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139 条记录 (耗时 0.035 秒)

    Semiconductor package and fabrication method thereof
    1.
    发明授权
    Semiconductor package and fabrication method thereof 有权
    半导体封装及其制造方法

    公开(公告)号：US08698326B2

    公开(公告)日：2014-04-15

    申请号：US11900345

    申请日：2007-09-10

    申请人： Wen-Home Huang ,  Wen-Tsung Tseng ,  Chang-Fu Lin ,  Ho-Yi Tsai ,  Cheng-Hsu Hsiao

    发明人： Wen-Home Huang ,  Wen-Tsung Tseng ,  Chang-Fu Lin ,  Ho-Yi Tsai ,  Cheng-Hsu Hsiao

    IPC分类号： H01L23/28 ,  H01L23/48

    CPC分类号： H01L21/561 ,  H01L23/3128 ,  H01L23/3142 ,  H01L29/0657 ,  H01L2224/0554 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/16225 ,  H01L2924/00014 ,  H01L2924/10158 ,  H01L2924/15311 ,  H01L2924/3011 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

    摘要： A semiconductor package and a fabrication method thereof are disclosed. The fabrication method includes the steps of providing a semiconductor chip having an active surface and a non-active surface opposing to the active surface, roughening a peripheral portion of the non-active surface so as to divide the non-active surface into the peripheral portion formed with a roughened structure and a non-roughened central portion, mounting the semiconductor chip on a chip carrier via a plurality of solder bumps formed on the active surface, forming an encapsulant on the chip carrier to encapsulate the semiconductor chip. The roughened structure formed on the peripheral portion of the non-active surface of the semiconductor chip can reinforce the bonding between the semiconductor chip and the encapsulant, and the non-roughened central portion of the non-active surface of the semiconductor chip can maintain the structural strength of the semiconductor chip.

    摘要翻译： 公开了半导体封装及其制造方法。 该制造方法包括以下步骤：提供具有与活性表面相对的活性表面和非活性表面的半导体芯片，粗糙化非活性表面的周边部分，以将非活性表面划分成周边部分 形成有粗糙结构和非粗糙化的中心部分，通过形成在有源表面上的多个焊料凸块将半导体芯片安装在芯片载体上，在芯片载体上形成密封剂以封装半导体芯片。 形成在半导体芯片的非活性表面的周边部分上的粗糙结构可以加强半导体芯片和密封剂之间的接合，并且半导体芯片的非活性表面的非粗糙化的中心部分可以保持 半导体芯片的结构强度。

    Semiconductor package and fabrication method thereof
    2.
    发明申请
    Semiconductor package and fabrication method thereof 有权
    半导体封装及其制造方法

    公开(公告)号：US20080061451A1

    公开(公告)日：2008-03-13

    申请号：US11900345

    申请日：2007-09-10

    申请人： Wen-Home Huang ,  Wen-Tsung Tseng ,  Chang-Fu Lin ,  Ho-Yi Tsai ,  Cheng-Hsu Hsiao

    发明人： Wen-Home Huang ,  Wen-Tsung Tseng ,  Chang-Fu Lin ,  Ho-Yi Tsai ,  Cheng-Hsu Hsiao

    IPC分类号： H01L23/495 ,  H01L21/00

    CPC分类号： H01L21/561 ,  H01L23/3128 ,  H01L23/3142 ,  H01L29/0657 ,  H01L2224/0554 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/16225 ,  H01L2924/00014 ,  H01L2924/10158 ,  H01L2924/15311 ,  H01L2924/3011 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

    摘要： A semiconductor package and a fabrication method thereof are disclosed. The fabrication method includes the steps of providing a semiconductor chip having an active surface and a non-active surface opposing to the active surface, roughening a peripheral portion of the non-active surface so as to divide the non-active surface into the peripheral portion formed with a roughened structure and a non-roughened central portion, mounting the semiconductor chip on a chip carrier via a plurality of solder bumps formed on the active surface, forming an encapsulant on the chip carrier to encapsulate the semiconductor chip. The roughened structure formed on the peripheral portion of the non-active surface of the semiconductor chip can reinforce the bonding between the semiconductor chip and the encapsulant, and the non-roughened central portion of the non-active surface of the semiconductor chip can maintain the structural strength of the semiconductor chip.

