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    TEMPERATURE UNIFORMITY MEASUREMENTS DURING RAPID THERMAL PROCESSING
    1.
    发明申请
    TEMPERATURE UNIFORMITY MEASUREMENTS DURING RAPID THERMAL PROCESSING 有权
    在快速热处理期间的温度均匀度测量

    公开(公告)号：US20080025368A1

    公开(公告)日：2008-01-31

    申请号：US11830845

    申请日：2007-07-30

    申请人： WOLFGANG ADERHOLD ,  Andreas Hegedus ,  Nir Merry

    发明人： WOLFGANG ADERHOLD ,  Andreas Hegedus ,  Nir Merry

    IPC分类号： G01J5/00

    CPC分类号： G01J5/0022 ,  G01J2005/0081

    摘要： Methods and apparatus for measuring substrate uniformity is provided. The invention includes placing a substrate in a thermal processing chamber, rotating the substrate while the substrate is heated, measuring a temperature of the substrate at a plurality of radial locations as the substrate rotates, correlating each temperature measurement with a location on the substrate, and generating a temperature contour map for the substrate based on the correlated temperature measurements. Numerous other aspects are provided.

    摘要翻译： 提供了测量基板均匀性的方法和装置。 本发明包括将衬底放置在热处理室中，在衬底被加热的同时旋转衬底，在衬底旋转时在多个径向位置测量衬底的温度，使每个温度测量与衬底上的位置相关，以及 基于相关的温度测量产生用于衬底的温度轮廓图。 提供了许多其他方面。

    Temperature uniformity measurements during rapid thermal processing
    4.
    发明授权
    Temperature uniformity measurements during rapid thermal processing 有权
    快速热处理期间的温度均匀性测量

    公开(公告)号：US08104951B2

    公开(公告)日：2012-01-31

    申请号：US11830845

    申请日：2007-07-30

    申请人： Wolfgang Aderhold ,  Andreas G. Hegedus ,  Nir Merry

    发明人： Wolfgang Aderhold ,  Andreas G. Hegedus ,  Nir Merry

    IPC分类号： G01K3/06 ,  G01N25/00 ,  G01J5/00 ,  H01L21/02

    CPC分类号： G01J5/0022 ,  G01J2005/0081

    摘要： Methods and apparatus for measuring substrate uniformity is provided. The invention includes placing a substrate in a thermal processing chamber, rotating the substrate while the substrate is heated, measuring a temperature of the substrate at a plurality of radial locations as the substrate rotates, correlating each temperature measurement with a location on the substrate, and generating a temperature contour map for the substrate based on the correlated temperature measurements. Numerous other aspects are provided.

    摘要翻译： 提供了测量基板均匀性的方法和装置。 本发明包括将衬底放置在热处理室中，在衬底被加热的同时旋转衬底，在衬底旋转时在多个径向位置测量衬底的温度，使每个温度测量与衬底上的位置相关，以及 基于相关的温度测量产生用于衬底的温度轮廓图。 提供了许多其他方面。

    Substrate processing apparatus using a batch processing chamber
    7.
    发明申请
    Substrate processing apparatus using a batch processing chamber 审中-公开
    使用批处理室的基板处理装置

    公开(公告)号：US20060156979A1

    公开(公告)日：2006-07-20

    申请号：US11286063

    申请日：2005-11-22

    申请人： Randhir Thakur ,  Steve Ghanayem ,  Joseph Yudovsky ,  Aaron Webb ,  Adam Brailove ,  Nir Merry ,  Vinay Shah ,  Andreas Hegedus

    发明人： Randhir Thakur ,  Steve Ghanayem ,  Joseph Yudovsky ,  Aaron Webb ,  Adam Brailove ,  Nir Merry ,  Vinay Shah ,  Andreas Hegedus

    IPC分类号： H01L21/322 ,  C23C16/00

    CPC分类号： H01L21/67109 ,  C23C16/4412 ,  C23C16/45546 ,  C23C16/45593 ,  C23C16/4584 ,  C23C16/481 ,  C23C16/54 ,  H01L21/67017 ,  H01L21/67115 ,  H01L21/67167 ,  H01L21/6719 ,  H01L21/67207 ,  H01L21/67745 ,  H01L21/67757 ,  H01L21/67781

    摘要： Aspects of the invention include a method and apparatus for processing a substrate using a multi-chamber processing system (e.g., a cluster tool) adapted to process substrates in one or more batch and/or single substrate processing chambers to increase the system throughput. In one embodiment, a system is configured to perform a substrate processing sequence that contains batch processing chambers only, or batch and single substrate processing chambers, to optimize throughput and minimize processing defects due to exposure to a contaminating environment. In one embodiment, a batch processing chamber is used to increase the system throughput by performing a process recipe step that is disproportionately long compared to other process recipe steps in the substrate processing sequence that are performed on the cluster tool. In another embodiment, two or more batch chambers are used to process multiple substrates using one or more of the disproportionately long processing steps in a processing sequence. Aspects of the invention also include an apparatus and method for delivering a precursor to a processing chamber so that a repeatable ALD or CVD deposition process can be performed.

