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    SEMICONDUCTOR MEMORY DEVICE HAVING VARIABLE RESISTANCE MEMORY AND OPERATING METHOD
    1.
    发明申请
    SEMICONDUCTOR MEMORY DEVICE HAVING VARIABLE RESISTANCE MEMORY AND OPERATING METHOD 有权
    具有可变电阻记忆和操作方法的半导体存储器件

    公开(公告)号：US20140043892A1

    公开(公告)日：2014-02-13

    申请号：US13954161

    申请日：2013-07-30

    申请人： WONSEOK LEE ,  SEONGHYUN JEON ,  YOUNGKUG MOON ,  DONG HWI KIM

    发明人： WONSEOK LEE ,  SEONGHYUN JEON ,  YOUNGKUG MOON ,  DONG HWI KIM

    IPC分类号： G11C11/16

    CPC分类号： G11C11/1675 ,  G11C11/16 ,  G11C11/1653 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1695

    摘要： A semiconductor memory device includes a memory cell array of nonvolatile memory cells having a variable resistance element, and a conductor line array capable of generating a compensation magnetic field for the nonvolatile memory cells. A current driver selectively supplies current to conductive lines, a magnetic field sensor senses an applied external magnetic field and generates external magnetic field information, and a controller controls generation of the compensation magnetic field in response to the external magnetic field information.

    摘要翻译： 半导体存储器件包括具有可变电阻元件的非易失性存储单元的存储单元阵列和能够产生用于非易失性存储单元的补偿磁场的导线阵列。 电流驱动器选择性地向导线提供电流，磁场传感器感测施加的外部磁场并产生外部磁场信息，并且控制器响应于外部磁场信息控制补偿磁场的产生。

    STORAGE DEVICE COMPRISING VARIABLE RESISTANCE MEMORY AND RELATED METHOD OF OPERATION
    3.
    发明申请
    STORAGE DEVICE COMPRISING VARIABLE RESISTANCE MEMORY AND RELATED METHOD OF OPERATION 有权
    包含可变电阻记忆体的存储装置及其相关操作方法

    公开(公告)号：US20140032890A1

    公开(公告)日：2014-01-30

    申请号：US13951493

    申请日：2013-07-26

    申请人： WONSEOK LEE ,  SEONGHYUN JEON ,  Dong-Hwi KIM

    发明人： WONSEOK LEE ,  SEONGHYUN JEON ,  Dong-Hwi KIM

    IPC分类号： G06F9/44

    CPC分类号： G06F9/4401 ,  G11C7/20 ,  G11C11/161 ,  G11C11/1653 ,  G11C11/1673 ,  G11C11/1675 ,  G11C13/004 ,  G11C29/028 ,  G11C2029/0407 ,  G11C2029/4402

    摘要： A storage device includes a nonvolatile memory device including a variable resistance memory, and a controller configured to control the nonvolatile memory device. At a booting operation, the controller stores booting information in the variable resistance memory of the nonvolatile memory device. At a rebooting operation, the controller selectively performs a warm boot operation using the booting information stored in the variable resistance memory, based on a comparison result between a booting setting condition associated with the booting operation and a rebooting condition associated with the rebooting operation.

    摘要翻译： 存储装置包括包括可变电阻存储器的非易失性存储器件，以及被配置为控制非易失性存储器件的控制器。 在启动操作时，控制器将引导信息存储在非易失性存储器件的可变电阻存储器中。 在重新启动操作时，控制器基于与引导操作相关联的引导设置条件与与重新启动操作相关联的重新启动条件之间的比较结果，选择性地使用存储在可变电阻存储器中的引导信息进行热启动操作。

