公开(公告)号：US06911689B2

公开(公告)日：2005-06-28

申请号：US10247227

申请日：2002-09-19

申请人： Wei-Yung Hsu ,  Scott Summerfelt ,  Paul McIntyre

发明人： Wei-Yung Hsu ,  Scott Summerfelt ,  Paul McIntyre

IPC分类号： H01L21/02 ,  H01L21/285 ,  H01L27/108 ,  H01L29/76 ,  H01L31/119

CPC分类号： H01L28/75 ,  H01L21/28568

摘要： A versatile system providing Cr-based diffusion barriers and electrode structures utilizing such barriers is disclosed, including a semiconductor substrate (102), a dielectric layer (106) disposed upon the substrate, a Cr-based conductive layer (114) disposed upon the dielectric layer, and an electrode layer (116) disposed upon the conductive layer.

摘要翻译： 公开了一种提供基于Cr的扩散阻挡层和利用这种屏障的电极结构的通用系统，包括半导体衬底（102），设置在衬底上的电介质层（106），设置在电介质上的Cr基导电层 层和布置在导电层上的电极层（116）。

公开(公告)号：US20080078985A1

公开(公告)日：2008-04-03

申请号：US11864426

申请日：2007-09-28

申请人： Rene Meyer ,  Paul McIntyre

发明人： Rene Meyer ,  Paul McIntyre

IPC分类号： H01L47/00

CPC分类号： G11C13/02 ,  G11C2213/11 ,  H01L45/08 ,  H01L45/12 ,  H01L45/142 ,  H01L45/146 ,  H01L45/147

摘要： Non-volatile resistance change memories, systems, arrangements and associated methods are implemented in a variety of embodiments. According to one embodiment, a memory cell having two sections with outwardly-facing portions, the outwardly-facing portions electrically coupled to electrodes is implemented. The memory cell has an ionic barrier between the two sections. The two sections and the ionic barrier facilitate movement of ions from one of the two sections to the other of the two sections in response to a first voltage differential across the outwardly-facing portions. The two sections and the ionic barrier diminish movement of ions from the one of the two sections to the other of the two sections in response to another voltage differential across the outwardly-facing portions.

摘要翻译： 在各种实施例中实现非易失性电阻变化存储器，系统，布置和相关联的方法。 根据一个实施例，实现了具有两个部分的存储单元，其具有朝外的部分，电耦合到电极的朝外的部分被实现。 记忆单元在两个部分之间具有离子屏障。 两个部分和离子屏障促使离子从两个部分中的一个移动到两个部分中的另一个部分，以响应跨越面向外部分的第一电压差。 两个部分和离子屏障响应于穿过面向外部分的另一个电压差，使离子从两个部分中的一个部分移动到两个部分中的另一个部分。

公开(公告)号：US20070170541A1

公开(公告)日：2007-07-26

申请号：US10404876

申请日：2003-03-31

申请人： Chi Chui ,  Krishna Saraswat ,  Baylor Triplett ,  Paul McIntyre

发明人： Chi Chui ,  Krishna Saraswat ,  Baylor Triplett ,  Paul McIntyre

IPC分类号： H01L29/00

CPC分类号： H01L21/28255 ,  H01L29/513 ,  H01L29/517 ,  H01L29/785 ,  H01L29/78642 ,  H01L29/78684 ,  H01L29/78687

摘要： Excellent capacitor-voltage characteristics with near-ideal hysteresis are realized in a capacitive-like structure that uses an electrode substrate-type material with a high-k dielectric layer having a thickness of a few-to-several Angstroms capacitance-based SiO2 equivalent (“TOx,Eq”). According to one particular example embodiment, a semiconductor device structure has an electrode substrate-type material having a Germanium-rich surface material. The electrode substrate-type material is processed to provide this particular electrode surface material in a form that is thermodynamically stable with a high-k dielectric material. A dielectric layer is then formed over the electrode surface material with the high-k dielectric material at a surface that faces, lies against and is thermodynamically stable with the electrode surface material.

