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    Wafer edge deposition elimination
    2.
    发明授权
    Wafer edge deposition elimination 失效
    晶圆边缘沉积消除

    公开(公告)号：US06231674B1

    公开(公告)日：2001-05-15

    申请号：US09481124

    申请日：2000-01-11

    申请人： Aihua Chen ,  Karl A. Littau ,  Dashun S. Zhou

    发明人： Aihua Chen ,  Karl A. Littau ,  Dashun S. Zhou

    IPC分类号： C23C1600

    CPC分类号： C23C16/458 ,  C23C16/45521 ,  C23C16/4583 ,  C23C16/4585 ,  C23C16/46 ,  Y10S156/916

    摘要： This invention provides a method and apparatus for substantially eliminating deposition on the edge of a wafer supported on a pedestal in a processing chamber. Process gas flow onto the wafer surface is inhibited from reaching the wafer edge and backside, by means of a shadow ring placed over the wafer without touching it. Deposition on the edge and backside of the wafer are therefore substantially eliminated. The shadow ring defines a cavity which circumscribes the wafer edge, into which purge gas is flowed. This purge gas flows out from the cavity through the gap between the shadow ring and the upper surface of the wafer. Alignment pins are placed on the wafer supporting surface of the pedestal. These pins have sloping surfaces and are arranged to guide the wafer to a centered position on the pedestal when the wafer is placed on the pedestal. These pins also serve to align the shadow ring to the pedestal and thence to the wafer. The shadow ring has a plurality of keyed formations which mate to the pins, and as the shadow ring and pedestal are brought together, the pins serve to align the shadow ring. This precise rotational alignment and centering of the shadow ring results in substantial elimination of edge deposition. The keyed formations have elliptical cross-sections to provide for radial movement of the pins with respect to the keyed formations due to thermal expansion.

    摘要翻译： 本发明提供一种用于基本上消除在处理室中的基座上支撑的晶片的边缘上的沉积的方法和装置。 通过放置在晶片上的阴影环而不接触晶片表面的工艺气体流被抑制到达晶片边缘和背面。 因此，基本上消除了在晶片的边缘和背面上的沉积。 阴影环限定了围绕晶片边缘的空腔，吹扫气体流入该空腔。 该清洗气体通过阴影环和晶片的上表面之间的间隙从腔体流出。 对准销被放置在基座的晶片支撑表面上。 这些销具有倾斜表面并且被布置成当晶片被放置在基座上时将晶片引导到基座上的居中位置。 这些引脚还用于将阴影环对准基座，从而将其对准晶片。 阴影环具有与销相配合的多个键状结构，并且当阴影环和基座被聚集在一起时，销用于对准阴影环。 阴影环的这种精确的旋转对准和定心导致边缘沉积的显着消除。 键合结构具有椭圆形横截面，以提供由于热膨胀而使销相对于键合地层的径向移动。

    Methods and apparatus for minimizing excess aluminum accumulation in CVD chambers
    3.
    发明授权
    Methods and apparatus for minimizing excess aluminum accumulation in CVD chambers 失效
    用于最小化CVD室中过多的铝积聚的方法和装置

    公开(公告)号：US5858464A

    公开(公告)日：1999-01-12

    申请号：US791131

    申请日：1997-02-13

    申请人： Karl Littau ,  Dashun S. Zhou ,  Alfred Mak ,  Ling Chen

    发明人： Karl Littau ,  Dashun S. Zhou ,  Alfred Mak ,  Ling Chen

    IPC分类号： C23C16/20 ,  C23C16/44 ,  H01L21/28 ,  H01L21/285 ,  H01L21/3205 ,  H01L23/52

    CPC分类号： H01L21/28556 ,  C23C16/4401 ,  C23C16/4404

    摘要： A method and apparatus for minimizing excess aluminum deposition that can build up inside a substrate processing chamber during an aluminum CVD substrate processing operation. The method of the present invention periodically introduces nitrogen into the processing chamber after aluminum CVD processing of at least a single wafer in order to minimize unwanted aluminum accumulation in various parts of the chamber. According to one embodiment, the present invention provides a method of minimizing excess metal deposition inside a substrate processing chamber after a substrate processing operation. The method includes the steps of introducing a nitrogen-containing passivating gas into a chamber after the substrate processing operation, and maintaining at least a portion of the chamber at a second temperature during the introducing step thereby reducing excess metal build up within the chamber. In preferred embodiments, the method is performed after removal of the substrate from the processing chamber. In other preferred embodiments, the second temperature ranges from about 200.degree.-300.degree. C.

