ajit Dubhashi

发明人： Ajit Dubhashi

IPC分类号： H02H11/00 ,  H02J7/00

CPC分类号： H02H11/003 ,  H02J7/0034

摘要： A reverse battery protection circuit comprising a first controlled semiconductor switch for providing current to a load and coupled in series with load terminals across which load terminals the load is adapted to be connected and a second controlled semiconductor switch disposed in a series circuit with a free wheeling diode, the series circuit being coupled across the load terminals.

摘要翻译： 一种反向电池保护电路，包括第一受控半导体开关，用于向负载提供电流并与负载端子串联耦合，负载端子负责连接负载端子，以及第二受控半导体开关，其设置在具有自由转动的串联电路中 二极管，串联电路耦合在负载端子之间。

公开(公告)号：US06819095B1

公开(公告)日：2004-11-16

申请号：US09660813

申请日：2000-09-13

申请人： Ajit Dubhashi ,  Shahin Maloyan ,  Joshua Polack

发明人： Ajit Dubhashi ,  Shahin Maloyan ,  Joshua Polack

IPC分类号： G01R3100

CPC分类号： G01R15/207 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/4846 ,  H01L2224/48472 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/00014 ,  H01L2924/00

摘要： A semiconductor module has a conductive heat sink base which receives a power semiconductor and a printed circuit board mounted above the heat sink and carrying control circuits for the power semiconductor. A rigid L-shaped terminal connected to one electrode of the power semiconductor is mounted on the base and extends upward and adjacent an edge of the printed circuit board. A Hall sensor is mounted on the printed circuit board and is disposed in and intercepts the magnetic field produced by current in the terminal. Magnetic bodies are mounted on opposite sides of the Hall element to concentrate the magnetic field through the Hall sensor.

摘要翻译： 半导体模块具有导电散热器基座，其接收功率半导体和安装在散热器上方并承载用于功率半导体的控制电路的印刷电路板。 连接到功率半导体的一个电极的刚性L形端子安装在基座上并向上延伸并且邻近印刷电路板的边缘。 霍尔传感器安装在印刷电路板上，并被设置在并截获由终端中的电流产生的磁场。 磁体安装在霍尔元件的相对两侧，以将磁场集中在霍尔传感器上。

公开(公告)号：US06744136B2

公开(公告)日：2004-06-01

申请号：US10283414

申请日：2002-10-29

申请人： Ajit Dubhashi

发明人： Ajit Dubhashi

IPC分类号： H01K720

CPC分类号： H01L23/44 ,  H01L23/10 ,  H01L24/48 ,  H01L2224/05599 ,  H01L2224/0603 ,  H01L2224/45099 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01019 ,  H01L2924/1301 ,  H01L2924/13091 ,  H01L2924/16195 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207

摘要： A liquid cooled electronic device and a method for sealing a liquid cooled electronic device are disclosed. The liquid cooled electronic device has at least one heat generating electronic device suspended in an electrically insulative heat transfer fluid. The heat generating device or devices are electrically connected to at least two electrodes, which pass through and are sealed in electrically insulating portion of a sealed housing that encloses the electrically insulative heat transfer fluid. At least one thermally conductive surface is in direct contact with the electrically insulative heat transfer fluid, and at least one thermally conductive surface is sealed to the remainder of the housing, for example.

摘要翻译： 公开了一种液体冷却电子器件和一种密封液体冷却电子器件的方法。 液体冷却的电子器件具有悬挂在电绝缘传热流体中的至少一个发热电子器件。 发热装置电连接至至少两个电极，这两个电极通过并密封在封闭电绝缘传热流体的密封壳体的电绝缘部分中。 至少一个导热表面与电绝缘传热流体直接接触，并且至少一个导热表面例如被密封到壳体的其余部分。

公开(公告)号：US06215435B1

公开(公告)日：2001-04-10

申请号：US09266822

申请日：1999-03-12

申请人： John Parry ,  David C. Tam ,  Christopher C. Chey ,  Ajit Dubhashi ,  Toshio Takahashi ,  Aristide Tchamdsou

