Scattered-ray grid, particularly for a medical X-ray device, and a method of determining the position of the absorption elements of a scattered-ray grid
    1.
    发明授权
    Scattered-ray grid, particularly for a medical X-ray device, and a method of determining the position of the absorption elements of a scattered-ray grid 失效
    特别是用于医疗X射线装置的散射光栅格,以及确定散射光栅格的吸收元件的位置的方法

    公开(公告)号:US06324259B1

    公开(公告)日:2001-11-27

    申请号:US09564463

    申请日:2000-05-03

    IPC分类号: G21K110

    摘要: A scattered-ray grid has a carrier with absorption elements arranged thereon in spaced rows which proceed essentially spoke-like relative to a grid center. Except for one or more rows which originate at the grid center, the individual rows of the scattered-ray grid, or of substantially identical grid sectors of the scattered-ray grid each originate from respectively different radii. The origin of each row is situated in an angle section, which is determined on the basis of at least two points lying on a circle, or an arc of circle, with a predetermined radius and which is divided in a predefined ratio for determining the position of the origin. The predetermined radius is incremented in a stepwise manner to define respective origins for all of the rows.

    摘要翻译: 散射射线格栅具有载体,其吸收元件布置在间隔开的行中,相对于格栅中心基本上是辐条状的。 除了源于网格中心的一行或多行外,散射光栅格的各行或散射光栅格的基本相同的网格扇区各自分别来自不同的半径。 每行的原点位于一个角度部分中,该角度部分是基于位于圆周上的至少两个点或具有预定半径的圆弧确定的,并且以预定比例被划分以确定位置 的起源。 以逐步的方式增加预定的半径以定义所有行的相应起始点。

    AGITATOR FOR ABRASIVE MEDIA
    5.
    发明申请
    AGITATOR FOR ABRASIVE MEDIA 有权
    磨料介质搅拌机

    公开(公告)号:US20100118643A1

    公开(公告)日:2010-05-13

    申请号:US12598698

    申请日:2008-04-30

    申请人: Wolfgang Keller

    发明人: Wolfgang Keller

    IPC分类号: B01F13/00

    摘要: Disclosed is a agitator (1; 1a-1h), particularly for abrasive media, comprising a support disk (2; 2a-2h) to which agitator blades (3; 3a-3h) are connected substantially perpendicular to the support disk (2; 2a-2h), said blades (3; 3a-3h) being arranged substantially in a radial direction. The support disk (2; 2a-2h) is also provided with a hub that receives an agitator shaft which is preferably motor-driven in a suitable manner. The trailing faces of the blades (3; 3a-3h) of the agitator (1; 1a-1h) and/or the area of the blade connections to the support disk (2; 2a-2h) is/are designed to largely prevent vortex shedding. For this purpose, preferred geometrical measures for the agitator blades (3; 3a-3h), the support disk (2; 2a-2h), and the connection of the blades (3; 3a-3h) to the support disk (2; 2a-2h) are disclosed and described.

    摘要翻译: 公开了一种搅拌器(1; 1a-1h),特别是用于研磨介质的搅拌器(1; 1a-1h),其包括支撑盘(2; 2a-2h),搅拌器叶片(3; 3a-3h)基本上垂直于支撑盘 2a-2h),所述叶片(3; 3a-3h)基本上沿径向布置。 支撑盘(2; 2a-2h)还设置有接收搅拌器轴的轮毂,搅拌轴优选以合适的方式由马达驱动。 搅拌器(1; 1a-1h)的叶片(3; 3a-3h)的后表面和/或连接到支撑盘(2; 2a-2h)的叶片的区域被设计成大大地防止 涡流脱落。 为此目的,用于搅拌器叶片(3; 3a-3h),支撑盘(2; 2a-2h)和叶片(3; 3a-3h)与支撑盘(2; 2a-2h)。

    Floating zone drawing circuitry for semiconductor rods
    7.
    发明授权
    Floating zone drawing circuitry for semiconductor rods 失效
    半导体棒的浮动区域绘图电路

    公开(公告)号:US4900887A

    公开(公告)日:1990-02-13

    申请号:US322749

    申请日:1989-03-13

    申请人: Wolfgang Keller

    发明人: Wolfgang Keller

    IPC分类号: C30B13/20 H05B6/30

    CPC分类号: H05B6/30 C30B13/20

    摘要: For floating zone drawing of semiconductor rods having diameters greater than 100 mm, at the beginning of the zone drawing process, in particular during melting on of the seed crystal to the semiconductor rod to be drawn, a high load change and impedance change occurs. The power from the high-frequency (HF) generator is no longer coupled thereto optimally. Heating up the feed line to the induction heating coil is the result. This heating is avoided by connecting the HF generator via a feed line to a tank circuit device. A variable tank circuit capacitor connected in parallel and to the series oscillator circuit coil feeding one side of a parallel circuit of a heating circuit capacitor and the induction heating coil. The variable oscillator circuit capacitor is adjusted as a function of the voltage drop across the induction heating coil.