    摘要翻译： 公开了半导体封装及其制造方法。 该制造方法包括以下步骤：提供具有与活性表面相对的活性表面和非活性表面的半导体芯片，粗糙化非活性表面的周边部分，以将非活性表面划分成周边部分 形成有粗糙结构和非粗糙化的中心部分，通过形成在有源表面上的多个焊料凸块将半导体芯片安装在芯片载体上，在芯片载体上形成密封剂以封装半导体芯片。 形成在半导体芯片的非活性表面的周边部分上的粗糙结构可以加强半导体芯片和密封剂之间的接合，并且半导体芯片的非活性表面的非粗糙化的中心部分可以保持 半导体芯片的结构强度。

    Heat dissipating semiconductor package and fabrication method therefor
    3.
    发明申请
    Heat dissipating semiconductor package and fabrication method therefor 审中-公开
    散热半导体封装及其制造方法

    公开(公告)号：US20080122070A1

    公开(公告)日：2008-05-29

    申请号：US11986359

    申请日：2007-11-21

    申请人： Wen-Tsung Tseng ,  Ho-Yi Tsai ,  Chien-Ping Huang ,  Chih-Wei Chang ,  Cheng-Hsu Hsiao

    发明人： Wen-Tsung Tseng ,  Ho-Yi Tsai ,  Chien-Ping Huang ,  Chih-Wei Chang ,  Cheng-Hsu Hsiao

    IPC分类号： H01L23/373 ,  H01L21/58

    CPC分类号： H01L23/3128 ,  H01L21/568 ,  H01L23/4334 ,  H01L24/16 ,  H01L2224/16 ,  H01L2224/73253 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/01079 ,  H01L2924/16152 ,  H01L2224/0401

    摘要： A heat dissipating semiconductor package and a fabrication method therefor are provided. The fabrication method for the heat dissipating semiconductor package mainly includes steps of: containing a substrate having a chip mounted thereon in an aperture of a carrier; mounting a heat dissipating sheet having supporting portions on the carrier with the heat dissipating sheet being attached on the chip; forming an encapsulant to encapsulate the semiconductor chip and the heat dissipating structure; removing a part of the encapsulant above the heat dissipating sheet with a part of the heat dissipating sheet exposed from the encapsulant by lapping; and forming a cover layer on the part of heat dissipating sheet to prevent it from oxidation; and cutting along a predetermined size of the semiconductor package, thereby heat generated from an operation of the chip is dissipated via the heat dissipating structure.

    摘要翻译： 提供一种散热半导体封装及其制造方法。 用于散热半导体封装的制造方法主要包括以下步骤：将载置有孔的芯片安装在其上; 将散热板安装在载体上，并将散热板安装在芯片上; 形成密封剂以封装半导体芯片和散热结构; 通过研磨从所述密封剂暴露出的部分所述散热片去除所述散热片上方的所述密封剂的一部分; 在散热片的一部分上形成覆盖层以防止其氧化; 并且沿着预定尺寸的半导体封装进行切割，由此从芯片的操作产生的热量经由散热结构消散。

    Heat dissipating semiconductor package and fabrication method therefor
    5.
    发明申请
    Heat dissipating semiconductor package and fabrication method therefor 审中-公开
    散热半导体封装及其制造方法

    公开(公告)号：US20080122071A1

    公开(公告)日：2008-05-29

    申请号：US11986362

    申请日：2007-11-21

    申请人： Wen-Tsung Tseng ,  Ho-Yi Tsai ,  Chien-Ping Huang ,  Chih-Wei Chang ,  Cheng-Hsu Hsiao

    发明人： Wen-Tsung Tseng ,  Ho-Yi Tsai ,  Chien-Ping Huang ,  Chih-Wei Chang ,  Cheng-Hsu Hsiao

    IPC分类号： H01L23/373

    CPC分类号： H01L23/3128 ,  H01L21/568 ,  H01L23/4334 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/32245 ,  H01L2224/73253 ,  H01L2924/15311

    摘要： A heat dissipating semiconductor package and the fabrication method therefor are provided. The fabrication method for the heat dissipating semiconductor package mainly includes steps of: containing a substrate having a chip mounted thereon in an aperture of a carrier, wherein the carrier has an electroconductive layer; allowing a heat dissipating structure having supporting portions to be mounted on and electrically connected to the electroconductive layer of the carrier via the supporting portions thereof while heat dissipating structure being mounted on the chip; after an encapsulation process and removing a part of the encapsulant above the heat dissipating sheet by lapping to expose a surface of the heat dissipating structure from the encapsulant, depositing and forming a metal passivation layer on the surface of the heat dissipating structure by electroplating for preventing the heat dissipating structure from oxidizing.