    摘要翻译： 本发明的方面包括使用适于在一个或多个批次和/或单个基板处理室中处理基板以增加系统吞吐量的多室处理系统（例如，集群工具）来处理基板的方法和装置。 在一个实施例中，系统被配置为执行仅包含批处理室的衬底处理序列，或批处理和单个衬底处理室，以优化生产量并且由于暴露于污染环境而最小化处理缺陷。 在一个实施例中，批处理室用于通过执行与在集群工具上执行的衬底处理序列中的其他工艺配方步骤相比不成比例地长的工艺配方步骤来增加系统吞吐量。 在另一个实施方案中，使用两个或更多个间隔室来处理多个基板，使用处理顺序中的一个或多个不成比例的长处理步骤。 本发明的方面还包括用于将前体输送到处理室的装置和方法，使得可以执行可重复的ALD或CVD沉积工艺。

    Methods and apparatus for processing substrates using model-based control
    8.
    发明授权
    Methods and apparatus for processing substrates using model-based control 有权
    使用基于模型的控制处理基板的方法和装置

    公开(公告)号：US08880210B2

    公开(公告)日：2014-11-04

    申请号：US13183520

    申请日：2011-07-15

    申请人： Keith Brian Porthouse ,  John W. Lane ,  Mariusch Gregor ,  Nir Merry ,  Michael R. Rice ,  Alex Minkovich ,  Hongbin Li ,  Dmitry A. Dzilno

    发明人： Keith Brian Porthouse ,  John W. Lane ,  Mariusch Gregor ,  Nir Merry ,  Michael R. Rice ,  Alex Minkovich ,  Hongbin Li ,  Dmitry A. Dzilno

    IPC分类号： G06F19/00 ,  G05B17/02 ,  H01L21/67 ,  G05D16/20

    CPC分类号： G05D16/2046 ,  G05B17/02 ,  H01L21/67017 ,  H01L21/67253

    摘要： Methods and apparatus are disclosed herein. In some embodiments, methods of controlling process chambers may include predetermining a relationship between pressure in a processing volume and a position of an exhaust valve as a function of a process parameter; setting the process chamber to a first state having a first pressure in the processing volume and a first value of the process parameter, wherein the exhaust valve is set to a first position based on the predetermined relationship to produce the first pressure at the first value; determining a pressure control profile to control the pressure as the process chamber is changed to a second state having a second pressure and a second process parameter value from the first state; and applying the pressure control profile to control the pressure by varying the position of the exhaust valve while changing the process chamber to the second state.

    摘要翻译： 本文公开了方法和装置。 在一些实施例中，控制处理室的方法可以包括根据处理参数预先确定处理容积中的压力与排气门的位置之间的关系; 将所述处理室设定为处理容积中具有第一压力的第一状态和所述处理参数的第一值，其中所述排气阀基于所述预定关系设定在第一位置以产生所述第一值的所述第一压力; 当所述处理室改变为具有来自所述第一状态的第二压力和第二过程参数值的第二状态时，确定压力控制曲线以控制所述压力; 以及通过在将处理室改变到第二状态的同时改变排气门的位置来施加压力控制曲线来控制压力。

    DAMAGE ISOLATION BY SHAPED BEAM DELIVERY IN LASER SCRIBING PROCESS
    9.
    发明申请
    DAMAGE ISOLATION BY SHAPED BEAM DELIVERY IN LASER SCRIBING PROCESS 有权
    通过激光扫描过程中的形状光束传递损坏隔离

    公开(公告)号：US20120322240A1

    公开(公告)日：2012-12-20

    申请号：US13161424

    申请日：2011-06-15

    申请人： James M. HOLDEN ,  Nir Merry ,  Todd Egan

    发明人： James M. HOLDEN ,  Nir Merry ,  Todd Egan

    IPC分类号： H01L21/82 ,  C23F1/08 ,  H01L21/3065

    CPC分类号： B23K26/0635 ,  B23K26/0624 ,  B23K26/364 ,  B23K26/40 ,  B23K2103/172 ,  B23K2103/42 ,  B23K2103/50 ,  H01J37/32889 ,  H01J2237/332 ,  H01J2237/334 ,  H01L21/30655 ,  H01L21/67069 ,  H01L21/67196 ,  H01L21/67207 ,  H01L21/78

    摘要： Methods and apparatuses for dicing substrates by both laser scribing and plasma etching. A method includes laser ablating material layers, the ablating by a laser beam with a centrally peaked spatial power profile to form an ablated trench in the substrate below thin film device layers which is positively sloped. In an embodiment, a femtosecond laser forms a positively sloped ablation profile which facilitates vertically-oriented propagation of microcracks in the substrate at the ablated trench bottom. With minimal lateral runout of microcracks, a subsequent anisotropic plasma etch removes the microcracks for a cleanly singulated chip with good reliability.

    摘要翻译： 通过激光划线和等离子体蚀刻对基板进行切割的方法和装置。 一种方法包括激光烧蚀材料层，用具有中心峰值空间功率分布的激光束进行烧蚀，以在正向倾斜的薄膜器件层下面的衬底中形成消融沟槽。 在一个实施例中，飞秒激光形成正倾斜的消融轮廓，其有利于在烧蚀的沟槽底部处的衬底中的微裂纹的垂直取向传播。 随着微裂纹的侧向跳动最小，随后的各向异性等离子体蚀刻可以清除具有良好可靠性的干净分割芯片的微裂纹。