摘要:
A substrate support has a support structure and a coating on the support structure having a carbon-hydrogen network. The coating has a contact surface having a coefficient of friction of less than about 0.3 and a hardness of at least about 8 GPa. The contact surface of the coating is capable of reducing abrasion and contamination of a substrate that contacts the contact surface. In one version, the support structure has a dielectric covering an electrode. A plurality of mesas on the dielectric have a coating with the contact surface thereon.
摘要:
A lifting assembly can lift a substrate from a substrate support and transport the substrate. The lift assembly has a hoop sized to fit about a periphery of the substrate support, and a pair of arcuate fins mounted on the hoop, each arcuate fin comprising a pair of opposing ends having ledges that extend radially inward, each ledge having a raised protrusion to lift a substrate so that the substrate contacts substantially only the raised protrusion, thereby minimizing contact with the ledge, when the pair of fins is used to lift the substrate off the substrate support. The lifting assembly and other process chamber components can have a diamond-like coating having interlinked networks of (i) carbon and hydrogen, and (ii) silicon and oxygen. The diamond-like coating has a contact surface having a coefficient of friction of less than about 0.3, a hardness of at least about 8 GPa, and a metal concentration level of less than about 5×1012 atoms/cm2 of metal. The contact surface reduces contamination of a substrate when directly or indirectly contacting a substrate.
摘要:
A method and apparatus for conditioning a surface of a ceramic body in a process chamber when the process chamber has a vacuum pump, an anode and a cathode. The conditioning method consists of pumping the process chamber down to a vacuum with the vacuum pump, introducing a gas into the chamber, energizing the anode and cathode with RF power to ignite the gas into a plasma, sputter etchinq the surface with ions from the plasma to remove contaminants therefrom. The method is accomplished either within a process chamber to condition, in situ, a ceramic chuck or within a cleaning chamber to condition any form of ceramic body or component.
摘要:
A method and apparatus for conditioning a surface of a ceramic body in a process chamber when the process chamber has a vacuum pump, an anode and a cathode. The conditioning method consists of pumping the process chamber down to a vacuum with the vacuum pump, introducing a gas into the chamber, energizing the anode and cathode with RF power to ignite the gas into a plasma, sputter etching the surface with ions from the plasma to remove contaminants therefrom. The method is accomplished either within a process chamber to condition, in situ, a ceramic chuck or within a cleaning chamber to condition any form of ceramic body or component.
摘要:
An electrostatic chuck is described with independent zone cooling that leads to reduced crosstalk. In one example, the chuck includes a puck to carry a substrate for fabrication processes, and a cooling plate fastened to and thermally coupled to the ceramic puck, the cooling plate having a plurality of different independent cooling channels to carry a heat transfer fluid to transfer heat from the cooling plate.
摘要:
A cleaning wafer cleans process residues from a support surface used in the processing of a substrate in an energized gas. The cleaning wafer has a disc having a liquid precursor derived polyimide layer formed directly on the disc by applying a liquid polyimide precursor to the disc. The polyimide layer has a thickness of less than about 50 microns, and a cleaning surface shaped to match a contour of the support surface. Process residues adhere to the cleaning surface and are cleaned from the support surface upon removal of the cleaning wafer therefrom.
摘要:
A method and apparatus for increasing the sensitivity of an in situ particle monitor. A light scattering technique, preferably using laser light, is employed to monitor particle concentrations within the processing chamber of a plasma-based substrate processing system. Particle concentrations are increased in the light field of the sensor by creating an electric or magnetic field in the processing chamber to concentrate the particles suspended therein.
摘要:
The invention generally provides an apparatus and a method of removing metal oxides, particularly copper oxides and aluminum oxides, from a substrate surface. Primarily, the invention eliminates sputtering of copper oxide from the bottom of an interconnect feature onto the side walls of an interconnect feature, thereby preventing diffusion of the copper atom through the dielectric material and degradation of the device. The invention also eliminates sputtering of the copper oxides onto the chamber side walls that may eventually flake off and cause defects on the substrate. The method of reducing metal oxides from a substrate surface comprises placing the substrate within a plasma processing chamber, flowing a processing gas comprising hydrogen into the chamber, and maintaining a plasma of the processing gas within the chamber through inductive coupling. The method is preferably performed using a dual frequency etch chamber wherein adjustments are made in the processing gas flow, the RF powers and the exhaust pumping speeds to eliminate sputtering of the copper oxide and to maximize the reduction reaction.
摘要:
Apparatus for providing self-regulated gas flow between a wafer and a wafer support surface of a wafer support in a semiconductor wafer processing system. The apparatus consists of a gas inlet port extending through the wafer support for supplying gas to the wafer support surface and a plurality of exhaust ports, extending from the support surface through the wafer support, for exhausting the gas from the support surface, where the plurality of exhaust ports maintain a uniform backside gas pressure between the wafer and the wafer support surface.
摘要:
A stand-off pad, and method of fabricating the same, for supporting a workpiece in a spaced apart relation to a workpiece support chuck. More specifically, the wafer stand-off pad is fabricated of a polymeric material, such as polyimide, which is disposed upon the support surface of the chuck. The stand-off pad maintains a wafer, or other workpiece, in a spaced apart relation to the support surface of the chuck. The distance between the underside surface of the wafer and the chuck is defined by the thickness of the stand-off pad. This distance should be larger than the expected diameter of contaminant particles that may lie on the surface of the chuck. In this manner, the contaminant particles do not adhere to the underside of the wafer during processing and the magnitude of the chucking voltage is maintained between the workpiece and the chuck.