    摘要翻译： 提供一种散热半导体封装及其制造方法。 用于散热半导体封装的制造方法主要包括以下步骤：在载体的孔中容纳其上安装有芯片的基板，其中载体具有导电层; 允许散热结构，其具有支撑部分，其安装在载体的导电层上并通过其支撑部分电连接，同时散热结构安装在芯片上; 在封装工艺之后并且通过研磨去除散热片上方的一部分密封剂，以从密封剂暴露出散热结构的表面，在散热结构的表面上沉积和形成金属钝化层，通过电镀防止 散热结构从氧化。

    METHOD FOR MANUFACTURING HEAT-DISSIPATING SEMICONDUCTOR PACKAGE STRUCTURE
    9.
    发明申请
    METHOD FOR MANUFACTURING HEAT-DISSIPATING SEMICONDUCTOR PACKAGE STRUCTURE 审中-公开
    制造散热半导体封装结构的方法

    公开(公告)号：US20110287588A1

    公开(公告)日：2011-11-24

    申请号：US13195639

    申请日：2011-08-01

    申请人： Wen-Tsung Tseng ,  Ho-Yi Tsai ,  Chien-Ping Huang ,  Cheng-Hsu Hsiao

    发明人： Wen-Tsung Tseng ,  Ho-Yi Tsai ,  Chien-Ping Huang ,  Cheng-Hsu Hsiao

    IPC分类号： H01L21/56

    CPC分类号： H01L23/4334 ,  H01L21/565 ,  H01L23/3128 ,  H01L23/552 ,  H01L24/48 ,  H01L25/03 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/3025 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

    摘要： A heat-dissipating semiconductor package structure and a method for manufacturing the same is disclosed. The method includes: disposing on and electrically connecting to a chip carrier at least a semiconductor chip and a package unit; disposing on the top surface of the package unit a heat-dissipating element having a flat portion and a supporting portion via the flat portion; receiving the package unit and semiconductor chip in a receiving space formed by the flat portion and supporting portion of the heat-dissipating element; and forming on the chip carrier encapsulant for encapsulating the package unit, semiconductor chip, and heat-dissipating element. The heat-dissipating element dissipates heat generated by the package unit, provides EMI shielding, prevents delamination between the package unit and the encapsulant, decreases thermal resistance, and prevents cracking.

    摘要翻译： 公开了一种散热半导体封装结构及其制造方法。 该方法包括：在至少半导体芯片和封装单元上布置并电连接到芯片载体; 在所述封装单元的顶表面上设置有经由所述平坦部分具有平坦部分和支撑部分的散热元件; 在由散热元件的平坦部分和支撑部分形成的接收空间中接收封装单元和半导体芯片; 以及在芯片载体密封剂上形成以封装封装单元，半导体芯片和散热元件。 散热元件消散封装单元产生的热量，提供EMI屏蔽，防止封装单元与密封剂之间的分层，降低热阻，防止开裂。

    Method for fabricating semiconductor device and carrier applied therein
    10.
    发明申请
    Method for fabricating semiconductor device and carrier applied therein 审中-公开
    制造应用于其中的半导体器件和载体的方法

    公开(公告)号：US20080213942A1

    公开(公告)日：2008-09-04

    申请号：US12074321

    申请日：2008-03-03

    申请人： Min-Shun Hung ,  Ho-Yi Tsai ,  Chien-Ping Huang ,  Wen-Tsung Tseng ,  Cheng-Hsu Hsiao

    发明人： Min-Shun Hung ,  Ho-Yi Tsai ,  Chien-Ping Huang ,  Wen-Tsung Tseng ,  Cheng-Hsu Hsiao

    IPC分类号： H01L23/12 ,  H05K7/00

    CPC分类号： H01L23/3128 ,  H01L21/563 ,  H01L21/568 ,  H01L21/6835 ,  H01L24/16 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2224/73203 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2224/0401

    摘要： This invention provides a method for fabricating a semiconductor device and a carrier applied therein. The method includes the steps of: disposing a chip-mounted substrate in an opening of a carrier; forming at least a storage aperture and at least an inspection aperture in the carrier; infusing an adhesive into the storage aperture to fill a gap between the substrate and carrier with the adhesive by capillarity; determining whether the inspection aperture is filled with the adhesive to ascertain whether the gap is completely filled with the adhesive; in response to a positive result, performing a molding process to form a molding compound for encapsulating the chip; and performing implantation of solder ball and a singulation process to form a semiconductor device with desirable dimensions. The inspection aperture is inspected with a naked eye to determine whether the gap is completely filled with the adhesive, thereby reducing inspection costs and increasing yields of products with no additional packaging costs.

    摘要翻译： 本发明提供一种用于制造应用于其中的半导体器件和载体的方法。 该方法包括以下步骤：将芯片安装的基板设置在载体的开口中; 在所述载体中至少形成存储孔径和至少一个检查孔; 将粘合剂注入到存储孔中，以通过毛细管力用粘合剂填充基底和载体之间的间隙; 确定检查孔是否填充有粘合剂以确定间隙是否完全被粘合剂填充; 响应于积极的结果，进行成型处理以形成用于封装芯片的模塑料; 并且执行焊球的注入和单一化处理以形成具有所需尺寸的半导体器件。 检查孔径用肉眼检查以确定间隙是否完全充满粘合剂，从而降低检查成本并提高产品的产量，而不需要额外的包装成本。