    NONVOLATILE MEMORY MODULE, MEMORY SYSTEM INCLUDING NONVOLATILE MEMORY MODULE, AND CONTROLLING METHOD OF NONVOLATILE MEMORY MODULE
    5.
    发明申请
    NONVOLATILE MEMORY MODULE, MEMORY SYSTEM INCLUDING NONVOLATILE MEMORY MODULE, AND CONTROLLING METHOD OF NONVOLATILE MEMORY MODULE 有权
    非易失性存储器模块，包含非易失性存储器模块的存储器系统和非易失性存储器模块的控制方法

    公开(公告)号：US20140071744A1

    公开(公告)日：2014-03-13

    申请号：US13968118

    申请日：2013-08-15

    申请人： WONSEOK LEE ,  YOUNGKUG MOON

    发明人： WONSEOK LEE ,  YOUNGKUG MOON

    IPC分类号： G11C11/16

    CPC分类号： G11C16/28 ,  G06F5/10 ,  G06F12/0246 ,  G06F13/1668 ,  G06F2212/7208 ,  G11C5/04 ,  G11C7/10 ,  G11C7/1003 ,  G11C11/161 ,  G11C11/1653 ,  G11C11/1673 ,  G11C13/003 ,  G11C14/0045

    摘要： A memory system is provided, which includes a nonvolatile memory module including a plurality of nonvolatile memory devices, and a memory module controller configured to control the nonvolatile memory module. At least two nonvolatile memory devices of the plurality of nonvolatile memory devices are configured to store serial presence detect (SPD) information. The memory module controller is configured to read the SPD information from the nonvolatile memory module and to set a communication mode with the nonvolatile memory module based on the read SPD information.

    摘要翻译： 提供一种存储器系统，其包括包括多个非易失性存储器件的非易失性存储器模块以及被配置为控制非易失性存储器模块的存储器模块控制器。 多个非易失性存储器件中的至少两个非易失性存储器件被配置为存储串行存在检测（SPD）信息。 存储器模块控制器被配置为从非易失性存储器模块读取SPD信息，并且基于读取的SPD信息设置与非易失性存储器模块的通信模式。

    NONVOLATILE MEMORY DEVICE HAVING WEAR-LEVELING CONTROL AND METHOD OF OPERATING THE SAME
    6.
    发明申请
    NONVOLATILE MEMORY DEVICE HAVING WEAR-LEVELING CONTROL AND METHOD OF OPERATING THE SAME 有权
    具有耐磨性控制的非易失性存储器件及其操作方法

    公开(公告)号：US20140040535A1

    公开(公告)日：2014-02-06

    申请号：US13954135

    申请日：2013-07-30

    申请人： WONSEOK LEE ,  YOUNGKUG MOON ,  TAEK-SUNG KIM

    发明人： WONSEOK LEE ,  YOUNGKUG MOON ,  TAEK-SUNG KIM

    IPC分类号： G06F12/02

    CPC分类号： G06F12/0246 ,  G06F2212/7211

    摘要： A method is provided for controlling a write operation in a nonvolatile memory device to provide wear leveling, where the nonvolatile memory device includes multiple memory blocks. The method includes reading write indication information with respect to at least a selected memory block of the multiple memory blocks; determining whether a write order of data to be stored in the selected memory block is an ascending order or a descending order, based on the write indication information of the selected memory block; and generating addresses of memory regions in the selected memory block in an ascending order when the write order of the data is determined to be an ascending order, and generating addresses of the memory regions in the selected memory block in a descending order when the write order is determined to be a descending order.

    摘要翻译： 提供了一种用于控制非易失性存储器件中的写入操作以提供损耗均衡的方法，其中非易失性存储器件包括多个存储器块。 所述方法包括：读取至少所述多个存储块的所选存储块的写入指示信息; 基于所选择的存储块的写入指示信息，确定要存储在所选存储器块中的数据的写入顺序是升序还是降序; 以及当所述数据的写入顺序被确定为升序时，以升序生成所选择的存储器块中的存储器区域的地址，并且当所述写入顺序为低时产生所选存储器块中的存储器区域的地址 被确定为降序。