摘要翻译： 具有接近理想滞后的良好的电容器电压特性在电容式结构中实现，其使用具有厚度为几至几埃电容的SiO 2等价物（“T Ox”，Eq ）。 根据一个特定示例性实施例，半导体器件结构具有具有富锗表面材料的电极基底型材料。 对电极基板型材料进行加工，以高k电介质材料的热力学稳定形式提供这种特定的电极表面材料。 然后在电极表面材料上形成介电层，其中高k电介质材料在与电极表面材料相对的位置处于表面，并且与电极表面材料具有热力学稳定性。

公开(公告)号：US07271458B2

公开(公告)日：2007-09-18

申请号：US10404876

申请日：2003-03-31

申请人： Chi On Chui ,  Krishna C. Saraswat ,  Baylor B. Triplett ,  Paul McIntyre

发明人： Chi On Chui ,  Krishna C. Saraswat ,  Baylor B. Triplett ,  Paul McIntyre

IPC分类号： H01L29/76

CPC分类号： H01L21/28255 ,  H01L29/513 ,  H01L29/517 ,  H01L29/785 ,  H01L29/78642 ,  H01L29/78684 ,  H01L29/78687

摘要： Excellent capacitor-voltage characteristics with near-ideal hysteresis are realized in a capacitive-like structure that uses an electrode substrate-type material with a high-k dielectric layer having a thickness of a few-to-several Angstroms capacitance-based SiO2 equivalent (“TOx, Eq”). According to one particular example embodiment, a semiconductor device structure has an electrode substrate-type material having a Germanium-rich surface material. The electrode substrate-type material is processed to provide this particular electrode surface material in a form that is thermodynamically stable with a high-k dielectric material. A dielectric layer is then formed over the electrode surface material with the high-k dielectric material at a surface that faces, lies against and is thermodynamically stable with the electrode surface material.

摘要翻译： 具有接近理想滞后的良好的电容器电压特性在电容式结构中实现，其使用具有厚度为几至几埃电容的SiO 2等价物（“T Ox”，Eq ）。 根据一个特定示例性实施例，半导体器件结构具有具有富锗表面材料的电极基底型材料。 对电极基板型材料进行加工，以高k电介质材料的热力学稳定形式提供这种特定的电极表面材料。 然后在电极表面材料上形成介电层，其中高k电介质材料在与电极表面材料相对的位置处于表面，并且与电极表面材料具有热力学稳定性。

公开(公告)号：US20070099398A1

公开(公告)日：2007-05-03

申请号：US11263619

申请日：2005-10-31

申请人： Takuya Sugawara ,  Paul McIntyre

发明人： Takuya Sugawara ,  Paul McIntyre

IPC分类号： H01L21/20 ,  H01L21/36

CPC分类号： H01L21/02247 ,  C23C8/36 ,  H01J37/3222 ,  H01J37/32972 ,  H01L21/02175 ,  H01L21/02252 ,  H01L21/02337 ,  H01L21/02343 ,  H01L21/28255 ,  H01L21/31111 ,  H01L21/318

摘要： A method and system for forming a nitrided germanium-containing layer by plasma processing. The method includes providing a germanium-containing substrate in a process chamber, generating a plasma from a process gas containing N2 and a noble gas, where the plasma conditions are selected effective to form plasma excited N2 species while controlling formation of plasma excited N species, and exposing the substrate to the plasma to form a nitrided germanium-containing layer on the substrate. A method is also provided that includes exposing a germanium-containing dielectric layer to liquid or gaseous H2O to alter the thickness and chemical composition of the layer.