发明人： John Parry ,  David C. Tam ,  Christopher C. Chey ,  Ajit Dubhashi ,  Toshio Takahashi ,  Aristide Tchamdsou

IPC分类号： H03M160

CPC分类号： H03K7/08 ,  G01R19/0092 ,  H02P27/06

摘要： A circuit for recovering a signal of interest which is offset by a common mode displacement, such is the case when the signal is the voltage across a current sense resistor located on the high side bus or between the switches of a motor controller circuit. The circuit of the present invention converts the voltage across the resistor into a pulse code modulated data, then downshifts the voltage, and then recovers the signal of interest at the lower voltage by demodulating the signal. The recovered signal is then processed, either with a synchronized sample and hold circuit to provide an analog output, or with a counter and latch to provide a digital output.

摘要翻译： 用于恢复由共模位移偏移的感兴趣信号的电路，例如当信号是位于高侧总线上的电流检测电阻器或电动机控制器电路的开关之间的电压时的情况。 本发明的电路将电阻器两端的电压转换为脉冲编码调制数据，然后降低电压，然后通过解调该信号来恢复较低电压下的感兴趣的信号。 然后，恢复的信号被处理，具有同步采样和保持电路以提供模拟输出，或者与计数器和锁存器一起提供数字输出。

公开(公告)号：US5801557A

公开(公告)日：1998-09-01

申请号：US728309

申请日：1996-10-09

申请人： Ajit Dubhashi ,  Leon Aftandilian

发明人： Ajit Dubhashi ,  Leon Aftandilian

IPC分类号： H01L27/04 ,  H01L29/78 ,  H02M1/08 ,  H02M7/537 ,  H02M7/538 ,  H03B1/00 ,  H03F1/52 ,  H03K17/06 ,  H03K17/16

CPC分类号： H03K17/168 ,  H02M7/538 ,  H03K17/063 ,  H03K17/161

摘要： In a level shifted high voltage MOSgate device driver which drives MOSgate devices such as IGBTs and power MOSFETs, effects of negative voltage swings caused by currents commutating through L.sub.S1 and L.sub.S2 inductances in the power circuits are avoided due to several measures. First, the values of the inductances L.sub.S1 and L.sub.S2 are reduced by keeping short conductor lengths, by other layout/wire bonding techniques to reduce the values of the L.sub.S1 and L.sub.S2 inductances. The external, charging capacitor C.sub.b value is increased substantially to reduce the voltage buildup on the internal circuitry. A typical value is 0.47 .mu.F, for a given circuit, IGBT and layout combination. The size of the C.sub.VCC capacitor is selected to keep the supply voltage as stiff as possible. Preferably, C.sub.VCC is at about ten times the value of the sum of the C.sub.b capacitance in the circuit. The resistance R.sub.b in the bootstrap path is reduced as much as possible, preferably to zero. Finally, a resistor R.sub.COM is optionally added between the common nodes of the driver circuit and the power device circuit.

摘要翻译： 在驱动诸如IGBT和功率MOSFET的MOSgate器件的电平移位高电压MOSgate器件驱动器中，由于几种措施，避免了通过电源电路中的LS1和LS2电感转换的电流引起的负电压摆幅的影响。 首先，通过其他布局/引线键合技术，通过保持短导体长度来减小电感LS1和LS2的值，以减小LS1和LS2电感的值。 外部充电电容器Cb值大幅度增加以减小内部电路上的电压累积。 典型值为0.47μF，对于给定的电路，IGBT和布局组合。 选择CVCC电容器的尺寸以保持电源电压尽可能的硬度。 优选地，CVCC是电路中Cb电容之和的大约十倍。 引导路径中的电阻Rb尽可能地减小，优选为零。 最后，可选地在驱动器电路的公共节点和功率器件电路之间添加电阻器RCOM。