    摘要翻译： 一种用于最小化在铝CVD衬底处理操作期间可以在衬底处理室内形成的多余铝沉积的方法和装置。 本发明的方法在对至少一个晶片进行铝CVD处理之后，将氮气周期性地引入处理室中，以便最小化腔室各部分中不希望的铝积聚。 根据一个实施例，本发明提供一种在衬底处理操作之后使衬底处理室内的多余金属沉积最小化的方法。 该方法包括以下步骤：在基板处理操作之后将含氮钝化气体引入室中，并且在引入步骤期间将室的至少一部分保持在第二温度，从而减少室内过量的金属积聚。 在优选的实施方案中，在从处理室中除去基材之后进行该方法。 在其它优选实施方案中，第二温度范围为约200-300℃

    Optical beam splitter
    4.
    发明授权
    Optical beam splitter 失效
    光束分离器

    公开(公告)号：US07742666B2

    公开(公告)日：2010-06-22

    申请号：US12197689

    申请日：2008-08-25

    申请人： Michael G. Lee ,  Alexei L. Glebov ,  Dashun S. Zhou

    发明人： Michael G. Lee ,  Alexei L. Glebov ,  Dashun S. Zhou

    IPC分类号： G02B6/26

    CPC分类号： G02B6/125

    摘要： An optical beam splitter includes an input waveguide, two or more branching arms, two or more fan-out arms, and two or more output waveguides. The input waveguide receives an input light beam. The two or more branching arms are coupled to the input waveguide at a separation point and split the input light beam at the separation point into two or more light beams. Each fan-out arm is coupled to one of the branching arms and fans-out one of the two or more light beams to a predetermined output pitch. Each output waveguide is coupled to one of the fan-out arms and transmits one of the two or more light beams out of the optical beam splitter.

    摘要翻译： 光束分离器包括输入波导，两个或多个分支臂，两个或多个扇出臂以及两个或更多个输出波导。 输入波导接收输入光束。 两个或更多个分支臂在分离点处耦合到输入波导，并将分离点处的输入光束分成两个或更多个光束。 每个扇出臂耦合到分支臂中的一个并将两个或更多个光束中的一个扇出，以预定的输出间距。 每个输出波导耦合到扇出臂中的一个，并将两个或更多个光束中的一个发射出光束分离器。

    Wafer edge deposition elimination
    5.
    发明授权
    Wafer edge deposition elimination 失效
    晶圆边缘沉积消除

    公开(公告)号：US6033480A

    公开(公告)日：2000-03-07

    申请号：US729210

    申请日：1996-10-15

    申请人： Aihua Chen ,  Karl A. Littau ,  Dashun S. Zhou

    发明人： Aihua Chen ,  Karl A. Littau ,  Dashun S. Zhou

    IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C23C16/00

    CPC分类号： C23C16/458 ,  C23C16/45521 ,  C23C16/4583 ,  C23C16/4585 ,  C23C16/46 ,  Y10S156/916

    摘要： This invention provides a method and apparatus for substantially eliminating deposition on the edge of a wafer supported on a pedestal in a processing chamber. Process gas flow onto the wafer surface is inhibited from reaching the wafer edge and backside, by means of a shadow ring placed over the wafer without touching it. Deposition on the edge and backside of the wafer are therefore substantially eliminated. The shadow ring defines a cavity which circumscribes the wafer edge, into which purge gas is flowed. This purge gas flows out from the cavity through the gap between the shadow ring and the upper surface of the wafer. Alignment pins are placed on the wafer supporting surface of the pedestal. These pins have sloping surfaces and are arranged to guide the wafer to a centered position on the pedestal when the wafer is placed on the pedestal. These pins also serve to align the shadow ring to the pedestal and thence to the wafer. The shadow ring has a plurality of keyed formations which mate to the pins, and as the shadow ring and pedestal are brought together, the pins serve to align the shadow ring. This precise rotational alignment and centering of the shadow ring results in substantial elimination of edge deposition. The keyed formations have elliptical cross-sections to provide for radial movement of the pins with respect to the keyed formations due to thermal expansion.

    摘要翻译： 本发明提供一种用于基本上消除在处理室中的基座上支撑的晶片的边缘上的沉积的方法和装置。 通过放置在晶片上的阴影环而不接触晶片表面的工艺气体流被抑制到达晶片边缘和背面。 因此，基本上消除了在晶片的边缘和背面上的沉积。 阴影环限定了围绕晶片边缘的空腔，吹扫气体流入该空腔。 该清洗气体通过阴影环和晶片的上表面之间的间隙从腔体流出。 对准销被放置在基座的晶片支撑表面上。 这些销具有倾斜表面并且被布置成当晶片被放置在基座上时将晶片引导到基座上的居中位置。 这些引脚还用于将阴影环对准基座，从而将其对准晶片。 阴影环具有与销相配合的多个键状结构，并且当阴影环和基座被聚集在一起时，销用于对准阴影环。 阴影环的这种精确的旋转对准和定心导致边缘沉积的显着消除。 键合结构具有椭圆形横截面，以提供由于热膨胀而使销相对于键合地层的径向移动。