    摘要翻译: 对于具有直径大于100mm的半导体棒的浮动区域拉伸,在区域拉伸处理开始时,特别是在晶种与待拉制的半导体棒的熔融之间,发生高负载变化和阻抗变化。 来自高频(HF)发生器的功率不再与其最佳耦合。 结果,加热到感应加热线圈的馈线。 通过将HF发生器通过馈线连接到储罐回路装置来避免这种加热。 并联连接的可变储能电路电容器和馈送加热电路电容器和感应加热线圈的并联电路的一侧的串联振荡器电路线圈。 可变振荡器电路电容器被调整为感应加热线圈两端的电压降的函数。

    Induction coil in the form of a pancake coil for crucible-free zone
melting
    8.
    发明授权
    Induction coil in the form of a pancake coil for crucible-free zone melting 失效
    用于无坩埚区熔化的煎饼线圈形式的感应线圈

    公开(公告)号:US4538279A

    公开(公告)日:1985-08-27

    申请号:US514166

    申请日:1983-07-15

    申请人: Wolfgang Keller

    发明人: Wolfgang Keller

    CPC分类号: C30B13/20 H05B6/30

    摘要: A pancake induction heating coil for crucible-free zone melting of semiconductor crystal rods, includes a primary winding surrounding a semiconductor rod to be remelted in the form of a ring through which cooling liquid flows, a secondary winding surrounding the primary winding and having a side facing the semiconductor rod, and an energy concentrator lying in the plane of the primary winding and having a circular opening formed substantially in the center thereof for the semiconductor rod, the side of the secondary winding facing the semiconductor rod being electrically conductingly connected to the energy concentrator.

    摘要翻译: 一种用于半导体晶体棒的无坩埚区熔化的煎饼感应加热线圈,包括围绕半导体棒的初级绕组,其以冷却液流过的环形式重熔,围绕初级绕组的次级绕组,并具有侧面 面向半导体棒的能量集中器和位于初级绕组的平面中的能量集中器,并且具有基本上在其中心形成半导体棒的圆形开口,面向半导体棒的次级绕组的侧面与能量导通地连接 集中器

    Method of setting a stable melting zone in a semiconductor crystalline
rod during crucible-free zone melting thereof
    9.
    发明授权
    Method of setting a stable melting zone in a semiconductor crystalline rod during crucible-free zone melting thereof 失效
    在无坩埚区熔化期间设置半导体结晶棒中的稳定熔融区的方法

    公开(公告)号:US4436578A

    公开(公告)日:1984-03-13

    申请号:US231028

    申请日:1981-02-03

    摘要: Method of setting a stable melting zone in a semiconductor crystalline rod during crucible-free zone melting thereof, by means of a single-winding induction heating coil having an inner diameter smaller than the diameter of a portion of the rod being fed to the melting zone which includes performing the crucible-free zone melting in an argon atmosphere at an overpressure in vicinity of at least 1.5 ata and maximally 6 ata, and setting the outer melting-zone height at a value of between 15 and 23 mm for a diameter of the recrystallized rod portion within a range of 30 to 50 mm, at a value of between 18 and 26 mm for a diameter of the recrystallized rod portion within a range of 50 to 75 mm and at a limiting value of 32 mm for a rod diameter greater than 75 mm.

    摘要翻译: 在半导体晶体棒的无坩埚区熔化期间通过单个绕组的感应加热线圈设定稳定的熔融区域的方法,所述单绕组感应加热线圈的内径小于供给到熔融区域的棒的一部分的直径 其包括在氩气氛中在至少1.5ata和最大6ata附近的超压下进行无坩埚区熔化,并将外部熔融区高度设定在15和23mm之间,直径为 再结晶棒部分在30至50mm的范围内,对于直径为50至75mm的再结晶棒部分的直径为18至26mm,杆直径较大的极限值为32mm 超过75毫米。