摘要翻译： 通过等离子体处理形成氮化锗含量层的方法和系统。 该方法包括在处理室中提供含锗衬底，从含有N 2 O 3和惰性气体的工艺气体产生等离子体，其中选择有效的等离子体条件以形成等离子体激发的N _{2种物质，同时控制等离子体激发的N物质的形成，以及将衬底暴露于等离子体以在衬底上形成氮化的含锗层。 还提供了一种方法，其包括将含锗介电层暴露于液态或气态H 2 O以改变该层的厚度和化学组成。}

公开(公告)号：US06211034B1

公开(公告)日：2001-04-03

申请号：US09059546

申请日：1998-04-13

申请人： Mark R. Visokay ,  Luigi Colombo ,  Paul McIntyre ,  Scott R. Summerfelt

发明人： Mark R. Visokay ,  Luigi Colombo ,  Paul McIntyre ,  Scott R. Summerfelt

IPC分类号： H01L218242

CPC分类号： H01L28/60 ,  H01L21/32139 ,  H01L27/1085

摘要： An adherent hardmask structure and method of etching a bottom electrode in memory device capacitor structures that dispenses with the need for any adhesion promoter during the etching of the bottom electrode. By using silicon nitride as a hardmask 220, the processing is simplified and a more robust capacitor structure can be produced. Silicon nitride 220 has been shown to yield significantly enhanced adhesion to platinum 210, as compared to silicon oxide formed by any method. Since silicon nitride 220 is oxidation resistant, it advantageously resists any oxygen plasma that might be used in the etch chemistry. This etching process can be used during processing of high-k capacitor structures in DRAMs in the ≧256 Mbit generations.

摘要翻译： 一种粘附硬掩模结构和蚀刻存储器件电容器结构中的底部电极的方法，其在底部电极的蚀刻期间省去了对任何粘附促进剂的需要。 通过使用氮化硅作为硬掩模220，简化了处理，并且可以产生更坚固的电容器结构。 与通过任何方法形成的氧化硅相比，已经显示氮化硅220产生显着增强的与铂210的粘合性。 由于氮化硅220是抗氧化的，所以它有利地抵抗可能在蚀刻化学中使用的任何氧等离子体。 这种蚀刻工艺可以在> = 256Mbit的DRAM中的高k电容器结构的处理期间使用。

公开(公告)号：US5972722A

公开(公告)日：1999-10-26

申请号：US60152

申请日：1998-04-14

申请人： Mark R. Visokay ,  Luigi Colombo ,  Paul McIntyre ,  Scott R. Summerfelt

发明人： Mark R. Visokay ,  Luigi Colombo ,  Paul McIntyre ,  Scott R. Summerfelt

IPC分类号： H01L21/02 ,  H01L21/311 ,  H01L21/8242 ,  H01G7/06

CPC分类号： H01L27/1085 ,  H01L21/31116 ,  H01L28/55 ,  H01L28/60

摘要： A high-k dielectric capacitor structure and fabrication method that incorporates an adhesion promoting etch stop layer 200 to promote adhesion of the bottom electrode 220 to the interlevel dielectric layer 210 and to provide a well controlled, repeatable and uniform recess prior to the dielectric 230 deposition. By using a sacrificial layer 200, for example silicon nitride (Si3N4), this layer can act as an etch stop during the recess etch to eliminate parasitic capacitance between adjacent capacitor cells A and B and can promote adhesion of the bottom electrode material 220 to the substrate 210.

摘要翻译： 高k电介质电容器结构和制造方法，其包含粘附促进蚀刻停止层200以促进底部电极220粘附到层间电介质层210，并且在电介质230沉积之前提供良好控制的，可重复的和均匀的凹部 。 通过使用牺牲层200（例如氮化硅（Si 3 N 4）），该层可以在凹陷蚀刻期间用作蚀刻停止以消除相邻的电容器电池A和B之间的寄生电容，并且可以促进底部电极材料220与 衬底210。

公开(公告)号：US20070226945A1

公开(公告)日：2007-10-04

申请号：US11726465

申请日：2007-03-21

申请人： Paul McIntyre

发明人： Paul McIntyre

IPC分类号： A47L9/00

CPC分类号： A47L5/365 ,  A47L9/009 ,  A47L9/1418 ,  E04D13/0765 ,  Y10S55/03

摘要： In various exemplary embodiments, the present invention provides a lightweight, maneuverable, thin-walled, transparent apparatus for use with a heavy-duty vacuum system for quickly and easily collecting and storing large volumes of bulky debris, thereby reducing the time needed for cleanup. The present invention also provides an improved vacuum manifold assembly that may be used in conjunction with various gas and electric blower/vacuum motors, both novel and conventional. The present invention further provides various gutter cleaning and other tools that may be used in conjunction with such a vacuum system. The gutter cleaning vacuum system including the improved hinged vacuum manifold assembly of the present invention has sufficient power and is designed such that the various gutter cleaning and other tools are effective, suction-wise, at great distances from the unit, such that an operator may use the gutter cleaning and other tools at great distances over his/her head, for example.

摘要翻译： 在各种示例性实施例中，本发明提供了一种与重型真空系统一起使用的轻质的，可操作的薄壁透明装置，用于快速且容易地收集和存储大量的大块碎屑，从而减少了清理所需的时间。 本发明还提供了一种改进的真空歧管组件，其可以与新颖的和常规的各种气体和电动鼓风机/真空马达结合使用。 本发明还提供了可以与这种真空系统结合使用的各种沟槽清洁和其它工具。 包括本发明的改进的铰接式真空歧管组件的沟槽清洁真空系统具有足够的功率，并且被设计成使得各种沟槽清洁和其它工具在抽吸方面距离单元很远的距离是有效的，使得操作者可以 例如，在他/她的头上使用沟槽清洁和其他工具在很远的距离。

公开(公告)号：US20070099435A1

公开(公告)日：2007-05-03

申请号：US11263402

申请日：2005-10-31

申请人： Takuya Sugawara ,  Paul McIntyre

发明人： Takuya Sugawara ,  Paul McIntyre

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/02247 ,  C23C8/02 ,  C23C8/36 ,  H01J2237/3387 ,  H01L21/02252 ,  H01L21/02337 ,  H01L21/02343 ,  H01L21/28202 ,  H01L21/28255 ,  H01L21/3143 ,  H01L21/318

摘要： A method and system for forming a nitrided germanium-containing layer by plasma processing. The method includes providing a germanium-containing substrate in a process chamber, generating a plasma from a process gas containing N2 and a noble gas, where the plasma conditions are selected effective to form plasma excited N2 species while controlling formation of plasma excited N species, and exposing the substrate to the plasma to form a nitrided germanium-containing layer on the substrate. A method is also provided that includes exposing a germanium-containing dielectric layer to liquid or gaseous H2O to alter the thickness and chemical composition of the layer.

公开(公告)号：US06897105B1

公开(公告)日：2005-05-24

申请号：US09396642

申请日：1999-09-15

申请人： Glen D. Wilk ,  Robert M. Wallace ,  John M. Anthony ,  Paul McIntyre

发明人： Glen D. Wilk ,  Robert M. Wallace ,  John M. Anthony ,  Paul McIntyre

IPC分类号： H01L21/02 ,  H01L21/44 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/115

CPC分类号： H01L27/11502 ,  H01L27/1085 ,  H01L27/11507 ,  H01L28/60 ,  Y10S438/957

摘要： An embodiment of the instant invention is a method of forming a electrically conductive structure insulatively disposed from a second structure, the method comprising: providing the second structure; forming the electrically conductive structure of a material (step 118 of FIG. 1) that remains substantially conductive after it is oxidized; forming an electrically insulative layer (step 116 of FIG. 1) between the second structure and the conductive structure; and oxidizing the conductive structure by subjecting it to an ozone containing atmosphere for a duration of time and at a first temperature.

摘要翻译： 本发明的一个实施例是形成从第二结构绝对地设置的导电结构的方法，所述方法包括：提供所述第二结构; 形成材料的导电结构（图1的步骤118），其在氧化之后保持基本导电; 在第二结构和导电结构之间形成电绝缘层（图1的步骤116）; 以及通过使其在含臭氧的气氛中持续一段时间并处于第一温度来氧化所述导电结构。